KR102028006B1 - Cleaning composition for electronic material - Google Patents
Cleaning composition for electronic material Download PDFInfo
- Publication number
- KR102028006B1 KR102028006B1 KR1020140005396A KR20140005396A KR102028006B1 KR 102028006 B1 KR102028006 B1 KR 102028006B1 KR 1020140005396 A KR1020140005396 A KR 1020140005396A KR 20140005396 A KR20140005396 A KR 20140005396A KR 102028006 B1 KR102028006 B1 KR 102028006B1
- Authority
- KR
- South Korea
- Prior art keywords
- cleaning liquid
- liquid composition
- ether
- compound
- monomethyl ether
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 49
- 239000000203 mixture Substances 0.000 title claims abstract description 48
- 239000012776 electronic material Substances 0.000 title claims abstract description 27
- 239000007788 liquid Substances 0.000 claims abstract description 32
- -1 imidazole derivative compound Chemical class 0.000 claims abstract description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 150000007514 bases Chemical class 0.000 claims abstract description 14
- GDRRCHJTUJBMQA-UHFFFAOYSA-N 2-methyl-1-propan-2-ylimidazole Chemical compound CC(C)N1C=CN=C1C GDRRCHJTUJBMQA-UHFFFAOYSA-N 0.000 claims abstract description 7
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 claims abstract description 6
- GIWQSPITLQVMSG-UHFFFAOYSA-N 1,2-dimethylimidazole Chemical compound CC1=NC=CN1C GIWQSPITLQVMSG-UHFFFAOYSA-N 0.000 claims abstract description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 11
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 10
- 239000003960 organic solvent Substances 0.000 claims description 10
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 9
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- 239000011737 fluorine Substances 0.000 claims description 9
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 7
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical group COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 6
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 6
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 6
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims description 6
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 6
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 claims description 6
- 239000002202 Polyethylene glycol Substances 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 6
- 229920001223 polyethylene glycol Polymers 0.000 claims description 6
- FPGGTKZVZWFYPV-UHFFFAOYSA-M tetrabutylammonium fluoride Chemical compound [F-].CCCC[N+](CCCC)(CCCC)CCCC FPGGTKZVZWFYPV-UHFFFAOYSA-M 0.000 claims description 6
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 5
- 150000001412 amines Chemical class 0.000 claims description 5
- VTKRSTQMGNRMHL-UHFFFAOYSA-N amino 4-nitrobenzoate Chemical compound NOC(=O)C1=CC=C([N+]([O-])=O)C=C1 VTKRSTQMGNRMHL-UHFFFAOYSA-N 0.000 claims description 5
- HMBHAQMOBKLWRX-UHFFFAOYSA-N 2,3-dihydro-1,4-benzodioxine-3-carboxylic acid Chemical compound C1=CC=C2OC(C(=O)O)COC2=C1 HMBHAQMOBKLWRX-UHFFFAOYSA-N 0.000 claims description 4
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 4
- 229940075419 choline hydroxide Drugs 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- NFJSYLMJBNUDNG-UHFFFAOYSA-N 1,3-dipropylimidazolidin-2-one Chemical compound CCCN1CCN(CCC)C1=O NFJSYLMJBNUDNG-UHFFFAOYSA-N 0.000 claims description 3
- KQIXMZWXFFHRAQ-UHFFFAOYSA-N 1-(2-hydroxybutylamino)butan-2-ol Chemical compound CCC(O)CNCC(O)CC KQIXMZWXFFHRAQ-UHFFFAOYSA-N 0.000 claims description 3
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 claims description 3
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 3
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 3
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 3
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 claims description 3
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 claims description 3
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 claims description 3
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 claims description 3
- FETMDPWILVCFLL-UHFFFAOYSA-N 2-[2-(2-propan-2-yloxyethoxy)ethoxy]ethanol Chemical compound CC(C)OCCOCCOCCO FETMDPWILVCFLL-UHFFFAOYSA-N 0.000 claims description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 3
- HCGFUIQPSOCUHI-UHFFFAOYSA-N 2-propan-2-yloxyethanol Chemical compound CC(C)OCCO HCGFUIQPSOCUHI-UHFFFAOYSA-N 0.000 claims description 3
- YCGHZPCZCOSQKQ-UHFFFAOYSA-N 3-(2-ethylhexoxy)-n,n-dimethylpropanamide Chemical compound CCCCC(CC)COCCC(=O)N(C)C YCGHZPCZCOSQKQ-UHFFFAOYSA-N 0.000 claims description 3
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 3
- LVYXPOCADCXMLP-UHFFFAOYSA-N 3-butoxy-n,n-dimethylpropanamide Chemical compound CCCCOCCC(=O)N(C)C LVYXPOCADCXMLP-UHFFFAOYSA-N 0.000 claims description 3
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 claims description 3
- VZETXHUGXMEFRF-UHFFFAOYSA-N C(=O)(OCC1=CC=CC=C1)NO.ONC(OCC1=CC=CC=C1)=O Chemical compound C(=O)(OCC1=CC=CC=C1)NO.ONC(OCC1=CC=CC=C1)=O VZETXHUGXMEFRF-UHFFFAOYSA-N 0.000 claims description 3
- 229920001174 Diethylhydroxylamine Polymers 0.000 claims description 3
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 claims description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 3
- PVCJKHHOXFKFRP-UHFFFAOYSA-N N-acetylethanolamine Chemical compound CC(=O)NCCO PVCJKHHOXFKFRP-UHFFFAOYSA-N 0.000 claims description 3
