KR20110007828A - Stripper composition for copper or copper alloy interconnection - Google Patents
Stripper composition for copper or copper alloy interconnection Download PDFInfo
- Publication number
- KR20110007828A KR20110007828A KR1020090065464A KR20090065464A KR20110007828A KR 20110007828 A KR20110007828 A KR 20110007828A KR 1020090065464 A KR1020090065464 A KR 1020090065464A KR 20090065464 A KR20090065464 A KR 20090065464A KR 20110007828 A KR20110007828 A KR 20110007828A
- Authority
- KR
- South Korea
- Prior art keywords
- copper
- group
- copper alloy
- composition
- ethylene glycol
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 59
- 239000010949 copper Substances 0.000 title claims abstract description 40
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 26
- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 24
- -1 tertiary amine compound Chemical class 0.000 claims abstract description 28
- 239000003960 organic solvent Substances 0.000 claims abstract description 8
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims abstract description 5
- 125000003118 aryl group Chemical group 0.000 claims abstract description 5
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims abstract description 5
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 33
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 21
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 19
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 claims description 17
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 14
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N dimethyl sulfoxide Natural products CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 13
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 150000003851 azoles Chemical class 0.000 claims description 5
- CRDGEHNNNVRHRI-UHFFFAOYSA-N 1-[2-(dimethylamino)ethoxy]ethanethiol Chemical compound CN(C)CCOC(C)S CRDGEHNNNVRHRI-UHFFFAOYSA-N 0.000 claims description 4
- YSAANLSYLSUVHB-UHFFFAOYSA-N 2-[2-(dimethylamino)ethoxy]ethanol Chemical compound CN(C)CCOCCO YSAANLSYLSUVHB-UHFFFAOYSA-N 0.000 claims description 4
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 4
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 claims description 4
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 claims description 3
- 125000000623 heterocyclic group Chemical group 0.000 claims description 3
- FMCUPJKTGNBGEC-UHFFFAOYSA-N 1,2,4-triazol-4-amine Chemical compound NN1C=NN=C1 FMCUPJKTGNBGEC-UHFFFAOYSA-N 0.000 claims description 2
- AZLXQBNSOMJQEJ-UHFFFAOYSA-N 1,3-di(propan-2-yl)imidazolidin-2-one Chemical compound CC(C)N1CCN(C(C)C)C1=O AZLXQBNSOMJQEJ-UHFFFAOYSA-N 0.000 claims description 2
- NYCCIHSMVNRABA-UHFFFAOYSA-N 1,3-diethylimidazolidin-2-one Chemical compound CCN1CCN(CC)C1=O NYCCIHSMVNRABA-UHFFFAOYSA-N 0.000 claims description 2
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical compound OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 claims description 2
- PJEXUIKBGBSHBS-UHFFFAOYSA-N 1-(hydroxymethyl)pyrrolidin-2-one Chemical compound OCN1CCCC1=O PJEXUIKBGBSHBS-UHFFFAOYSA-N 0.000 claims description 2
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 claims description 2
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 claims description 2
- SNKVLEQXLZLZJS-UHFFFAOYSA-N 1-[2-(dipropylamino)ethoxy]butane-1-thiol Chemical compound C(CC)N(CCC)CCOC(CCC)S SNKVLEQXLZLZJS-UHFFFAOYSA-N 0.000 claims description 2
- IEEWESOCWFIEEO-UHFFFAOYSA-N 1-[2-(dipropylamino)ethoxy]ethanol Chemical compound CCCN(CCC)CCOC(C)O IEEWESOCWFIEEO-UHFFFAOYSA-N 0.000 claims description 2
- MBDUIEKYVPVZJH-UHFFFAOYSA-N 1-ethylsulfonylethane Chemical compound CCS(=O)(=O)CC MBDUIEKYVPVZJH-UHFFFAOYSA-N 0.000 claims description 2
- HXQHRUJXQJEGER-UHFFFAOYSA-N 1-methylbenzotriazole Chemical compound C1=CC=C2N(C)N=NC2=C1 HXQHRUJXQJEGER-UHFFFAOYSA-N 0.000 claims description 2
- DCALJVULAGICIX-UHFFFAOYSA-N 1-propylpyrrolidin-2-one Chemical compound CCCN1CCCC1=O DCALJVULAGICIX-UHFFFAOYSA-N 0.000 claims description 2
- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical compound C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 claims description 2
- QQLILYBIARWEIF-UHFFFAOYSA-N 2-(2-hydroxyethylsulfonyl)ethanol Chemical compound OCCS(=O)(=O)CCO QQLILYBIARWEIF-UHFFFAOYSA-N 0.000 claims description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 2
- DJCYDDALXPHSHR-UHFFFAOYSA-N 2-(2-propoxyethoxy)ethanol Chemical compound CCCOCCOCCO DJCYDDALXPHSHR-UHFFFAOYSA-N 0.000 claims description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 claims description 2
- PWORFEDVDWBHSJ-UHFFFAOYSA-N 2-methylbenzotriazole Chemical compound C1=CC=CC2=NN(C)N=C21 PWORFEDVDWBHSJ-UHFFFAOYSA-N 0.000 claims description 2
- UTMDJGPRCLQPBT-UHFFFAOYSA-N 4-nitro-1h-1,2,3-benzotriazole Chemical compound [O-][N+](=O)C1=CC=CC2=NNN=C12 UTMDJGPRCLQPBT-UHFFFAOYSA-N 0.000 claims description 2
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 2
- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 claims description 2
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 claims description 2
- VIJJLXBGUHTKEA-UHFFFAOYSA-N C(C)N(CC)CCOC(CC)S Chemical compound C(C)N(CC)CCOC(CC)S VIJJLXBGUHTKEA-UHFFFAOYSA-N 0.000 claims description 2
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 claims description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 2
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 claims description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 2
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 claims 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 claims 2
- SEQVGSMAFZXDPQ-UHFFFAOYSA-N 1-[2-(ethylamino)ethoxy]ethanol Chemical compound CCNCCOC(C)O SEQVGSMAFZXDPQ-UHFFFAOYSA-N 0.000 claims 1
- GUOVBFFLXKJFEE-UHFFFAOYSA-N 2h-benzotriazole-5-carboxylic acid Chemical compound C1=C(C(=O)O)C=CC2=NNN=C21 GUOVBFFLXKJFEE-UHFFFAOYSA-N 0.000 claims 1
- IAZDPXIOMUYVGZ-WFGJKAKNSA-N Dimethyl sulfoxide Chemical group [2H]C([2H])([2H])S(=O)C([2H])([2H])[2H] IAZDPXIOMUYVGZ-WFGJKAKNSA-N 0.000 claims 1
- 230000007797 corrosion Effects 0.000 abstract description 29
- 238000005260 corrosion Methods 0.000 abstract description 29
- 229910052751 metal Inorganic materials 0.000 abstract description 15
- 239000002184 metal Substances 0.000 abstract description 15
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 5
