KR102640141B1 - Cleaning solution composition - Google Patents
Cleaning solution composition Download PDFInfo
- Publication number
- KR102640141B1 KR102640141B1 KR1020180157345A KR20180157345A KR102640141B1 KR 102640141 B1 KR102640141 B1 KR 102640141B1 KR 1020180157345 A KR1020180157345 A KR 1020180157345A KR 20180157345 A KR20180157345 A KR 20180157345A KR 102640141 B1 KR102640141 B1 KR 102640141B1
- Authority
- KR
- South Korea
- Prior art keywords
- cleaning liquid
- liquid composition
- minutes
- mask cleaning
- mask
- Prior art date
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- 238000004140 cleaning Methods 0.000 title claims abstract description 91
- 239000000203 mixture Substances 0.000 title claims abstract description 52
- 239000007788 liquid Substances 0.000 claims abstract description 48
- 150000001875 compounds Chemical class 0.000 claims abstract description 39
- 150000001408 amides Chemical class 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 30
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 26
- 239000011368 organic material Substances 0.000 claims description 23
- 239000002798 polar solvent Substances 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 229930195735 unsaturated hydrocarbon Natural products 0.000 claims description 10
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 8
- 229930195734 saturated hydrocarbon Natural products 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 125000000229 (C1-C4)alkoxy group Chemical group 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 6
- 230000005525 hole transport Effects 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 239000003586 protic polar solvent Substances 0.000 claims description 6
- 229920006395 saturated elastomer Polymers 0.000 claims description 6
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 claims description 5
- 150000007530 organic bases Chemical class 0.000 claims description 5
- LBVMWHCOFMFPEG-UHFFFAOYSA-N 3-methoxy-n,n-dimethylpropanamide Chemical compound COCCC(=O)N(C)C LBVMWHCOFMFPEG-UHFFFAOYSA-N 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 4
- 150000007529 inorganic bases Chemical class 0.000 claims description 4
- LVYXPOCADCXMLP-UHFFFAOYSA-N 3-butoxy-n,n-dimethylpropanamide Chemical compound CCCCOCCC(=O)N(C)C LVYXPOCADCXMLP-UHFFFAOYSA-N 0.000 claims description 3
- GXMIHVHJTLPVKL-UHFFFAOYSA-N n,n,2-trimethylpropanamide Chemical compound CC(C)C(=O)N(C)C GXMIHVHJTLPVKL-UHFFFAOYSA-N 0.000 claims description 3
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 claims description 3
- YKOQQFDCCBKROY-UHFFFAOYSA-N n,n-diethylpropanamide Chemical compound CCN(CC)C(=O)CC YKOQQFDCCBKROY-UHFFFAOYSA-N 0.000 claims description 3
- 229940088644 n,n-dimethylacrylamide Drugs 0.000 claims description 3
- YLGYACDQVQQZSW-UHFFFAOYSA-N n,n-dimethylprop-2-enamide Chemical compound CN(C)C(=O)C=C YLGYACDQVQQZSW-UHFFFAOYSA-N 0.000 claims description 3
- MBHINSULENHCMF-UHFFFAOYSA-N n,n-dimethylpropanamide Chemical compound CCC(=O)N(C)C MBHINSULENHCMF-UHFFFAOYSA-N 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 2
- QRWZCJXEAOZAAW-UHFFFAOYSA-N n,n,2-trimethylprop-2-enamide Chemical compound CN(C)C(=O)C(C)=C QRWZCJXEAOZAAW-UHFFFAOYSA-N 0.000 claims description 2
- OVHHHVAVHBHXAK-UHFFFAOYSA-N n,n-diethylprop-2-enamide Chemical compound CCN(CC)C(=O)C=C OVHHHVAVHBHXAK-UHFFFAOYSA-N 0.000 claims description 2
- KERBAAIBDHEFDD-UHFFFAOYSA-N n-ethylformamide Chemical compound CCNC=O KERBAAIBDHEFDD-UHFFFAOYSA-N 0.000 claims description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- SDNHWPVAYKOIGU-UHFFFAOYSA-N 3-ethyl-2-methylpent-2-enamide Chemical compound CCC(CC)=C(C)C(N)=O SDNHWPVAYKOIGU-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 19
- 230000001105 regulatory effect Effects 0.000 abstract description 5
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 53
- 239000010410 layer Substances 0.000 description 20
- PSGAAPLEWMOORI-PEINSRQWSA-N medroxyprogesterone acetate Chemical compound C([C@@]12C)CC(=O)C=C1[C@@H](C)C[C@@H]1[C@@H]2CC[C@]2(C)[C@@](OC(C)=O)(C(C)=O)CC[C@H]21 PSGAAPLEWMOORI-PEINSRQWSA-N 0.000 description 16
- LIWAQLJGPBVORC-UHFFFAOYSA-N N-ethyl-N-methylamine Natural products CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 description 15
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 13
- 150000002430 hydrocarbons Chemical group 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- -1 methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, isobutoxy, tert-butoxy, sec-butoxy Chemical group 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 11
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 10
- 239000011146 organic particle Substances 0.000 description 10
- 238000001179 sorption measurement Methods 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 8
- RASFLGVDOLMZBD-UHFFFAOYSA-N 2-(9,9'-spirobi[fluorene]-2-yl)-9,9'-spirobi[fluorene] Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1(C1=C2)C3=CC=CC=C3C1=CC=C2C(C=C12)=CC=C2C2=CC=CC=C2C21C1=CC=CC=C1C1=CC=CC=C21 RASFLGVDOLMZBD-UHFFFAOYSA-N 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 229910001374 Invar Inorganic materials 0.000 description 5
- MHABMANUFPZXEB-UHFFFAOYSA-N O-demethyl-aloesaponarin I Natural products O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=C(O)C(C(O)=O)=C2C MHABMANUFPZXEB-UHFFFAOYSA-N 0.000 description 5
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- PMDCZENCAXMSOU-UHFFFAOYSA-N N-ethylacetamide Chemical compound CCNC(C)=O PMDCZENCAXMSOU-UHFFFAOYSA-N 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 4
- IWZZBBJTIUYDPZ-DVACKJPTSA-N (z)-4-hydroxypent-3-en-2-one;iridium;2-phenylpyridine Chemical compound [Ir].C\C(O)=C\C(C)=O.[C-]1=CC=CC=C1C1=CC=CC=N1.[C-]1=CC=CC=C1C1=CC=CC=N1 IWZZBBJTIUYDPZ-DVACKJPTSA-N 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 3
- YFPJFKYCVYXDJK-UHFFFAOYSA-N Diphenylphosphine oxide Chemical compound C=1C=CC=CC=1[P+](=O)C1=CC=CC=C1 YFPJFKYCVYXDJK-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 2
- VBQVHWHWZOUENI-UHFFFAOYSA-N 1-phenyl-2H-quinoline Chemical compound C1C=CC2=CC=CC=C2N1C1=CC=CC=C1 VBQVHWHWZOUENI-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- OAOXYBSWOZWDBB-UHFFFAOYSA-N 3-(6-diphenylphosphorylnaphthalen-2-yl)-1,10-phenanthroline Chemical compound C1(=CC=CC=C1)P(=O)(C=1C=C2C=CC(=CC2=CC=1)C=1C=NC2=C3N=CC=CC3=CC=C2C=1)C1=CC=CC=C1 OAOXYBSWOZWDBB-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- UEEXRMUCXBPYOV-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 UEEXRMUCXBPYOV-UHFFFAOYSA-N 0.000 description 2
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- JMCVCHBBHPFWBF-UHFFFAOYSA-N n,n-diethyl-2-methylprop-2-enamide Chemical compound CCN(CC)C(=O)C(C)=C JMCVCHBBHPFWBF-UHFFFAOYSA-N 0.000 description 2
- QJQAMHYHNCADNR-UHFFFAOYSA-N n-methylpropanamide Chemical compound CCC(=O)NC QJQAMHYHNCADNR-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
- 231100000167 toxic agent Toxicity 0.000 description 2
- 239000003440 toxic substance Substances 0.000 description 2
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 description 2
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- 229960004418 trolamine Drugs 0.000 description 2
- ROLDYPKMIPEYHX-UHFFFAOYSA-N (2-ethyl-2-methyl-1,3-dioxolan-4-yl)methanol Chemical compound CCC1(C)OCC(CO)O1 ROLDYPKMIPEYHX-UHFFFAOYSA-N 0.000 description 1
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- BOHGAOWOIJMTPZ-UHFFFAOYSA-N 1,3-dioxolan-4-ylmethanol Chemical compound OCC1COCO1 BOHGAOWOIJMTPZ-UHFFFAOYSA-N 0.000 description 1
- KQIXMZWXFFHRAQ-UHFFFAOYSA-N 1-(2-hydroxybutylamino)butan-2-ol Chemical compound CCC(O)CNCC(O)CC KQIXMZWXFFHRAQ-UHFFFAOYSA-N 0.000 description 1
- VERMWGQSKPXSPZ-BUHFOSPRSA-N 1-[(e)-2-phenylethenyl]anthracene Chemical class C=1C=CC2=CC3=CC=CC=C3C=C2C=1\C=C\C1=CC=CC=C1 VERMWGQSKPXSPZ-BUHFOSPRSA-N 0.000 description 1
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 1
- VFMUXPQZKOKPOF-UHFFFAOYSA-N 2,3,7,8,12,13,17,18-octaethyl-21,23-dihydroporphyrin platinum Chemical compound [Pt].CCc1c(CC)c2cc3[nH]c(cc4nc(cc5[nH]c(cc1n2)c(CC)c5CC)c(CC)c4CC)c(CC)c3CC VFMUXPQZKOKPOF-UHFFFAOYSA-N 0.000 description 1
