KR101914289B1 - 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품 및 그 제조방법 - Google Patents
투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품 및 그 제조방법 Download PDFInfo
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Abstract
Description
도 2는, 종래의 방식으로 제조한 SiC 반도체 제조용 부품에 대한 주사 전자 현미경(SEM) 분석 사진이다.
도 3은, 본 발명의 일 실시예에 따른 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품의 단면도이다.
도 4는, 본 발명의 일 실시예에 따른 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품의 단면 사진이다.
도 5a는, 본 발명의 일 실시예에 따른 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품이 플라즈마 노출 환경에서 사용되어 식각된 상태의 단면도이다.
도 5b는, 본 발명의 일 실시예에 따른 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품이 플라즈마 노출 환경에서 식각된 후 재생부가 형성된 상태의 단면도이다.
도 6은, 본 발명의 일 실시예에 따른 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품이 제조되는 과정의 공정도이다.
도 7은, 본 발명의 다른 일 실시예에 따른 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품이 제조되는 과정의 공정도이다.
Claims (17)
- 둘 이상의 적층된 층을 포함하고,
상기 적층된 층의 각 층은 SiC를 포함하고, 인접한 다른 층과 서로 다른 투과도 값을 갖는 것이고,
상기 적층된 층의 각 층의 경계에서 색이 점진적으로 변하는 것인,
투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품.
- 삭제
- 제1항에 있어서,
상기 적층된 층의 각 층의 조성은 서로 동일한 것인,
투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품.
- 제1항에 있어서,
상기 적층된 층은 그라파이트 모재 상에 적층된 것인,
투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품.
- 제1항에 있어서,
상기 적층된 층의 각 층의 경계에서, 하나 이상의 비정상 결정의 성장의 단절을 포함하는 것인,
투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품.
- 제1항에 있어서,
상기 반도체 제조용 부품은, 플라즈마 처리장치 부품으로서, 링, 전극부 및 컨덕터로 이루어진 군에서 선택되는 적어도 어느 하나를 포함하는 것인,
투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품.
- 제1항 내지 제6항 중 어느 한 항에 있어서,
상기 적층된 층의 적어도 일 부분상에 형성된 SiC를 포함하는 재생부를 더 포함하는,
투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품.
- 제7항에 있어서,
상기 SiC를 포함하는 재생부 및 상기 재생부와 인접하는 적층된 층 간의 색이 상이한 것인,
투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품.
- 복수 개의 원료가스 분사 도입구를 구비하는 화학적 기상 증착 챔버 내에서,
상기 복수 개의 원료가스 분사 도입구 중 일부를 포함하는 제1도입구군을 사용해서 SiC를 포함하는 제1층을 적층하는 단계; 및
상기 복수 개의 원료가스 분사 도입구 중 다른 일부를 포함하는 제2도입구군을 사용해서 SiC를 포함하는 제2층을 적층하는 단계;를 포함하는,
제1항의 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품의 제조방법.
- 제9항에 있어서,
상기 제2층을 적층하는 단계 후에, 제3도입구군을 사용해서 SiC를 포함하는 제3층을 적층하는 단계;를 더 포함하는,
투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품의 제조방법.
- 제9항에 있어서,
각 층을 적층하는 단계 사이에 화학적 기상 증착 챔버 내에서 상기 SiC 반도체 제조용 부품을 유지하는 것인,
투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품의 제조방법.
- 제9항에 있어서,
상기 화학적 기상 증착 챔버 내에서 각각의 도입구군의 위치가 서로 다른 것인,
투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품의 제조방법.
- 제9항에 있어서,
각 층을 적층하는 단계를 수행하는 시간은 상이한 것인,
투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품의 제조방법.
- 복수 개의 원료가스 분사 도입구를 구비하는 화학적 기상 증착 챔버 내에서,
상기 복수 개의 원료가스 분사 도입구 중 일부를 포함하는 제1도입구군을 사용해서 SiC를 포함하는 제1층을 적층하는 단계; 및
상기 복수 개의 원료가스 분사 도입구 중 다른 일부를 포함하는 제2도입구군을 사용해서 SiC를 포함하는 제2층을 적층하는 단계;를 포함하는 SiC 반도체 제조용 부품의 제조방법에 있어서,
상기 SiC 반도체 제조용 부품을 건식 식각 장치에서 플라즈마를 처리하는 단계; 및
상기 SiC 반도체 제조용 부품의 적층된 층의 적어도 일 부분 상에, SiC를 포함하는 재생부를 형성하는 단계;를 더 포함하고,
상기 제1층 및 제2층은 서로 다른 투과도 값을 가지는 것이고,
상기 제1층 및 제2층의 경계에서 색이 점진적으로 변하는 것인,
투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품의 제조방법.
- 제14항에 있어서,
상기 재생부 평균 두께는, 0.1 mm 내지 3 mm 인 것인,
투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품의 제조방법.
- 제14항에 있어서,
상기 플라즈마를 처리하는 단계 및 재생부를 형성하는 단계 사이에, SiC 반도체 제조용 부품을 가공하는 단계, 사전 세정하는 단계 또는 이 둘을 더 포함하는,
투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품의 제조방법.
- 제14항에 있어서,
상기 재생부를 형성하는 단계 후에, 상기 형성된 재생부를 사후 가공하는 단계, 사후 세정하는 단계 또는 이 둘을 더 포함하는,
투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품의 제조방법.
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US16/325,877 US20190206686A1 (en) | 2016-08-18 | 2017-08-18 | Component for fabricating sic semiconductor, having plurality of layers having different transmittances, and method for manufacturing same |
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