- 125000000217 alkyl group Chemical group 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract 2
- 125000004183 alkoxy alkyl group Chemical group 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 27
- 229920002120 photoresistant polymer Polymers 0.000 description 25
- 230000000052 comparative effect Effects 0.000 description 23
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 13
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 5
- 150000001412 amines Chemical class 0.000 description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 4
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 description 4
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 4
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910021642 ultra pure water Inorganic materials 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- MGZVAJPSJZKOJY-UHFFFAOYSA-N 1,3-dibutoxypropan-2-amine Chemical compound C(CCC)OCC(N)COCCCC MGZVAJPSJZKOJY-UHFFFAOYSA-N 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- WFCSWCVEJLETKA-UHFFFAOYSA-N 2-piperazin-1-ylethanol Chemical compound OCCN1CCNCC1 WFCSWCVEJLETKA-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229940074391 gallic acid Drugs 0.000 description 2
- 235000004515 gallic acid Nutrition 0.000 description 2
- 150000008624 imidazolidinones Chemical class 0.000 description 2
- 150000003951 lactams Chemical class 0.000 description 2
- KDCHKULYGWACNY-UHFFFAOYSA-N n-(butoxymethyl)-n-ethylethanamine Chemical compound CCCCOCN(CC)CC KDCHKULYGWACNY-UHFFFAOYSA-N 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 150000005846 sugar alcohols Polymers 0.000 description 2
- 150000003457 sulfones Chemical class 0.000 description 2
- 150000003462 sulfoxides Chemical class 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 150000003852 triazoles Chemical group 0.000 description 2
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- VKBVRNHODPFVHK-UHFFFAOYSA-N 2-[2-(diethylamino)ethoxy]ethanol Chemical compound CCN(CC)CCOCCO VKBVRNHODPFVHK-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical class C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- TUVYSBJZBYRDHP-UHFFFAOYSA-N acetic acid;methoxymethane Chemical compound COC.CC(O)=O TUVYSBJZBYRDHP-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000004996 alkyl benzenes Chemical class 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- DLDJFQGPPSQZKI-UHFFFAOYSA-N but-2-yne-1,4-diol Chemical compound OCC#CCO DLDJFQGPPSQZKI-UHFFFAOYSA-N 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- XLYOFNOQVPJJNP-DYCDLGHISA-N deuterium hydrogen oxide Chemical compound [2H]O XLYOFNOQVPJJNP-DYCDLGHISA-N 0.000 description 1
- CCAFPWNGIUBUSD-UHFFFAOYSA-N diethyl sulfoxide Chemical compound CCS(=O)CC CCAFPWNGIUBUSD-UHFFFAOYSA-N 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 229960003742 phenol Drugs 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Preventing Corrosion Or Incrustation Of Metals (AREA)
Abstract
Description
본 발명은 반도체소자 또는 평판표시소자 제조공정 중 사용되는 구리 또는 구리합금 배선용 박리액 조성물에 관한 것으로서, 더욱 상세하게는, 포토레지스트 제거 시, 기 형성된 구리 또는 구리합금 배선의 부식을 방지할 수 있는 박리액 조성물에 관한 것이다. The present invention relates to a stripper liquid composition for copper or copper alloy wiring used in a semiconductor device or a flat panel display manufacturing process, and more particularly, to prevent corrosion of preformed copper or copper alloy wiring when removing a photoresist. A peeling liquid composition is related.
반도체소자의 집적회로 또는 평판표시소자의 미세회로 제조공정은 기판 상에 형성된 도전성 금속막 또는 절연막 상에 포토레지스트를 균일하게 도포하고, 선택적으로 노광하고, 현상처리하여 포토레지스트 패턴을 형성한다. 여기서, 도전성 금속막으로는 알루미늄 또는 알루미늄 합금, 구리 또는 구리합금 등이 사용되고, 절연막으로는 실리콘 산화막, 실리콘 질화막 등이 사용된다. 이어서, 패턴화된 포토레지스트막을 마스크로 하여 상기 도전성 금속막 또는 절연막을 습식 또는 건식으로 식각하여 미세 회로 패턴을 포토레지스트 하부층에 전사한 후, 불필요한 포토레지스트층을 포토레지스트 박리액 조성물로 제거하는 과정으로 진행된다.In the process of fabricating an integrated circuit of a semiconductor device or a fine circuit of a flat panel display device, a photoresist is uniformly applied, selectively exposed, and developed on a conductive metal film or an insulating film formed on a substrate to form a photoresist pattern. Here, aluminum or an aluminum alloy, copper, a copper alloy, etc. are used as a conductive metal film, and a silicon oxide film, a silicon nitride film, etc. are used as an insulating film. Subsequently, the conductive metal film or the insulating film is etched wet or dry using a patterned photoresist film as a mask to transfer the fine circuit pattern to the lower photoresist layer, and then the unnecessary photoresist layer is removed with the photoresist stripper composition. Proceeds.
상기 미세회로 제조공정에서 발생한 포토레지스트를 제거하기 위해서, 박리 액 조성물은 저온에서 단시간 내에 포토레지스트를 박리할 수 있어야 한다. 또한, 세척(rinse)한 후 기판 상에 포토레지스트 잔류물을 남기지 않을 정도로 우수한 박리능력을 가져야 한다. 또한, 포토레지스트 하부층의 금속막 또는 절연막을 손상시키지 않는 저부식성이 반드시 요구된다. 이와 같은 조건들을 충족시키기 위해 다양한 박리액 조성물이 연구개발되어 왔으며, 그러한 구체적인 예는 다음과 같다.In order to remove the photoresist generated in the microcircuit manufacturing process, the stripping liquid composition should be capable of peeling the photoresist in a short time at low temperature. It should also have good peeling capacity to leave no photoresist residue on the substrate after rinse. In addition, low corrosion resistance that does not damage the metal film or insulating film of the photoresist underlayer is required. Various peeling liquid compositions have been researched and developed to meet these conditions, and specific examples thereof are as follows.
일본공개특허공보 소51-72503호는 탄소수 10 내지 20개의 알킬 벤젠 설폰산 및 비점이 150℃ 이상인 비할로겐화 방향족 탄화수소를 포함하는 박리액 조성물에 대하여 개시하고 있다. 또한, 일본공개특허공보 소57-84456호는 디메틸설폭사이드 또는 디에틸설폭사이드와 유기 설폰화합물을 포함하는 박리액 조성물에 대하여 개시하고 있다. 또한 미국특허 제4,256,294호는 알킬아릴 설폰산, 탄소수 6 내지 9 개의 친수성 방향족 설폰산 및 비점이 150℃ 이상인 비할로겐화 방향족 탄화수소를 포함하는 박리액 조성물에 대하여 개시하고 있다.Japanese Laid-Open Patent Publication No. 51-72503 discloses a stripping liquid composition containing an alkyl benzene sulfonic acid having 10 to 20 carbon atoms and a non-halogenated aromatic hydrocarbon having a boiling point of 150 ° C or higher. Further, Japanese Laid-Open Patent Publication No. 57-84456 discloses a stripping liquid composition containing dimethyl sulfoxide or diethyl sulfoxide and an organic sulfone compound. U.S. Patent No. 4,256,294 also discloses a stripper composition comprising an alkylaryl sulfonic acid, a hydrophilic aromatic sulfonic acid having 6 to 9 carbon atoms and a non-halogenated aromatic hydrocarbon having a boiling point of at least 150 ° C.