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- YYEZYENJAMOWHW-UHFFFAOYSA-N 2-(2,2-dimethyl-1,3-dioxolan-4-yl)ethanol Chemical compound CC1(C)OCC(CCO)O1 YYEZYENJAMOWHW-UHFFFAOYSA-N 0.000 description 1
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 description 1
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 description 1
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- FETMDPWILVCFLL-UHFFFAOYSA-N 2-[2-(2-propan-2-yloxyethoxy)ethoxy]ethanol Chemical compound CC(C)OCCOCCOCCO FETMDPWILVCFLL-UHFFFAOYSA-N 0.000 description 1
- VNPMDUDIDCXVCH-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-3-(3-piperazin-1-ylpropyl)pyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound O=C(CN1C=C(C(CCCN2CCNCC2)=N1)C1=CN=C(NC2CC3=C(C2)C=CC=C3)N=C1)N1CCC2=C(C1)N=NN2 VNPMDUDIDCXVCH-UHFFFAOYSA-N 0.000 description 1
- APLNAFMUEHKRLM-UHFFFAOYSA-N 2-[5-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]-1-(3,4,6,7-tetrahydroimidazo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1=NN=C(O1)CC(=O)N1CC2=C(CC1)N=CN2 APLNAFMUEHKRLM-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- HCGFUIQPSOCUHI-UHFFFAOYSA-N 2-propan-2-yloxyethanol Chemical compound CC(C)OCCO HCGFUIQPSOCUHI-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- BSLDYXOPGSOQGZ-UHFFFAOYSA-N 3-(2,2-dimethyl-1,3-dioxolan-4-yl)propan-1-ol Chemical compound CC1(C)OCC(CCCO)O1 BSLDYXOPGSOQGZ-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- UVRCNEIYXSRHNT-UHFFFAOYSA-N 3-ethylpent-2-enamide Chemical compound CCC(CC)=CC(N)=O UVRCNEIYXSRHNT-UHFFFAOYSA-N 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- CRKMKGQWAGRYDY-UHFFFAOYSA-N 4-(2,2-dimethyl-1,3-dioxolan-4-yl)butan-1-ol Chemical compound CC1(C)OCC(CCCCO)O1 CRKMKGQWAGRYDY-UHFFFAOYSA-N 0.000 description 1
- DFSUTXAVEPHUPK-UHFFFAOYSA-N 4-(hydroxymethyl)-1,3-dioxolan-2-ol Chemical compound OCC1COC(O)O1 DFSUTXAVEPHUPK-UHFFFAOYSA-N 0.000 description 1
- DCVGCQPXTOSWEA-UHFFFAOYSA-N 4-[[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-1-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]pyrazol-3-yl]methyl]-1-methylpiperazin-2-one Chemical compound CN1CCN(CC2=NN(CC(=O)N3CCC4=C(C3)N=NN4)C=C2C2=CN=C(NC3CC4=C(C3)C=CC=C4)N=C2)CC1=O DCVGCQPXTOSWEA-UHFFFAOYSA-N 0.000 description 1
- ZPHQFGUXWQWWAA-UHFFFAOYSA-N 9-(2-phenylphenyl)carbazole Chemical group C1=CC=CC=C1C1=CC=CC=C1N1C2=CC=CC=C2C2=CC=CC=C21 ZPHQFGUXWQWWAA-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GSNUFIFRDBKVIE-UHFFFAOYSA-N DMF Natural products CC1=CC=C(C)O1 GSNUFIFRDBKVIE-UHFFFAOYSA-N 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 1
- 102100021792 Gamma-sarcoglycan Human genes 0.000 description 1
- 101000616435 Homo sapiens Gamma-sarcoglycan Proteins 0.000 description 1
- NEAPKZHDYMQZCB-UHFFFAOYSA-N N-[2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]ethyl]-2-oxo-3H-1,3-benzoxazole-6-carboxamide Chemical compound C1CN(CCN1CCNC(=O)C2=CC3=C(C=C2)NC(=O)O3)C4=CN=C(N=C4)NC5CC6=CC=CC=C6C5 NEAPKZHDYMQZCB-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 description 1
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000480 butynyl group Chemical group [*]C#CC([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004556 carbazol-9-yl group Chemical group C1=CC=CC=2C3=CC=CC=C3N(C12)* 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- 229940043279 diisopropylamine Drugs 0.000 description 1
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 description 1
- XHFGWHUWQXTGAT-UHFFFAOYSA-N dimethylamine hydrochloride Natural products CNC(C)C XHFGWHUWQXTGAT-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 150000008376 fluorenones Chemical class 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 229940083761 high-ceiling diuretics pyrazolone derivative Drugs 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 description 1
- MILUBEOXRNEUHS-UHFFFAOYSA-N iridium(3+) Chemical compound [Ir+3] MILUBEOXRNEUHS-UHFFFAOYSA-N 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 150000007978 oxazole derivatives Chemical class 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 150000005041 phenanthrolines Chemical class 0.000 description 1
- 150000004986 phenylenediamines Chemical class 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical class O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- RNVYQYLELCKWAN-UHFFFAOYSA-N solketal Chemical compound CC1(C)OCC(CO)O1 RNVYQYLELCKWAN-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- RKBCYCFRFCNLTO-UHFFFAOYSA-N triisopropylamine Chemical compound CC(C)N(C(C)C)C(C)C RKBCYCFRFCNLTO-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3263—Amides or imides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
본 발명에 따른 마스크 세정액 조성물은 화학식 1로 표시되는 아미드계 화합물; 및 알칼리성 화합물을 포함하는 것을 특징으로 한다.
본 발명에 따른 마스크 세정액 조성물은 NMP와 같은 환경규제물질을 포함하지 않고도 양호한 세정력을 나타내는 이점이 있다.The mask cleaning liquid composition according to the present invention includes an amide-based compound represented by Formula 1; and an alkaline compound.
The mask cleaning liquid composition according to the present invention has the advantage of exhibiting good cleaning power without containing environmentally regulated substances such as NMP.
Description
본 발명은 마스크 세정액 조성물, 구체적으로 증착 공정에서 사용되는 마스크 상의 각종 유기물, 특히 유기 파티클의 제거가 용이한 마스크 세정액 조성물에 관한 것이다.The present invention relates to a mask cleaning liquid composition, and specifically to a mask cleaning liquid composition that facilitates the removal of various organic substances, especially organic particles, on masks used in a deposition process.
평판 디스플레이(flat panel display, FPD)는 표시장치로서 주목받고 있으며, 그 중에서도 액정표시장치와 OLED(Organic Light Emitting Diode)가 관심의 대상이 되고 있다.Flat panel displays (FPDs) are attracting attention as display devices, and among them, liquid crystal displays and OLEDs (Organic Light Emitting Diodes) are attracting attention.
현재 디스플레이로서 가장 많이 사용되고 있는 액정표시장치는, 기존의 CRT (Cathode ray tube; 음극선관)에 비해 가볍고 부피가 작으며 저전력 등의 장점을 가지고 있다. 그러나 자체발광이 아니기 때문에 후면광(Backlight)을 사용하여야 하며, 액정을 사용하여 시야각이 제한을 받는 단점이 있다.Liquid crystal displays, which are currently most widely used as displays, have advantages such as lightness, small volume, and low power compared to existing CRTs (cathode ray tubes). However, since it is not self-luminous, a backlight must be used, and the viewing angle is limited due to the use of liquid crystal.
이에 비해 OLED 소자는 저전압구동, 높은 발광 효율, 넓은 시야각, 빠른 응답속도 등의 장점이 있으며, 무엇보다도 자체발광형이기 때문에 후면광 등이 필요하지 않은 장점이 있다. 이러한 OLED 소자는 자체발광을 하는 발광 유기물을 사용하여 음극과 양극으로부터 공급된 전자와 정공이 재결합되면서 발광이 일어나게 된다.In comparison, OLED devices have advantages such as low-voltage driving, high luminous efficiency, wide viewing angle, and fast response speed, and above all, because they are self-emitting, they do not require backlighting. These OLED devices use light-emitting organic materials that self-emit, and light is emitted when electrons and holes supplied from the cathode and anode are recombined.
이런 OLED와 같은 반도체 디바이스 또는 평판 디스플레이는 제조 공정 중 각종 발광층, 정공 주입층, 정공 수송층, 전자 수송층, 전자 주입층 등과 같은 유기물층을 형성하기 위하여 마스크를 이용하여 유기물의 증착을 수행하게 된다. 이때, 마스크의 표면에도 유기물이 부착되게 되며, 이렇게 부착된 유기물로 인하여 마스크로 형성된 패턴의 형상이 변형될 수 있다. 이는, 증착공정의 효율 저하를 야기하며, 제조되는 반도체 디바이스 또는 평판 디스플레이의 성능에도 영향을 미칠 수 있으므로, 마스크에 증착된 유기물을 제거해야 할 필요가 있다.During the manufacturing process of semiconductor devices such as OLED or flat panel displays, organic materials are deposited using masks to form organic material layers such as various light-emitting layers, hole injection layers, hole transport layers, electron transport layers, and electron injection layers. At this time, organic substances are also attached to the surface of the mask, and the shape of the pattern formed by the mask may be deformed due to the organic substances attached in this way. This causes a decrease in the efficiency of the deposition process and may also affect the performance of the semiconductor device or flat panel display being manufactured, so it is necessary to remove the organic material deposited on the mask.
