AU2016238924B2 - Light-emitting device, integrated light-emitting device, and light-emitting module - Google Patents
Light-emitting device, integrated light-emitting device, and light-emitting module Download PDFInfo
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- AU2016238924B2 AU2016238924B2 AU2016238924A AU2016238924A AU2016238924B2 AU 2016238924 B2 AU2016238924 B2 AU 2016238924B2 AU 2016238924 A AU2016238924 A AU 2016238924A AU 2016238924 A AU2016238924 A AU 2016238924A AU 2016238924 B2 AU2016238924 B2 AU 2016238924B2
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Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Planar Illumination Modules (AREA)
Abstract
A light-emitting device includes a base including a
conductive wiring; a light-emitting element mounted on the base
and configured to emit light; a light reflective film provided
on an upper surface of the light-emitting element; and a
encapsulant covering the light-emitting element and the light
reflective film. A ratio (H/W) of a height (H) of the
encapsulant to a width (W) of a bottom surface of the encapsulant
is less than 0.5.
Fig.1
100
102 - - - --108 - - r
101 105
1 4H
103
W
Fig.2
100
- 80
S60
Co
E 40
20
0
-90 -60 -30 0 30 60 90
Incident angle (deg.)
Description
Fig.1 100 102 -- - - - 108 - - r
101 105 1 4H
103 W
Fig.2 100
- 80
S60
Co E 40
20
0 -90 -60 -30 0 30 60 90 Incident angle (deg.)
[0001] This application claims priority to Japanese
Patent Application No. 2015-200445, filed on October 8, 2015,
and Japanese Patent Application No. 2016-197968, filed on
October 6, 2016, the disclosures of which are hereby
incorporated by reference in their entirety.
[0002] The present disclosure relates to light-emitting
devices, integrated light-emitting devices, and
light-emitting modules.
[0003] In recent years, various electronic components
have been proposed and put into practical use, and they are
required to exhibit higher performance. In particular, some
electronic components need to maintain their performance for
a long period of time under a harsh usage environment. Such
requirements can apply to light-emitting devices using
semiconductor light-emitting elements, including a
light-emitting diode (i.e., LED). That is, in the fields of
general illumination and interior and exterior lighting for
vehicles, the light-emitting devices have been increasingly
required day by day to demonstrate higher performance, specifically, higher output (i.e., higher luminance) and higher reliability. Furthermore, the light-emitting devices are requested to be supplied at low costs while maintaining high performance.
Backlights used in liquid crystal televisions, general
lighting devices, and the like are developed by focusing on
their designs, which leads to a high demand for thinning.
[0004] For example, Japanese Unexamined Patent
Application Publication No. 2008-4948 discloses a
light-emitting device in which a reflector is provided on the
upper surface of a light-emitting element mounted on a submount
in a flip-chip manner to thereby achieve thinning of the
backlight.[
[0005] Japanese Unexamined Patent Application
PublicationNo.2008-4948 canachieve the light-emittingdevice
with wide light distribution. However, with further thinning
of the backlight, a light-emitting device capable of achieving
much wider light distribution has been required.
[0006] Embodiments of the present disclosure have been
made in view of the foregoing circumstances, and it is an object
of the embodiments of the present disclosure to provide a
light-emitting device that enables wide light distribution
without using a secondary lens.
[0007] A light-emitting device according to an embodiment
includes: a base including a conductive wiring; a
light-emitting element mounted on the base and adapted to emit
light; a light reflective film provided on an upper surface of
the light-emitting element; and a encapsulant covering the
light-emitting element and the light reflective film, in which
a ratio (H/W) of a height (H) of the encapsulant to a width (W)
a bottom surface of of the encapsulant is less than 0.5.
[0008] Accordingly, the embodiment of the present
disclosure enables the wide light distribution without using
a secondary lens.
[0009]
Fig. 1 is a cross-sectional view showing an example of
a light-emitting device according to a first embodiment.
Fig. 2 is a diagram showing incident-angle dependence of
a light transmissivity of a light reflective film in the
embodiment.
Fig. 3 is a diagram showing a relationship between a
wavelength range of a light reflective film and an emission
wavelength of a light-emitting element in the light-emitting
device of the embodiment.
Fig. 4 is a light distribution characteristic diagram of
the light-emitting device in the embodiment.
Fig. 5 is a light distribution characteristic diagram of
a light-emitting device using a secondary lens in Comparative
Example.
Fig. 6 shows Experimental Examples according to the
embodiment.
Fig. 7 is a cross-sectional view showing an example of
a light-emitting module in a second embodiment.
Figs. 8A and 8B show an example of a light reflective
plate.
Figs. 9A and 9B show luminance distribution
characteristics ofa light-emittingmodule according to Example
2.
[0010] Embodiments of the present disclosure will be
described below with reference to the accompanying drawings as
appropriate. A light-emitting device to be described below is
to embody the technical idea of the present disclosure and is
not intended to limit the present invention unless otherwise
specified. The contents of the description regarding one
embodiment or example can also be applied to other embodiments
and examples.
Furthermore, in the description below, the same names or
reference characters denote the same or similar members, and
thus a detailed description thereof will be omitted as appropriate. Moreover, regardingeachelement configuring the present invention, a plurality of elements may be formed by the same member, thereby allowing this one member to function as these elements. Conversely, the function of one member can be shared and achieved by a plurality of members.
[0011]
[First Embodiment]
Fig. 1 is a schematic configuration diagram showing one
example of a light-emitting device according to a first
embodiment.
As shownin Fig.1, in this embodiment, the light-emitting
device includes a base 101 with conductive wirings 102, and a
light-emitting element 105 mounted on the base 101. The
light-emitting element 105 is mounted in a flip-chip manner via
bonding members 103 to straddle at least a region between a pair
of conductive wirings 102 provided at the surface of the base
101. Alight reflective film106 is formedona light extraction
surface side of the light-emitting element 105 (i.e., upper
surface of the light-emitting element 105). At least a part
of each conductive wiring may be provided with an insulating
member 104. A region of the upper surface of the conductive
wiring102 electrically connected to the light-emittingelement
105 is exposed from the insulating member 104.
[0012] The light transmissivity of the light reflective
film 106 is dependent on an angle of incidence of the light incident from the light-emitting element 105. Fig. 2 is a diagram showing incident-angle dependence of the light transmissivity of the light reflective film 106 in this embodiment. The light reflective film 106 hardly allows the light to pass therethrough in the direction perpendicular to the upper surface of the light-emitting element 105, but increases the amount of the light transmitted as the angle of incidence increases relative to the perpendicular direction.