그러나 상기와 같은 종래 박리액 조성물들은 알루미늄, 구리 또는 구리 합금 등의 도전성 금속막에 대한 부식이 심하고, 강한 독성으로 환경오염문제가 있어 사용이 곤란하다는 문제점이 있다. 따라서, 상기와 같은 문제점을 해결하기 위해, 수용성 알칸올 아민을 필수성분으로 여러 유기용매를 혼합하여 포토박리액 조성물을 제조하는 기술들이 제안되어 왔고, 그 예는 다음과 같다. However, the conventional peeling liquid compositions as described above have a problem in that corrosion to a conductive metal film such as aluminum, copper, or copper alloy is severe, and there is a problem of environmental pollution due to strong toxicity, which makes it difficult to use. Therefore, in order to solve the above problems, techniques for preparing a photo-peel solution composition by mixing various organic solvents with water-soluble alkanol amines as essential components have been proposed.
미국특허 제4,617,251호는 모노에탄올아민(MEA), 2-(2-아미노에톡시)-1-에탄올(AEE) 등의 유기아민화합물과 디메틸포름아미드(DMF), 디메틸아세트아미드(DMAc), N-메틸피롤리돈(NMP), 디메틸설폭사이드(DMSO), 카비톨 아세테이트, 프 로필렌글리콜 모노메틸에테르 아세테이트(PGMEA) 등의 극성용매를 포함하는 2 성분계 박리액 조성물에 대하여 개시하고 있다. 일본공개특허공보 소62-49355호는 알칸올 아민 및 에틸렌디아민에 에틸렌옥사이드를 도입한 알킬렌 폴리아민 설폰 화합물과 글리콜 모노알킬에테르를 포함하는 박리액 조성물에 대하여 개시하고 있다. 일본공개특허공보 소64-42653호는 디메틸설폭사이드(DMSO), 디에틸렌글리콜 모노알킬에테르, 디에틸렌글리콜 디알킬에테르, 감마부티로락톤, 및 1,3-디메틸-2-이미다졸리디논으로부터 선택된 1 종 이상의 용매, 및 모노에탄올아민 등의 함질소 유기히드록시 화합물을 포함하는 박리액 조성물에 대하여 개시하고 있다. 또한, 일본공개특허공보 평4-124668호는 유기 아민, 인산에스테르 계면활성제, 2-부틴-1,4-디올, 디에틸렌글리콜 디알킬에테르, 및 비양자성 극성용매류를 포함하는 박리액 조성물에 대하여 개시하고 있다.U.S. Patent No. 4,617,251 discloses organic amine compounds such as monoethanolamine (MEA), 2- (2-aminoethoxy) -1-ethanol (AEE), dimethylformamide (DMF), dimethylacetamide (DMAc), N A two-component stripper composition comprising a polar solvent such as -methylpyrrolidone (NMP), dimethyl sulfoxide (DMSO), carbitol acetate, and propylene glycol monomethyl ether acetate (PGMEA) is disclosed. Japanese Laid-Open Patent Publication No. 62-49355 discloses a peeling liquid composition comprising an alkylene polyamine sulfone compound in which ethylene oxide is introduced into an alkanol amine and ethylenediamine and a glycol monoalkyl ether. Japanese Patent Application Laid-Open No. 64-42653 discloses dimethyl sulfoxide (DMSO), diethylene glycol monoalkyl ether, diethylene glycol dialkyl ether, gamma butyrolactone, and 1,3-dimethyl-2-imidazolidinone. Disclosed is a stripper composition comprising at least one selected solvent and a nitrogen-containing organic hydroxy compound such as monoethanolamine. In addition, Japanese Patent Application Laid-Open No. 4-124668 discloses a stripping liquid composition comprising an organic amine, a phosphate ester surfactant, 2-butyne-1,4-diol, diethylene glycol dialkyl ether, and an aprotic polar solvents. It is disclosed.
그러나, 상기 박리액 조성물들은 구리 또는 구리 합금을 포함하는 막질에 대한 부식방지력이 약하여 박리 공정 중에 심한 부식을 유발하며, 후 공정인 게이트 절연막 증착 시 불량을 야기하는 문제가 있다, However, the peeling liquid compositions have a problem of causing corrosion in the peeling process due to a weak corrosion protection against the film quality including copper or a copper alloy, and inferior defects during the deposition of the gate insulating film, which is a later process.
본 발명은, 상기와 같은 종래 기술의 문제를 해결하기 위한 것으로서, The present invention is to solve the problems of the prior art as described above,
중간 세정액인 이소프로판올을 사용하지 않고서도 포토레지스트 하부층인 구리 또는 구리합금을 포함하는 금속막과 실리콘 산화막, 실리콘 질화막 등의 절연막에 대한 부식을 동시에 최소화할 수 있는 구리 또는 구리합금 배선용 박리액 조성물을 제공하는 것을 목적으로 한다. Provides a stripper composition for copper or copper alloy wiring which can minimize corrosion to a metal film containing copper or a copper alloy as a photoresist underlayer and an insulating film such as a silicon oxide film and a silicon nitride film without using isopropanol as an intermediate cleaning solution. It aims to do it.
또한, 가혹한 포토리소그라피 공정 및 습식식각 공정에 의해 변질 경화된 포토레지스트막을 저온에서도 단시간 내에 용이하고 깨끗이 제거할 수 있으며, 딥방식, 매엽식 및 분무식 박리공정에 모두 적용할 수 있는 박리액 조성물을 제공하는 것을 목적으로 한다.In addition, it is possible to easily and cleanly remove the photoresist film that has been deteriorated and cured by a harsh photolithography process and a wet etching process in a short time even at low temperature, and can be applied to a dip method, a sheet type, and a spray peeling process. It aims to provide.
