KR102130386B1 - 반도체 제조 장치 및 반도체 장치의 제조 방법 - Google Patents

반도체 제조 장치 및 반도체 장치의 제조 방법 Download PDF

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Publication number: KR102130386B1
Authority: KR; South Korea
Prior art keywords: die; lighting device; area; illuminates; center
Prior art date: 2017-09-19

Application number

KR1020180105215A

Other languages

English (en)

Korean (ko)

Other versions

KR20190032195A (ko

Inventor

히데하루 고바시

Original Assignee

파스포드 테크놀로지 주식회사

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2017-09-19

Filing date

2018-09-04

Publication date

2020-07-06

2018-09-04 Application filed by 파스포드 테크놀로지 주식회사 filed Critical 파스포드 테크놀로지 주식회사

2019-03-27 Publication of KR20190032195A publication Critical patent/KR20190032195A/ko

2020-07-06 Application granted granted Critical

2020-07-06 Publication of KR102130386B1 publication Critical patent/KR102130386B1/ko

Links

238000000034 method Methods 0.000 title claims abstract description 44
239000004065 semiconductor Substances 0.000 title claims abstract description 19
238000004519 manufacturing process Methods 0.000 title claims abstract description 18
238000005286 illumination Methods 0.000 claims abstract description 53
238000003384 imaging method Methods 0.000 claims abstract description 30
230000003287 optical effect Effects 0.000 claims abstract description 9
239000000758 substrate Substances 0.000 claims description 76
238000007689 inspection Methods 0.000 claims description 55
238000012986 modification Methods 0.000 description 14
230000004048 modification Effects 0.000 description 14
238000012545 processing Methods 0.000 description 12
239000011295 pitch Substances 0.000 description 6
238000010586 diagram Methods 0.000 description 5
238000003860 storage Methods 0.000 description 5
230000002950 deficient Effects 0.000 description 4
239000000463 material Substances 0.000 description 3
230000035945 sensitivity Effects 0.000 description 3
239000000853 adhesive Substances 0.000 description 2
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230000006870 function Effects 0.000 description 2
230000001678 irradiating effect Effects 0.000 description 2
238000012544 monitoring process Methods 0.000 description 2
238000001179 sorption measurement Methods 0.000 description 2
238000012546 transfer Methods 0.000 description 2
238000005282 brightening Methods 0.000 description 1
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238000001514 detection method Methods 0.000 description 1
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PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
General Physics & Mathematics (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Die Bonding (AREA)
Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Wire Bonding (AREA)
Testing Or Measuring Of Semiconductors Or The Like (AREA)
Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

KR1020180105215A 2017-09-19 2018-09-04 반도체 제조 장치 및 반도체 장치의 제조 방법 KR102130386B1 (ko)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JPJP-P-2017-178969		2017-09-19
JP2017178969A JP7010633B2 (ja)	2017-09-19	2017-09-19	半導体製造装置および半導体装置の製造方法

Publications (2)

Publication Number	Publication Date
KR20190032195A KR20190032195A (ko)	2019-03-27
KR102130386B1 true KR102130386B1 (ko)	2020-07-06

Family

ID=65770976

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1020180105215A KR102130386B1 (ko)	2017-09-19	2018-09-04	반도체 제조 장치 및 반도체 장치의 제조 방법

Country Status (4)

Country	Link
JP (1)	JP7010633B2 (zh)
KR (1)	KR102130386B1 (zh)
CN (1)	CN109524320B (zh)
TW (1)	TWI678746B (zh)

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* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP7151642B2 (ja) *	2019-06-28	2022-10-12	住友電気工業株式会社	面発光レーザ、その製造方法およびその検査方法
JP7377655B2 (ja) *	2019-09-19	2023-11-10	ファスフォードテクノロジ株式会社	ダイボンディング装置および半導体装置の製造方法
JP7437987B2 (ja) *	2020-03-23	2024-02-26	ファスフォードテクノロジ株式会社	ダイボンディング装置および半導体装置の製造方法
CN112992692B (zh) *	2021-05-19	2021-07-20	佛山市联动科技股份有限公司	一种全自动切割引线的方法及***
JP2022182232A (ja) *	2021-05-28	2022-12-08	ファスフォードテクノロジ株式会社	ダイボンディング装置および半導体装置の製造方法

Citations (2)

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Publication number	Priority date	Publication date	Assignee	Title
KR101431917B1 (ko)	2012-12-27	2014-08-27	삼성전기주식회사	반도체 패키지의 검사장비
JP2017117916A (ja)	2015-12-24	2017-06-29	ファスフォードテクノロジ株式会社	半導体製造装置および半導体装置の製造方法