Specifically, when the incident angle is in a range of -300 to
300, the light transmissivity is approximately 10%. When the
incident angle becomes smaller than -30°, the light
transmissivity gradually becomes larger. Further, when the
incident angle becomes smaller than -50°, the light
transmissivity increases drastically. Likewise, when the
incident angle becomes larger than 300, the light
transmissivity gradually becomes larger. Further, when the
incident angle becomes larger than 500, the light
transmissivity increases drastically. That is, the light
transmissivity of the light reflective film for said light
increases as an absolute value of an incident angle increases.
The formation of such a reflective film can achieve the batwing
light distribution characteristics shown in Fig. 4.
The term "batwing light distribution characteristics" as
used herein means the light distribution characteristics
exhibiting a first peak in a first region with a light distribution angle of less than 900, the first peak having a higher intensity than that at the light distribution angle of
900, as well as a second peak in a second region with a light
distribution angle of more than 90, the second peak having a
higher intensity than that at the light distribution angle of
900.
[0013] The light-emitting element 105 is covered with a
light transmissive encapsulant 108. The encapsulant 108 is
disposed on the base to cover the light-emitting element 105
in order to protect the light-emitting element 105 from an
external environment and to optically control the light output
from the light-emittingelement. The encapsulant108 is formed
substantially in the dome shape. The encapsulant 108 covers
the light-emitting element 105 with the light reflective film
106 disposed thereto, the surfaces of the conductive wirings
102 located around the light-emitting element 105, and
connection portions between the light-emitting element 105
including the bonding members 103 and the conductive wirings
102. That is, the upper surface and lateral surfaces of the
light reflective film 106 are in contact with the encapsulant
108, and the lateral surfaces of the light-emitting element 105
not covered with the light reflective film 106 are also in
contact with the encapsulant 108. The connection portions may
be covered with an underfill, not with the encapsulant 108. In
this case, the encapsulant 108 is formed to cover the upper surface of the underfill and the light-emitting element. In this embodiment, the light-emitting element 105 is directly covered with the encapsulant 108.
[0014] The encapsulant 108 is preferably formed to have
a circular or ellipsoidal outer shape in the top view, with the
ratio of a height (H) of the encapsulant in an optical-axis
direction to a diameter (width: W) of the encapsulant in the
top view set to a value less than 0.5. For the encapsulant 108
having the ellipsoidal shape, there are a major axis and a minor
axis that can be considered as the length of the width, but the
minor axis is defined as a diameter (W) of the encapsulant 108
in the present specification. The upper surface of the
encapsulant 108 is formed in a convex curved shape.
With this arrangement, the light emitted from the
light-emitting element 105 is refracted at an interface between
the encapsulant 108 and air, which can achieve the wider light
distribution.
Here, the height (H) of the encapsulant indicates the
height from a mounting surface for the light-emitting element
105 as shown in Fig. 1. The width (W) of the encapsulant
indicates its diameter when the encapsulant has a circular
bottom surface as mentioned above, or alternatively indicates
the length of the shortest part thereof when the encapsulant
has any shape other than the circle.
[0015] Fig. 4 shows an example of changes in the light distribution characteristics depending on the presence or absence of the encapsulant 108. In Fig. 4, the solid line shows the light distribution characteristic of a light-emitting device 100 in the first embodiment. On the other hand, the dotted line shows the light distribution characteristic of a light-emitting device fabricated in the same way as in the first embodiment except that the encapsulant 108 is not formed.
As can be seen from Fig. 4 according to the light-emitting
device in the first embodiment, the first peak moves in the
direction that decreases the light distribution angle as well
as the second peak moving in the direction that increases the
light distribution angle, as compared with a light-emitting
device without the encapsulant 108. Therefore, the
light-emitting device in the first embodiment can achieve the
wider light distribution.
[0016] The use of both the light reflective film 106 and
the encapsulant 108 in this way can achieve the desired light
distribution characteristics without using the secondary lens.
That is, the formation of the light reflective film 106 can
reduce the luminance directly above the light-emitting element
105, while the encapsulant 108 can concentrate on widening the
distribution of the light from the light-emitting element 105,
which enables significant downsizing of the encapsulant with
a lens function.
In other words, conventionally, reduction in luminance directly above the light-emitting element while widening the light distribution is possible only by adjusting a height of the encapsulant, as a result, the height of the encapsulant must be increased In contrast, the light-emitting device in this embodiment includes the light reflective film 106 having reducedluminance directlyabove the light-emittingelement105, thereby achieving the batwing light distribution characteristics. Thereby, the encapsulant 108 can be configured to focus on the function of widening the light distribution. Thus, this embodiment can achieve downsizing of the light-emitting device.
This arrangement can achieve a thinned backlight module
(i. e. , light-emitting module) with which non-uniform luminance
is reduced, as will be mentioned later. Fig. 5 shows the light
distribution characteristics obtained by using the secondary
lensas acomparativeexample. Evenwithoutusingany secondary
lens, the light-emitting device in this embodiment can achieve
substantially the same light distribution characteristics as
when using a secondary lens.
[0017] Nine light-emittingdevices withdifferentheights
(H) in the optical axis direction of the encapsulants 108 and
different diameters (widths: W) of the encapsulants in the top
view were fabricated. The results of their light distribution
characteristics are shown in Figs. 6A-6I. The light-emitting
element used therein was a blue LED having a substantially square shape with one side of 600 pm in length in the planar view and a thickness of 150 pm. The light reflective film 106 formed on the main surface of the light-emitting element 105 is configuredofelevenlayersby repeatedly formingaSiO 2 layer
(82 nm in thickness) and a ZrO 2 layer (54 nm in thickness).
Regarding each of the nine light-emitting devices No. 1
to No. 9, the ratio of the height (H) of the encapsulant to the
diameter (width: W) of the encapsulant is shown in Table 1.
[Table 1]
No.1 No.2 No.3 No.4 No.5 No.6 No.7 No.8 No.9
H(mm) 0.70 0.89 0.92 0.79 0.93 1.09 0.74 1.00 1.18
W(mm) 2.76 2.78 2.56 3.06 3.14 3.11 3.40 3.28 3.29
H/W 0.25 0.32 0.36 0.26 0.30 0.35 0.22 0.30 0.36
Result Fig. Fig. Fig. Fig. Fig. Fig. Fig. Fig. Fig.
