JP7010633B2 - 半導体製造装置および半導体装置の製造方法 - Google Patents
半導体製造装置および半導体装置の製造方法 Download PDFInfo
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- JP7010633B2 JP7010633B2 JP2017178969A JP2017178969A JP7010633B2 JP 7010633 B2 JP7010633 B2 JP 7010633B2 JP 2017178969 A JP2017178969 A JP 2017178969A JP 2017178969 A JP2017178969 A JP 2017178969A JP 7010633 B2 JP7010633 B2 JP 7010633B2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Die Bonding (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Wire Bonding (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017178969A JP7010633B2 (ja) | 2017-09-19 | 2017-09-19 | 半導体製造装置および半導体装置の製造方法 |
TW107130824A TWI678746B (zh) | 2017-09-19 | 2018-09-03 | 半導體製造裝置以及半導體裝置的製造方法 |
KR1020180105215A KR102130386B1 (ko) | 2017-09-19 | 2018-09-04 | 반도체 제조 장치 및 반도체 장치의 제조 방법 |
CN201811090665.0A CN109524320B (zh) | 2017-09-19 | 2018-09-18 | 半导体制造装置及半导体器件的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017178969A JP7010633B2 (ja) | 2017-09-19 | 2017-09-19 | 半導体製造装置および半導体装置の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2019054203A JP2019054203A (ja) | 2019-04-04 |
JP2019054203A5 JP2019054203A5 (zh) | 2020-08-13 |
JP7010633B2 true JP7010633B2 (ja) | 2022-01-26 |
Family
ID=65770976
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017178969A Active JP7010633B2 (ja) | 2017-09-19 | 2017-09-19 | 半導体製造装置および半導体装置の製造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7010633B2 (zh) |
KR (1) | KR102130386B1 (zh) |
CN (1) | CN109524320B (zh) |
TW (1) | TWI678746B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7151642B2 (ja) * | 2019-06-28 | 2022-10-12 | 住友電気工業株式会社 | 面発光レーザ、その製造方法およびその検査方法 |
JP7377655B2 (ja) * | 2019-09-19 | 2023-11-10 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
JP7437987B2 (ja) * | 2020-03-23 | 2024-02-26 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
CN112992692B (zh) * | 2021-05-19 | 2021-07-20 | 佛山市联动科技股份有限公司 | 一种全自动切割引线的方法及*** |
JP2022182232A (ja) * | 2021-05-28 | 2022-12-08 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003185593A (ja) | 2001-12-21 | 2003-07-03 | Nec Electronics Corp | ウェーハ外観検査装置 |
WO2005119227A1 (ja) | 2004-06-04 | 2005-12-15 | Tokyo Seimitsu Co., Ltd. | 半導体外観検査装置及び照明方法 |
JP2017117916A (ja) | 2015-12-24 | 2017-06-29 | ファスフォードテクノロジ株式会社 | 半導体製造装置および半導体装置の製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5538003A (en) * | 1978-09-08 | 1980-03-17 | Hitachi Ltd | Rectilinear pattern detecting device |
TWI412736B (zh) * | 2009-12-04 | 2013-10-21 | Delta Electronics Inc | 基板內部缺陷檢查裝置及方法 |
US8766192B2 (en) * | 2010-11-01 | 2014-07-01 | Asm Assembly Automation Ltd | Method for inspecting a photovoltaic substrate |
WO2012081587A1 (ja) * | 2010-12-14 | 2012-06-21 | 株式会社ニコン | 検査方法、検査装置、露光管理方法、露光システムおよび半導体デバイス |
JP5277266B2 (ja) * | 2011-02-18 | 2013-08-28 | 株式会社日立ハイテクインスツルメンツ | ダイボンダ及び半導体製造方法 |
JP2013197226A (ja) * | 2012-03-19 | 2013-09-30 | Hitachi High-Tech Instruments Co Ltd | ダイボンディング方法及びダイボンダ |
JP2014060249A (ja) * | 2012-09-18 | 2014-04-03 | Hitachi High-Tech Instruments Co Ltd | ダイボンダ、および、ダイの位置認識方法 |
KR101431917B1 (ko) * | 2012-12-27 | 2014-08-27 | 삼성전기주식회사 | 반도체 패키지의 검사장비 |
TWI570823B (zh) * | 2013-08-14 | 2017-02-11 | 新川股份有限公司 | 半導體製造裝置以及半導體裝置的製造方法 |
WO2016088721A1 (ja) * | 2014-12-05 | 2016-06-09 | 株式会社 アルバック | 基板監視装置、および、基板監視方法 |
JP6669523B2 (ja) * | 2016-02-15 | 2020-03-18 | ファスフォードテクノロジ株式会社 | ダイボンダおよび半導体装置の製造方法 |
JP6683500B2 (ja) * | 2016-02-24 | 2020-04-22 | 株式会社ディスコ | 検査装置及びレーザー加工装置 |
-
2017
- 2017-09-19 JP JP2017178969A patent/JP7010633B2/ja active Active
-
2018
- 2018-09-03 TW TW107130824A patent/TWI678746B/zh active
- 2018-09-04 KR KR1020180105215A patent/KR102130386B1/ko active IP Right Grant
- 2018-09-18 CN CN201811090665.0A patent/CN109524320B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003185593A (ja) | 2001-12-21 | 2003-07-03 | Nec Electronics Corp | ウェーハ外観検査装置 |
WO2005119227A1 (ja) | 2004-06-04 | 2005-12-15 | Tokyo Seimitsu Co., Ltd. | 半導体外観検査装置及び照明方法 |
JP2017117916A (ja) | 2015-12-24 | 2017-06-29 | ファスフォードテクノロジ株式会社 | 半導体製造装置および半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR102130386B1 (ko) | 2020-07-06 |
CN109524320B (zh) | 2023-03-24 |
TW201929113A (zh) | 2019-07-16 |
JP2019054203A (ja) | 2019-04-04 |
KR20190032195A (ko) | 2019-03-27 |
TWI678746B (zh) | 2019-12-01 |
CN109524320A (zh) | 2019-03-26 |
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