대한민국 공개특허 제2011-0095814호는 증착 재료 세정액 조성물 및 이를 이용한 세정 방법에 관한 것으로서, N-메틸-2-피롤리돈(N-Methyl-2-pyrrolidone); 및 1,3-디메틸-2-이미다졸리디논(1,3-Dimethyl-2-imidazolidinone)을 포함하는 증착 재료 세정액 조성물에 관한 내용을 개시하고 있다.Republic of Korea Patent Publication No. 2011-0095814 relates to a deposition material cleaning liquid composition and a cleaning method using the same, including N-Methyl-2-pyrrolidone; and 1,3-dimethyl-2-imidazolidinone.
대한민국 등록특허 제1388283호는 마스크 세정장치에 관한 것으로서, 초음파를 발생시켜 세정액에 잠겨있는 마스크를 세정하는 초음파 세정부; 상기 초음파 세정부의 세정액 배출과 공급을 위한 세정액 순환부를 포함하고, 상기 초음파 세정부에서의 초음파는 주파수가 75KHz 이상 90KHz 이하이며, 세기가 800W 이상 1100W 이하이고, 상기 세정액은 NMP(N-Methyl Pyrrolidinone; N-메틸피롤리딘온) 혼합물인 것을 특징으로 하는 마스크 세정장치에 관한 내용을 개시하고 있다.Republic of Korea Patent No. 1388283 relates to a mask cleaning device, which includes an ultrasonic cleaning unit that generates ultrasonic waves to clean a mask submerged in a cleaning solution; It includes a cleaning liquid circulation unit for discharging and supplying the cleaning liquid of the ultrasonic cleaning unit, and the ultrasonic waves in the ultrasonic cleaning unit have a frequency of 75 KHz to 90 KHz, an intensity of 800 W to 1100 W, and the cleaning liquid is NMP (N-Methyl Pyrrolidinone). ; N-methylpyrrolidinone) mixture is disclosed.
그러나, 종래 마스크 세정액에 사용되던 N-메틸-2-피롤리돈(NMP)은 유독물질로서, 구체적으로 국립환경과학원 제2014-25호에 따르면 0.3 중량% 이상 함유시 유독물로 분류되는 물질이다. NMP가 포함된 마스크 세정액을 사용할 경우 인체에 유해할 뿐만 아니라 환경적인 측면에서도 좋지 않다.However, N-methyl-2-pyrrolidone (NMP), which has been used in conventional mask cleaning solutions, is a toxic substance and, specifically, according to National Institute of Environmental Research No. 2014-25, it is classified as a toxic substance when it contains more than 0.3% by weight. Using a mask cleaning solution containing NMP is not only harmful to the human body, but is also bad for the environment.
또한, 마스크 세정 공정은 제조 공정 상황에 따라 가동 시간이 결정 되는 관계로 대기 상태에서 장기 보관 후 성능 저하가 발생 하지 않아야 한다. 특히 대기 중에 노출 되는 관계로 수분 흡수에 대하여 성능 저하가 발생 하지 않아야 한다. In addition, since the operation time of the mask cleaning process is determined by the manufacturing process conditions, performance degradation should not occur after long-term storage in standby mode. In particular, there should be no degradation in performance due to moisture absorption due to exposure to the atmosphere.
한편, 전술한 발광층, 정공 주입층, 정공 수송층, 전자 수송층, 전자 주입층 등과 같은 유기물층을 형성할 때 그 성능을 개선하기 위하여 유기 파티클의 사용이 증가되고 있으나, 이러한 유기 파티클은 대부분 불용해성을 나타내기 때문에 세정이 용이하지 않은 문제가 발생하고 있다.Meanwhile, the use of organic particles is increasing to improve the performance of organic layers such as the above-mentioned light-emitting layer, hole injection layer, hole transport layer, electron transport layer, and electron injection layer. However, most of these organic particles are insoluble. There is a problem that it is not easy to clean because of the moisture.
그러므로, NMP와 같은 환경규제물질을 포함하지 않으면서도, 세정력이 우수, 특히 유기 파티클에 대한 세정력이 우수하고 수분 흡수에 따른 성능 저하가 발생하지 않으며, 공정 운전에 용이한 마스크 세정액의 개발이 요구되고 있다.Therefore, there is a need to develop a mask cleaning solution that does not contain environmentally regulated substances such as NMP, has excellent cleaning power, especially against organic particles, does not deteriorate performance due to moisture absorption, and is easy to process. there is.
본 발명의 목적은 환경규제물질을 포함하지 않고도 양호한 세정력, 특히 유기 파티클에 대하여 양호한 세정력을 나타내는 마스크 세정액 조성물을 제공하는 데 있다.The purpose of the present invention is to provide a mask cleaning liquid composition that exhibits good cleaning power, particularly good cleaning power against organic particles, without containing environmentally regulated substances.
또한, 본 발명의 목적은 초음파 및 전해 세정이 불필요하며 안정성이 우수하여 공정 운전에 용이한 세정액 조성물을 제공하는 데 있다.In addition, the purpose of the present invention is to provide a cleaning liquid composition that does not require ultrasonic and electrolytic cleaning and has excellent stability, making it easy to process.
본 발명은 하기 화학식 1로 표시되는 아미드계 화합물; 및 알칼리성 화합물을 포함하는 마스크 세정액 조성물을 제공한다.The present invention relates to an amide-based compound represented by the following formula (1); and an alkaline compound.
[화학식 1][Formula 1]
상기 화학식 1에서,In Formula 1,
R1 및 R2는 각각 독립적으로 수소, 메틸기 또는 에틸기이고,R1 and R2 are each independently hydrogen, a methyl group, or an ethyl group,
R3는 수소; 또는 C1 내지 C4의 알콕시기로 치환 또는 비치환된 C1 내지 C4의 포화 또는 C2 내지 C4의 불포화 탄화수소기이며,R3 is hydrogen; Or a C1 to C4 saturated or C2 to C4 unsaturated hydrocarbon group substituted or unsubstituted with a C1 to C4 alkoxy group,
단, R1 및 R2가 메틸기인 경우,However, when R1 and R2 are methyl groups,
R3는 C1 내지 C4의 알콕시기로 치환 또는 비치환된 C2 내지 C4의 포화 또는 불포화 탄화수소기이다.R3 is a C2 to C4 saturated or unsaturated hydrocarbon group substituted or unsubstituted with a C1 to C4 alkoxy group.
본 발명에 따른 마스크 세정액 조성물은 NMP와 같은 환경규제물질을 포함하지 않고도 양호한 세정력, 특히 유기 파티클에 대하여 양호한 세정력을 나타낼 수 있어 공정 운전에 용이한 이점이 있다.The mask cleaning liquid composition according to the present invention has the advantage of being easy to process because it can exhibit good cleaning power, especially against organic particles, without containing environmentally regulated substances such as NMP.
또한, 본 발명에 따른 마스크 세정액 조성물은 수분 흡수에 따른 성능 저하가 억제되는 이점이 있다.Additionally, the mask cleaning liquid composition according to the present invention has the advantage of suppressing performance degradation due to moisture absorption.
또한, 본 발명에 따른 마스크 세정액 조성물을 이용하여 마스크를 세정할 경우 초음파 및 전해 세정이 불필요한 이점이 있다.Additionally, when cleaning a mask using the mask cleaning liquid composition according to the present invention, there is an advantage that ultrasonic and electrolytic cleaning are not required.
이하, 본 발명에 대하여 더욱 상세히 설명한다.Hereinafter, the present invention will be described in more detail.
본 발명에서 어떤 부재가 다른 부재 "상에" 위치하고 있다고 할 때, 이는 어떤 부재가 다른 부재에 접해 있는 경우뿐 아니라 두 부재 사이에 또 다른 부재가 존재하는 경우도 포함한다.In the present invention, when a member is said to be located “on” another member, this includes not only the case where a member is in contact with another member, but also the case where another member exists between the two members.
본 발명에서 어떤 부분이 어떤 구성요소를 "포함" 한다고 할 때, 이는 특별히 반대되는 기재가 없는 한 다른 구성요소를 제외하는 것이 아니라 다른 구성요소를 더 포함할 수 있는 것을 의미한다.In the present invention, when a part "includes" a certain component, this means that it may further include other components rather than excluding other components, unless specifically stated to the contrary.
본 발명의 한 양태는, 하기 화학식 1로 표시되는 아미드계 화합물; 및 알칼리성 화합물을 포함하는 마스크 세정액 조성물에 관한 것이다.One aspect of the present invention is an amide-based compound represented by the following formula (1); and a mask cleaning liquid composition containing an alkaline compound.
[화학식 1][Formula 1]
상기 화학식 1에서,In Formula 1,
R1 및 R2는 각각 독립적으로 수소, 메틸기 또는 에틸기이고,R1 and R2 are each independently hydrogen, a methyl group, or an ethyl group,
R3는 수소; 또는 C1 내지 C4의 알콕시기로 치환 또는 비치환된 C1 내지 C4의 포화 또는 C2 내지 C4의 불포화 탄화수소기이며,R3 is hydrogen; Or a C1 to C4 saturated or C2 to C4 unsaturated hydrocarbon group substituted or unsubstituted with a C1 to C4 alkoxy group,
단, R1 및 R2가 메틸기인 경우,However, when R1 and R2 are methyl groups,
R3는 C1 내지 C4의 알콕시기로 치환 또는 비치환된 C2 내지 C4의 포화 또는 불포화 탄화수소기이다.R3 is a C2 to C4 saturated or unsaturated hydrocarbon group substituted or unsubstituted with a C1 to C4 alkoxy group.