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JPS5538003A (en) *	1978-09-08	1980-03-17	Hitachi Ltd	Rectilinear pattern detecting device
JP2003185593A (ja)	2001-12-21	2003-07-03	Nec Electronics Corp	ウェーハ外観検査装置
US20080024794A1 (en)	2004-06-04	2008-01-31	Yoko Miyazaki	Semiconductor Surface Inspection Apparatus and Method of Illumination
TWI412736B (zh) *	2009-12-04	2013-10-21	Delta Electronics Inc	基板內部缺陷檢查裝置及方法
US8766192B2 (en) *	2010-11-01	2014-07-01	Asm Assembly Automation Ltd	Method for inspecting a photovoltaic substrate
WO2012081587A1 (ja) *	2010-12-14	2012-06-21	株式会社ニコン	検査方法、検査装置、露光管理方法、露光システムおよび半導体デバイス
JP5277266B2 (ja) *	2011-02-18	2013-08-28	株式会社日立ハイテクインスツルメンツ	ダイボンダ及び半導体製造方法
JP2013197226A (ja) *	2012-03-19	2013-09-30	Hitachi High-Tech Instruments Co Ltd	ダイボンディング方法及びダイボンダ
JP2014060249A (ja) *	2012-09-18	2014-04-03	Hitachi High-Tech Instruments Co Ltd	ダイボンダ、および、ダイの位置認識方法
TWI570823B (zh) *	2013-08-14	2017-02-11	新川股份有限公司	半導體製造裝置以及半導體裝置的製造方法
WO2016088721A1 (ja) *	2014-12-05	2016-06-09	株式会社アルバック	基板監視装置、および、基板監視方法
JP6669523B2 (ja) *	2016-02-15	2020-03-18	ファスフォードテクノロジ株式会社	ダイボンダおよび半導体装置の製造方法
JP6683500B2 (ja) *	2016-02-24	2020-04-22	株式会社ディスコ	検査装置及びレーザー加工装置

2017
- 2017-09-19 JP JP2017178969A patent/JP7010633B2/ja active Active
2018
- 2018-09-03 TW TW107130824A patent/TWI678746B/zh active
- 2018-09-04 KR KR1020180105215A patent/KR102130386B1/ko active IP Right Grant
- 2018-09-18 CN CN201811090665.0A patent/CN109524320B/zh active Active

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR101431917B1 (ko)	2012-12-27	2014-08-27	삼성전기주식회사	반도체 패키지의 검사장비
JP2017117916A (ja)	2015-12-24	2017-06-29	ファスフォードテクノロジ株式会社	半導体製造装置および半導体装置の製造方法

Also Published As

Publication number	Publication date
CN109524320B (zh)	2023-03-24
TW201929113A (zh)	2019-07-16
JP2019054203A (ja)	2019-04-04
KR20190032195A (ko)	2019-03-27
JP7010633B2 (ja)	2022-01-26
TWI678746B (zh)	2019-12-01
CN109524320A (zh)	2019-03-26

Legal Events

Date	Code	Title
2018-09-04	A201	Request for examination
2020-02-28	E902	Notification of reason for refusal
2020-06-19	E701	Decision to grant or registration of patent right
2020-06-30	GRNT	Written decision to grant

Publication	Publication Date	Title
KR102130386B1 (ko)	2020-07-06	반도체 제조 장치 및 반도체 장치의 제조 방법
TWI624887B (zh)	2018-05-21	半導體製造裝置及半導體裝置的製造方法
KR102100889B1 (ko)	2020-04-16	다이 본딩 장치 및 반도체 장치의 제조 방법
KR102219591B1 (ko)	2021-02-25	반도체 제조 장치 및 반도체 장치의 제조 방법
JP7225337B2 (ja)	2023-02-20	半導体製造装置および半導体装置の製造方法
JP7029900B2 (ja)	2022-03-04	ダイボンディング装置および半導体装置の製造方法
CN113436986B (zh)	2024-02-20	芯片贴装装置及半导体器件的制造方法
KR102304880B1 (ko)	2021-09-27	반도체 제조 장치 및 반도체 장치의 제조 방법
TWI823297B (zh)	2023-11-21	黏晶裝置及半導體裝置的製造方法
JP7502108B2 (ja)	2024-06-18	ダイボンディング装置および半導体装置の製造方法
JP2023100562A (ja)	2023-07-19	半導体製造装置、検査装置および半導体装置の製造方法
JP2023100561A (ja)	2023-07-19	半導体製造装置、検査装置および半導体装置の製造方法