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 claims description 3
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 claims description 3
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 3
- 229960002887 deanol Drugs 0.000 claims description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 3
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 3
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 3
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 3
- FVCOIAYSJZGECG-UHFFFAOYSA-N diethylhydroxylamine Chemical compound CCN(O)CC FVCOIAYSJZGECG-UHFFFAOYSA-N 0.000 claims description 3
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 claims description 3
- MOVBJUGHBJJKOW-UHFFFAOYSA-N methyl 2-amino-5-methoxybenzoate Chemical compound COC(=O)C1=CC(OC)=CC=C1N MOVBJUGHBJJKOW-UHFFFAOYSA-N 0.000 claims description 3
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 claims description 3
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 3
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 3
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 3
- QSUJAUYJBJRLKV-UHFFFAOYSA-M tetraethylazanium;fluoride Chemical compound [F-].CC[N+](CC)(CC)CC QSUJAUYJBJRLKV-UHFFFAOYSA-M 0.000 claims description 3
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 3
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 3
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 claims description 3
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 claims description 3
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 3
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 claims description 2
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- YOUGRGFIHBUKRS-UHFFFAOYSA-N benzyl(trimethyl)azanium Chemical compound C[N+](C)(C)CC1=CC=CC=C1 YOUGRGFIHBUKRS-UHFFFAOYSA-N 0.000 claims 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 1
- 150000002825 nitriles Chemical class 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 26
- 239000002184 metal Substances 0.000 abstract description 26
- 238000005260 corrosion Methods 0.000 abstract description 13
- 230000007797 corrosion Effects 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 6
- 230000000052 comparative effect Effects 0.000 description 24
- 239000000758 substrate Substances 0.000 description 15
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229960004418 trolamine Drugs 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229920005862 polyol Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- BIIBYWQGRFWQKM-JVVROLKMSA-N (2S)-N-[4-(cyclopropylamino)-3,4-dioxo-1-[(3S)-2-oxopyrrolidin-3-yl]butan-2-yl]-2-[[(E)-3-(2,4-dichlorophenyl)prop-2-enoyl]amino]-4,4-dimethylpentanamide Chemical compound CC(C)(C)C[C@@H](C(NC(C[C@H](CCN1)C1=O)C(C(NC1CC1)=O)=O)=O)NC(/C=C/C(C=CC(Cl)=C1)=C1Cl)=O BIIBYWQGRFWQKM-JVVROLKMSA-N 0.000 description 2
- QIVUCLWGARAQIO-OLIXTKCUSA-N (3s)-n-[(3s,5s,6r)-6-methyl-2-oxo-1-(2,2,2-trifluoroethyl)-5-(2,3,6-trifluorophenyl)piperidin-3-yl]-2-oxospiro[1h-pyrrolo[2,3-b]pyridine-3,6'-5,7-dihydrocyclopenta[b]pyridine]-3'-carboxamide Chemical compound C1([C@H]2[C@H](N(C(=O)[C@@H](NC(=O)C=3C=C4C[C@]5(CC4=NC=3)C3=CC=CN=C3NC5=O)C2)CC(F)(F)F)C)=C(F)C=CC(F)=C1F QIVUCLWGARAQIO-OLIXTKCUSA-N 0.000 description 2
- HRWADRITRNUCIY-UHFFFAOYSA-N 2-(2-propan-2-yloxyethoxy)ethanol Chemical compound CC(C)OCCOCCO HRWADRITRNUCIY-UHFFFAOYSA-N 0.000 description 2
- HFGHRUCCKVYFKL-UHFFFAOYSA-N 4-ethoxy-2-piperazin-1-yl-7-pyridin-4-yl-5h-pyrimido[5,4-b]indole Chemical compound C1=C2NC=3C(OCC)=NC(N4CCNCC4)=NC=3C2=CC=C1C1=CC=NC=C1 HFGHRUCCKVYFKL-UHFFFAOYSA-N 0.000 description 2
- FZLSDZZNPXXBBB-KDURUIRLSA-N 5-chloro-N-[3-cyclopropyl-5-[[(3R,5S)-3,5-dimethylpiperazin-1-yl]methyl]phenyl]-4-(6-methyl-1H-indol-3-yl)pyrimidin-2-amine Chemical compound C[C@H]1CN(Cc2cc(Nc3ncc(Cl)c(n3)-c3c[nH]c4cc(C)ccc34)cc(c2)C2CC2)C[C@@H](C)N1 FZLSDZZNPXXBBB-KDURUIRLSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 150000004673 fluoride salts Chemical class 0.000 description 2
- 150000002443 hydroxylamines Chemical class 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- AYOOGWWGECJQPI-NSHDSACASA-N n-[(1s)-1-(5-fluoropyrimidin-2-yl)ethyl]-3-(3-propan-2-yloxy-1h-pyrazol-5-yl)imidazo[4,5-b]pyridin-5-amine Chemical compound N1C(OC(C)C)=CC(N2C3=NC(N[C@@H](C)C=4N=CC(F)=CN=4)=CC=C3N=C2)=N1 AYOOGWWGECJQPI-NSHDSACASA-N 0.000 description 2
- VOVZXURTCKPRDQ-CQSZACIVSA-N n-[4-[chloro(difluoro)methoxy]phenyl]-6-[(3r)-3-hydroxypyrrolidin-1-yl]-5-(1h-pyrazol-5-yl)pyridine-3-carboxamide Chemical compound C1[C@H](O)CCN1C1=NC=C(C(=O)NC=2C=CC(OC(F)(F)Cl)=CC=2)C=C1C1=CC=NN1 VOVZXURTCKPRDQ-CQSZACIVSA-N 0.000 description 2
- XULSCZPZVQIMFM-IPZQJPLYSA-N odevixibat Chemical compound C12=CC(SC)=C(OCC(=O)N[C@@H](C(=O)N[C@@H](CC)C(O)=O)C=3C=CC(O)=CC=3)C=C2S(=O)(=O)NC(CCCC)(CCCC)CN1C1=CC=CC=C1 XULSCZPZVQIMFM-IPZQJPLYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- NYNZQNWKBKUAII-KBXCAEBGSA-N (3s)-n-[5-[(2r)-2-(2,5-difluorophenyl)pyrrolidin-1-yl]pyrazolo[1,5-a]pyrimidin-3-yl]-3-hydroxypyrrolidine-1-carboxamide Chemical compound C1[C@@H](O)CCN1C(=O)NC1=C2N=C(N3[C@H](CCC3)C=3C(=CC=C(F)C=3)F)C=CN2N=C1 NYNZQNWKBKUAII-KBXCAEBGSA-N 0.000 description 1
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 1
- DILISPNYIVRDBP-UHFFFAOYSA-N 2-[3-[2-(2-hydroxypropylamino)pyrimidin-4-yl]-2-naphthalen-2-ylimidazol-4-yl]acetonitrile Chemical compound OC(CNC1=NC=CC(=N1)N1C(=NC=C1CC#N)C1=CC2=CC=CC=C2C=C1)C DILISPNYIVRDBP-UHFFFAOYSA-N 0.000 description 1
