KR101819909B1 - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
KR101819909B1
KR101819909B1 KR1020160028320A KR20160028320A KR101819909B1 KR 101819909 B1 KR101819909 B1 KR 101819909B1 KR 1020160028320 A KR1020160028320 A KR 1020160028320A KR 20160028320 A KR20160028320 A KR 20160028320A KR 101819909 B1 KR101819909 B1 KR 101819909B1
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KR
South Korea
Prior art keywords
light emitting
electrode
semiconductor light
emitting device
exposed
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Application number
KR1020160028320A
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Korean (ko)
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KR20170105685A (en
Inventor
전수근
김경민
정겨울
Original Assignee
주식회사 세미콘라이트
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Priority to KR1020160028320A priority Critical patent/KR101819909B1/en
Priority to US16/083,024 priority patent/US11038086B2/en
Priority to PCT/KR2017/002455 priority patent/WO2017155282A1/en
Priority to CN201780016053.4A priority patent/CN109196667B/en
Publication of KR20170105685A publication Critical patent/KR20170105685A/en
Application granted granted Critical
Publication of KR101819909B1 publication Critical patent/KR101819909B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

The present disclosure relates to a semiconductor light emitting device comprising: a body including a bottom portion, the body including at least one hole formed in a bottom portion thereof; A plurality of semiconductor layers including an active layer that generates light by recombination of electrons and holes, a first electrode electrically connected to the plurality of semiconductor layers, and a second electrode electrically connected to the plurality of semiconductor layers, A semiconductor light emitting element chip having electrodes; A sealing material covering the semiconductor light emitting device chip; A first insertion electrode inserted into the body, the first insertion electrode comprising: a first insertion electrode including a plurality of exposed surfaces exposed to the outside of the body; And a first connection part located on a lower surface of the bottom of the body, the first connection part electrically connecting the first electrode of the semiconductor light emitting device chip and one of the plurality of exposed surfaces of the first inserted electrode, To a semiconductor light emitting device.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device,

The present disclosure relates generally to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device for lateral light emission with improved light extraction efficiency.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts. Also, in this specification, directional indication such as up / down, up / down, etc. is based on the drawings.

1 is a view showing an example of a conventional semiconductor light emitting device chip.

The semiconductor light emitting device chip includes a buffer layer 20, a first semiconductor layer 30 (e.g., an n-type GaN layer) 30 having a first conductivity, An active layer 40 (e.g., INGaN / (In) GaN MQWs) that generates light through recombination of holes, and a second semiconductor layer 50 (e.g., a p-type GaN layer) having a second conductivity different from the first conductivity A light transmitting conductive film 60 for current diffusion and an electrode 70 serving as a bonding pad are formed on the first semiconductor layer 30 and the first semiconductor layer 30 is etched to serve as a bonding pad Electrode 80 (e.g., a Cr / Ni / Au laminated metal pad) is formed. The semiconductor light emitting device of the type shown in FIG. 1 is called a lateral chip in particular. Here, when the growth substrate 10 side is electrically connected to the outside, it becomes a mounting surface.

2 is a view showing another example of the semiconductor light-emitting device chip disclosed in U.S. Patent No. 7,262,436. For ease of explanation, the drawing symbols have been changed.

The semiconductor light emitting device chip includes a growth substrate 10, a growth substrate 10, a first semiconductor layer 30 having a first conductivity, an active layer 40 for generating light through recombination of electrons and holes, And a second semiconductor layer 50 having a second conductivity different from that of the second semiconductor layer 50 are deposited in this order on the substrate 10, and three layers of electrode films 90, 91, and 92 for reflecting light toward the growth substrate 10 are formed have. The first electrode film 90 may be an Ag reflective film, the second electrode film 91 may be an Ni diffusion prevention film, and the third electrode film 92 may be an Au bonding layer. An electrode 80 functioning as a bonding pad is formed on the first semiconductor layer 30 exposed by etching. Here, when the electrode film 92 side is electrically connected to the outside, it becomes a mounting surface. The semiconductor light emitting device chip of the type shown in FIG. 2 is called a flip chip. In the case of the flip chip shown in FIG. 2, the electrodes 80 formed on the first semiconductor layer 30 are lower in height than the electrode films 90, 91, and 92 formed on the second semiconductor layer, . Here, the height reference may be a height from the growth substrate 10.

