KR101881595B1 - 불휘발성 메모리 장치 및 이의 소거 방법 - Google Patents
불휘발성 메모리 장치 및 이의 소거 방법 Download PDFInfo
- Publication number
- KR101881595B1 KR101881595B1 KR1020110139982A KR20110139982A KR101881595B1 KR 101881595 B1 KR101881595 B1 KR 101881595B1 KR 1020110139982 A KR1020110139982 A KR 1020110139982A KR 20110139982 A KR20110139982 A KR 20110139982A KR 101881595 B1 KR101881595 B1 KR 101881595B1
- Authority
- KR
- South Korea
- Prior art keywords
- memory device
- volatile memory
- erase method
- erase
- volatile
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
- G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110139982A KR101881595B1 (ko) | 2011-12-22 | 2011-12-22 | 불휘발성 메모리 장치 및 이의 소거 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110139982A KR101881595B1 (ko) | 2011-12-22 | 2011-12-22 | 불휘발성 메모리 장치 및 이의 소거 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20130072517A KR20130072517A (ko) | 2013-07-02 |
KR101881595B1 true KR101881595B1 (ko) | 2018-07-25 |
Family
ID=48987187
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020110139982A KR101881595B1 (ko) | 2011-12-22 | 2011-12-22 | 불휘발성 메모리 장치 및 이의 소거 방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR101881595B1 (ko) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200100232A (ko) | 2019-02-15 | 2020-08-26 | 한국화학연구원 | 에너지 고 효율이 가능한 ReRAM의 제조 방법 |
US11164640B2 (en) | 2019-04-30 | 2021-11-02 | Samsung Electronics Co., Ltd. | Non-volatile memory device and programming method thereof |
US11164643B2 (en) | 2019-04-30 | 2021-11-02 | Samsung Electronics Co., Ltd. | Non-volatile memory device and programming method thereof |
US11901012B2 (en) | 2019-04-30 | 2024-02-13 | Samsung Electronics Co., Ltd. | Non-volatile memory device and programming method thereof |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102358463B1 (ko) | 2014-10-20 | 2022-02-07 | 삼성전자주식회사 | 불휘발성 메모리 장치의 동작 방법 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20080102037A (ko) * | 2007-05-17 | 2008-11-24 | 주식회사 하이닉스반도체 | 멀티 레벨 셀 낸드 플래시 메모리소자의 검증방법 및포스트 프로그램 방법 |
KR100869849B1 (ko) * | 2007-06-29 | 2008-11-21 | 주식회사 하이닉스반도체 | 플래시 메모리소자의 구동방법 |
EP2165338B1 (en) * | 2007-07-03 | 2012-06-20 | SanDisk Technologies Inc. | Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing |
KR100954946B1 (ko) * | 2008-05-20 | 2010-04-27 | 주식회사 하이닉스반도체 | 불휘발성 메모리 소자의 소거 방법 |
KR20100037277A (ko) * | 2008-10-01 | 2010-04-09 | 주식회사 하이닉스반도체 | 플래시 메모리 소자의 소거 동작 방법 |
KR101068494B1 (ko) * | 2009-06-29 | 2011-09-29 | 주식회사 하이닉스반도체 | 불휘발성 메모리 소자의 소거 방법 |
KR20110001067A (ko) * | 2009-06-29 | 2011-01-06 | 주식회사 하이닉스반도체 | 불휘발성 메모리 소자의 소거 방법 |
-
2011
- 2011-12-22 KR KR1020110139982A patent/KR101881595B1/ko active IP Right Grant
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200100232A (ko) | 2019-02-15 | 2020-08-26 | 한국화학연구원 | 에너지 고 효율이 가능한 ReRAM의 제조 방법 |
US11164640B2 (en) | 2019-04-30 | 2021-11-02 | Samsung Electronics Co., Ltd. | Non-volatile memory device and programming method thereof |
US11164643B2 (en) | 2019-04-30 | 2021-11-02 | Samsung Electronics Co., Ltd. | Non-volatile memory device and programming method thereof |
US11901012B2 (en) | 2019-04-30 | 2024-02-13 | Samsung Electronics Co., Ltd. | Non-volatile memory device and programming method thereof |
Also Published As
Publication number | Publication date |
---|---|
KR20130072517A (ko) | 2013-07-02 |
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GRNT | Written decision to grant |