본 발명은,The present invention,
조성물 총 중량에 대하여, (A) 화학식 1로 표시되는 3차 아민 화합물 0.1 내지 30 중량%, (B) 아졸류 화합물 0.01 내지10 중량% 및 (C) 잔량의 유기용매를 포함하는 구리 또는 구리합금 배선용 박리액 조성물을 제공한다:Based on the total weight of the composition, (A) 0.1 to 30% by weight of the tertiary amine compound represented by the formula (1), (B) 0.01 to 10% by weight of the azole compounds, and (C) a copper or copper alloy containing the remaining organic solvent A wiring release liquid composition is provided:
상기 식에서, R1은 C1~C4의 직쇄 또는 분지쇄형 히드록시알킬기, 또는 C1~C4의 직쇄 또는 분지쇄형 티올알킬기이고; R2 및 R3는 각각 독립적으로 C1~C5의 알킬기, C1~C4의 히드록시알킬기, C6~C10의 아릴기 또는 C1~C4의 알콕시알킬기이며, R2 및 R3는 결합하여 헤테로고리를 형성할 수 있으며; n은 O 내지 4의 자연수이다. Wherein R 1 is a C 1 to C 4 straight or branched hydroxyalkyl group, or C 1 to C 4 straight or branched thiolalkyl group; R 2 and R 3 are each independently a C 1 to C 5 alkyl group, C 1 to C 4 hydroxyalkyl group, C 6 to C 10 aryl group or C 1 to C 4 alkoxyalkyl group, R 2 and R 3 may combine to form a heterocycle; n is a natural number of 0 to 4.
본 발명의 박리액 조성물은 중간 세정제인 이소프로판올을 사용하지 않고서도, 포토레지스트 하부층인, 구리 또는 구리합금을 포함하는 금속막과 실리콘 산화막, 실리콘 질화막 등의 절연막에 대한 부식을 동시에 최소화시키기 때문에, 레지스트 제거 공정의 간소화 및 배선 불량률 감소 효과를 제공한다. 또한, 가혹한 포토리소그라피 공정 및 습식식각 공정에 의해 변질경화된 포토레지스트막을 고온 및 저온에서도 단시간 내에 용이하고 깨끗이 제거할 수 있어 효과적이며, 딥방식, 분무식 및 매엽식 박리공정에 모두 적용될 수 있어 편리하다.Since the peeling liquid composition of the present invention minimizes corrosion to an insulating film such as a silicon oxide film, a silicon nitride film, and a metal film containing copper or a copper alloy, which is a photoresist underlayer, without using isopropanol as an intermediate cleaner, It simplifies the removal process and reduces the wiring defect rate. In addition, the photoresist film hardened by the harsh photolithography process and wet etching process can be easily and cleanly removed in a short time even at a high temperature and a low temperature, and it is effective, and can be applied to both a dip method, a spray type, and a sheet type peeling process. Do.
본 발명은 조성물 총 중량에 대하여, (A) 화학식 1로 표시되는 3차 아민 화합물 0.1 내지 30 중량%, (B) 아졸류 화합물 0.01 내지10 중량% 및 (C) 잔량의 유기용매를 포함하는 구리 또는 구리합금 배선용 박리액 조성물에 관한 것이다: The present invention is based on the total weight of the composition, (A) copper containing 0.1 to 30% by weight of the tertiary amine compound represented by the formula (1), (B) 0.01 to 10% by weight of the azole compound and (C) the remaining amount of the organic solvent Or to a stripper composition for copper alloy wiring:
[화학식1] [Formula 1]
상기 식에서, R1은 C1~C4의 직쇄 또는 분지쇄형 히드록시알킬기, C1~C4의 직쇄 또는 분지쇄형 티올알킬기이고; R2 및 R3는 각각 독립적으로 C1~C5의 알킬기, C1~C4의 히드록시알킬기, C6~C10의 아릴기 또는 C1~C4의 알콕시알킬기이며, R2 및 R3는 결합하여 헤테로고리를 형성할 수 있으며; n은O 내지 4의 자연수이다. Wherein R 1 is a C 1 to C 4 straight or branched hydroxyalkyl group, C 1 to C 4 straight or branched thiolalkyl group; R 2 and R 3 are each independently a C 1 to C 5 alkyl group, C 1 to C 4 hydroxyalkyl group, C 6 to C 10 aryl group or C 1 to C 4 alkoxyalkyl group, R 2 and R 3 may combine to form a heterocycle; n is a natural number of 0 to 4.
본 발명에서 "구리 또는 구리합금 배선용 박리액 조성물"이란 구리 또는 구리합금을 포함하는 막질로 형성되는 배선의 형성에 사용되는 박리액 조성물을 의미한다. In the present invention, "peel or copper alloy wiring stripping liquid composition" means a stripping liquid composition used for forming a wiring formed of a film quality containing copper or copper alloy.
일반적으로, 레지스트 제거 공정에서 중간 세정액인 이소프로판올을 사용하지 않고 바로 물로 세정할 경우, 박리액 조성물 내의 아민 성분이 물과 혼합되면서 부식성이 강한 알칼리의 히드록시 이온이 발생되어, 구리 또는 구리합금 등의 도전성 금속막의 부식을 촉진시키는 것으로 알려져 있다. 그러나, 본 발명의 박리액 조 성물은 중간 세정액을 사용하지 않으면서도, 포토레지스트 하부층인, 구리 또는 구리합금을 포함하는 금속막뿐만 아니라, 실리콘 산화막, 실리콘 질화막 등의 절연막에 대한 부식도 동시에 최소화시키는 특성을 갖는다. In general, when washing with water without using isopropanol, which is an intermediate cleaning liquid, in the resist removal process, amine components in the stripping liquid composition are mixed with water to generate highly corrosive alkali hydroxy ions, such as copper or copper alloy. It is known to accelerate the corrosion of the conductive metal film. However, the stripper composition of the present invention simultaneously minimizes corrosion of not only a metal film containing copper or a copper alloy, which is a photoresist underlayer, but also an insulating film such as a silicon oxide film and a silicon nitride film, without using an intermediate cleaning solution. Has characteristics.
본 발명의 박리액 조성물에 포함되는 (A) 3차 아민 화합물은 조성물 총 중량에 대하여, 0.1 내지 30중량%로 포함되고, 바람직하게는 1 내지 10중량%로 포함된다. 상술한 범위를 만족하면, 변성된 포토레지스트에 대한 박리력이 우수하고, 포토레지스트 하부층인 도전성 금속막에 대한 부식이 방지된다. The tertiary amine compound (A) contained in the stripper composition of the present invention is included in an amount of 0.1 to 30% by weight, preferably 1 to 10% by weight, based on the total weight of the composition. When the above-mentioned range is satisfied, the peeling force with respect to the modified photoresist is excellent, and the corrosion to the conductive metal film which is the photoresist underlayer is prevented.
상기 (A) 3차 아민 화합물은 디메틸아미노에톡시에탄티올, 디에틸아미노에톡시프로판티올, 디프로필아미노에톡시부탄티올, 디부틸아미노에톡시에탄올 디메틸아미노에톡시에탄올, 디에틸아미노에톡시에탄올, 디프로필아미노에톡시에탄올, 디부틸아미노에톡시에탄올, N-(2-메톡시에탄올)몰폴린, N-(2-에톡시에탄올)몰폴린, N-(2-부톡시에탄올)몰폴린 등을 들 수 있으며, 이들은 1종 단독으로 또는 2종 이상이 함께 사용될 수 있다. The tertiary amine compound (A) may be dimethylaminoethoxyethanethiol, diethylaminoethoxypropanethiol, dipropylaminoethoxybutanethiol, dibutylaminoethoxyethanol dimethylaminoethoxyethanol, diethylaminoethoxyethanol , Dipropylaminoethoxyethanol, dibutylaminoethoxyethanol, N- (2-methoxyethanol) morpholine, N- (2-ethoxyethanol) morpholine, N- (2-butoxyethanol) morpholine These etc. can be mentioned, These can be used individually by 1 type or in combination of 2 or more types.