3 is a view showing an example of a conventional semiconductor light emitting device.

The semiconductor light emitting device 100 is provided with lead frames 110 and 120, a mold 130, and a vertical type light emitting chip 150 in a cavity 140. The cavity 140 is formed in the cavity 130, Is filled with an encapsulant 170 containing the wavelength converting material 160. [ The lower surface of the vertical type semiconductor light emitting device chip 150 is electrically connected directly to the lead frame 110 and the upper surface thereof is electrically connected to the lead frame 120 by the wire 180. A part of the light emitted from the vertical type semiconductor light emitting device chip 150 excites the wavelength conversion material 160 to produce light of a different color, and two different lights may be mixed to form white light. For example, the semiconductor light emitting device chip 150 generates blue light, and the light generated by exciting the wavelength conversion material 160 is yellow light, and blue light and yellow light may be mixed to form white light. FIG. 3 shows a semiconductor light emitting device using the vertical semiconductor light emitting device chip 150, but it is also possible to manufacture the semiconductor light emitting device of FIG. 3 using the semiconductor light emitting device chip shown in FIGS. 1 and 2 have. However, the semiconductor light emitting device 100 shown in FIG. 3 requires bonding between the semiconductor light emitting device chip 150 and the lead frames 110 and 120, and in particular, when the flip chip shown in FIG. 2 is used, , 120), there is a problem that the amount of light emitted from the flip chip is likely to be lost by a bonding material (for example, solder paste). Further, due to the heat generated during the SMT process of bonding the semiconductor light emitting device 100 to an external substrate (e.g., a PCB substrate, a submount, and the like), there is a problem in bonding between the semiconductor light emitting device chip 150 and the lead frames 110 and 120 .

The present disclosure provides a semiconductor light emitting device in which an electrode of a semiconductor light emitting device chip used in a semiconductor light emitting device is directly bonded to an external substrate. A semiconductor light emitting device which does not require bonding between the lead frame and the flip chip so that there is no loss in the amount of light emitted from the flip chip due to the bonding between the lead frame and the flip chip even though the flip chip is used, .

This will be described later in the Specification for Enforcement of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, in a semiconductor light emitting device, a body including a bottom portion, the body including at least one hole formed in a bottom portion thereof; A plurality of semiconductor layers including an active layer that generates light by recombination of electrons and holes, a first electrode electrically connected to the plurality of semiconductor layers, and a second electrode electrically connected to the plurality of semiconductor layers, A semiconductor light emitting element chip having electrodes; A sealing material covering the semiconductor light emitting device chip; A first insertion electrode inserted into the body, the first insertion electrode comprising: a first insertion electrode including a plurality of exposed surfaces exposed to the outside of the body; And a first connection part electrically connecting one of the plurality of exposed surfaces of the insertion electrode to the first electrode of the semiconductor light emitting device chip, the first connection part being located on a bottom surface of the body bottom part, A light emitting element is provided.

This will be described later in the Specification for Enforcement of the Invention.

1 is a view showing an example of a conventional semiconductor light emitting device chip,
2 is a view showing another example of the semiconductor light-emitting device chip disclosed in U.S. Patent No. 7,262,436,
3 is a view showing an example of a conventional semiconductor light emitting device,
4 is a view showing an example of a semiconductor light emitting device according to the present disclosure,
5 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
6 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
7 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
8 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
9 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
10 is a view showing an example of using the semiconductor light emitting device according to the present disclosure,
11 is a view showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure,
12 is a view showing another example of a method for manufacturing a semiconductor light emitting device according to the present disclosure;

The present disclosure will now be described in detail with reference to the accompanying drawings.

4 is a view showing an example of a semiconductor light emitting device according to the present disclosure.

Fig. 4 (a) is a perspective view, and Fig. 4 (b) is a sectional view along AA '.