- DWKNOLCXIFYNFV-HSZRJFAPSA-N 2-[[(2r)-1-[1-[(4-chloro-3-methylphenyl)methyl]piperidin-4-yl]-5-oxopyrrolidine-2-carbonyl]amino]-n,n,6-trimethylpyridine-4-carboxamide Chemical compound CN(C)C(=O)C1=CC(C)=NC(NC(=O)[C@@H]2N(C(=O)CC2)C2CCN(CC=3C=C(C)C(Cl)=CC=3)CC2)=C1 DWKNOLCXIFYNFV-HSZRJFAPSA-N 0.000 description 1
- LBVMWHCOFMFPEG-UHFFFAOYSA-N 3-methoxy-n,n-dimethylpropanamide Chemical compound COCCC(=O)N(C)C LBVMWHCOFMFPEG-UHFFFAOYSA-N 0.000 description 1
- UXHQLGLGLZKHTC-CUNXSJBXSA-N 4-[(3s,3ar)-3-cyclopentyl-7-(4-hydroxypiperidine-1-carbonyl)-3,3a,4,5-tetrahydropyrazolo[3,4-f]quinolin-2-yl]-2-chlorobenzonitrile Chemical compound C1CC(O)CCN1C(=O)C1=CC=C(C=2[C@@H]([C@H](C3CCCC3)N(N=2)C=2C=C(Cl)C(C#N)=CC=2)CC2)C2=N1 UXHQLGLGLZKHTC-CUNXSJBXSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- RSIWALKZYXPAGW-NSHDSACASA-N 6-(3-fluorophenyl)-3-methyl-7-[(1s)-1-(7h-purin-6-ylamino)ethyl]-[1,3]thiazolo[3,2-a]pyrimidin-5-one Chemical compound C=1([C@@H](NC=2C=3N=CNC=3N=CN=2)C)N=C2SC=C(C)N2C(=O)C=1C1=CC=CC(F)=C1 RSIWALKZYXPAGW-NSHDSACASA-N 0.000 description 1
- QGSSTMZGERKYEU-UHFFFAOYSA-N NO.[F] Chemical compound NO.[F] QGSSTMZGERKYEU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- MCRWZBYTLVCCJJ-DKALBXGISA-N [(1s,3r)-3-[[(3s,4s)-3-methoxyoxan-4-yl]amino]-1-propan-2-ylcyclopentyl]-[(1s,4s)-5-[6-(trifluoromethyl)pyrimidin-4-yl]-2,5-diazabicyclo[2.2.1]heptan-2-yl]methanone Chemical compound C([C@]1(N(C[C@]2([H])C1)C(=O)[C@@]1(C[C@@H](CC1)N[C@@H]1[C@@H](COCC1)OC)C(C)C)[H])N2C1=CC(C(F)(F)F)=NC=N1 MCRWZBYTLVCCJJ-DKALBXGISA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000005210 alkyl ammonium group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- KFSZGBHNIHLIAA-UHFFFAOYSA-M benzyl(trimethyl)azanium;fluoride Chemical compound [F-].C[N+](C)(C)CC1=CC=CC=C1 KFSZGBHNIHLIAA-UHFFFAOYSA-M 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000002438 flame photometric detection Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- IXYXXQNFKSEXJM-UHFFFAOYSA-N n,n-dimethylmethanamine;hydron;fluoride Chemical compound F.CN(C)C IXYXXQNFKSEXJM-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 발명은 1,2-디메틸이미다졸, 1-이소프로필-2-메틸이미다졸 및 1-벤질-2-메틸이미다졸으로 이루어진 군에서 선택되는 적어도 하나의 이미다졸 유도체 화합물, 염기성 화합물 및 물을 포함함으로써, 금속막질 또는 금속배선에 대한 부식 방지 효과가 우수한 전자재료용 세정액 조성물에 관한 것이다.The present invention is at least one imidazole derivative compound, basic compound selected from the group consisting of 1,2-dimethylimidazole, 1-isopropyl-2-methylimidazole and 1-benzyl-2-methylimidazole And water, the present invention relates to a cleaning liquid composition for an electronic material having an excellent corrosion protection effect on metal film or metal wiring.
Description
본 발명은 전자재료용 세정액 조성물에 관한 것으로서, 보다 상세하게는 전자재료 제조 중에 발생하는 오염물의 제거 및 포토레지스트의 박리에 사용될 수 있는 조성물에 관한 것이다.
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to cleaning liquid compositions for electronic materials, and more particularly, to compositions that can be used for removing contaminants and peeling of photoresists that occur during electronic material manufacturing.
반도체 디바이스, FPD와 같은 액정디스플레이 등에 사용되는 전자재료는 다양한 공정을 거쳐 제작되며, 구체적인 예로서, 성막, 노광, 배선 에칭 등의 공정을 거쳐 제조되며, 이러한 공정 중, 기판 표면에 각종의 유기물이나 무기물 등의 크기가 1㎛ 이하인 파티클(Particle)이 부착되어 기판의 오염을 야기한다. 이러한 오염물이 부착한 채로, 다음의 공정 처리를 실시했을 경우, 막의 핀홀이나 피트, 배선의 단선이나 브릿지(Bridge)가 발생하여, 제품의 제조 수율을 크게 저하시킨다. 따라서 이러한 오염물을 제거하기 위한 세정이 각 공정간에 행해지고 있으며, 이를 위한 다양한 세정액이 소개되고 있다.Electronic materials used in semiconductor devices, liquid crystal displays such as FPDs, and the like are manufactured through various processes, and as specific examples, are manufactured through processes such as film formation, exposure, and wiring etching. Particles having a particle size of 1 μm or less are attached to the substrate to contaminate the substrate. When the following process treatment is carried out with these contaminants attached, pinholes and pits of the film, disconnection and bridges of the wiring are generated, which greatly reduces the production yield of the product. Therefore, cleaning to remove such contaminants is performed between the respective processes, and various cleaning liquids for this purpose have been introduced.
일본공개특허 제2002-184743호는 하나 이상의 다가 알콜, 물, 하나 이상의 수혼화성 아민 및 하나 이상의 극성 용매를 포함하는, 기판으로부터 중합체 물질을 제거하기 위한 조성물을 개시하고 있다. 하지만, 상기 조성물은 금속배선의 부식을 야기하는 단점이 있다.Japanese Patent Laid-Open No. 2002-184743 discloses a composition for removing a polymeric material from a substrate, comprising at least one polyhydric alcohol, water, at least one water miscible amine, and at least one polar solvent. However, the composition has a disadvantage of causing corrosion of the metallization.
힌국출원특허 제10-2001-0015565호는 폴리올 화합물, 글리콜 에테르, 5 중량% 이상의 물, 플루오라이드 염, 및 첨가제를 포함하는, 기판으로부터 중합체 물질을 제거하기 위한 조성물을 개시하고 있다. 그러나, 상기 조성물은 다량의 폴리올을 사용하기 때문에 세정액 사용 후 물로 린스할 때 린스성이 떨어지고, 조성물에 포함되는 플루오라이드 염은 장기 사용시 석출의 문제를 야기하며, 금속배선을 부식시키는 문제도 야기한다.Hinge Application No. 10-2001-0015565 discloses a composition for removing polymeric material from a substrate, comprising a polyol compound, glycol ether, at least 5% by weight of water, fluoride salts, and additives. However, since the composition uses a large amount of polyol, the rinsing property is poor when rinsing with water after using the cleaning liquid, and the fluoride salt included in the composition causes problems of precipitation in long-term use, and also causes corrosion of metal wiring. .