6A 6B 6C 6D 6E 6F 6G 6H 61
As can be seen from the experimental results, the light
distribution characteristics did not change so much due to the
difference in the diameter of the encapsulant. However, the
ratio of the height (H) of the encapsulant to the diameter
(width: W) of the encapsulant affected the light distribution
characteristics.
The graphs of Figs. 6A-6I show that the ratio (H/W) of
the height (H) to the width (W) of the encapsulant is preferably
0.3 or less in order to achieve a wider light distribution.
[0018] Preferred examples of the light-emitting device
100 in this embodiment will be described below.
(Base 101)
The base 101 is a member for mounting the light-emitting
element 105. The base 101 has the conductive wirings 102 on
its surface to supply electric power to the light-emitting
element 105.
Examples of a material for the base 101 can include
ceramics, and resins such as a phenol resin, an epoxy resin,
a polyimide resin, a BT resin, polyphthalamide (PPA), and
polyethylene terephthalate (PET). Among them, the resin is
preferably selected as the material in terms of low cost and
formability. The thickness of the base can be selected as
appropriate. The base may be either a rigid base or a flexible
base manufacturable by a roll-to-roll system. The rigid base
may be a thinned rigid base that is bendable.
[0019] To obtain the light-emitting device with high
resistance to heat and light, ceramics are preferably selected
as the material for the base 101. Examples of ceramics can
include alumina, mullite, forsterite, glass-ceramics,
nitride-based (e.g., AlN) ceramics, and carbide-based (e.g.,
SiC) ceramics. Among them, ceramics made of alumina or mainly
containing alumina are preferable.
[0020] In the use of a resin as the material for the base
101, an inorganic filler such as glass fiber, SiO 2 , TiO 2 , or
A1 2 0 3 , is mixed into the resin, thereby allowing the base to
have improved mechanical strength and improved optical
reflectance, reduced thermalexpansion rate, and the like. The
base 101 may be any other member as long as it can separate and
insulate a pair of conductive wirings 102 from each other. The
base 101may employ a so-called metalbase that includes a metal
member with an insulating layer formed therein.
[0021]
(Conductive Wiring 102)
The conductive wirings 102 are members electrically
connected to electrodes of the light-emitting element 105 and
adapted to supply current (electric power) from the outside to
the light-emitting element. That is, the conductive wiring
serves as an electrode or a part thereof for energization with
the power from the outside. Normally, the conductive wirings
are formed of at least two wirings, namely, positive and
negative wirings spaced apart from each other.
[0022] Each conductive wiring 102 is formed over at least
an upper surface of the base that serves as a mounting surface
for the light-emitting element 105. Material for the
conductive wiring 102 can be selected as appropriate, depending
on material used for the base 101, a manufacturing method
thereof, and the like. For example, when ceramic is used as
the material for the base 101, the conductive wirings 102 are
preferably made of material having a high melting point that can withstand the sintering temperature of a ceramic sheet.
Specifically, metal with a high melting point, such as tungsten
or molybdenum, is preferably used as the material for the
conductive wiring. Further, other metal materials, such as
nickel, gold, or silver may be formed to cover the
above-mentioned surface of the conductive wiring by plating,
sputtering, vapor deposition, etc.
[0023] When the glass epoxy resin is used as the material
for the base 101, the material for the conductive wiring 102
is preferably made of material that is easy to process. In the
case of using the epoxy resin injection-molded, the conductive
wiring 102 is made of material that can be easily processed by
punching, etching, bending, etc., and has a relatively high
mechanical strength. Specifically, examples of the conductive
wiring can include metals, such as copper, aluminum, gold,
silver, tungsten, iron, and nickel, and a metal layer or lead
frame made of an iron-nickel alloy, phosphor bronze, an
iron-copper alloy, molybdenum, and the like. The surface of
the lead frame may be coated with a metal material other than
that of a lead frame main body. Such metal materials can be
appropriately selected, for example, silver alone, or an alloy
ofsilver and copper, gold, aluminumor rhodium. Alternatively,
the conductive wiring can be formed of multiple layers using
silver or eachalloy. Suitable methods for coatingwithametal
materialcaninclude sputtering, vapor deposition, and the like as well as the plating.
[0024]
(Bonding member 103)
The bonding members 103 are members for fixing the
light-emitting element 105 onto the base 101 or conductive
wirings102. In the flip-chipmounting, conductive members are
used as the bonding members in the same manner as in this
embodiment. Specifically, suitable materials for the bonding
member can include an Au-containing alloy, an Ag-containing
alloy, a Pd-containing alloy, an In-containing alloy, a Pb-Pd
containing alloy, an Au-Ga containing alloy, an Au-Sn
containing alloy, an Sn-containing alloy, an Sn-Cu containing
alloy, anSn-Cu-Ag containing alloy, anAu-Ge containing alloy,
an Au-Si containing alloy, an Al-containing alloy, a Cu-In
containing alloy, and a mixture of metal and a flux.
[0025] Suitable forms of the bondingmember103 caninclude
a liquid-type, a paste-type, and/or a solid-type (e.g.,
sheet-shaped, block-shaped, wire-shaped and/or powder-form).
The form of the bonding member can be selected based on the
composition thereof, the shape of the base, and the like, as
appropriate. These bonding members 103 may be formed of a
single member or a combination of several kinds of members.
[0026]
(Insulating Member 104)
The conductive wirings 102 are preferably covered with the insulatingmember104 except forparts thereofelectrically connected to the light-emitting element 105 and other materials.
That is, as shown in the respective figures, a resist for
insulating and covering the conductive wirings 102 may be
disposed over the base. The insulating member 104 can function
as such a resist.
[0027] In the case of disposing the insulating member 104,
a white-based filler can be contained in the insulating member.
The white-based filler contained in the insulating member can
reduce leakage and absorption of light, thereby enabling
improvement of the light extraction efficiency of the
light-emitting device 100 as well as insulating the conductive
wirings 102.
Material for the insulating member 104 can be
appropriately selected on the basis that the material is less
likely to absorb the light from the light-emitting-element and
have an insulating property. Examples of the material for the
insulating member can include epoxy, silicone, modified
silicone, urethane, oxetane, acrylic, polycarbonate, and
polyimide resins.