The semiconductor light emitting device 200 includes a body 210, a semiconductor light emitting device chip 220, and an encapsulant 230.

The body 210 includes a sidewall 211 and a bottom 212. The bottom portion 212 includes a hole 213. And a cavity 214 formed by the side wall 211 and the bottom portion 212. The bottom portion 212 includes a top surface 215 and a bottom surface 216. The side wall 211 includes an outer surface 217 and an inner surface 218. The height H of the side wall 211 may be less than the length L of the bottom portion 212. [ For example, the height H of the side wall 211 may be 0.1 mm or more and 0.6 mm or less, and the length L of the bottom portion 212 may be 0.5 mm or more. The side wall 211 may also be omitted if necessary (not shown). The size of the hole 213 may be approximately the same as the size of the semiconductor light emitting device chip 220 or 1.5 times the size of the semiconductor light emitting device chip 220. Further, the side surface 240 of the hole 213 is preferably inclined for improving the light extraction efficiency.

The semiconductor light emitting device chip 220 is located in the hole 213. The semiconductor light emitting device chip 220 may be a lateral chip, a vertical chip, and a flip chip. However, the flip chip is preferable in that the electrode 221 of the semiconductor light emitting device chip is exposed in the direction of the bottom surface 212 of the body 210 in the present disclosure. The height 219 of the bottom 212 is preferably lower than the height 222 of the semiconductor light emitting device chip 220. If the height 219 of the bottom part 212 is higher than the height 222 of the semiconductor light emitting device chip 220, the light extraction efficiency of the semiconductor light emitting device 200 may deteriorate. However, the height 219 of the bottom part 212 may be higher than the height of the semiconductor light emitting device chip 220 in consideration of the optical path and the like. The height 219 of the bottom portion 212 and the height 222 of the semiconductor light emitting device chip 220 can be measured based on the bottom surface 216 of the bottom portion 212. The height 222 of the semiconductor light emitting device chip 220 may be 0.05 mm or more to 0.5 mm or less. The height 219 of the bottom portion 212 may be greater than or equal to 0.08 mm and less than or equal to 0.4 mm.

The encapsulant 230 is provided at least in the cavity 214 to cover the semiconductor light emitting device chip 220 so that the semiconductor light emitting device chip 220 located in the hole 213 can be fixed to the body 210. The sealing material 230 has a light-transmitting property, and may be made of one of, for example, an epoxy resin and a silicone resin. And may include a wavelength conversion material 231 if necessary. The wavelength converting material 231 may be any material as long as it converts light generated from the active layer of the semiconductor light emitting device chip 220 into light having a different wavelength (for example, pigment, dye, etc.) For example, YAG, (Sr, Ba, Ca) 2 SiO 4 : Eu, etc.) is preferably used. Further, the wavelength converting material 231 can be determined according to the color of light emitted from the semiconductor light emitting element, and is well known to those skilled in the art.

5 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 300 includes a bonding portion 330. Except for the junction 330, has the same characteristics as the semiconductor light emitting device 200 described in FIG. The joining portion 330 is located on the lower surface 312 of the bottom portion 311 of the body 310. But is spaced apart from the electrode 321 of the semiconductor light emitting device chip 320 exposed in the direction of the lower surface 312 of the bottom portion 311 of the body 310. When the semiconductor light emitting device 300 is bonded to the external substrate due to the bonding portion 330, the bonding strength can be improved as compared with the case where the semiconductor light emitting device 300 is bonded only by the electrode 321. The junction 330 may be a metal. For example, the junction 330 may be one of silver (Ag), copper (Cu), and gold (Au). The abutment 330 may also be a combination of two or more metals. For example, a combination of nickel (Ni) and copper, a combination of chromium (Cr) and copper, a combination of titanium (Ti) and copper. Various combinations of junctions 330 are possible to the extent that those skilled in the art can easily modify them. 5 (b) is a bottom view of FIG. 5 (a), and the arrangement of the electrode 321 and the bonding portion 330 can be confirmed. Although not shown, if necessary, the bonding portion 330 may be disposed in contact with the electrode 321 of the semiconductor light emitting device chip 320 to perform an electrode function.