힌국출원특허 제10-2006-0076073호는 1종 이상의 폴리올 화합물, 1종 이상의 글리콜 에테르 용매, N-메틸피롤 리돈 및 1종 이상의 부식 억제제를 포함하고, 실질적으로 워터-프리(water-free)인, 기판으로부터 중합체 재료를 제거하기 위한 조성물을 개시하고 있다. 그러나, 상기 조성물은 다량의 유기용매를 사용함으로써 환경적으로 바람직하지 않을 뿐만 아니라, 금속배선의 부식 방지성능이 충분치 못한 단점이 있다.
Hinge Application No. 10-2006-0076073 includes at least one polyol compound, at least one glycol ether solvent, N-methylpyrrolidone and at least one corrosion inhibitor and is substantially water-free. A composition for removing a polymeric material from a substrate is disclosed. However, the composition is not only environmentally unfavorable by using a large amount of organic solvent, but also has the disadvantage that the corrosion protection of the metal wiring is not sufficient.
본 발명은 전자재료 등을 제작하는 공정에서 유리기판 또는 금속막질을 오염시키는 유기 오염물이나 파티클의 제거력 및 유리기판 또는 금속막에 존재하는 포토레지스트의 박리능이 우수할 뿐만 아니라, 금속 배선의 부식 방지 성능이 우수한 전자재료용 세정액 조성물을 제공하는 것을 목적으로 한다.
The present invention is not only excellent in the ability to remove organic contaminants or particles that contaminate the glass substrate or the metal film in the process of manufacturing electronic materials, etc., but also the peeling ability of the photoresist present on the glass substrate or the metal film, as well as corrosion protection of the metal wiring. It is an object to provide this excellent cleaning liquid composition for electronic materials.
1. 1,2-디메틸이미다졸, 1-이소프로필-2-메틸이미다졸 및 1-벤질-2-메틸이미다졸으로 이루어진 군에서 선택되는 적어도 하나의 이미다졸 유도체 화합물; 탄소수 1 내지 20의 알킬암모늄 하이드록사이드 화합물 및 아민 화합물 중 적어도 하나인 염기성 화합물; 및 물을 포함하는 전자재료용 세정액 조성물.1. at least one imidazole derivative compound selected from the group consisting of 1,2-dimethylimidazole, 1-isopropyl-2-methylimidazole and 1-benzyl-2-methylimidazole; A basic compound which is at least one of an alkylammonium hydroxide compound and an amine compound having 1 to 20 carbon atoms; And a cleaning liquid composition for an electronic material comprising water.
2. 위 1에 있어서, 상기 탄소수 1 내지 20의 알킬암모늄 하이드록사이드 화합물은 테트라메틸암모늄 하이드록사이드, 테트라에틸암모늄 하이드록사이드, 테트라프로필암모늄 하이드록사이드, 테트라부틸암모늄 하이드록사이드 및 콜린 하이드록사이드로 이루어진 군에서 선택되는 적어도 하나인, 전자재료용 세정액 조성물.2. In the above 1, wherein the alkyl ammonium hydroxide compound of 1 to 20 carbon atoms is tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide and choline hydroxide Cleaning liquid composition for an electronic material, which is at least one selected from the group consisting of a lockside.
3. 위 1에 있어서, 상기 아민 화합물은 모노에탄올아민, 디에탄올아민, 2-아미노에탄올, 2-(에틸아미노)에탄올, 2-(메틸아미노)에탄올, N-메틸디에탄올아민, 디메틸아미노에탄올, 디에틸아미노에탄올, 니트릴로트리에탄올, 2-(2-아미노에톡시)에탄올, 1-아미노-2-프로판올, 트리에탄올아민, 모노프로판올아민 및 디부탄올아민으로 이루어진 군에서 선택되는 적어도 하나의 알칸올 아민인, 전자재료용 세정액 조성물.3. In the above 1, the amine compound is monoethanolamine, diethanolamine, 2-aminoethanol, 2- (ethylamino) ethanol, 2- (methylamino) ethanol, N-methyldiethanolamine, dimethylaminoethanol At least one alkanol selected from the group consisting of diethylaminoethanol, nitrilotriethanol, 2- (2-aminoethoxy) ethanol, 1-amino-2-propanol, triethanolamine, monopropanolamine and dibutanolamine The cleaning liquid composition for electronic materials which is an amine.
4. 위 1에 있어서, 상기 아민 화합물은 하이드록실아민, 디에틸하이드록실아민, N-(벤질옥시카르보닐)하이드록실아민(N-(Benzyloxycarbonyl)hydroxylamine) 및 o-(4-니트로벤조일)하이드록실아민(o-(4-nitrobenzoyl)hydroxylamine)으로 이루어진 군에서 선택되는 적어도 하나의 하이드록실 아민인, 전자재료용 세정액 조성물.4. The amine compound according to the above 1, wherein the amine compound is hydroxylamine, diethylhydroxylamine, N- (benzyloxycarbonyl) hydroxylamine (N- (Benzyloxycarbonyl) hydroxylamine) and o- (4-nitrobenzoyl) hydride A cleaning liquid composition for an electronic material, which is at least one hydroxyl amine selected from the group consisting of oxylamine (o- (4-nitrobenzoyl) hydroxylamine).
5. 위 1에 있어서, 상기 이미다졸 유도체 화합물 0.01 내지 10중량%, 상기 염기성 화합물 5 내지 30중량% 및 잔량의 물을 포함하는, 전자재료용 세정액 조성물.5. according to the above 1, wherein the imidazole derivative compound 0.01 to 10% by weight, 5 to 30% by weight of the basic compound and the remaining amount of water, the cleaning liquid composition for an electronic material.
6. 위 5에 있어서, 함불소 화합물 0.01 내지 10중량%를 더 포함하는, 전자재료용 세정액 조성물.6. In the above 5, further comprising 0.01 to 10% by weight of the fluorine-containing compound, the cleaning liquid composition for an electronic material.
7. 위 6에 있어서, 상기 함불소 화합물은 불산, 암모늄 플루오라이드, 암모늄바이플루오라이드, 테트라부틸암모늄플루오라이드, 데트라부틸암모늄바이플루오라이드, 테트라메틸암모늄플루오라이드, 테트라에틸암모늄플루오라이드 및 벤질트리메틸암모늄플루오라이드로 이루어진 군에서 선택되는 적어도 하나인, 전자재료용 세정액 조성물.7. In the above 6, the fluorine-containing compound is hydrofluoric acid, ammonium fluoride, ammonium bifluoride, tetrabutylammonium fluoride, detrabutylammonium bifluoride, tetramethylammonium fluoride, tetraethylammonium fluoride and benzyl At least one selected from the group consisting of trimethylammonium fluoride, cleaning liquid composition for an electronic material.
8. 위 5 내지 7 중 어느 한 항에 있어서, 수용성 유기용매 1 내지 50중량% 를 더 포함하는, 전자재료용 세정액 조성물.8. The cleaning liquid composition according to any one of the above 5 to 7, further comprising 1 to 50% by weight of a water-soluble organic solvent.