[0028]
(Light-Emitting Element 105)
The light-emitting element 105 mounted on the base can
be one known in the art. In this embodiment, a light-emitting
diode is preferably used as the light-emitting element 105.
A light-emitting element 105 that emits light at an
appropriate wavelength can be selected. For example, a blue
or green light-emitting element can utilize ZnSe, a
nitride-based semiconductor (InxAlyGai_x_yN, 0 X, 0 Y, X
+ Y 1), or GaP. A light transmissive sapphire substrate and
the like canbeusedas agrowthsubstrate. Aredlight-emitting
element can use GaAlAs, AlInGaP, etc. Moreover, semiconductor
light-emitting elements made of any material other than the
materials mentioned above can also be used. The composition,
emission color, and size of the light-emitting element for use,
and the number of light-emitting elements for use, and the like
can be selected as appropriate in accordance with the purpose.
[0029] Various emission wavelengths can be selected
dependingon the materialof the semiconductor layer andamixed
crystal ratio thereof. The light-emitting element may have
positive and negative electrodes on the same surface side to
enable the flip-chip mounting, or may alternatively have
positive and negative electrodes on its different surfaces.
[0030] The light-emitting element 105 in this embodiment
has a light transmissive substrate, and a semiconductor layer
stacked on the substrate. The semiconductor layer includes an
n-type semiconductor layer, an active layer, and a p-type
semiconductor layer formed in this order. An n-type electrode
is formed on the n-type semiconductor layer, and a p-type
electrode is formed on a p-type semiconductor layer.
[0031] As shown in Fig. 1, the light-emitting element 105
is mounted in a flip-chip manner on the conductive wirings 102
disposed on the surface of the base 101 via the bonding members
103. A surface of the light-emitting element 105 opposed to
the surface thereof with the electrodes formed thereon, that
is, a main surface of the light transmissive substrate would
serve as a light extraction surface. However, in this
embodiment, the light reflective film106 is formed on the light
extraction surface, and thus the lateral surface of the
light-emitting element 105 practically serves as the light
extraction surface. That is, part of the light emitted from
the light-emitting element 105 and directed toward the main
surface of the light-emitting element 105 is returned to the
light-emitting element 105 by the light reflective film 106,
thenrepeatedly reflectedinside the light-emittingelement105,
and eventually output from the lateral surfaces of the
light-emitting element 105. Therefore, the light distribution
characteristics of the light-emitting device 100 (see the
dotted line in Fig. 4) exhibit the characteristics of a
combination of the light passing through the light reflective
film 106 and the light emitted from the lateral surfaces of the
light-emitting element 105.
[0032] The light-emitting element 105 is disposed to
straddle the region between the two conductive wirings 102 that
are isolated and insulated on positive and negative sides. The light-emitting element 105 is electrically connected and mechanically fixed to the conductive wirings via the conductive bonding members 103. To mount the light-emitting element 105, a method using bumps can be employed as well as a method using solder paste. As a light-emitting element 105, a small-sized package product which includes the light-emitting element encapsulated with a resin or the like can also be used. The shape or structure of the light-emitting element 15 can be appropriately selected.
[0033] As will be described below, in the case of the
light-emitting device including a wavelength conversionmember,
the light-emitting element suitably uses a nitride
semiconductor (InxAlyGai_x_yN, 0 X, 0 Y, X + Y 1) capable
of emitting light with a short wavelength that can efficiently
excite a wavelength conversion layer.
[0034] Although an embodiment using flip-chip mounting
has been described as an example, certain embodiments of the
present invention may employ a mounting state in which an
insulating base side of a light-emitting element serves as the
mounting surface, and electrodes formed on the upper surface
of the light-emitting element are connected to wires. In this
case, the upper surface of the light-emitting element is an
electrode-formed surface side, and the light reflective film
is positioned on the electrode-formed surface side.
[0035]
(Light Reflective Film 106)
The light reflective film 106 is formed on the light
extraction surface side, which is the main surface of the
light-emitting element 105.
Material for the light reflective film may be one which
reflects at least the light emitted from the light-emitting
element 105, for example, metal or resin containing a white
filler.
A dielectric multilayer film can be used to produce the
reflective film with less light absorption. Additionally, the
reflectance of the light reflective film can be suitably
adjusted by designing the dielectric multilayer film, or its
reflectance can also be controlled by adjusting the angle of
the light. In particular, the reflectance is increased in the
direction perpendicular to the light extraction surface (also
called the optical axis direction), and decreased at a large
angle relative to the optical axis due to increase of the light
transmissivity of the reflective film, which can control the
shape of the batwing light distribution.
[0036] Regarding a reflection wavelength range in the
optical axis direction of the dielectric multilayer film, i.e.
in the direction perpendicular to the upper surface of the
light-emitting element, as shown in Fig. 3, it is preferable
to widen a region on a long wavelength side of the reflection
wavelength range, with respect to the emission peak wavelength of the light-emitting element 105.
This is because as the angle from the optical axis is
varied, in other words, as the angle from the optical axis of
the incident light is increased, the reflection wavelength
range of the dielectric multilayer film is shifted to the short
wavelength side. By widening the reflection wavelength range
toward the long wavelength side with respect to the emission
wavelength, the adequate reflectance can be maintained up to
a wide angle, that is, for light incident from the
light-emitting element at a large angle relative to the optical
axis.
Materials suitable for use in the dielectric multilayer
film can be a metal oxide film material, a metal nitride film,
an oxynitride film, or the like. Organic materials, such as
a silicone resinor a fluorine resin, can alsobe used. However,
the material for the dielectric multilayer can be selected from
ones other than those described above.
[0037]
(Encapsulant 108)
Materials suitable for use in the encapsulant 108 can be
light transmissive materials, including an epoxy resin, a
silicone resin, a mixed resin thereof, or glass. Among them,
the silicone resin is preferably selected by taking into
consideration the resistance to light and the formability.
[0038] The encapsulant 108 can contain: a light diffusion material, a wavelength conversion material, such as phosphors or quantum dots that absorbs part of light from the light-emitting element 105 to output light with a different wavelength from that of the light emitted from the light-emitting element; and a colorant corresponding to the color of emitted light from the light-emitting element.