6 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 400 includes a reflective material 430 between the bottom portion 411 of the body 410 and the semiconductor light emitting device chip 420. Except for the reflective material 430, has the same characteristics as the semiconductor light emitting device 300 described in FIG. The reflective material 430 is positioned on the side surface of the semiconductor light emitting device chip 420 to reflect the light emitted from the side surface of the semiconductor light emitting device chip 420 to improve the light extraction efficiency of the semiconductor light emitting device 400. Reflective material 430 is preferably a white reflective material. For example, a white silicone resin. The reflective material 430 may be positioned between the reflective material 430 and the semiconductor light emitting device chip 420 as shown in FIG. 6 (b).

7 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 500 includes a reflective layer 530 on at least one of the inner surface 513 of the side wall 511 of the body 510 and the upper surface 514 of the bottom portion 512. Except for the reflective layer 530, has the same characteristics as the semiconductor light emitting device 300 described in FIG. The reflective layer 530 may be formed on the entire upper surface 514 of the bottom portion 512 of the body 510. The reflective layer 530 may be, for example, aluminum (Al), silver (Ag), distributed Bragg reflector (DBR), high reflective white reflective material, or the like. In particular, since the semiconductor light emitting device chip 150 must be bonded to the lead frames 110 and 120 in the conventional semiconductor light emitting device 100 as shown in FIG. 3, Can not be formed on the entire upper surface of the lead frames 110 and 120 to be bonded due to an electric short problem. However, in the present disclosure, since there is no lead frame bonded to the semiconductor light emitting device chip 520 and the semiconductor light emitting device chip 520 is not disposed on the upper surface 514 of the bottom portion 512, A reflective layer 530 may be formed on the entire upper surface 514 of the bottom portion 512. The light extraction efficiency of the semiconductor light emitting device 500 can be improved by forming the reflective layer 530 of high reflection efficiency on the entire upper surface 514 of the bottom portion 512. Although not shown, the reflective layer 530 may be located on the side of the hole.

8 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 600 includes a plurality of holes 612 in a bottom portion 611 of the body 610 and the semiconductor light emitting device chip 620 is positioned in each hole 612. The semiconductor light emitting device 300 has the same characteristics as the semiconductor light emitting device 300 described in FIG. 5 except that the semiconductor light emitting device chip 620 is located in the plurality of holes 612 and the holes 612. Although two holes are shown in Fig. 8, two or more holes are possible. Further, the semiconductor light emitting device chips 620 located in the respective holes 612 can emit different colors.

9 is a view showing another example of the semiconductor light emitting device according to the present disclosure. 9 (a) and 9 (d) are perspective views, and FIGS. 9 (b) and 9 (c) are rear views.