9. 위 8에 있어서, 상기 수용성 유기용매는 에틸렌글리콜 모노메틸 에테르, 에틸렌글리콜 모노에틸 에테르, 에틸렌글리콜 모노이소프로필 에테르, 에틸렌글리콜 모노부틸 에테르, 디에틸렌글리콜 모노메틸 에테르, 디에틸렌글리콜 모노에틸 에테르, 디에틸렌글리콜 모노이소프로필 에테르, 디에틸렌글리콜 모노부틸 에테르, 트리에틸렌글리콜 모노메틸 에테르, 트리에틸렌글리콜 모노에틸 에테르, 트리에틸렌글리콜 모노이소프로필 에테르, 트리에틸렌글리콜 모노부틸 에테르, 폴리에틸렌글리콜 모노메틸 에테르, 폴리에틸렌글리콜 모노부틸 에테르, 프로필렌글리콜 모노메틸 에테르, 디프로필렌글리콜 모노메틸 에테르, 트리프로필렌글리콜 모노메틸 에테르, 프로필렌글리콜 모노메틸 에테르 아세테이트, N-메틸 피롤리돈(NMP), N-에틸 피롤리돈, 1,3-디메틸-2-이미다졸리디논, 1,3-디프로필-2-이미다졸리디논, γ-부티로락톤, 디메틸술폭사이드(DMSO), 술폴란, 트리에틸포스페이트, 트리부틸포스페이트, 디메틸카보네이트, 에틸렌카보네이트, 포름아미드, N-메틸포름아미드, N,N-디메틸포름아미드, 아세트아미드, N-메틸아세트아미드, N,N-디메틸아세트아미드, N-(2-히드록시에틸)아세트아미드, 3-메톡시-N,N-디메틸프로피온아미드, 3-(2-에틸헥실옥시)-N,N-디메틸프로피온아미드 및 3-부톡시-N,N-디메틸프로피온아미드로 이루어진 군에서 선택되는 적어도 하나인, 전자재료용 세정액 조성물.
9. In the above 8, the water-soluble organic solvent is ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether , Diethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol monomethyl ether , Polyethylene glycol monobutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, N-methyl pyrrolidone (NMP), N-ethyl pyrrolidone , 1,3-di Methyl-2-imidazolidinone, 1,3-dipropyl-2-imidazolidinone, γ-butyrolactone, dimethyl sulfoxide (DMSO), sulfolane, triethyl phosphate, tributyl phosphate, dimethyl carbonate, Ethylene carbonate, formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, N- (2-hydroxyethyl) acetamide, 3 At least one selected from the group consisting of -methoxy-N, N-dimethylpropionamide, 3- (2-ethylhexyloxy) -N, N-dimethylpropionamide and 3-butoxy-N, N-dimethylpropionamide One, the cleaning liquid composition for electronic materials.
본 발명의 전자재료용 세정액 조성물은 전자재료 등의 유리기판 또는 금속막질 표면에 존재하는 유기 오염물 및 파티클의 제거력이 우수하며, 유리기판 또는 금속막질 표면에 존재하는 포토레지스트의 박리에도 유용하게 사용될 수 있다.The cleaning liquid composition for an electronic material of the present invention is excellent in removing organic contaminants and particles existing on a glass substrate or metal film surface such as an electronic material, and may be useful for peeling photoresist present on a glass substrate or metal film surface. have.
또한, 본 발명의 전자재료용 세정액 조성물은 기판상에 형성되어 있는 금속막질 및 금속배선 등에 대한 부식 방지 효과가 우수하다. 특히, Cu, Co, Ru, Pd, W, Ti 등의 전이금속, 전이금속을 포함하는 합금, 금속산화물, 금속질화물, 규소화합물, 규소산화물에 대한 부식 방지 효과가 탁월하다.
In addition, the cleaning liquid composition for an electronic material of the present invention is excellent in the corrosion protection effect on the metal film and metal wiring formed on the substrate. In particular, the anti-corrosion effect is excellent for transition metals such as Cu, Co, Ru, Pd, W, Ti, alloys containing transition metals, metal oxides, metal nitrides, silicon compounds, and silicon oxides.
본 발명은 1,2-디메틸이미다졸, 1-이소프로필-2-메틸이미다졸 및 1-벤질-2-메틸이미다졸으로 이루어진 군에서 선택되는 적어도 하나의 이미다졸 유도체 화합물, 염기성 화합물 및 물을 포함함으로써, 금속막질 또는 금속배선에 대한 부식 방지 효과가 우수한 전자재료용 세정액 조성물에 관한 것이다.
The present invention is at least one imidazole derivative compound, basic compound selected from the group consisting of 1,2-dimethylimidazole, 1-isopropyl-2-methylimidazole and 1-benzyl-2-methylimidazole And water, the present invention relates to a cleaning liquid composition for an electronic material having an excellent corrosion protection effect on metal film or metal wiring.
이하, 본 발명을 보다 상세하게 설명하도록 한다.Hereinafter, the present invention will be described in more detail.
본 발명의 전자재료용 세정액 조성물은 이미다졸 유도체 화합물, 염기성 화합물 및 물을 포함한다.The cleaning liquid composition for an electronic material of the present invention contains an imidazole derivative compound, a basic compound, and water.
본 발명에 따른 이미다졸 유도체 화합물은 1,2-디메틸이미다졸, 1-이소프로필-2-메틸이미다졸 및 1-벤질-2-메틸이미다졸으로 이루어진 군에서 선택되는 적어도 하나인 것을 특징으로 한다.The imidazole derivative compound according to the present invention is at least one selected from the group consisting of 1,2-dimethylimidazole, 1-isopropyl-2-methylimidazole and 1-benzyl-2-methylimidazole. It features.
본 발명에 따른 상기 특정한 이미다졸 유도체 화합물은 반도체 공정 등에 사용되는 금속막, 금속배선 등에 사용되는 금속에 대한 부식 방지 효과가 탁월하다.The specific imidazole derivative compound according to the present invention is excellent in the corrosion protection effect on the metal used in the metal film, metal wiring and the like used in the semiconductor process.
상기 이미다졸 유도체 화합물은 조성물 총 중량에 대하여 0.01 내지 10중량%로 포함되는 것이 바람직하다. 상기 범위에서 금속의 부식 방지 효과가 가장 우수하게 나타날 수 있다. 상기 범위보다 과량으로 포함되는 경우 세정력 및 박리능이 감소할 수도 있으며, 일부 금속의 식각량이 증가할 가능성이 있을 수도 있다.The imidazole derivative compound is preferably included in 0.01 to 10% by weight based on the total weight of the composition. In this range, the corrosion protection effect of the metal may be best exhibited. When included in excess of the above range, the cleaning power and the peeling ability may be reduced, and the etching amount of some metals may be increased.