In the case of adding these materials to the encapsulant
108, itispreferable touse ones less likely toaffect the light
distribution characteristics. For example, the material
having a particle size of 0.2 pm or less is preferable because
it less likely to affects the light distribution
characteristics. The term "particle size" as used in the
present specification means an average particle size, and the
average particle size is measured based on a
Fisher-SubSieve-Sizers-No. (F.S.S.S.No) using an air
permeability method.
[0039] The encapsulant 108 can be formed by compression
molding or injection molding to cover the light-emitting
element 105. Alternatively, the material for the encapsulant
108 is optimized its viscosity to be dropped or drawn on the
light-emitting element 105, thereby controlling the shape of
the encapsulant 108 by the surface tension of the material
itself.
[0040] In the latter formation method, a mold is not
required, so that the encapsulant can be formed by a simpler method. Other thanadjusting theviscosityof thebasematerial of the encapsulant 108, the viscosity of the encapsulant material can be adjusted by using the above-mentioned light diffusion material, wavelength conversion material, and/or colorant to form the encapsulant 108 with a desired level of viscosity.
[0041]
[Second Embodiment]
Fig. 7 is a cross-sectional view of a light-emitting
module 300 including a light-emitting device 200 in a second
embodiment. In this embodiment, a plurality of the
light-emitting elements 105 is mounted at predetermined
intervals on thebase101. At leastone light reflectivemember
110 is disposed between the adjacent light-emitting elements
105 so as to reflect the light emitted at a small angle relative
to the upper surface of the light-emitting element (i.e., upper
surface of the base 101). That is, the light-emitting device
200 is an integrated light-emitting device that includes a
plurality of the light-emitting devices 100 of the first
embodiment and the light reflective member110 disposedbetween
the respective light-emitting devices 100. A light diffusion
plate 111 for diffusing the light from the light-emitting
element 105 is disposed above the light-emitting devices 100
and the light reflective member 110 and substantially in
parallelwith the upper surfaces of the light-emitting elements.
A wavelength conversion layer 112 for converting part of the
light emitted from the light-emittingelements105 to light with
a different wavelength is disposed above the light diffusion
plate111and substantiallyinparallelwith the light diffusion
plate 111.
[0042] In general, as the ratio of a distance between the
base 101 and the light diffusion plate 111 (hereinafter maybe
referred to as an optical distance: OD) to a distance between
the adjacent light-emitting elements (hereinafter may be
referred to as apitch) is decreased, the amount oflight between
the light-emitting elements 105 on the surface of the light
diffusion plate 111 becomes small, causing a dark space.
However, with the arrangement including the light
reflective member 110 disposed in this way, the light reflected
by the light reflective member 110 compensates for the amount
of light between the light-emitting elements, whereby the
non-uniform luminance on the surface of the light diffusion
plate 111 can be reduced even in a region with a smaller ratio
of OD/Pitch.
Specifically, in the light-emitting device 200 of the
second embodiment, an inclination angle 0 of a light reflective
surface of the light reflective member 110 relative to the base
101 is set such that the non-uniform luminance on the surface
of the light diffusion plate 111 is reduced taking into
consideration the light distribution characteristics of the respective light-emitting devices 100. Regarding the light distribution characteristics of the plurality of light-emitting devices 100 arranged, each light-emitting device 100 preferably has the light distribution characteristics that the amount of light becomes large in a region with a large light distribution angle, i.e., in a region at alight distribution angle ofaround 900, in order to reduce the non-uniformluminance on the surface of the light diffusion plate 111 and to achieve the thinned light-emitting device 200.
[0043] When the ratio of OD/Pitch is small, for example,
0.2 or less, an elevation angle at which the incident light
enters the light reflective member110is less than220 relative
to the light-emitting surface of the light-emitting element 105.
Thus, to increase the reflectance of the light by the light
reflective member 110 at the low OD/Pitch of 0.2 or less, the
light distribution characteristics of the light-emitting
device 100 preferably has the feature that, for example, the
amount oflight at the elevation angle ofless than 200 relative
to the upper surface of the base is large. Specifically, the
first and second peaks of the emission intensity are preferably
positioned in a range of the elevation angle of less than 200.
Here, the elevation angle of 200 corresponds to the light
distribution angles of -70° and+700 in Fig. 4. In other words,
the first peak of emission intensity is positioned in a range
ofless than -700 of the lightdistributionangle, and the second peak of emission intensity is positioned in a range of greater than +700 of the light distribution angle, as shown in Fig. 4.
The amount of light in a range of the elevation angle of less
than 200 is preferably 30% or more of the whole amount of light,
and more preferably 40% or more thereof.
[0044]
(Light Reflective Member 110)
The light reflective member 110 is provided between the
adjacent light-emitting elements 105.
The light reflective member may be formed of a material
that reflects at least light with the emission wavelength of
the light-emitting element 105. For example, a metal plate or
resin containing a white filler can be suitably used for the
light reflective member.
A dielectric multilayer film can be used as a reflective
surface of the light reflectivemember toproduce the reflective
surface with less light absorption. Additionally, the
reflectance of the light reflective member can be appropriately
adjusted by designing the dielectric multilayer film, or its
reflectance can also be controlled by the angle of the light.
[0045] The height of the light reflective member 110 and
the inclinationangle 0of the light reflective surface relative
to the surface of the base 101 can be set to appropriate values.
The reflective surface of the light reflective member 110 may
be a planar surface or a curved surface. To obtain the desired light distribution characteristics, the suitable inclination angle 0 and shape of the reflective surface can be set. The height of the light reflective member 110 is preferably set at
0.3 times or less and more preferably 0.2 times or less the
distance between the adjacent light-emitting elements. This
arrangement can provide the thinned light-emitting module 300
with less non-uniform luminance.
[0046] For the light-emitting device 200 used in an
environment where the use temperature tends to change
significantly, the linear expansion coefficient of the light
reflective member 110 needs to be close to that of the base 101.
In the case where the light reflective member 110 significantly
differs from the base 101 in the linear expansion coefficient,
warpage might occur in the light-emitting device 200 due to the
change in temperature, or otherwise the positionalrelationship
between the components, especially, between the light-emitting
device100 and the light reflective member110might shift, thus
possibly failing to obtain the desired optical properties.
However, the linear expansion coefficient is a physical
property and thus there are not somany alternatives in reality.