본 발명에서 알콕시기는 직쇄, 분지쇄 또는 고리쇄일 수 있다. 알콕시기의 탄소수는 특별히 한정되지 않으나, 탄소수 1 내지 4인 것이 바람직하다. 구체적으로, 메톡시, 에톡시, n-프로폭시, 이소프로폭시, n-부톡시, 이소부톡시, tert-부톡시, sec-부톡시 등이 될 수 있으나, 이에 한정되는 것은 아니다.In the present invention, the alkoxy group may be straight chain, branched chain, or ring chain. The number of carbon atoms of the alkoxy group is not particularly limited, but is preferably 1 to 4 carbon atoms. Specifically, it may be methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, isobutoxy, tert-butoxy, sec-butoxy, etc., but is not limited thereto.
본 발명에서 포화 탄화수소기는 상기 탄소수를 만족하는 직쇄 또는 분지쇄 및 환상의 어느 것일 수 있다. In the present invention, the saturated hydrocarbon group may be any of the straight chain, branched chain, and cyclic groups that satisfy the above carbon number.
상기 직쇄 또는 분지쇄의 포화 탄화수소기로는, 메틸기, 에틸기, 프로필기, 부틸기 등의 직쇄상 알킬기; 이소프로필기, 이소부틸기 등의 분지쇄상 알킬기 등을 들 수 있다. 상기 포화 탄화수소기는 바람직하게는 탄소수 1 내지 4이며, 더욱 바람직하게는 탄소수 1 내지 3이다. 단, R1 및 R2가 모두 메틸기인 경우, 상기 포화 탄화수소기의 탄소수는 2 내지 4이다.Examples of the straight-chain or branched saturated hydrocarbon groups include straight-chain alkyl groups such as methyl, ethyl, propyl, and butyl groups; and branched alkyl groups such as isopropyl group and isobutyl group. The saturated hydrocarbon group preferably has 1 to 4 carbon atoms, and more preferably has 1 to 3 carbon atoms. However, when both R1 and R2 are methyl groups, the saturated hydrocarbon group has 2 to 4 carbon atoms.
상기 환상의 포화 탄화수소기로는 시클로프로필기, 시클로부틸기 등을 들 수 있다.Examples of the cyclic saturated hydrocarbon group include cyclopropyl group and cyclobutyl group.
본 발명에서 불포화 탄화수소기는 말단에 불포화기를 갖는 것으로, 탄소수 2 내지 4의 직쇄형 지방족 불포화 탄화수소기, 분지쇄형 지방족 탄화수소기일 수 있다. 상기 직쇄형 지방족 불포화 탄화수소기는 예컨대 비닐기, 프로페닐기(알릴기), 부티닐기 등을 들 수 있으며, 상기 분지쇄형 불포화 탄화수소기로는 예컨대, 1-메틸프로페닐기, 2-메틸프로페닐기 등을 들 수 있으나 이에 한정되지는 않는다.In the present invention, the unsaturated hydrocarbon group has an unsaturated group at the terminal, and may be a straight-chain aliphatic unsaturated hydrocarbon group or a branched-chain aliphatic hydrocarbon group having 2 to 4 carbon atoms. Examples of the straight-chain aliphatic unsaturated hydrocarbon group include vinyl group, propenyl group (allyl group), and butynyl group, and examples of the branched-chain unsaturated hydrocarbon group include 1-methylpropenyl group and 2-methylpropenyl group. However, it is not limited to this.
본 발명의 일 실시형태에 있어서, 상기 화학식 1로 표시되는 아미드계 화합물은 N,N-디메틸프로피온아미드, N,N-디메틸이소부틸아미드, N,N-디메틸아크릴아미드, N,N-디메틸메타크릴아미드, N-에틸포름아미드, N,N-디에틸포름아미드, N,N-디에틸아세트아미드, N,N-디에틸프로피온아미드, N,N-디에틸이소부틸아미드, N,N-디에틸아크릴아미드, N,N-디에틸메타크릴아미드, 3-메톡시-N,N-디메틸프로피온아미드 및 3-부톡시-N,N-디메틸프로피온아미드로 이루어진 군에서 선택되는 1 이상일 수 있다.In one embodiment of the present invention, the amide-based compound represented by Formula 1 is N,N-dimethylpropionamide, N,N-dimethylisobutylamide, N,N-dimethylacrylamide, N,N-dimethylmeta Crylamide, N-ethylformamide, N,N-diethylformamide, N,N-diethylacetamide, N,N-diethylpropionamide, N,N-diethylisobutylamide, N,N- It may be one or more selected from the group consisting of diethylacrylamide, N,N-diethylmethacrylamide, 3-methoxy-N,N-dimethylpropionamide, and 3-butoxy-N,N-dimethylpropionamide. .
본 발명에 따른 마스크 세정액 조성물은 상기 화학식 1로 표시되는 아미드계 화합물을 포함하기 때문에 마스크 세정력이 우수하고, 마스크, 예컨대 마스크를 이루고 있는 SUS, Invar 등의 물질에는 데미지를 입히지 않는 이점이 있으며, NMP와 같은 환경유해물질 대신 이용될 수 있기 때문에 환경적인 측면에서도 우수하고 공정적인 측면에서도 용이한 이점이 있다. 구체적으로, 본 발명에 따른 마스크 세정액 조성물은 유기발광소자의 패턴 형성에 사용되는 Invar 재질의 마스크 및 상기 마스크를 지지하는 스테인레스(SUS 304, 316, 420 등) 기재 등에 부식 등과 같은 데미지를 주지 않는 이점이 있다.Since the mask cleaning liquid composition according to the present invention contains the amide-based compound represented by Formula 1, it has excellent mask cleaning power and has the advantage of not damaging the mask, such as materials such as SUS and Invar, which make up the mask, and NMP Since it can be used in place of environmentally hazardous substances such as Specifically, the mask cleaning liquid composition according to the present invention has the advantage of not causing damage such as corrosion to the Invar material mask used to form the pattern of the organic light emitting device and the stainless steel (SUS 304, 316, 420, etc.) substrate supporting the mask. There is.
상기 화학식 1로 표시되는 아미드계 화합물은 상기 마스크 세정액 조성물 전체 100 중량부에 대하여 50 내지 99.9 중량부, 바람직하게는 60 내지 98 중량부, 더욱 바람직하게는 75 내지 95 중량부로 포함될 수 있으며, 이 경우 유기 발광물질에 대한 용해력 및 세정성이 우수한 이점이 있다.The amide-based compound represented by Formula 1 may be included in an amount of 50 to 99.9 parts by weight, preferably 60 to 98 parts by weight, and more preferably 75 to 95 parts by weight, based on 100 parts by weight of the mask cleaning liquid composition. In this case, It has the advantage of excellent dissolution and cleaning properties for organic light-emitting materials.
요컨대, 본 발명에 따른 마스크 세정액 조성물은 상기 마스크에 부착되어 있는 각종 유기 물질에 대한 세정력이 우수하다.In short, the mask cleaning liquid composition according to the present invention has excellent cleaning power against various organic substances attached to the mask.
상기 유기 물질은 예컨대, 적색, 녹색 및/또는 청색을 발광하는 발광층, 정공수송층(HTL), 정공주입층(HIL) 등을 이루는 물질일 수 있다. 상기 발광층은 적색, 녹색 및/또는 청색을 발광할 수 있으며 인광 물질 또는 형광 물질로 이루어질 수 있다. 이때 상기 발광 호스트 재료로는 CBP((carbazole-9-yl)biphenyl), BSBF(2-(9,9-Spirobifluoren-2-yl)-9,9-spirobifluorene), biphenyl-3,3'-diyl)bis(diphenylphosphine oxide) (BiPh-m-BiDPO), 또는 mCP(1,3-bis(carbazol-9-yl)이 사용될 수 있으나, 이에만 한정된 것은 아니다.The organic material may be, for example, a material that forms a light emitting layer that emits red, green, and/or blue light, a hole transport layer (HTL), and a hole injection layer (HIL). The light-emitting layer may emit red, green, and/or blue light and may be made of a phosphorescent material or a fluorescent material. At this time, the light-emitting host material includes CBP ((carbazole-9-yl)biphenyl), BSBF (2-(9,9-Spirobifluoren-2-yl)-9,9-spirobifluorene), and biphenyl-3,3'-diyl. )bis(diphenylphosphine oxide) (BiPh-m-BiDPO), or mCP(1,3-bis(carbazol-9-yl)) may be used, but is not limited thereto.
적색 발광 도펀트로는 PIQIr(acac)(bis(1-phenylisoquinoline)acetylacetonate iridium), PQIr(acac)(bis(1-phenylquinoline)acetylacetonate iridium), PQIr(tris(1-phenylquinoline)iridium), PtOEP(octaethylporphyrin platinum)와 같은 인광 물질이나, Alq3(tris-(8-hydroxyquinoline)aluminum)와 같은 형광 물질 등이 사용될 수 있다.Red light-emitting dopants include PIQIr(acac)(bis(1-phenylsoquinoline)acetylacetonate iridium), PQIr(acac)(bis(1-phenylquinoline)acetylacetonate iridium), PQIr(tris(1-phenylquinoline)iridium), and PtOEP(octaethylporphyrin platinum). ) or a fluorescent material such as Alq3 (tris-(8-hydroxyquinoline)aluminum) may be used.