본 발명에 따른 염기성 화합물은 세정 대상 물품의 표면에 잔류하는 불순물들을 분해 또는 용해하는 기능을 한다. 본 발명에 따른 염기성화합물은 탄소수 1 내지 20의 알킬암모늄 하이드록사이드 화합물 및 아민 화합물 중 적어도 하나를 포함할 수 있다.The basic compound according to the present invention functions to decompose or dissolve impurities remaining on the surface of the article to be cleaned. The basic compound according to the present invention may include at least one of an alkylammonium hydroxide compound having 1 to 20 carbon atoms and an amine compound.
탄소수 1 내지 20의 알킬암모늄 하이드록사이드 화합물의 보다 구체적인 예로는 테트라메틸암모늄 하이드록사이드, 테트라에틸암모늄 하이드록사이드, 테트라프로필암모늄 하이드록사이드, 테트라부틸암모늄 하이드록사이드 및 콜린 하이드록사이드로 이루어진 군에서 선택되는 적어도 하나를 들 수 있다.More specific examples of the alkylammonium hydroxide compound having 1 to 20 carbon atoms include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide and choline hydroxide. At least one selected from the group can be mentioned.
아민 화합물은 알칸올 아민 및 하이드록실 아민 중 적어도 하나일 수 있다.The amine compound may be at least one of alkanol amines and hydroxyl amines.
알칸올 아민의 보다 구체적인 예로는 모노에탄올아민, 디에탄올아민, 2-아미노에탄올, 2-(에틸아미노)에탄올, 2-(메틸아미노)에탄올, N-메틸디에탄올아민, 디메틸아미노에탄올, 디에틸아미노에탄올, 니트릴로트리에탄올, 2-(2-아미노에톡시)에탄올, 1-아미노-2-프로판올, 트리에탄올아민, 모노프로판올아민 및 디부탄올아민로 이루어진 군에서 선택되는 적어도 하나를 들 수 있다.More specific examples of the alkanol amine include monoethanolamine, diethanolamine, 2-aminoethanol, 2- (ethylamino) ethanol, 2- (methylamino) ethanol, N-methyldiethanolamine, dimethylaminoethanol, diethyl And at least one selected from the group consisting of aminoethanol, nitrilotriethanol, 2- (2-aminoethoxy) ethanol, 1-amino-2-propanol, triethanolamine, monopropanolamine and dibutanolamine.
하이드록실 아민의 보다 구체적인 예로는 하이드록실아민, 디에틸하이드록실아민, N-(벤질옥시카르보닐)하이드록실아민(N-(Benzyloxycarbonyl)hydroxylamine) 및 o-(4-니트로벤조일)하이드록실아민(o-(4-nitrobenzoyl)hydroxylamine)으로 이루어진 군에서 선택되는 적어도 하나를 들 수 있다.More specific examples of hydroxyl amines include hydroxylamine, diethylhydroxylamine, N- (benzyloxycarbonyl) hydroxyamine (N- (benzyloxycarbonyl) hydroxylamine) and o- (4-nitrobenzoyl) hydroxylamine ( o- (4-nitrobenzoyl) hydroxylamine) at least one selected from the group consisting of.
본 발명에 따른 염기성 화합물은 조성물 총 중량에 대하여 5 내지 30중량%로 포함되는 것이 바람직하다. 상기 범위에서 세정력 및 박리능이 가장 우수하게 나타날 수 있다. 상기 범위보다 과량으로 포함되는 경우 세정력 및 박리능이 감소할 수도 있으며, 일부 금속의 식각량이 증가할 가능성이 있을 수도 있다.The basic compound according to the present invention is preferably included in 5 to 30% by weight based on the total weight of the composition. In the above range, the cleaning power and the peeling ability may be most excellent. When included in excess of the above range, the cleaning power and the peeling ability may be reduced, and the etching amount of some metals may be increased.
본 발명에 따른 물은 각 성분을 용해하고 전체 조성을 조절하며, 전체 조성물의 잔량은 물이 차지한다. 바람직하게는 상기 성분들이 전술한 함량 범위를 갖도록 조절한다.The water according to the invention dissolves each component and adjusts the overall composition, with the remainder of the total composition being taken up by water. Preferably the components are adjusted to have the aforementioned content ranges.
물은 특별히 한정되는 것은 아니나, 반도체 공정용의 물로서, 비저항값이 18㏁·cm이상인 탈이온수를 사용하는 것이 바람직하다.Although water is not specifically limited, It is preferable to use deionized water whose specific resistance value is 18 Pa * cm or more as water for a semiconductor process.
선택적으로, 본 발명의 세정액 조성물은 함불소 화합물을 더 포함할 수도 있다. 함불소 화합물은 염기성 화합물과 함께 세정 대상 물품의 표면에 잔류하는 불순물들을 분해하는 기능을 한다.Optionally, the cleaning liquid composition of the present invention may further include a fluorine-containing compound. The fluorine-containing compound, together with the basic compound, functions to decompose impurities remaining on the surface of the article to be cleaned.
함불소 화합물의 구체적인 예를 들면, 불산, 암모늄 플루오라이드, 암모늄바이플루오라이드, 테트라부틸암모늄플루오라이드, 데트라부틸암모늄바이플루오라이드, 테트라메틸암모늄플루오라이드, 테트라에틸암모늄플루오라이드, 벤질트리메틸암모늄플루오라이드 등을 각각 단독으로 또는 2종 이상 혼합하여 사용할 수 있으나, 이에 한정되는 것은 아니다.Specific examples of the fluorine-containing compound include hydrofluoric acid, ammonium fluoride, ammonium bifluoride, tetrabutylammonium fluoride, detrabutylammonium bifluoride, tetramethylammonium fluoride, tetraethylammonium fluoride, benzyltrimethylammonium fluoride Ride and the like may be used alone or in combination of two or more, but is not limited thereto.
함불소 화합물은 조성물 총 중량에 대하여 0.01 내지 10중량%로 포함될 수 있다. 상기 범위에서 세정력 및 박리능이 가장 우수하게 나타날 수 있다. 상기 범위보다 과량으로 포함되는 경우 세정력 및 박리능이 감소할 수도 있으며, 일부 금속의 식각량이 증가할 가능성이 있을 수도 있다.The fluorine-containing compound may be included in an amount of 0.01 to 10 wt% based on the total weight of the composition. In the above range, the cleaning power and the peeling ability may be most excellent. When included in excess of the above range, the cleaning power and the peeling ability may be reduced, and the etching amount of some metals may be increased.
선택적으로, 본 발명의 세정액 조성물은 수용성 유기용매를 더 포함할 수도 있다. 수용성 유기용매는 물과 함께 불순물들을 용해 또는 분산시키는 기능을 한다.Optionally, the cleaning liquid composition of the present invention may further include a water-soluble organic solvent. The water-soluble organic solvent functions to dissolve or disperse impurities together with water.