본 발명의 박리액 조성물에 포함되는 (B) 아졸류 화합물은 디아졸류 및 트리아졸류 화합물 등을 들 수 있으며, 이들은 1종 단독으로 또는 2종 이상이 함께 사용될 수 있다. 상기 아졸류 화합물은 포토레지스트 하부의 도전성 금속막과 절연막의 부식을 최소화한다.Examples of the (B) azole compounds included in the stripper composition of the present invention include diazoles and triazole compounds, and these may be used alone or in combination of two or more. The azole compound minimizes corrosion of the conductive metal film and the insulating film under the photoresist.
상기 (B) 아졸류 화합물은 조성물 총 중량에 대하여, 0.01 내지 10 중량%로 포함되고, 바람직하게는 0.1 내지 3 중량%로 포함된다. 상술한 범위가 만족되면, 포토레지스트의 하부층인 도전성 금속막과 절연막의 손상이 최소화되어 배선 불량률이 감소되므로 뛰어난 경제성을 얻을 수 있다. The azole compounds (B) are included in an amount of 0.01 to 10% by weight, preferably 0.1 to 3% by weight, based on the total weight of the composition. When the above range is satisfied, damage to the conductive metal film and the insulating layer, which are lower layers of the photoresist, is minimized, thereby reducing the wiring defect rate, thereby obtaining excellent economic efficiency.
본 발명의 박리액 조성물에 사용되는 아졸계 화합물로는 트리아졸 고리를 포함하는 것이 특히, 바람직한데, 트리아졸 고리에 존재하는 질소 원자의 비공유전자쌍이 구리와 전자적으로 결합하여 금속 부식을 제어한다. 상기 아졸계 화합물들의 구체적인 예로는 톨리트리아졸, 1,2,3-벤조트리아졸, 1,2,3-트리아졸, 1,2,4-트리아졸, 3-아미노-1,2,4-트리아졸, 4-아미노-4H-1,2,4-트리아졸, 1-히드록시벤조트리아졸, 1-메틸벤조트리아졸, 2-메틸벤조트리아졸, 5-메틸벤조트리아졸, 벤조트리아졸-5-카르복실산, 니트로벤조트리아졸, 2-(2H-벤조트리아졸-2-일)-4,6-디-t-부틸페놀 등을 들 수 있으며, 이들은1종 단독으로 또는 2종 이상이 함께 사용될 수 있다. The azole compound used in the stripper composition of the present invention is particularly preferably a triazole ring. A non-covalent electron pair of nitrogen atoms present in the triazole ring electronically bonds with copper to control metal corrosion. Specific examples of the azole compounds include tolytriazole, 1,2,3-benzotriazole, 1,2,3-triazole, 1,2,4-triazole, 3-amino-1,2,4 -Triazole, 4-amino-4H-1,2,4-triazole, 1-hydroxybenzotriazole, 1-methylbenzotriazole, 2-methylbenzotriazole, 5-methylbenzotriazole, benzotria Sol-5-carboxylic acid, nitrobenzotriazole, 2- (2H-benzotriazol-2-yl) -4,6-di-tet-butylphenol and the like, and these may be used alone or in combination. More than one species may be used together.
본 발명의 박리액 조성물에 포함되는 (C) 유기용매는 상기 (A) 및 (B) 성분을 포함하는 본 발명의 조성물이 100중량%가 되게 하는 함량(잔량)으로 포함된다. 상기 (C) 유기용매로는 술폭사이드류, 술폰류, 아미드류, 락탐류, 이미다졸리디논류, 모노 또는 디에틸렌글리콜모노알킬에테르, 다가알코올류 및 이들의 유도체 등이 사용될 수 있으며, 이들은 1종 단독으로 또는 2종 이상이 함께 사용될 수 있다. (C) The organic solvent contained in the peeling liquid composition of this invention is contained in content (remaining quantity) which makes the composition of this invention containing the said (A) and (B) component 100 weight%. As the organic solvent (C), sulfoxides, sulfones, amides, lactams, imidazolidinones, mono or diethylene glycol monoalkyl ethers, polyhydric alcohols, and derivatives thereof may be used. One kind alone or two or more kinds may be used together.
상기 술폭사이드류로의 예로는 디메틸술폭사이드 등을 들 수 있고; 상기 술폰류의 예로는 디메틸술폰, 디에틸술폰, 비스(2-히드록시에틸)술폰, 테트라메틸렌 술폰 등을 들 수 있다. Examples of the sulfoxides include dimethyl sulfoxide and the like; Examples of the sulfones include dimethyl sulfone, diethyl sulfone, bis (2-hydroxyethyl) sulfone, tetramethylene sulfone and the like.
상기 아미드류의 예로는 N,N-디메틸포름아미드, N-메틸포름아미드, N,N-디메틸아세트아미드, N-메틸아세토아미드, N,N-디에틸아세토아미드 등을 들 수 있고; Examples of the amides include N, N-dimethylformamide, N-methylformamide, N, N-dimethylacetamide, N-methylacetoamide, N, N-diethylacetoamide, and the like;
상기 락탐류의 예로는 N-메틸-2-피롤리돈, N-에틸-2-피롤리돈, N-프로필-2-피롤리돈, N-히드록시메틸-2-피롤리돈, N-히드록시에틸-2-피롤리돈 등을 들 수 있다. Examples of the lactams include N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-propyl-2-pyrrolidone, N-hydroxymethyl-2-pyrrolidone, N- Hydroxyethyl-2-pyrrolidone and the like.
상기 이미다졸리디논류의 예로는 1,3-디메틸-2-이미다졸리디논, 1,3-디에틸-2-이미다졸리디논, 1,3-디이소프로필-2-이미다졸리디논 등을 들 수 있다. Examples of the imidazolidinones include 1,3-dimethyl-2-imidazolidinone, 1,3-diethyl-2-imidazolidinone, and 1,3-diisopropyl-2-imidazolidinone Etc. can be mentioned.
상기 모노 또는 디에틸렌글리콜모노알킬에테르의 경우, 알킬은 탄소 원자수 1 내지 6의 저급알킬기를 의미하며, 구체적인 예로는 에틸렌글리콜모노메틸에테르, 에틸렌글리콜모노에틸에테르, 에틸렌글리콜모노부틸에테르, 에틸렌글리콜모노메틸에테르아세테이트, 에틸렌글리콜모노에틸에테르아세테이트, 디에틸렌글리콜모노메틸에테르, 디에틸렌글리콜모노에틸에테르, 디에틸렌글리콜모노프로필에테르 및 디에틸렌글리콜모노부틸에테르를 들 수 있다. In the case of the mono or diethylene glycol monoalkyl ether, alkyl means a lower alkyl group having 1 to 6 carbon atoms, and specific examples thereof include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, and ethylene glycol. Monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether and diethylene glycol monobutyl ether.