녹색 발광 도펀트로는 Ir(ppy)3(fac tris(2-phenylpyridine)iridium)와 같은 인광 물질이나, Alq3(tris-(8-hydroxyquinoline)aluminum)와 같은 형광 물질이 사용될 수 있으나, 이에만 한정된 것은 아니다. As a green light-emitting dopant, a phosphorescent material such as Ir(ppy) 3 (fac tris(2-phenylpyridine)iridium) or a fluorescent material such as Alq3 (tris-(8-hydroxyquinoline)aluminum) can be used, but it is not limited to these. no.
청색 발광 도펀트로는 (4,6-F2ppy)2Irpic와 같은 인광 물질이나, spiro-DPVBi, spiro-6P, 디스틸벤젠(DSB), 디스트릴아릴렌(DSA), PFO계 고분자, PPV계 고분자와 같은 형광 물질이 사용될 수 있으나, 이에만 한정된 것은 아니다.Blue-emitting dopants include phosphorescent materials such as (4,6-F 2 ppy) 2 Irpic, spiro-DPVBi, spiro-6P, distylbenzene (DSB), distrylarylene (DSA), PFO-based polymers, and PPV. Fluorescent materials such as polymer-based materials may be used, but are not limited to this.
정공수송층은 NPD(N,N'-Di(1-naphthyl)-N,N′'-diphenyl-(1,1'-biphenyl)-4,4'-diamine), TPD(N,N'-bis-(3-methylphenyl)-N,N'-bis-(phenyl)-benzidine), s-TAD 및 MTDATA(4,4',4"- Tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine)로 이루어진 군에서 선택된 어느 하나 이상으로 이루어질 수 있으나 이에 한정되지 않는다. 예컨대 정공수송층 재료로서 트라이아졸 유도체, 옥사다이아졸 유도체, 이미다졸 유도체, 폴리아릴알케인 유도체, 피라졸린 유도체 및 피라졸론 유도체, 페닐렌다이아민 유도체, 아릴아민 유도체, 아미노 치환 칼콘 유도체, 옥사졸 유도체, 스타이릴안트라센 유도체, 플루오렌온 유도체, 하이드라존 유도체, 스틸벤 유도체, 실라제인 유도체, 폴리실레인계, 아닐린계 공중합체, 도전성 고분자 올리고머(특히 싸이오펜 올리고머) 등을 들 수 있다.The hole transport layer is NPD(N,N'-Di(1-naphthyl)-N,N′'-diphenyl-(1,1'-biphenyl)-4,4'-diamine), TPD(N,N'-bis -(3-methylphenyl)-N,N'-bis-(phenyl)-benzidine), s-TAD and MTDATA(4,4',4"- Tris(N-3-methylphenyl-N-phenyl-amino)- (triphenylamine), but is not limited thereto. For example, hole transport layer materials include triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, and pyrazolone derivatives. , phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, silazene derivatives, polysilane-based, aniline-based covalent Examples include polymers and conductive polymer oligomers (particularly thiophene oligomers).
또한, 그 외에도 정공저지층에 포함되는 옥사디졸 유도체나 트리아졸 유도체, 페난트롤린 유도체, BCP(2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), 3-(6-diphenylphosphinylnaphth-2-yl)-1,10-phenanthroline (Phen-m-PhDPO), 알루미늄 착물 등을 사용할 수 있으며, 정공 주입층의 재료로서 CuPc(copper phthalocyanine), PEDOT(poly(3,4)-ethylenedioxythiophene), PANI(polyaniline) 및 NPD로 이루어진 군에서 선택되는 1 이상, 보호층(capping layer, CPL)의 재료로서 Bis[2-(2-pyridinyl-N)phenyl-C](2,4-pentanedionato-O2,O4)iridium(III) 등이 사용될 수 있다.In addition, oxadisol derivatives, triazole derivatives, phenanthroline derivatives, BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), 3-(6-diphenylphosphinylnaphth) contained in the hole blocking layer. -2-yl)-1,10-phenanthroline (Phen-m-PhDPO), aluminum complex, etc. can be used, and as materials for the hole injection layer, CuPc (copper phthalocyanine), PEDOT (poly(3,4)-ethylenedioxythiophene) , one or more selected from the group consisting of PANI (polyaniline) and NPD, Bis[2-(2-pyridinyl-N)phenyl-C](2,4-pentanedionato-O2) as a material for the protective layer (capping layer, CPL) ,O4)iridium(III), etc. can be used.
본 발명에 따른 마스크 세정액 조성물은 알칼리성 화합물을 포함하며, 본 발명에 따른 마스크 세정액 조성물은 전술한 아미드계 화합물과 알칼리성 화합물을 함께 포함하기 때문에 마스크에 부착되어 있는 각종 유기물질, 특히 유기 파티클 형태의 불용해성 유기물질의 세정이 용이한 이점이 있다.The mask cleaning liquid composition according to the present invention contains an alkaline compound, and since the mask cleaning liquid composition according to the present invention contains both the amide-based compound and the alkaline compound described above, various organic substances attached to the mask, especially fire in the form of organic particles, are removed. There is an advantage that soluble organic substances can be easily cleaned.
이론에 제한되는 것을 바라지는 않으나, 상기 알칼리성 화합물은 용액 내에서 pH를 상승시켜 흡착되어 있는 유기 물질을 리프트 오프(Lift off)하는 작용을 수행하기 때문에 메탈 컴플렉스(complex) 형태를 띠는 불용해성의 유기 물질, 예컨대 Bis[2-(2-pyridinyl-N)phenyl-C](2,4-pentanedionato-O2,O4)iridium(III), Poly(9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine)과 같은 불용해성 유기 물질의 세정이 용이해진다. Without wishing to be limited by theory, the alkaline compound raises the pH in the solution and lifts off the adsorbed organic substances, so it is an insoluble substance in the form of a metal complex. Organic materials such as Bis[2-(2-pyridinyl-N)phenyl-C](2,4-pentanedionato-O2,O4)iridium(III), Poly(9,9-dioctylfluorene-alt-N-(4- Cleaning of insoluble organic substances such as sec-butylphenyl)-diphenylamine) becomes easier.
본 발명의 또 다른 실시형태에 있어서, 상기 알칼리성 화합물은 무기 염기 및 유기 염기로 이루어진 군에서 선택되는 1 이상을 포함할 수 있다.In another embodiment of the present invention, the alkaline compound may include one or more selected from the group consisting of inorganic bases and organic bases.
상기 무기 염기는 예컨대, 수산화암모늄, 수산화나트륨, 수산화 칼륨 등을 들 수 있으나 이에 한정되지는 않으며, 본 발명의 목적을 저해하지 않는다면 당업계에서 통상적으로 사용하는 무기 염기를 제한 없이 사용할 수 있다.The inorganic base may include, but is not limited to, ammonium hydroxide, sodium hydroxide, potassium hydroxide, etc., and any inorganic base commonly used in the art may be used without limitation as long as it does not impair the purpose of the present invention.
상기 유기 염기는 예컨대, 메틸 아민, 에틸아민, 이소프로필 아민, 모노이소프로필아민 등의 1급 아민; 디에틸 아민, 디이소프로필 아민, 디부틸아민 등의 2급 아민; 트리메틸아민, 트리에틸아민, 트리이소프로필아민, 트리부틸아민 등의 3급 아민; 테트라메틸암모늄 히드록시드, 테트라에틸암모늄 히드록시드, 테트라프로필암모늄 히드록시드, 테트라부틸암모늄 히드록시드 등의 4급 아민; 콜린, 모노에탄올아민, 디에탄올 아민, ２-아미노 에탄올, ２-(에틸 아미노) 에탄올, ２-(메틸 아미노) 에탄올, Ｎ-메틸 디에탄올 아민, 디메틸아미노에탄올, 디에틸아미노에탄올, 니트릴로트리에탄올, ２-(２-아미노 에톡시) 에탄올, １-아미노-２-프로판올, 트리에탄올아민, 모노프로판올아민, 디부탄올아민등의 알칸올아민 등이 있으며, 이들을 단독으로 또는 2개 이상 혼합하여 사용할 수 있다.The organic base includes, for example, primary amines such as methyl amine, ethylamine, isopropyl amine, and monoisopropylamine; secondary amines such as diethyl amine, diisopropyl amine, and dibutylamine; Tertiary amines such as trimethylamine, triethylamine, triisopropylamine, and tributylamine; Quaternary amines such as tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, and tetrabutylammonium hydroxide; Choline, monoethanolamine, diethanolamine, 2-aminoethanol, 2-(ethylamino)ethanol, 2-(methylamino)ethanol, N-methyldiethanolamine, dimethylaminoethanol, diethylaminoethanol, nitrilotriethanol , 2-(2-amino ethoxy)ethanol, 1-amino-2-propanol, triethanolamine, monopropanolamine, dibutanolamine, etc., and these can be used alone or in combination of two or more. there is.