For this reason, the light reflective member 110 is preferably
formedby a filmmoldedcomponent thatis elastically deformable
in order to reducing the occurrence of warpage of the
light-emitting device 200 even in the case where the light
reflective member significantly differs from the base in the linear expansion coefficient. This is because the light reflective member 110 made of a less elastically deformable material, such as solid material tends to expand while maintaining its shape, but the film-shaped light reflective member can be appropriately deformed to compensate its expansion.
[0047] Preferably, a plurality of the light reflective
members 110 is coupled together into a plate shape to have
through holes 113 where the light-emitting devices 200 are
disposed. Fig. 8 shows such a plate-shaped light reflective
plate 110'. Fig. 8A is a top view of the light reflective plate
110', and FIGT. 8B is a cross-sectional view taken along the
line A-A of Fig. 8A. Such a light reflective plate 110' can
be formed by metal molding, vacuum forming, pressure molding,
press forming, and the like. The light reflective plate 110'
is disposed on the base 101. The light reflective member 110
may be formed by a method which involves drawing a light
reflective resin directly on the base 101, and the like. The
height of the light reflective member 110 is preferably set at
0.3 times or less the distance between the adjacent
light-emitting elements, and for example, more preferably 0.2
times or less the distance between the adjacent light-emitting
elements.
[0048]
[Example 1]
In this example, as shown in Fig. 1, a glass-epoxy-based
material is used for the base 101, and a Cu material of 35 pm
in thickness is used as the conductive wiring.
Anitride-basedblue LEDmay be used as the light-emitting
element 105. The LED has an approximately square shape with
one side of 600 pm in length in the planar view and a thickness
of 150 pm. An epoxy-based white solder resist may be used as
the insulating member 104.
The light reflective film 106 formed on the main surface
of the light-emittingelement105 is configuredofelevenlayers
by repeatedly forming a SiO 2 layer (82 nm in thickness) and a
ZrO 2 layer (54 nm in thickness).
At this time, the light transmissivity of the light
reflective film 106 is shown in Fig. 2. The light
transmissivity in the direction perpendicular to the main
surface side of the light-emittingelement (i.e., in the optical
axis direction) is low, and the light transmissivity of the
light reflective film is increased as an angle away from the
optical axis increases.
The light-emitting element 105 is covered with the
encapsulant 108. The encapsulant 108 is formed of a silicone
resin and has a height (H) of 1. 0 mm and a diameter of the bottom
surface (W) of 3.0 mm.
With this arrangement, the light emitted from the
light-emitting element 105 is refracted at an interface between the encapsulant 108 and air, which widens the range of the light distributionangles. The light distribution characteristicof the light-emitting device 100 obtained by this arrangement is indicated by the solid line in Fig. 4. The light distribution characteristic obtained by a light-emitting device without the encapsulant 108 is indicated by the dotted line in Fig. 4. In this way, the encapsulant 108 is used together with the light reflective film 106, which can achieve the lower OD/Pitch.
[0049]
[Example 2]
In Example 2, a plurality of light-emitting elements 105
of Example 1 are mounted on the base 101, and the at least one
light reflective member 110 is disposed between the adjacent
light-emitting elements. Here, Pitch is set at 12.5 mm.
The light reflective member 110 is a plate-shaped light
reflective plate, which is formed using a polypropylene sheet
containing a TiO 2 filler (having a thickness (t) of 0.2 mm) by
the vacuum forming method so as to have a reflection angle 0
(i.e., elevation angle) of 550 and a height of 2.4 mm. The light
reflective member 110 is a plate-shaped light reflective plate
shown in Fig. 8 and disposed on the insulating member 104.
Over the light reflective member110, amilky-white light
diffusion plate 111 and a wavelength conversion layer 112 are
disposed to form a liquid crystal backlight (i.e.,
light-emitting module). In this arrangement, Figs. 9A and 9B show the result of comparison of the non-uniform luminance on the surface of the light diffusion plate 111 between the presence and absence of the light reflective member 110. Fig.
9A shows a light-emitting module without light reflective
member, and Fig. 9B shows a light-emitting module in the
presence of the light reflective member. As shown in Figs. 9A
and 9B, in the case where the light reflective member is not
disposed, the relative luminance is decreased to in a range of
about 0.6 to about 0.7 within a region where the relative
luminance tended to be high (i.e., in a range of the number of
pixels between about 250 pixels to about 720 pixels). On the
other hand, in the case where the light reflective member is
disposed, the relative luminance isnot decreased tobelow about
0.8 within the region where the relatively luminance tended to
be high (i.e., at the number of pixels between about 250 pixels
to about 720 pixels). In other words, it can be seen the effect
that non-uniform luminance is improved by providing the light
reflective member.
[0050] The light-emitting device and light-emitting
module of the present embodiments can be used in backlight light
sources forliquidcrystaldisplays, various lighting fixtures,
and the like.
[0051] Throughout this specification and the claims which
follow, unless the context requires otherwise, the word
"comprise", and variations such as "comprises" and "comprising", will be understood to imply the inclusion of a stated integer or step or group of integers or steps but not the exclusion of any other integer or step or group of integers or steps.
[0052] The reference toanypriorartin this specification
is not, and should not be taken as, an acknowledgement or any
form of suggestion that the prior art forms part of the common
general knowledge in Australia.
Claims (13)
1. A light-emitting device comprising:
a base including a conductive wiring;
a light-emitting element mounted on the base and
configured to emit light;
a light reflective film provided on an upper surface
of the light-emitting element; and
a encapsulant covering the light-emitting element and
the light reflective film, wherein the encapsulant has a
upper surface with a convex curved shape,
characterized in that a ratio (H/W) of a height (H) of
the encapsulant to a width (W) of a bottom surface of the
encapsulant is 0.3 or less.
2. The light-emitting device according to claim 1,
wherein the light reflective film is configured such that a
light transmissivity of the light reflective film for said
light has incident-angle dependence.
3. The light-emitting device as in claim 1 or 2,
wherein a light transmissivity of the light reflective film
for said light increases as an absolute value of an incident
angle of said light increases.
4. The light-emitting device as in one of claims 1
to 3, wherein the light reflective film is formed of a
dielectric multilayer film.
5. The light-emitting device as in one of claims 1
to 4, wherein:
a reflection wavelength range of the light reflective
film for light perpendicularly incident on the light
reflective film includes an emission peak wavelength of the
light-emitting element, and
in the reflection wavelength range, a region on a
longer wavelength side of the emission peak wavelength is
wider than a region on a shorter wavelength side of the
emission peak wavelength.