The semiconductor light emitting device 700 includes a first connection electrode 730 inserted in the body 710, a second insertion electrode 740, a first connection part 712 located at the bottom 711 of the body 710, (750) and a second connection portion (751). The first insertion electrode 730 and the second insertion electrode 740 include a plurality of exposed surfaces 731, 732, 741, and 742 exposed to the outside of the body 710. The plurality of exposed surfaces 731, 732, 741 and 742 of the first intercalating electrode 730 and the second intercalating electrode 740 are exposed on the lower surface 712 of the bottom 711 of the body 710, Exposed surfaces 731 and 741 and second exposed surfaces 732 and 742 exposed in the direction of the side surface 713 of the body 710. [ In FIG. 9 (b), the number of exposed surfaces of the first insertion electrode 730 and the second insertion electrode 740 is two, but two or more are possible. For example, three exposed surfaces 731, 732, 733, 741, 742, and 743 of the first insertion electrode 730 and the second insertion electrode 740, respectively, as shown in FIG. 9C. That is, the exposed surfaces 732, 733, 742, and 743 exposed in both lateral directions may include the first insertion electrode 730 and the second insertion electrode 740. Alternatively, the insertion electrodes 730 and 740 may be formed as shown in FIG. 9 (d). The second exposed surface 732 of the first intercalating electrode 730 and the second exposed surface 742 of the second intercalating electrode 740 are exposed in the same lateral direction of the body 710 and electrically connected to the outside. The outside may be a PCB substrate or a submount. The second exposed surface 732 of the first intercalating electrode 730 and the second exposed surface 742 of the second intercalating electrode 740 are electrically connected to the outside will be described again with reference to FIG. The first connection part 750 and the second connection part 751 are positioned on the lower surface 712 of the bottom part 711 of the body 710 and are electrically connected to the semiconductor light emitting device chip 720 and the first insertion electrode 730, Electrically connects one of the plurality of exposed surfaces of the first electrode 740. The first connection part 750 electrically connects the first electrode 721 of the semiconductor light emitting device chip 720 to the first exposed surface 731 of the first insertion electrode 730 and the second connection part 751, The second electrode 722 of the semiconductor light emitting device chip 720 and the first exposed surface 741 of the second interdigital electrode 740 are electrically connected to each other. Further, an insulating layer 752 may be additionally provided between the first connection part 750 and the second connection part 751 to prevent a short circuit. In Fig. 9, there are two insertion electrodes and one connection, but one case is included in the scope of the present disclosure. Except as described in FIG. 9, the semiconductor light emitting device 700 is substantially the same as the semiconductor light emitting device 200 described in FIG.

10 is a view showing an example of using the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 700 may be used as a semiconductor light emitting device for side light emission. A conventional semiconductor light emitting device for side emission is disclosed in Korean Patent Laid-Open No. 10-2007-0098180. The semiconductor light emitting device 700 is electrically connected to the first exposed surface 732 of the first interdigital electrode 730 and the first electrode 761 of the external substrate 760 such as a PCB substrate or a submount, The second exposed surface 742 of the second interdigital electrode 740 is electrically connected to the second electrode 762 of the second interdigital electrode 760. That is, the semiconductor light emitting device 700 can be used as a semiconductor light emitting device for lateral light emission by using the first insertion electrode 730 and the second insertion electrode 740. For ease of understanding, the first insertion electrode 730 and the second insertion electrode 740 inserted in the body are indicated by dotted lines. 9 and 10, electricity passes through the first electrode 761 of the external substrate 760, passes through the second exposed surface 732 of the first inserted electrode 730, passes through the second exposed surface 732 of the first inserted electrode 730, And is transmitted to the first electrode 721 of the semiconductor light emitting device chip 720 via the first connection portion 750 through the first exposed surface 731. [ In addition, the process of transferring electricity to the second electrode 722 of the semiconductor light emitting device chip 720 is also the same. The semiconductor light emitting device chip 720 emits light, and in particular, can be used as a semiconductor light emitting device for side emission that emits light in the lateral direction.

11 is a view showing a method of manufacturing a semiconductor light emitting device according to the present disclosure.

First, a body 800 including a hole 812 formed in the bottom portion 810 and an insertion electrode space 813 in which the insertion electrode 814 is formed is prepared (S1). The body 800 can be obtained through injection molding. Alternatively, although not shown, a conductive rod such as copper (Cu) is inserted into the insertion electrode space 813 at the time of injection molding, and injection molding is performed to obtain a body having the insertion electrode 814 inserted therein. Then, the semiconductor light emitting device chip 820 is placed (S2). Then, the semiconductor light emitting device chip 820 is covered with the sealing material 830 to fix the semiconductor light emitting device chip 820 to the body 800 (S3). The temporary fixing plate 840 may be used to prevent the semiconductor light emitting device chip 820 from moving before the semiconductor light emitting device chip 820 is fixed by the sealing material 830. [ The temporary fixing plate 840 can be made of a general adhesive tape. For example, a blue tape. If there is a temporary fixing plate 840 thereafter, the temporary fixing plate 840 is removed, and conductive material is filled in the insertion electrode space 813 (S4). Filling of the conductive material in the interdigital electrode space 813 may be performed in step S1. Of course, when injection molding is performed in a state where a conductive rod such as copper is inserted into the insertion electrode space 813 at the time of injection molding, since the insertion electrode is already formed, it is not necessary to fill the conductive material separately. Thereafter, a connecting portion 850 is formed (S5). The connection portion 850 may be formed by depositing a conductive material or plating. The connection portion 850 is formed to electrically connect the exposed surface of the insertion electrode 814 and the electrode 821 of the semiconductor light emitting device chip 820. For the sake of clarity, step S5 is a rear view of the lower surface of the body 800. The order of the method of manufacturing a semiconductor light emitting device according to the present disclosure can be included in the scope of the present disclosure to the extent that those skilled in the art can easily change it.