또한, 상기 다가알코올류의 구체적인 예로는 에틸렌글리콜, 디에틸렌글리콜 등을 들 수 있다.In addition, specific examples of the polyhydric alcohols include ethylene glycol, diethylene glycol, and the like.
본 발명의 박리액 조성물은 (D) 물을 추가로 포함할 수 있다. 상기 (D) 물은 탈이온수를 의미하며 반도체 공정용을 사용하며, 바람직하게는 18㏁/㎝ 이상의 물을 사용한다.The stripper composition of the present invention may further include (D) water. The water (D) means deionized water and is used for the semiconductor process, preferably water of 18 dl / cm or more.
본 발명의 박리액 조성물은 상기에 언급된 성분들 외에 통상의 첨가제를 더 첨가할 수 있으며, 그러한 첨가제로는 히드록시 벤젠계 화합물, 환원제 등을 포함한 부식 방지제, pH 조절제, 계면활성제 등을 들 수 있다. The peeling liquid composition of the present invention may further add a conventional additive in addition to the above-mentioned components, such additives include a hydroxy benzene-based compound, a corrosion inhibitor including a reducing agent, a pH adjusting agent, a surfactant, and the like. have.
본 발명의 구리용 박리액 조성물은 딥방식, 분무식 및 매엽식 박리공정에 모두 적용할 수 있다. The peeling liquid composition for copper of this invention can be applied to both a dip method, a spray type, and a single type peeling process.
이하에서, 실시예를 통하여 본 발명을 보다 상세히 설명한다. 그러나, 하기의 실시예는 본 발명을 더욱 구체적으로 설명하기 위한 것으로서, 본 발명의 범위가 하기의 실시예에 의하여 한정되는 것은 아니다. 하기의 실시예는 본 발명의 범위 내에서 당업자에 의해 적절히 수정, 변경될 수 있다. Hereinafter, the present invention will be described in more detail with reference to Examples. However, the following examples are intended to illustrate the present invention more specifically, but the scope of the present invention is not limited by the following examples. The following examples can be appropriately modified and changed by those skilled in the art within the scope of the present invention.
실시예1 내지 6 및 비교예1 내지 8: 포토박리액 조성물의 제조Examples 1-6 and Comparative Examples 1-8 8: Preparation of Photopeel Composition
하기 표 1에 기재된 성분 및 조성비에 따라 구리용 박리액 조성물을 제조하였다. The peeling liquid composition for copper was manufactured according to the component and composition ratio of following Table 1.
[주] [week]
DMAET: 디메틸아미노에톡시에탄티올, DBAET: 디부틸아미노에톡시에탄티올,DMAET: dimethylaminoethoxyethanethiol, DBAET: dibutylaminoethoxyethanethiol,
DMAEE: 디메틸아미노에톡시에탄올, DBAEE: 디부틸아미노에톡시에탄올, DMAEE: dimethylaminoethoxyethanol, DBAEE: dibutylaminoethoxyethanol,
MEA: 모노에탄올아민, NMEA: N-메틸에탄올아민, MEA: monoethanolamine, NMEA: N-methylethanolamine,
DEA : 디에탄올아민, DGA: 디글리콜아민,DEA: diethanolamine, DGA: diglycolamine,
HEP :히드록시에틸피페라진, DBM : 디(부톡시메틸)아미노메탄,HEP: hydroxyethyl piperazine, DBM: di (butoxymethyl) aminomethane,
BDE : (부톡시메틸)디에틸아민, NMP: N-메틸-2-피롤리돈,BDE: (butoxymethyl) diethylamine, NMP: N-methyl-2-pyrrolidone,
DMF: N,N-디메틸포름아미드, BDG: 부틸디글리콜,DMF: N, N-dimethylformamide, BDG: butyldiglycol,
TEG: 트리에틸렌클리콜, NMF: N-메틸포름아미드,TEG: triethylene glycol, NMF: N-methylformamide,
DMAc: N,N-디메틸아세트아미드, CAT: 카테콜,DMAc: N, N-dimethylacetamide, CAT: catechol,
GA: 갈산, TTA: 톨리트리아졸,GA: gallic acid, TTA: tolytriazole,
BTA: 1,2,3-벤조트리아졸BTA: 1,2,3-benzotriazole
시험예: 식각 특성 평가Test Example: Evaluation of Etch Characteristics
실시예1 내지 6 및 비교예1 내지 8에서 제조한 박리액 조성물을 이용하여 하기와 같은 방법으로 구리 배선에 대한 박리력과 부식정도를 측정하였다.The peeling force and the degree of corrosion of the copper wirings were measured using the peeling liquid compositions prepared in Examples 1 to 6 and Comparative Examples 1 to 8 in the following manner.
[DMAET: 디메틸아미노에톡시에탄티올, DBAET: 디부틸아미노에톡시에탄티올, [DMAET: Dimethylaminoethoxyethanethiol, DBAET: Dibutylaminoethoxyethanethiol,
DMAEE: 디메틸아미노에톡시에탄올, DBAEE: 디부틸아미노에톡시에탄올, DMAEE: dimethylaminoethoxyethanol, DBAEE: dibutylaminoethoxyethanol,
MEA: 모노에탄올아민, NMEA: N-메틸에탄올아민, MEA: monoethanolamine, NMEA: N-methylethanolamine,
DEA : 디에탄올아민, DGA: 디글리콜아민,DEA: diethanolamine, DGA: diglycolamine,
HEP :히드록시에틸피페라진, DBM : 디(부톡시메틸)아미노메탄,HEP: hydroxyethyl piperazine, DBM: di (butoxymethyl) aminomethane,
BDE : (부톡시메틸)디에틸아민, NMP: N-메틸-2-피롤리돈,BDE: (butoxymethyl) diethylamine, NMP: N-methyl-2-pyrrolidone,
DMF: N,N-디메틸포름아미드, BDG: 부틸디글리콜,DMF: N, N-dimethylformamide, BDG: butyldiglycol,
TEG: 트리에틸렌클리콜, NMF: N-메틸포름아미드,TEG: triethylene glycol, NMF: N-methylformamide,
DMAc: N,N-디메틸아세트아미드, CAT: 카테콜,DMAc: N, N-dimethylacetamide, CAT: catechol,
GA: 갈산, TTA: 톨리트리아졸,GA: gallic acid, TTA: tolytriazole,
BTA: 1,2,3-벤조트리아졸BTA: 1,2,3-benzotriazole
시험예: 식각 특성 평가Test Example: Evaluation of Etch Characteristics
실시예1 내지 6 및 비교예1 내지 8에서 제조한 박리액 조성물을 이용하여 하기와 같은 방법으로 구리 배선에 대한 박리력과 부식정도를 측정하였다.The peeling force and the degree of corrosion of the copper wirings were measured using the peeling liquid compositions prepared in Examples 1 to 6 and Comparative Examples 1 to 8 in the following manner.