수용성 유기용매의 구체적인 예를 들면, 에틸렌글리콜 모노메틸 에테르, 에틸렌글리콜 모노에틸 에테르, 에틸렌글리콜 모노이소프로필 에테르, 에틸렌글리콜 모노부틸 에테르, 디에틸렌글리콜 모노메틸 에테르, 디에틸렌글리콜 모노에틸 에테르, 디에틸렌글리콜 모노이소프로필 에테르, 디에틸렌글리콜 모노부틸 에테르, 트리에틸렌글리콜 모노메틸 에테르, 트리에틸렌글리콜 모노에틸 에테르, 트리에틸렌글리콜 모노이소프로필 에테르, 트리에틸렌글리콜 모노부틸 에테르, 폴리에틸렌글리콜 모노메틸 에테르, 폴리에틸렌글리콜 모노부틸 에테르, 프로필렌글리콜 모노메틸 에테르, 디프로필렌글리콜 모노메틸 에테르, 트리프로필렌글리콜 모노메틸 에테르, 프로필렌글리콜 모노메틸 에테르 아세테이트, N-메틸 피롤리돈(NMP), N-에틸 피롤리돈, 1,3-디메틸-2-이미다졸리디논, 1,3-디프로필-2-이미다졸리디논, γ-부티로락톤, 디메틸술폭사이드(DMSO), 술폴란, 트리에틸포스페이트, 트리부틸포스페이트, 디메틸카보네이트, 에틸렌카보네이트, 포름아미드, N-메틸포름아미드, N,N-디메틸포름아미드, 아세트아미드, N-메틸아세트아미드, N,N-디메틸아세트아미드, N-(2-히드록시에틸)아세트아미드, 3-메톡시-N,N-디메틸프로피온아미드, 3-(2-에틸헥실옥시)-N,N-디메틸프로피온아미드, 3-부톡시-N,N-디메틸프로피온아미드 등을 각각 단독으로 또는 2종 이상 혼합하여 사용할 수 있다.Specific examples of the water-soluble organic solvent include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene Glycol monoisopropyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol monomethyl ether, polyethylene glycol Monobutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, N-methyl pyrrolidone (NMP), N-ethyl pyrrolidone, 1, 3-D Yl-2-imidazolidinone, 1,3-dipropyl-2-imidazolidinone, γ-butyrolactone, dimethyl sulfoxide (DMSO), sulfolane, triethyl phosphate, tributyl phosphate, dimethyl carbonate, Ethylene carbonate, formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, N- (2-hydroxyethyl) acetamide, 3 -Methoxy-N, N-dimethylpropionamide, 3- (2-ethylhexyloxy) -N, N-dimethylpropionamide, 3-butoxy-N, N-dimethylpropionamide, etc., alone or two, respectively. It can mix and use species.
수용성 유기용매는 조성물 총 중량에 대하여 1 내지 50중량%로 포함될 수 있다. 상기 범위에서 세정력 및 박리능이 가장 우수하게 나타날 수 있으며, 상기 범위보다 과량으로 포함되는 경우 세정력 및 박리능이 감소할 수도 있으며, 일부 성분의 석출이 발생할 가능성이 있을 수도 있다.The water-soluble organic solvent may be included in an amount of 1 to 50% by weight based on the total weight of the composition. In the above range, the cleaning power and the peeling power may be most excellent, and when included in an excess of the above range, the cleaning power and the peeling power may be reduced, and precipitation of some components may occur.
본 발명의 전자재료용 세정액 조성물은 필요에 따라 당분야에 공지된 첨가제를 더 포함할 수도 있다. 이러한 첨가제로는 예를 들면 계면활성제, 킬레이트제 등을 더 포함할 수 있으나, 이에 한정되는 것은 아니다.
The cleaning liquid composition for an electronic material of the present invention may further include an additive known in the art, if necessary. Such additives may further include, for example, surfactants, chelating agents, and the like, but are not limited thereto.
이하, 본 발명의 이해를 돕기 위하여 바람직한 실시예를 제시하나, 이들 실시예는 본 발명을 예시하는 것일 뿐 첨부된 특허청구범위를 제한하는 것이 아니며, 본 발명의 범주 및 기술사상 범위 내에서 실시예에 대한 다양한 변경 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속하는 것도 당연한 것이다. Hereinafter, preferred examples are provided to aid the understanding of the present invention, but these examples are merely illustrative of the present invention and are not intended to limit the scope of the appended claims, which are within the scope and spirit of the present invention. It is apparent to those skilled in the art that various changes and modifications can be made to the present invention, and such modifications and changes belong to the appended claims.
실시예Example
하기 표 1에 기재된 조성으로 세정액 조성물을 제조하였다(단위 중량%).A cleaning liquid composition was prepared in the composition described in Table 1 below (unit weight%).
(H2O)water
(H 2 O)
- TMAH: 테트라메틸암모늄 하이드록사이드
- TBAH: 테트라부틸암모늄 하이드록사이드
- CH: 콜린 하이드록사이드
- TEA: 트리에틸아민
- HA: 하이드록실아민
- 함불소호합물: 암모늄플루오라이드
- DMSO: 디메틸술폭사이드
- IZ: 이미다졸
- MPIZ: 2-메르캅토벤즈이미다졸
- MBIZ: 4-메틸-2-페닐이미다졸
- IPMIZ: 1-이소프로필-2-메틸이미다졸
- BMIZ: 1-벤질-2-메틸이미다졸
TMAH: tetramethylammonium hydroxide
TBAH: tetrabutylammonium hydroxide
CH: choline hydroxide
TEA: triethylamine
HA: hydroxylamine
Fluorine-containing compounds: ammonium fluoride
DMSO: dimethyl sulfoxide
IZ: imidazole
-MPIZ: 2-mercaptobenzimidazole
-MBIZ: 4-methyl-2-phenylimidazole
IPMIZ: 1-isopropyl-2-methylimidazole
BMIZ: 1-benzyl-2-methylimidazole
시험예Test Example
1. 세정력 평가1. Evaluation of cleaning power
유기/무기 잔류물이 존재하는 wafer 기판을 2cmX2cm 크기로 절단한 후, 상기 제조된 실시예 및 비교예들의 세정액 조성물에 2분간 침지하였다. 상기 세정액의 온도는 70℃이고, 침지 후, 탈이온수를 사용하여 1분 동안 린스를 실시하고, 기판을 완전히 건조시켰다.After cutting the wafer substrate with the organic / inorganic residue to a size of 2 cm × 2 cm, it was immersed in the cleaning solution composition of the prepared examples and comparative examples for 2 minutes. The temperature of the cleaning solution is 70 ℃, after immersion, rinsed for 1 minute using deionized water, and the substrate was completely dried.