12 is a view showing another manufacturing method of the semiconductor light emitting device according to the present disclosure.

12, a plurality of semiconductor light emitting devices 900 can be manufactured at one time according to the manufacturing method described in FIG. For example, after a substrate 920 having a plurality of bodies 910 is obtained through injection molding, a plurality of semiconductor light emitting devices 900 can be manufactured at one time according to the manufacturing method described in FIG. Thereafter, the semiconductor light emitting device 900 may be cut according to the cutting line 930.

 Various embodiments of the present disclosure will be described.

(1) A semiconductor light emitting device comprising: a body including a bottom portion, the body having at least one hole formed in a bottom portion thereof; A plurality of semiconductor layers including an active layer that generates light by recombination of electrons and holes, a first electrode electrically connected to the plurality of semiconductor layers, and a second electrode electrically connected to the plurality of semiconductor layers, A semiconductor light emitting element chip having electrodes; A sealing material covering the semiconductor light emitting device chip; A first insertion electrode inserted into the body, the first insertion electrode comprising: a first insertion electrode including a plurality of exposed surfaces exposed to the outside of the body; And a first connection part located on a lower surface of the bottom of the body, the first connection part electrically connecting the first electrode of the semiconductor light emitting device chip and one of the plurality of exposed surfaces of the first inserted electrode, .

(2) The semiconductor light emitting device of claim 1, wherein the first electrode of the semiconductor light emitting device chip is exposed in a bottom direction of the bottom portion and electrically connected to the first connection portion.

(3) The semiconductor light emitting device according to (3), wherein the plurality of exposed surfaces of the first insert electrode are a first exposed surface exposed in a bottom direction of the bottom portion and a second exposed surface exposed in a lateral direction of the body.

(4) The semiconductor light emitting device of claim 1, wherein the first connection portion electrically connects the first exposed surface of the first interposing electrode and the first electrode of the semiconductor light emitting device chip.

(5) The semiconductor light emitting device according to (1), wherein the second exposed surface of the first interdigital electrode is electrically connected to the outside.

(6) a second insertion electrode inserted into the body, the second insertion electrode including a second insertion electrode including a plurality of exposed surfaces exposed to the outside of the body, And a second exposed surface exposed in a lateral direction of the body.

(7) The semiconductor light emitting device according to (7), wherein the second exposed surface of the first insert electrode and the second exposed surface of the second insert electrode are exposed in the same lateral direction of the body.

(8) a second connection part located on a lower surface of a bottom part of the body, the second connection part electrically connecting the second electrode of the semiconductor light emitting device chip and the first exposed surface of the second insertion electrode, And the second electrode of the chip is exposed in the bottom direction of the bottom portion.

(9) An insulating layer positioned between the first connection portion and the second connection portion.

(10) A semiconductor light emitting device, comprising: a body including a side wall and a cavity formed by side walls and a bottom;

(11) a second insert electrode inserted into the body, the second insert electrode having a first exposed surface exposed in a bottom direction of the bottom portion and a second exposed surface exposed in a lateral direction of the body, And a second connection part electrically connected to the first exposed surface of the second interposed electrode and the second electrode exposed in the direction of the bottom of the semiconductor light emitting device chip, The first connection portion electrically connecting the first exposed surface of the first interposing electrode and the first electrode of the semiconductor light emitting device chip and electrically connecting the second exposed surface of the first interposing electrode and the second exposed surface of the second interposing electrode, And the exposed surface is exposed in the same lateral direction of the body.