본 발명의 또 다른 실시형태에 있어서, 상기 유기 염기는 아민계 화합물을 포함할 수 있다. 구체적으로, 유기물과 무기물을 포함하는 불용해성 발광 파티클을 세정하는 경우, 세정을 완료한 이후의 재흡착 현상을 방지하기 위하여 하이드록시기를 가지는 아민계 화합물을 사용하는 것이 바람직하다.In another embodiment of the present invention, the organic base may include an amine-based compound. Specifically, when cleaning insoluble luminescent particles containing organic and inorganic substances, it is preferable to use an amine-based compound having a hydroxy group to prevent re-adsorption after cleaning is completed.
본 발명의 또 다른 실시형태에 있어서, 상기 알칼리성 화합물은 상기 마스크 세정액 조성물 전체 100 중량부에 대하여 0.05 내지 10 중량부, 바람직하게는 1 내지 7 중량부로 포함될 수 있다. 이 경우, 불용해성 유기 파티클의 제거성이 극대화되는 이점이 있어 바람직하며, 상대적으로 아미드계 화합물의 함량이 감소함으로써 유기 발광물질에 대한 용해력과 세정력이 저하되는 현상을 억제할 수 있다.In another embodiment of the present invention, the alkaline compound may be included in an amount of 0.05 to 10 parts by weight, preferably 1 to 7 parts by weight, based on 100 parts by weight of the mask cleaning liquid composition. In this case, it is desirable because it has the advantage of maximizing the removal of insoluble organic particles, and by relatively reducing the content of the amide-based compound, it is possible to suppress the phenomenon of deterioration in dissolving power and cleaning power for organic light-emitting materials.
본 발명의 또 다른 실시형태에 있어서, 상기 마스크 세정액 조성물은 수용성 극성용매를 더 포함할 수 있다.In another embodiment of the present invention, the mask cleaning liquid composition may further include a water-soluble polar solvent.
본 발명의 또 다른 실시형태에 있어서, 상기 수용성 극성용매는 양자성 극성용매 및 비양자성 극성용매로 이루어진 군에서 선택되는 1 이상을 포함할 수 있다.In another embodiment of the present invention, the water-soluble polar solvent may include at least one selected from the group consisting of a protic polar solvent and an aprotic polar solvent.
구체적으로, 본 발명에 따른 수용성 극성용매는 양자성 극성용매와 비양자성 극성용매를 들 수 있으며, 이들을 각각 단독으로 또는 혼합하여 사용할 수 있다.Specifically, water-soluble polar solvents according to the present invention include protic polar solvents and aprotic polar solvents, and these can be used alone or in combination.
상기 양자성 극성용매는 예컨대 에틸렌글리콜 모노메틸 에테르, 에틸렌글리콜 모노에틸 에테르, 에틸렌글리콜 모노이소프로필 에테르, 에틸렌글리콜 모노부틸 에테르, 디에틸렌글리콜 모노메틸 에테르, 디에틸렌글리콜 모노에틸 에테르, 디에틸렌글리콜 모노이소프로필 에테르, 디에틸렌글리콜 모노부틸 에테르, 트리에틸렌글리콜 모노메틸 에테르, 트리에틸렌글리콜 모노에틸 에테르, 트리에틸렌글리콜 모노이소프로필 에테르, 트리에틸렌글리콜 모노부틸 에테르, 폴리에틸렌글리콜 모노메틸 에테르, 폴리에틸렌글리콜 모노부틸 에테르, 프로필렌글리콜 모노메틸 에테르, 디프로필렌글리콜 모노메틸 에테르, 트리프로필렌글리콜 모노메틸 에테르 등의 알킬렌글리콜 모노알킬 에테르; 및 테트라하이드로퍼푸릴 알코올; 등을 들 수 있으며, 4-하이드록시메틸-1,3-디옥솔란, 4-하이드록시메틸-2,2-디메틸-1,3-디옥솔란, 4-하이드록시에틸-2,2-디메틸-1,3-디옥솔란, 4-하이드록시프로필-2,2-디메틸-1,3-디옥솔란, 4-하이드록시부틸-2,2-디메틸-1,3-디옥솔란, 4-하이드록시메틸-2,2-디에틸-1,3-디옥솔란, 4-하이드록시메틸-2-메틸-2-에틸-1,3-디옥솔란 등의 하이드록시 디옥솔란계 화합물;을 들 수 있으며 이들은 1종 단독으로 또는 2종 이상이 함께 사용될 수 있으나, 이에 한정되지는 않으며, 본 발명의 목적을 저해하지 않는 양자성 극성용매를 사용할 수 있다.The protic polar solvent is, for example, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol mono. Isopropyl ether, Diethylene glycol monobutyl ether, Triethylene glycol monomethyl ether, Triethylene glycol monoethyl ether, Triethylene glycol monoisopropyl ether, Triethylene glycol monobutyl ether, Polyethylene glycol monomethyl ether, Polyethylene glycol monobutyl Alkylene glycol monoalkyl ethers such as ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, and tripropylene glycol monomethyl ether; and tetrahydrofurfuryl alcohol; Examples include 4-hydroxymethyl-1,3-dioxolane, 4-hydroxymethyl-2,2-dimethyl-1,3-dioxolane, 4-hydroxyethyl-2,2-dimethyl- 1,3-dioxolane, 4-hydroxypropyl-2,2-dimethyl-1,3-dioxolane, 4-hydroxybutyl-2,2-dimethyl-1,3-dioxolane, 4-hydroxymethyl -hydroxydioxolane-based compounds such as -2,2-diethyl-1,3-dioxolane, 4-hydroxymethyl-2-methyl-2-ethyl-1,3-dioxolane, and these include 1 Each species may be used alone or two or more species may be used together, but the solvent is not limited thereto, and a protic polar solvent that does not impede the purpose of the present invention may be used.
상기 비양자성 극성용매는 예컨대 N,N-디메틸프로피온아미드(DMPA), N,N-디메틸이소부틸아미드(DMIB), N,N-디메틸아크릴아미드(DMAR), N,N-디메틸메타크릴아미드, N,N-디에틸포름아미드, N,N-디에틸아세트아미드(DEAC), N,N-디에틸프로피온아미드, N,N-디에틸이소부틸아미드, N,N-디에틸아크릴아미드, N,N-디에틸메타크릴아미드, 3-메톡시-N,N-디메틸프로피온아미드(MDMP) 및 3-부톡시-N,N-디메틸프로피온아미드, N,N-디에틸포름아미드(DEF), N,N-디메틸포름아미드(DMF) 등의 디알킬아미드계 화합물; N-메틸포름아미드(NMF), N-메틸프로피온아미드(NMPA), N-메틸아세트아미드(NMA), N-에틸아세트아미드(NEA), N-(2-히드록시에틸)아세트아미드 등의 모노아미드계 화합물; γ―부티로락톤 등의 락톤 화합물; 디메틸술폭사이드(DMSO), 술폴란 등의 설폭사이드 화합물; 트리에틸포스페이트(TEP), 트리부틸포스페이트(TBP) 등의 포스페이트 화합물; 디메틸카보네이트(DMC), 에틸렌카보네이트(EC), 프로필렌카보네이트(PC) 등의 카보네이트 화합물을 들 수 있으며, 이들은 단독으로 또는 2종 이상을 혼합하여 사용할 수 있으나, 역시 이에 한정되지 않는다.The aprotic polar solvent is, for example, N,N-dimethylpropionamide (DMPA), N,N-dimethylisobutylamide (DMIB), N,N-dimethylacrylamide (DMAR), N,N-dimethylmethacrylamide, N,N-diethylformamide, N,N-diethylacetamide (DEAC), N,N-diethylpropionamide, N,N-diethylisobutylamide, N,N-diethylacrylamide, N ,N-diethylmethacrylamide, 3-methoxy-N,N-dimethylpropionamide (MDMP) and 3-butoxy-N,N-dimethylpropionamide, N,N-diethylformamide (DEF), dialkylamide-based compounds such as N,N-dimethylformamide (DMF); Monomers such as N-methylformamide (NMF), N-methylpropionamide (NMPA), N-methylacetamide (NMA), N-ethylacetamide (NEA), and N-(2-hydroxyethyl)acetamide Amide-based compounds; Lactone compounds such as γ-butyrolactone; Sulfoxide compounds such as dimethyl sulfoxide (DMSO) and sulfolane; Phosphate compounds such as triethyl phosphate (TEP) and tributyl phosphate (TBP); Carbonate compounds such as dimethyl carbonate (DMC), ethylene carbonate (EC), and propylene carbonate (PC) may be used, and these may be used alone or in combination of two or more, but are not limited thereto.
바람직하게는, 디알킬아미드계 화합물, 모노아미드계 화합물과 같은 아미드계 화합물, 더욱 바람직하게는 디알킬아미드계 화합물을 사용하는 것이, 세정성 측면에서 좋다.Preferably, an amide-based compound such as a dialkylamide-based compound or a monoamide-based compound is used, and more preferably, a dialkylamide-based compound is used in terms of cleanability.
상기 수용성 극성용매는 상기 화학식 1로 표시되는 아미드계 화합물, 알칼리성 화합물과 함께 마스크에 잔류하는 유기소재를 용해 시키는 역할을 수행하며, 또한 세정 후 탈이온수의 린스 과정에서 물에 의한 세정액 제거를 수월하게 하여 제거된 유기소재의 재흡착/재부착을 최소화하거나 특정 유기소재의 제거력 향상에 구현할 수 있는 역할을 수행할 수 있다.The water-soluble polar solvent serves to dissolve the organic material remaining in the mask along with the amide-based compound and alkaline compound represented by Formula 1, and also makes it easier to remove the cleaning solution with water during the rinsing process with deionized water after cleaning. This can play a role in minimizing re-adsorption/re-attachment of removed organic materials or improving the removal power of specific organic materials.