이후, 세정 전 잔류물 대비 세정 후 잔존하는 잔류물의 비율로 하기 평가 기준에 따라 SEM을 사용하여 평가한 후, 그 결과를 하기 표 2 및 표 3에 나타내었다.Then, after evaluating using a SEM according to the following evaluation criteria as a ratio of the residue remaining after washing to the residue before washing, the results are shown in Table 2 and Table 3.
[평가기준] [Evaluation standard]
◎: 0 ~ 5% 미만 ◎: less than 0-5%
○: 5% 이상 ~ 10% 미만○: 5% or more to less than 10%
△: 10% 이상 ~ 30% 미만△: 10% or more to less than 30%
×: 30% 이상 ~ 100% 이하
×: 30% or more to 100% or less
2. 2. 부식방지성Corrosion Resistance 평가 evaluation
평가대상 금속막이 500Å 두께로 도포된 실리콘 wafer 기판을 2cmX2cm 크기로 절단한 후, 상기 제조된 실시예 및 비교예의 세정액에 각각 10분간 침지하였다. 이때, 상기 세정액의 온도는 70℃이고, 침지 후, 상기와 탈이온수를 사용하여 1분 동안 린스를 실시하고, 기판을 완전히 건조시켰다.After cutting the silicon wafer substrate coated with a metal film thickness of 500 Å to a size of 2cmX2cm, it was immersed for 10 minutes in the cleaning solution of Examples and Comparative Examples prepared above. At this time, the temperature of the cleaning solution is 70 ℃, after immersion, rinsing for 1 minute using the above and deionized water, and the substrate was completely dried.
상기 wafer 기판에 도포된 평가대상 금속막의 두께를 침지 전후로 SEM을 사용하여 측정하고, 각각의 식각속도를 두께 변화로부터 계산하여 측정하고, 그에 대한 평가를 하기 표 2 및 표 3에 나타내었다.The thickness of the evaluation target metal film applied to the wafer substrate was measured using SEM before and after immersion, and each etch rate was calculated from the thickness change, and the evaluation thereof is shown in Tables 2 and 3 below.
표 2 및 표 3을 참고하면, 실시예들의 경우에는 비교예들에 비하여 금속막의 식각량을 현저하게 낮음을 확인할 수 있다. 특히 비교예들의 경우 세정력은 충분히 발휘하는 것들이 있었으나, 금속막에 대한 식각 정도가 큰 문제가 있음을 확인하였다.Referring to Tables 2 and 3, it can be seen that in the embodiments, the etching amount of the metal film is significantly lower than that of the comparative examples. In particular, in the comparative examples, the cleaning power was sufficiently exerted, but it was confirmed that the etching degree to the metal film had a big problem.
한편, 1-이소프로필-2-메틸이미다졸이 다소 과량으로 첨가된 실시예 16의 경우에는 금속막에 대한 방식력이 다소 저하되는 것을 확인하였다.On the other hand, in the case of Example 16 in which 1-isopropyl-2-methylimidazole was added in an excessive amount, it was confirmed that the anticorrosion force on the metal film was slightly decreased.
Claims (9)
1,2-디메틸이미다졸, 1-이소프로필-2-메틸이미다졸 및 1-벤질-2-메틸이미다졸으로 이루어진 군에서 선택되는 적어도 하나의 이미다졸 유도체 화합물 2 내지 10중량%;
탄소수 1 내지 20의 알킬암모늄 하이드록사이드 화합물을 포함하는 염기성 화합물; 및
물을 포함하는 전자재료용 세정액 조성물.
In the cleaning liquid composition for removing a photoresist,
2 to 10% by weight of at least one imidazole derivative compound selected from the group consisting of 1,2-dimethylimidazole, 1-isopropyl-2-methylimidazole and 1-benzyl-2-methylimidazole;
A basic compound comprising an alkylammonium hydroxide compound having 1 to 20 carbon atoms; And
Cleaning liquid composition for an electronic material containing water.
The method of claim 1, wherein the alkylammonium hydroxide compound of 1 to 20 carbon atoms is tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide and choline hydroxide At least one selected from the group consisting of, cleaning liquid composition for an electronic material.
상기 아민 화합물은 모노에탄올아민, 디에탄올아민, 2-아미노에탄올, 2-(에틸아미노)에탄올, 2-(메틸아미노)에탄올, N-메틸디에탄올아민, 디메틸아미노에탄올, 디에틸아미노에탄올, 니트릴로트리에탄올, 2-(2-아미노에톡시)에탄올, 1-아미노-2-프로판올, 트리에탄올아민, 모노프로판올아민 및 디부탄올아민으로 이루어진 군에서 선택되는 적어도 하나의 알칸올 아민인, 전자재료용 세정액 조성물.
The method of claim 1, wherein the basic compound further comprises an amine compound,
The amine compound is monoethanolamine, diethanolamine, 2-aminoethanol, 2- (ethylamino) ethanol, 2- (methylamino) ethanol, N-methyldiethanolamine, dimethylaminoethanol, diethylaminoethanol, nitrile Cleaning liquid for electronic materials, which is at least one alkanol amine selected from the group consisting of rotriethanol, 2- (2-aminoethoxy) ethanol, 1-amino-2-propanol, triethanolamine, monopropanolamine and dibutanolamine Composition.
상기 아민 화합물은 하이드록실아민, 디에틸하이드록실아민, N-(벤질옥시카르보닐)하이드록실아민(N-(Benzyloxycarbonyl)hydroxylamine) 및 o-(4-니트로벤조일)하이드록실아민(o-(4-nitrobenzoyl)hydroxylamine)으로 이루어진 군에서 선택되는 적어도 하나의 하이드록실 아민인, 전자재료용 세정액 조성물.
The method of claim 1, wherein the basic compound further comprises an amine compound,
The amine compound is hydroxylamine, diethylhydroxylamine, N- (benzyloxycarbonyl) hydroxyamine (N- (Benzyloxycarbonyl) hydroxylamine) and o- (4-nitrobenzoyl) hydroxylamine (o- (4 -nitrobenzoyl) hydroxylamine) is at least one hydroxyl amine selected from the group consisting of, cleaning liquid composition for an electronic material.
The cleaning liquid composition according to claim 1, comprising 5 to 30% by weight of the basic compound and a residual amount of water.
The cleaning liquid composition according to claim 5, further comprising 0.01 to 10% by weight of a fluorine-containing compound.
The method of claim 6, wherein the fluorine-containing compound is hydrofluoric acid, ammonium fluoride, ammonium bifluoride, tetrabutylammonium fluoride, detrabutylammonium bifluoride, tetramethylammonium fluoride, tetraethylammonium fluoride and benzyltrimethylammonium At least one selected from the group consisting of fluoride, cleaning liquid composition for an electronic material.
The cleaning liquid composition according to any one of claims 5 to 7, further comprising 1 to 50% by weight of a water-soluble organic solvent.
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