According to the present disclosure, a semiconductor light emitting element in which an electrode of a semiconductor light emitting element chip is directly bonded to an external substrate can be obtained.

Also, according to the present disclosure, it is possible to obtain a semiconductor light emitting device which does not require bonding between the lead frame and the flip chip so that there is no loss in the amount of light emitted from the flip chip due to the bonding between the lead frame and the flip chip.

Further, according to the present disclosure, a semiconductor light emitting element of side luminescence can be obtained.

Semiconductor light emitting devices: 100, 200, 300, 400, 500, 600, 700, 900
Semiconductor light emitting device chips: 150, 220, 320, 420, 520, 620, 720, 820
Insertion electrodes: 730, 740, 814

Claims (11)

In the semiconductor light emitting device,
A body including a side wall and a bottom portion, the side wall including an outer surface and an inner surface, the bottom portion including an upper surface and a lower surface, the inner surface of the side wall and at least one A body having a hole;
A plurality of semiconductor layers including an active layer that generates light by recombination of electrons and holes, a first electrode electrically connected to the plurality of semiconductor layers, and a second electrode electrically connected to the plurality of semiconductor layers, A semiconductor light emitting element chip having electrodes;
A sealing material covering the semiconductor light emitting device chip;
A first insertion electrode inserted into the body, the first insertion electrode comprising: a first insertion electrode including a plurality of exposed surfaces exposed to the outside of the body;
A first connection part electrically connecting one of the plurality of exposed surfaces of the first interdigital electrode and the first electrode of the semiconductor light emitting device chip, the first connection part being located on the lower surface of the body bottom part; And
And a cavity formed by an inner surface of the side wall and an upper surface of the bottom portion,
And the height of the bottom portion is lower than the height of the side wall. The method according to claim 1,
Wherein the first electrode of the semiconductor light emitting device chip is exposed in a bottom direction of the bottom portion and is electrically connected to the first connection portion. The method of claim 2,
A second insertion electrode inserted into the body, the second insertion electrode including a plurality of exposed surfaces exposed to the outside of the body,
The plurality of exposed surfaces of the first insertion electrode are a first exposed surface exposed in the bottom direction of the bottom portion and a second exposed surface exposed in the lateral direction of the body,
Wherein the plurality of exposed surfaces of the second insert electrode are a first exposed surface exposed in a bottom direction of the bottom portion and a second exposed surface exposed in a lateral direction of the body. The method of claim 3,
And a second connecting portion electrically connecting one of the plurality of exposed surfaces of the second electrode of the semiconductor light emitting device chip and the second intercalating electrode to the second connecting portion located on the lower surface of the bottom portion of the body,
The first connection portion electrically connects the first exposed surface of the first insertion electrode and the first electrode of the semiconductor light emitting device chip,
And the second connection portion electrically connects the first exposed surface of the second insertion electrode to the second electrode of the semiconductor light emitting device chip. The method of claim 3,
The second exposed surface of the first insert electrode and the second exposed surface of the second insert electrode are electrically connected to the outside,
Wherein the second exposed surface of the first intercalating electrode and the second exposed surface of the second intercalating electrode are exposed in the same lateral direction of the body. delete delete delete The method of claim 4,
And an insulating layer disposed between the first connection portion and the second connection portion. delete delete
KR1020160028320A 2016-03-07 2016-03-09 Semiconductor light emitting device KR101819909B1 (en)

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Application Number Priority Date Filing Date Title
KR1020160028320A KR101819909B1 (en) 2016-03-09 2016-03-09 Semiconductor light emitting device
US16/083,024 US11038086B2 (en) 2016-03-07 2017-03-07 Semiconductor light-emitting element and manufacturing method therefor
PCT/KR2017/002455 WO2017155282A1 (en) 2016-03-07 2017-03-07 Semiconductor light-emitting element and manufacturing method therefor
CN201780016053.4A CN109196667B (en) 2016-03-07 2017-03-07 Semiconductor light emitting element and method for manufacturing the same

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