상기 수용성 극성용매는 추후 세정 공정에서 요구되는 성능에 따라 선택될 수 있으며, 상기 수용성 극성용매는 적당한 세정력 및 공정의 안정적 운영을 위해 비점이 낮지 않은 것이 바람직하다. 예컨대 150 내지 290 ℃의 비점을 가지는 것이 바람직하다. 상기 범위 내의 비점을 가지는 수용성 극성 용매를 사용하는 경우 환경적, 공정적인 측면에서 바람직할 수 있다. 구체적으로, 세정 공정에서 휘발되어 공정 사용량이 많아 지고, 작업 환경에 악영향을 미치는 현상을 억제할 수 있으므로 바람직하다.The water-soluble polar solvent may be selected depending on the performance required in the subsequent cleaning process, and the water-soluble polar solvent preferably has a boiling point that is not low for adequate cleaning power and stable operation of the process. For example, it is desirable to have a boiling point of 150 to 290°C. When using a water-soluble polar solvent having a boiling point within the above range, it may be preferable from environmental and process perspectives. Specifically, it is desirable because it can suppress the phenomenon of volatilization in the cleaning process, which increases process usage and adversely affects the working environment.
본 발명의 또 다른 실시형태에 있어서, 상기 수용성 극성용매는 상기 세정액 조성물 전체 100 중량부에 대하여 5 내지 35 중량부, 바람직하게는 5 내지 30 중량부, 더욱 바람직하게는 10 내지 20 중량부로 포함될 수 있다. 상기 수용성 극성용매가 상기 범위 내로 포함되는 경우, 세정력이 우수하면서도 세정 후 탈이온수의 린스 과정에서 물에 의한 세정액 제거가 용이한 세정액 조성물을 제조할 수 있는 이점이 있으므로 바람직하다.In another embodiment of the present invention, the water-soluble polar solvent may be included in an amount of 5 to 35 parts by weight, preferably 5 to 30 parts by weight, and more preferably 10 to 20 parts by weight, based on 100 parts by weight of the total cleaning liquid composition. there is. When the water-soluble polar solvent is included within the above range, it is preferable because it has the advantage of producing a cleaning solution composition that has excellent cleaning power and is easy to remove the cleaning solution with water during the rinsing process with deionized water after cleaning.
본 발명의 또 다른 실시형태에 있어서, 상기 마스크 세정액 조성물은 전체 100 중량부에 대하여 물을 5 중량부 이하로 포함할 수 있다.In another embodiment of the present invention, the mask cleaning liquid composition may contain 5 parts by weight or less of water based on a total of 100 parts by weight.
상기 물은 상기 마스크 세정액 조성물 전체 100 중량부에 대하여 바람직하게는 3 중량부 이하로 포함될 수 있다.The water may preferably be included in an amount of 3 parts by weight or less based on 100 parts by weight of the total mask cleaning liquid composition.
상기 물이 상기 범위 이하로 포함되는 경우 유기 EL(Organic Electro Luminescence)의 제거력 저하를 야기하지 않아 바람직하다.When the water is contained below the above range, it is preferable because it does not cause a decrease in the removal power of organic electro luminescence (EL).
상기 물은 불순물을 최대한 저감시킨 탈이온수(deionized water, DIW) 또는 초순수(ultrapure water)일 수 있으나, 이에 한정되지 않는다.The water may be deionized water (DIW) or ultrapure water with impurities reduced as much as possible, but is not limited thereto.
또한, 상기 물은 시간이 지남에 따라 수분을 흡수함으로써 포함될 수도 있지만, 본 발명에 따른 세정액 조성물은 물을 함유하지 않는 것이 바람직하다.Additionally, the water may be included by absorbing moisture over time, but it is preferable that the cleaning liquid composition according to the present invention does not contain water.
본 발명에 따른 세정액 조성물은 상기 화학식 1로 표시되는 아미드계 화합물 및 알칼리성 화합물을 포함하여 우수한 세정력을 가지기 때문에 초음파 및 전해 세정 등이 불필요한 이점이 있다.The cleaning liquid composition according to the present invention contains an amide-based compound and an alkaline compound represented by Formula 1 and has excellent cleaning power, so it has the advantage of eliminating the need for ultrasonic and electrolytic cleaning.
본 발명의 또 다른 실시형태에 있어서, 상기 마스크 세정액 조성물은 유기 소재 진공 증착 공정에 사용되는 마스크를 세정하는 마스크 세정액 조성물일 수 있다.In another embodiment of the present invention, the mask cleaning liquid composition may be a mask cleaning liquid composition for cleaning a mask used in an organic material vacuum deposition process.
본 발명에 따른 마스크 세정액 조성물은 NMP, DMF, DMAC, NMF와 같은 환경규제물질을 포함하지 않으면서도 세정력이 우수한 이점이 있다.The mask cleaning liquid composition according to the present invention has the advantage of excellent cleaning power without containing environmentally regulated substances such as NMP, DMF, DMAC, and NMF.
이하, 본 명세서를 구체적으로 설명하기 위해 실시예를 들어 상세히 설명한다. 그러나, 본 명세서에 따른 실시예들은 여러 가지 다른 형태로 변형될 수 있으며, 본 명세서의 범위가 아래에서 상술하는 실시예들에 한정되는 것으로 해석되지는 않는다. 본 명세서의 실시예들은 당업계에서 평균적인 지식을 가진 자에게 본 명세서를 보다 완전하게 설명하기 위해 제공되는 것이다. 또한, 이하에서 함유량을 나타내는 "%" 및 "부"는 특별히 언급하지 않는 한 중량 기준이다.Hereinafter, examples will be given in detail to explain the present specification in detail. However, the embodiments according to the present specification may be modified into various other forms, and the scope of the present specification is not to be construed as being limited to the embodiments described in detail below. The embodiments of this specification are provided to more completely explain the present specification to those with average knowledge in the art. In addition, "%" and "part" indicating content below are based on weight, unless otherwise specified.
실시예Example 및 and 비교예Comparative example : 세정액 조성물의 제조: Preparation of cleaning liquid composition
하기 표 1의 구성 및 조성에 따라 실시예 및 비교예에 따른 세정액 조성물을 제조하였다.Cleaning liquid compositions according to Examples and Comparative Examples were prepared according to the composition and composition in Table 1 below.
실험예Experiment example 1: 유기발광소자 용해성 평가 1: Evaluation of organic light emitting device solubility
실시예 및 비교예에 따른 마스크 세정액 조성물의 세정 효과를 확인하기 위하여 통상적인 증착 공정에 따라 유기발광소자에 포함되는 발광층 및 전자/정공 수송층으로 사용되는 유기 소재가 각각 별도로 흡착된 4종의 마스크(재질: Invar)에 대한 용해성 평가를 실시하였다.In order to confirm the cleaning effect of the mask cleaning liquid composition according to the Examples and Comparative Examples, four types of masks ( Material: Invar) was evaluated for solubility.
증착 공정 후 마스크로부터 유기소재를 분리한 후, 막자 사발을 이용하여 파우더 형태를 만들고, 224㎛ 체로 분리하였다. 제조한 마스크 세정액 조성물의 중량으로 0.015%의 유기소재를 50ml 비커를 사용하여 상온에서 파우더를 녹인 후 실시예 및 비교예 에 따른 마스크 세정액 조성물(약액)의 용해성(파우더 녹는 속도, 분단위 측정)을 평가 하여 하기 표 2에 나타내었다.After the deposition process, the organic material was separated from the mask, then powdered using a mortar and pestle and separated through a 224㎛ sieve. After dissolving the powder of 0.015% of the organic material by weight of the prepared mask cleaning solution composition at room temperature using a 50 ml beaker, the solubility (powder melting speed, measured in minutes) of the mask cleaning solution composition (chemical solution) according to the Examples and Comparative Examples was measured. The evaluation is shown in Table 2 below.
Mask 2 흡착 물질: biphenyl-3,3'-diyl)bis(diphenylphosphine oxide) (BiPh-m-BiDPO)
Mask 3 흡착 물질: 3-(6-diphenylphosphinylnaphth-2-yl)-1,10-phenanthroline (Phen-m-PhDPO)
Mask 4 흡착 물질: Bis[2-(2-pyridinyl-N)phenyl-C](2,4-pentanedionato-O2,O4)iridium(III)Mask 1 adsorption material: 2-(9,9-Spirobifluoren-2-yl)-9,9-spirobifluorene(BSBF)
Mask 2 Adsorption material: biphenyl-3,3'-diyl)bis(diphenylphosphine oxide) (BiPh-m-BiDPO)
Mask 3 Adsorption material: 3-(6-diphenylphosphinylnaphth-2-yl)-1,10-phenanthroline (Phen-m-PhDPO)
Mask 4 Adsorption material: Bis[2-(2-pyridinyl-N)phenyl-C](2,4-pentanedionato-O2,O4)iridium(III)
실험예Experiment example 2: 세정액의 유기 2: Organic of cleaning liquid 파티클particle 제거성removability 평가 evaluation
실시예 및 비교예에 따른 마스크 세정액 조성물의 세정 효과를 확인하기 위하여 통상적인 증착 공정에 따라 유기발광소자에 포함되는 발광층 및 전자/정공 수송층으로 사용되는 유기 소재가 각각 별도로 흡착된 4종의 마스크(재질: Invar)에 대한 세정액의 유기 파티클 제거성 평가를 실시하였다.In order to confirm the cleaning effect of the mask cleaning liquid composition according to the Examples and Comparative Examples, four types of masks ( Material: Invar), the organic particle removal efficiency of the cleaning solution was evaluated.