6. The light-emitting device as in one of claims 1
to 5, wherein 30% or more of total light emitted from the
light-emitting device is emitted in a direction at an
elevation angle of less than 200 relative to an upper surface
of the base.
7. The light-emitting device as in one of claims 1
to 5, wherein 40% or more of total light emitted from the
light-emitting device is emitted in a direction at an
elevation angle of less than 200 relative to an upper surface
of the base.
8. The light-emitting device as in one of claims 1
to 7, wherein the light-emitting element is mounted in a
flip-chip manner.
9. A light-emitting module comprising:
the light-emitting device as in one of claims 1 to 8;
and a wavelength conversion member located at a light extraction surface side of the light-emitting device, the wave length conversion member being configured to absorb part of the light emitted from the light-emitting element and to convert the absorbed light to light with a wavelength different from an emission wavelength of the light-emitting element.
10. An integrated light-emitting device comprising:
a plurality of the light-emitting devices as in one of
claims 1 to 8,
wherein at least one light reflective member is
disposed between adjacent ones of the light-emitting devices.
11. The integrated light-emitting device according
to claim 10, wherein the light reflective member has a height
that is 0.3 times or less than a distance between the
adjacent light-emitting devices.
12. The integrated light-emitting device according
to claim 10, wherein the light reflective member has a height
0.2 times or less a distance between the adjacent light
emitting devices.
13. A light-emitting module comprising:
the integrated light-emitting device as in one of
claims 10 to 12; and
a wavelength conversion member located at a light
extraction surface side of the integrated light-emitting
device, the wavelength conversion member being configured to absorb part of light from the light-emitting element and to convert absorbed light to light with a wavelength different from an emission wavelength of the light-emitting element.
-60
-60
Pitch
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JP2015-200445 | 2015-10-08 | ||
JP2016-197968 | 2016-10-06 | ||
JP2016197968A JP6506899B2 (en) | 2015-10-08 | 2016-10-06 | Light emitting device, integrated light emitting device and light emitting module |
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AU2016238924A1 AU2016238924A1 (en) | 2017-04-27 |
AU2016238924B2 true AU2016238924B2 (en) | 2021-06-10 |
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JP (3) | JP6506899B2 (en) |
KR (1) | KR102632427B1 (en) |
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Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7082273B2 (en) * | 2017-07-21 | 2022-06-08 | 日亜化学工業株式会社 | Light emitting device, integrated light emitting device and light emitting module |
CN109285929B (en) | 2017-07-21 | 2023-09-08 | 日亚化学工业株式会社 | Light emitting device, integrated light emitting device, and light emitting module |
CN109390327B (en) * | 2017-08-02 | 2020-10-30 | 吴裕朝 | Light-emitting device, backlight module applying same, light source module and preparation method thereof |
JP2019046789A (en) * | 2017-08-31 | 2019-03-22 | 日亜化学工業株式会社 | Light-emitting device |
KR102631105B1 (en) * | 2017-08-31 | 2024-01-30 | 니치아 카가쿠 고교 가부시키가이샤 | Light emitting device |
JP7082272B2 (en) * | 2017-09-27 | 2022-06-08 | 日亜化学工業株式会社 | Light emitting device |
JP7174216B2 (en) * | 2017-10-23 | 2022-11-17 | 日亜化学工業株式会社 | Light-emitting modules and integrated light-emitting modules |
DE102018126783A1 (en) * | 2017-10-26 | 2019-05-02 | Epistar Corporation | Light-emitting device |
JP6870592B2 (en) | 2017-11-24 | 2021-05-12 | 豊田合成株式会社 | Light emitting device |
JP7177331B2 (en) | 2018-06-29 | 2022-11-24 | 日亜化学工業株式会社 | light emitting device |
JP7180552B2 (en) * | 2019-06-21 | 2022-11-30 | 豊田合成株式会社 | Manufacturing control method for light emitting device |
JP7226131B2 (en) | 2019-06-25 | 2023-02-21 | 豊田合成株式会社 | Light emitting device and manufacturing method thereof |
CN112485803A (en) * | 2019-08-21 | 2021-03-12 | Oppo广东移动通信有限公司 | Laser emitting device, manufacturing method thereof and flight time measuring device |
US20230378403A1 (en) * | 2020-10-20 | 2023-11-23 | Dai Nippon Printing Co., Ltd. | Surface-emitting device, display device, sealing member sheet for surface-emitting device, and method for producing surface-emitting device |
CN116779744A (en) * | 2023-06-30 | 2023-09-19 | 淮安澳洋顺昌光电技术有限公司 | Chip-level LED packaging element |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6155699A (en) * | 1999-03-15 | 2000-12-05 | Agilent Technologies, Inc. | Efficient phosphor-conversion led structure |
US6345903B1 (en) * | 2000-09-01 | 2002-02-12 | Citizen Electronics Co., Ltd. | Surface-mount type emitting diode and method of manufacturing same |
US20070138494A1 (en) * | 2005-12-19 | 2007-06-21 | Lumileds Lighting U.S., Llc | Light-emitting device |
US20070284600A1 (en) * | 2006-06-09 | 2007-12-13 | Philips Lumileds Lighting Company, Llc | Low Profile Side Emitting LED |
US20150226400A1 (en) * | 2011-03-25 | 2015-08-13 | Sharp Kabushiki Kaisha | Light-emitting device, illuminating apparatus, and display apparatus |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001257381A (en) * | 2000-03-13 | 2001-09-21 | Sharp Corp | Light-emitting diode, manufacturing method therefor and illumination device |
US7023022B2 (en) * | 2000-11-16 | 2006-04-04 | Emcore Corporation | Microelectronic package having improved light extraction |