LCD의 TFT 회로 제작에서 유리기판 위에 단일 금속막 및 다중 합금막을 각각 200 내지 500Å로 형성하고, 상부에 Cu막을 3,000Å으로 형성하였다. 그 후, 포지티브 포토레지스트를 도포 및 건조하여 포토리소그라피에 의해 패턴을 형성하고, 습식식각까지 완료한 상태의 시편을 준비하였다.In manufacturing a TFT circuit of an LCD, a single metal film and a multiple alloy film were formed on the glass substrate, respectively, from 200 to 500 mW, and a Cu film was formed at 3,000 mW on the top. Thereafter, a positive photoresist was applied and dried to form a pattern by photolithography, and a specimen was prepared by wet etching.
박리력 평가Peel force evaluation
실시예1 내지 6 및 비교예1 내지 8에서 제조한 박리액 조성물에 고형분 포토레지스트(PR)를 전체 용액 중량에 대하여 3중량% 로 용해시킨 후 50℃로 유지시키고, 여기에 상기 준비한 시편을 각각 1분간 침적시켜 레지스트 패턴을 제거하였다. 그 후, 초순수에서 60초간 세척하고 질소로 건조하였다. 건조 완료 후, 각각의 시편을 40,000 내지 80,000 배율의 전자현미경(FE-SEM)으로 포토레지스트의 박리정도를 관찰하고, 그 결과를 하기 표 2에 나타내었다. After dissolving the solid photoresist (PR) in 3% by weight relative to the total weight of the solution in the release liquid composition prepared in Examples 1 to 6 and Comparative Examples 1 to 8 and maintained at 50 ℃, the prepared specimens were The resist pattern was removed by immersion for 1 minute. Then, it was washed for 60 seconds in ultrapure water and dried with nitrogen. After the completion of drying, each specimen was observed the peeling degree of the photoresist with an electron microscope (FE-SEM) of 40,000 to 80,000 magnification, and the results are shown in Table 2 below.
부식평가 1Corrosion evaluation 1
실시예1 내지 6 및 비교예1 내지 8에서 제조한 박리액 조성물을 70℃로 유지시키고, 여기에 상기 준비한 시편을 10분 동안 침적시킨 후, 초순수에 30 초간 세척하고 질소로 건조하였다. 건조 완료 후 40,000 내지 80,000 배율의 전자현미경(FE-SEM)으로 시편의 표면, 측면, 및 단면의 부식 정도를 관찰하고, 그 결과를 하기 표 2에 나타내었다. The peeling liquid compositions prepared in Examples 1 to 6 and Comparative Examples 1 to 8 were maintained at 70 ° C., and the prepared specimens were deposited for 10 minutes, washed with ultrapure water for 30 seconds, and dried with nitrogen. After completion of drying, the degree of corrosion of the surface, side, and cross-section of the specimen was observed with an electron microscope (FE-SEM) at 40,000 to 80,000 magnification, and the results are shown in Table 2 below.
부식평가 2Corrosion Evaluation 2
실시예1 내지 6 및 비교예1 내지 8에서 제조한 박리액 조성물을 70℃로 유지시키고, 여기에 상기 준비한 시편을 각각 1분간 침적시켰다. 그 후, 초순수에 30초간 세척하고 질소로 건조하였다. 상기 스트립 공정을 3회 연속으로 실시한 후, 40,000 내지 80,000 배율의 전자현미경(FE-SEM)으로 시편의 표면, 측면, 및 단면의 부식정도를 관찰하고, 그 결과를 하기 표 2에 나타내었다. The peeling liquid compositions prepared in Examples 1 to 6 and Comparative Examples 1 to 8 were maintained at 70 ° C., and the prepared specimens were deposited for 1 minute. Thereafter, the mixture was washed with ultrapure water for 30 seconds and dried with nitrogen. After performing the strip process three times in succession, the degree of corrosion of the surface, the side, and the cross section of the specimen was observed with an electron microscope (FE-SEM) of 40,000 to 80,000 magnification, and the results are shown in Table 2 below.
※ 박리평가기준 ※ Peeling Evaluation Criteria
◎: 박리성능 우수 ○: 박리성능 양호◎: excellent peeling performance ○: good peeling performance
△: 박리성능 양호하지 못함 Х: 박리성능 불량△: poor peeling performance Х: poor peeling performance
※ 부식평가기준※ Corrosion Evaluation Criteria
◎: Cu막의 표면, 측면, Cu막과 하부막간의 갈바닉 부식 전혀 없음(Double-circle): No galvanic corrosion between the surface and side surfaces of a Cu film, and a Cu film and a lower film.
○: Cu막의 표면, 측면, Cu막과 하부막간의 갈바닉 부식 약간 있음○: slight galvanic corrosion between Cu film surface, side surface, Cu film and lower film
△: Cu막의 표면, 측면, Cu막과 하부막간의 갈바닉 부식 부분적으로 심함.(Triangle | delta): The galvanic corrosion part between the surface, the side surface of a Cu film | membrane, and a Cu film | membrane and a lower film | membrane is severe.
Х: Cu막의 표면, 측면, Cu막과 하부막간의 갈바닉 부식 전체적으로 심함.Х: The galvanic corrosion between the surface and sides of the Cu film and between the Cu film and the lower film is severe.
상기 표2에 나타낸 시험결과로부터, 본 발명의 실시예1 내지 6의 박리액 조성물은 레지스트에 대한 우수한 박리력을 가질 뿐만 아니라, Cu 표면, 측면, 그리고 Cu와 하부막의 갈바닉 효과에 의한 부식이 발생하지 않음을 확인할 수 있었다. 반면, 비교예1내지8의 박리액 조성물은 일부 조성물에서 우수한 박리력을 나타내긴 했으나, 모든 조성물에서 Cu의 표면, 측면 또는 Cu와 하부막의 갈바닉 효과에 의한 부식이 심각하였다.From the test results shown in Table 2, the peeling liquid compositions of Examples 1 to 6 of the present invention not only had excellent peeling force on the resist, but also caused corrosion due to the galvanic effect of Cu surface, side surfaces, and Cu and lower layers. It could be confirmed that not. On the other hand, although the exfoliating liquid compositions of Comparative Examples 1 to 8 exhibited excellent exfoliation force in some compositions, corrosion was serious due to the galvanic effect of the surface, side, or Cu and the underlying film of Cu in all compositions.
도 1은 본 발명의 실시예3의 박리액 조성물로 시험예에 따라 포토레지스트를 제거한 후 촬영한 전자주사현미경 사진이다.1 is an electron scanning microscope photograph taken after removing the photoresist according to the test example in the stripper composition of Example 3 of the present invention.