세정액 조성물의 유기파티클 제거효과를 확인하기 위하여 증착 공정 후 마스크로부터 유기소재를 분리한 후, 실험예 1과 동일한 방법으로 막자 사발을 이용하여 파우더 형태를 만들고 제조한 마스크 세정액 조성물의 중량으로 0.05%의 유기소재를 NMP에 1시간 소니케이터를 이용하여 균일하게 분산시킨 후 1.5×1.5 크기의 Invar 위에 떨어뜨린 다음 100℃ 오븐에서 1 시간동안 건조시켰다. 상기 기판을 상온에서 각 조성물(약액)에 20초간 침적시킨 후, 세정을 거쳐 육안평가와 광학현미경을 이용하여 평가하였다. 그 결과를 하기의 표 3에 나타냈으며 육안으로 관찰 시, 매우 양호는 ◎, 양호는 ○, 보통은 △, 안됨은 ×로 표시하였다.In order to confirm the organic particle removal effect of the cleaning liquid composition, the organic material was separated from the mask after the deposition process, and then made into a powder form using a mortar and pestle in the same manner as in Experimental Example 1, and 0.05% by weight of the prepared mask cleaning liquid composition was added. The organic material was uniformly dispersed in NMP using a sonicator for 1 hour, then dropped onto Invar of 1.5 × 1.5 size and dried in an oven at 100°C for 1 hour. The substrate was immersed in each composition (chemical solution) for 20 seconds at room temperature, then washed and evaluated visually and using an optical microscope. The results are shown in Table 3 below, and when observed with the naked eye, very good was indicated by ◎, good was indicated by ○, average was indicated by △, and poor was indicated by ×.
Mask 2 흡착 물질: biphenyl-3,3'-diyl)bis(diphenylphosphine oxide) (BiPh-m-BiDPO)
Mask 3 흡착 물질: 3-(6-diphenylphosphinylnaphth-2-yl)-1,10-phenanthroline (Phen-m-PhDPO)
Mask 4 흡착 물질: Bis[2-(2-pyridinyl-N)phenyl-C](2,4-pentanedionato-O2,O4)iridium(III)Mask 1 adsorption material: 2-(9,9-Spirobifluoren-2-yl)-9,9-spirobifluorene(BSBF)
Mask 2 Adsorption material: biphenyl-3,3'-diyl)bis(diphenylphosphine oxide) (BiPh-m-BiDPO)
Mask 3 Adsorption material: 3-(6-diphenylphosphinylnaphth-2-yl)-1,10-phenanthroline (Phen-m-PhDPO)
Mask 4 Adsorption material: Bis[2-(2-pyridinyl-N)phenyl-C](2,4-pentanedionato-O2,O4)iridium(III)
상기 표 2에서 실시예 1 내지 20과 비교예 3 내지 15를 보면 화학식 1로 표시되는 아미드계 화합물이 포함되었을 때 마스크 1 내지 3의 흡착 물질에 대한 용해력이 우수하다는 것을 확인할 수 있다. 표 3에서 실시예 1 내지 20과 비교예 1, 2를 비교하였을 때 알칼리성 화합물이 포함되어있는 경우 우수한 세정력을 확보할 수 있음을 알 수 있고, 화학식 1로 표시되는 아미드 계열이 포함되지 않은 비교예의 경우 제거성이 우수하지 않음을 알 수 있다.Looking at Examples 1 to 20 and Comparative Examples 3 to 15 in Table 2, it can be seen that when the amide-based compound represented by Chemical Formula 1 is included, the solubility of the adsorbent materials of Masks 1 to 3 is excellent. In Table 3, when comparing Examples 1 to 20 and Comparative Examples 1 and 2, it can be seen that excellent cleaning power can be secured when an alkaline compound is included, and the amide series represented by Chemical Formula 1 is not included in the Comparative Example. In this case, it can be seen that the removability is not excellent.
Claims (10)
알칼리성 화합물을 포함하며,
N-메틸-2-피롤리돈을 포함하지 않는 마스크 세정액 조성물로,
발광 호스트 재료, 적색 발광 도펀트, 녹색 발광 도펀트, 청색 발광 도펀트, 정공수송층, 정공저지층, 또는 정공주입층을 이루는 유기물질을 세정하기 위한 것인, 마스크 세정액 조성물:
[화학식 1]
상기 화학식 1에서,
R1 및 R2는 각각 독립적으로 수소, 메틸기 또는 에틸기이고,
R3는 수소; 또는 C1 내지 C4의 알콕시기로 치환 또는 비치환된 C1 내지 C4의 포화 또는 C2 내지 C4의 불포화 탄화수소기이며,
단, R1 및 R2가 메틸기인 경우,
R3는 C1 내지 C4의 알콕시기로 치환 또는 비치환된 C2 내지 C4의 포화 또는 불포화 탄화수소기이다.An amide-based compound represented by the following formula (1); and
Contains alkaline compounds,
A mask cleaning liquid composition that does not contain N-methyl-2-pyrrolidone,
A mask cleaning liquid composition for cleaning organic materials constituting a light-emitting host material, a red light-emitting dopant, a green light-emitting dopant, a blue light-emitting dopant, a hole transport layer, a hole blocking layer, or a hole injection layer:
[Formula 1]
In Formula 1,
R1 and R2 are each independently hydrogen, a methyl group, or an ethyl group,
R3 is hydrogen; Or a C1 to C4 saturated or C2 to C4 unsaturated hydrocarbon group substituted or unsubstituted with a C1 to C4 alkoxy group,
However, when R1 and R2 are methyl groups,
R3 is a C2 to C4 saturated or unsaturated hydrocarbon group substituted or unsubstituted with a C1 to C4 alkoxy group.
상기 화학식 1로 표시되는 아미드계 화합물은 N,N-디메틸프로피온아미드, N,N-디메틸이소부틸아미드, N,N-디메틸아크릴아미드, N,N-디메틸메타크릴아미드, N-에틸포름아미드, N,N-디에틸포름아미드, N,N-디에틸아세트아미드, N,N-디에틸프로피온아미드, N,N-디에틸이소부틸아미드, N,N-디에틸아크릴아미드, N,N-디에틸메타크릴아미드, 3-메톡시-N,N-디메틸프로피온아미드 및 3-부톡시-N,N-디메틸프로피온아미드로 이루어진 군에서 선택되는 1 이상인 것인 마스크 세정액 조성물.According to paragraph 1,
The amide-based compound represented by Formula 1 includes N,N-dimethylpropionamide, N,N-dimethylisobutylamide, N,N-dimethylacrylamide, N,N-dimethylmethacrylamide, N-ethylformamide, N,N-diethylformamide, N,N-diethylacetamide, N,N-diethylpropionamide, N,N-diethylisobutylamide, N,N-diethylacrylamide, N,N- A mask cleaning liquid composition comprising at least one selected from the group consisting of diethyl methacrylamide, 3-methoxy-N,N-dimethylpropionamide, and 3-butoxy-N,N-dimethylpropionamide.
상기 알칼리성 화합물은 무기 염기 및 유기 염기로 이루어진 군에서 선택되는 1 이상을 포함하는 것인 마스크 세정액 조성물.According to paragraph 1,
A mask cleaning liquid composition wherein the alkaline compound includes at least one selected from the group consisting of inorganic bases and organic bases.
상기 유기 염기는 아민계 화합물을 포함하는 것인 마스크 세정액 조성물.According to paragraph 3,
A mask cleaning liquid composition wherein the organic base includes an amine-based compound.
수용성 극성용매를 더 포함하는 것인 마스크 세정액 조성물.According to paragraph 1,
A mask cleaning liquid composition further comprising a water-soluble polar solvent.
상기 수용성 극성용매는 양자성 극성용매 및 비양자성 극성용매로 이루어진 군에서 선택되는 1 이상을 포함하는 것인 마스크 세정액 조성물.According to clause 5,
A mask cleaning liquid composition wherein the water-soluble polar solvent includes at least one selected from the group consisting of a protic polar solvent and an aprotic polar solvent.
물을 전체 100 중량부에 대하여 5 중량부 이하로 포함하는 것인 마스크 세정액 조성물.According to paragraph 1,
A mask cleaning liquid composition containing 5 parts by weight or less of water based on a total of 100 parts by weight.
상기 알칼리성 화합물은 상기 마스크 세정액 조성물 전체 100 중량부에 대하여 0.05 내지 10 중량부로 포함되는 것인 마스크 세정액 조성물.According to paragraph 1,
The alkaline compound is contained in an amount of 0.05 to 10 parts by weight based on 100 parts by weight of the mask cleaning liquid composition.
상기 수용성 극성용매는 상기 마스크 세정액 조성물 전체 100 중량부에 대하여 5 내지 35 중량부로 포함되는 것인 마스크 세정액 조성물.According to clause 5,
A mask cleaning liquid composition in which the water-soluble polar solvent is contained in an amount of 5 to 35 parts by weight based on 100 parts by weight of the total mask cleaning liquid composition.
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