JP2002280614A (en) * | 2001-03-14 | 2002-09-27 | Citizen Electronics Co Ltd | Light emitting diode |
RU2207663C2 (en) * | 2001-07-17 | 2003-06-27 | Ооо Нпц Оэп "Оптэл" | Light-emitting diode |
JP2004253436A (en) * | 2003-02-18 | 2004-09-09 | Citizen Electronics Co Ltd | Light emitting diode |
DE102004001312B4 (en) * | 2003-07-25 | 2010-09-30 | Seoul Semiconductor Co., Ltd. | Chip light-emitting diode and method for its production |
JP2006049857A (en) * | 2004-06-29 | 2006-02-16 | Fuji Photo Film Co Ltd | Light source, light source manufacturing method and color thermal printer |
JP2006261540A (en) | 2005-03-18 | 2006-09-28 | Stanley Electric Co Ltd | Light emitting device |
RU53500U1 (en) * | 2005-11-22 | 2006-05-10 | Емельян Михайлович Гамарц | ELECTROLUMINESCENT RADIATOR |
KR100649765B1 (en) * | 2005-12-21 | 2006-11-27 | 삼성전기주식회사 | Led package and back light unit using the same |
JP2008041290A (en) | 2006-08-02 | 2008-02-21 | Akita Denshi Systems:Kk | Lighting device and manufacturing method therefor |
US8755005B2 (en) * | 2008-09-24 | 2014-06-17 | Koninklijke Philips N.V. | Thin edge backlight with LEDS optically coupled to the back surface |
JP2010092672A (en) | 2008-10-06 | 2010-04-22 | Harison Toshiba Lighting Corp | Backlight device, and display device |
JP5347953B2 (en) * | 2009-12-28 | 2013-11-20 | 日亜化学工業株式会社 | Light emitting device and manufacturing method thereof |
CN102804428B (en) * | 2010-03-30 | 2016-09-21 | 大日本印刷株式会社 | LED lead frame or substrate, semiconductor device and LED lead frame or the manufacture method of substrate |
CN102933893B (en) | 2010-06-15 | 2015-06-03 | 夏普株式会社 | Lighting device, display device, and television reception device |
JP5178796B2 (en) * | 2010-09-10 | 2013-04-10 | 三菱電機株式会社 | Light emitting device and lighting device |
JP2012204370A (en) * | 2011-03-23 | 2012-10-22 | Sony Corp | Light source circuit unit, lighting device, and display device |
JP5796209B2 (en) * | 2011-05-23 | 2015-10-21 | パナソニックIpマネジメント株式会社 | LIGHT EMITTING DEVICE AND LIGHTING DEVICE USING THE SAME |
US8624482B2 (en) | 2011-09-01 | 2014-01-07 | Toshiba Techno Center Inc. | Distributed bragg reflector for reflecting light of multiple wavelengths from an LED |
JP2013077798A (en) | 2011-09-14 | 2013-04-25 | Toyoda Gosei Co Ltd | Glass sealing led lamp and manufacturing method of the same |
TW201413347A (en) * | 2012-09-19 | 2014-04-01 | Chi Lin Technology Co Ltd | Backlight module having light wave length converting element |
TWI528083B (en) * | 2012-11-29 | 2016-04-01 | 鴻海精密工業股份有限公司 | Backlight module |
JP2014187095A (en) * | 2013-03-22 | 2014-10-02 | Toshiba Lighting & Technology Corp | Led module and illumination device |
JP6179854B2 (en) * | 2013-07-23 | 2017-08-16 | パナソニックIpマネジメント株式会社 | lighting equipment |
JP6273124B2 (en) * | 2013-11-08 | 2018-01-31 | シチズン電子株式会社 | LED lighting device |
WO2015092696A1 (en) | 2013-12-19 | 2015-06-25 | Koninklijke Philips N.V. | Led module with uniform phosphor illumination |
CN104766916A (en) * | 2014-01-07 | 2015-07-08 | 易美芯光(北京)科技有限公司 | LED integrated light source adopting inverted blue light chip for packaging |
CN103872223A (en) * | 2014-01-26 | 2014-06-18 | 上海瑞丰光电子有限公司 | LED (light-emitting diode) chip scale packaging method |
RU151161U1 (en) * | 2014-08-19 | 2015-03-20 | Общество с ограниченной ответственностью "ЭНЕРКОМ" | A WHITE LIGHT SOURCE AND A LAMP CONTAINING SUCH A SOURCE |
-
2016
- 2016-10-06 JP JP2016197968A patent/JP6506899B2/en active Active
- 2016-10-07 BR BR112018006931-0A patent/BR112018006931B1/en active IP Right Grant
- 2016-10-07 AU AU2016238924A patent/AU2016238924B2/en active Active
- 2016-10-07 RU RU2018112372A patent/RU2717381C2/en active
- 2016-10-07 CA CA2999401A patent/CA2999401A1/en active Pending
- 2016-10-07 TW TW109137811A patent/TWI799754B/en active
- 2016-10-07 TW TW105132674A patent/TWI712181B/en active
- 2016-10-07 KR KR1020160129813A patent/KR102632427B1/en active IP Right Grant
- 2016-10-08 CN CN201611144127.6A patent/CN106571421B/en active Active
- 2016-10-08 CN CN202110686880.2A patent/CN113437202A/en active Pending
-
2018
- 2018-04-17 JP JP2018079375A patent/JP7175099B2/en active Active
-
2021
- 2021-08-06 JP JP2021129946A patent/JP7252483B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6155699A (en) * | 1999-03-15 | 2000-12-05 | Agilent Technologies, Inc. | Efficient phosphor-conversion led structure |
US6345903B1 (en) * | 2000-09-01 | 2002-02-12 | Citizen Electronics Co., Ltd. | Surface-mount type emitting diode and method of manufacturing same |
US20070138494A1 (en) * | 2005-12-19 | 2007-06-21 | Lumileds Lighting U.S., Llc | Light-emitting device |
US20070284600A1 (en) * | 2006-06-09 | 2007-12-13 | Philips Lumileds Lighting Company, Llc | Low Profile Side Emitting LED |
US20150226400A1 (en) * | 2011-03-25 | 2015-08-13 | Sharp Kabushiki Kaisha | Light-emitting device, illuminating apparatus, and display apparatus |
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TWI712181B (en) | 2020-12-01 |
RU2018112372A3 (en) | 2019-12-05 |
CN106571421B (en) | 2021-07-09 |
RU2018112372A (en) | 2019-10-07 |
CN106571421A (en) | 2017-04-19 |
JP2018139303A (en) | 2018-09-06 |
JP2021170688A (en) | 2021-10-28 |
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BR112018006931A2 (en) | 2018-10-16 |
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AU2016238924A1 (en) | 2017-04-27 |
KR20170044032A (en) | 2017-04-24 |
TW202112181A (en) | 2021-03-16 |
JP7175099B2 (en) | 2022-11-18 |
CN113437202A (en) | 2021-09-24 |
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