Claims (5)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090065464A KR20110007828A (en) | 2009-07-17 | 2009-07-17 | Stripper composition for copper or copper alloy interconnection |
CN201080032028.3A CN102472984B (en) | 2009-07-17 | 2010-07-16 | Composition for removing resists used with copper or copper alloy |
PCT/KR2010/004671 WO2011008051A2 (en) | 2009-07-17 | 2010-07-16 | Composition for removing resists used with copper or copper alloy |
TW99123629A TW201109868A (en) | 2009-07-17 | 2010-07-19 | Composition for stripping a resist for copper or copper alloy |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090065464A KR20110007828A (en) | 2009-07-17 | 2009-07-17 | Stripper composition for copper or copper alloy interconnection |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20110007828A true KR20110007828A (en) | 2011-01-25 |
Family
ID=43449995
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020090065464A KR20110007828A (en) | 2009-07-17 | 2009-07-17 | Stripper composition for copper or copper alloy interconnection |
Country Status (4)
Country | Link |
---|---|
KR (1) | KR20110007828A (en) |
CN (1) | CN102472984B (en) |
TW (1) | TW201109868A (en) |
WO (1) | WO2011008051A2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160001074A (en) * | 2014-06-26 | 2016-01-06 | 동우 화인켐 주식회사 | Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same |
KR20170106815A (en) * | 2016-03-14 | 2017-09-22 | 주식회사 이엔에프테크놀로지 | Thinner composition |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102314100A (en) * | 2011-05-10 | 2012-01-11 | 刘华礼 | PS (Photoshop) version retouching paste containing dimethyl sulfate |
CN103019049B (en) * | 2011-09-23 | 2014-10-08 | 杜邦公司 | Stripping agent containing alkylamide mixture |
GB2505476B (en) | 2012-08-31 | 2019-02-27 | Metaswitch Networks Ltd | Processing communication sessions |
KR101493294B1 (en) * | 2012-10-08 | 2015-02-16 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | Stripping and cleaning compositions for removal of thick film resist |
KR102291232B1 (en) * | 2014-09-18 | 2021-08-23 | 주식회사 이엔에프테크놀로지 | Composition for stripping a photoresist, method of forming a metal pattern using the same and method of manufacturing a display substrate using the same |
KR102414295B1 (en) * | 2016-01-22 | 2022-06-30 | 주식회사 이엔에프테크놀로지 | Photoresist stripper composition |
JP6692029B1 (en) * | 2019-03-25 | 2020-05-13 | パナソニックIpマネジメント株式会社 | Resist stripper |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3410403B2 (en) * | 1999-09-10 | 2003-05-26 | 東京応化工業株式会社 | Photoresist stripping solution and photoresist stripping method using the same |
KR101017738B1 (en) * | 2002-03-12 | 2011-02-28 | 미츠비시 가스 가가쿠 가부시키가이샤 | Photoresist stripping composition and cleaning composition |
KR100964801B1 (en) * | 2003-06-26 | 2010-06-22 | 동우 화인켐 주식회사 | Photoresist stripper composition, and exfoliation method of a photoresist using it |
TW200722505A (en) * | 2005-09-30 | 2007-06-16 | Rohm & Haas Elect Mat | Stripper |
KR100751919B1 (en) * | 2005-11-18 | 2007-08-31 | 램테크놀러지 주식회사 | Photoresist stripping composition and method of forming a pattern using the same |
US7534753B2 (en) * | 2006-01-12 | 2009-05-19 | Air Products And Chemicals, Inc. | pH buffered aqueous cleaning composition and method for removing photoresist residue |
KR101403515B1 (en) * | 2006-06-22 | 2014-06-09 | 주식회사 동진쎄미켐 | Composition for removing photoresist |
KR101051438B1 (en) * | 2007-08-29 | 2011-07-22 | 주식회사 엘지화학 | Photoresist stripper composition and photoresist stripping method using the same |
KR101488265B1 (en) * | 2007-09-28 | 2015-02-02 | 삼성디스플레이 주식회사 | Composition for stripping and stripping method |
KR20090072546A (en) * | 2007-12-28 | 2009-07-02 | 삼성전자주식회사 | Composition for removing photoresist and method of manufacturing array substrate using the same |
-
2009
- 2009-07-17 KR KR1020090065464A patent/KR20110007828A/en not_active Application Discontinuation
-
2010
- 2010-07-16 WO PCT/KR2010/004671 patent/WO2011008051A2/en active Application Filing
- 2010-07-16 CN CN201080032028.3A patent/CN102472984B/en active Active
- 2010-07-19 TW TW99123629A patent/TW201109868A/en unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160001074A (en) * | 2014-06-26 | 2016-01-06 | 동우 화인켐 주식회사 | Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same |
KR20170106815A (en) * | 2016-03-14 | 2017-09-22 | 주식회사 이엔에프테크놀로지 | Thinner composition |
Also Published As
Publication number | Publication date |
---|---|
TW201109868A (en) | 2011-03-16 |
WO2011008051A2 (en) | 2011-01-20 |
CN102472984B (en) | 2013-10-30 |
WO2011008051A3 (en) | 2011-04-21 |
CN102472984A (en) | 2012-05-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR20110007828A (en) | Stripper composition for copper or copper alloy interconnection | |
KR100846057B1 (en) | Stripper composition for photoresist | |
KR101999641B1 (en) | Microelectronic substrate cleaning compositions having copper/azole polymer inhibition | |
KR101707155B1 (en) | Stripper composition for removing photoresist and stripping method of photoresist using the same | |
KR101691850B1 (en) | A composition for striping of photoresist | |
KR101880308B1 (en) | A photoresist stripper composition for manufacturing of thin film transistor and method for manufacturing of thin film transistor using the same | |
JP4144959B2 (en) | Stripper composition for photoresist | |
KR100794465B1 (en) | Stripper composition for photoresist | |
KR100544889B1 (en) | Photoresist stripper composition | |
KR100440484B1 (en) | Photoresist stripper composition | |
KR20070073617A (en) | Stripper composition for photoresist | |
KR20100125108A (en) | Stripper composition for copper or copper alloy | |
KR101213731B1 (en) | Stripper composition for photoresist | |
KR102512488B1 (en) | Photoresist stripper composition | |
KR100568558B1 (en) | Photoresist stripper composition for copper tft | |
JP4165208B2 (en) | Resist stripping method | |
KR20100125109A (en) | Stripper composition for copper or copper alloy | |
KR100544888B1 (en) | Photoresist stripper composition for copper tft | |
KR20100011472A (en) | A cu-compatible resist removing composition | |
CN108535971B (en) | Stripping liquid composition for removing photoresist | |
KR20120136957A (en) | A detergent composition for flat panel display device | |
KR20170002933A (en) | Stripper composition | |
KR20040083157A (en) | Stripper composition for photoresist | |
KR20170107351A (en) | Resist stripper composition and method of stripping resist using the same | |
KR20110026977A (en) | Cu-compatible resist removing composition |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Withdrawal due to no request for examination |