KR101718515B1 - 화이어 챔버, 플라즈마 발생기, 플라즈마 발생 방법 - Google Patents

화이어 챔버, 플라즈마 발생기, 플라즈마 발생 방법 Download PDF

Info

Publication number: KR101718515B1
Authority: KR; South Korea
Prior art keywords: plasma; ignition; chamber; delete delete; gas
Prior art date: 2014-10-27

Application number

KR1020140145714A

Other languages

English (en)

Korean (ko)

Other versions

KR20160049220A (ko

Inventor

최도현

Original Assignee

최도현

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2014-10-27

Filing date

2014-10-27

Publication date

2017-03-22

2014-10-27 Application filed by 최도현 filed Critical 최도현

2014-10-27 Priority to KR1020140145714A priority Critical patent/KR101718515B1/ko

2015-10-22 Priority to TW104134679A priority patent/TW201628053A/zh

2015-10-27 Priority to PCT/KR2015/011394 priority patent/WO2016068586A1/fr

2016-05-09 Publication of KR20160049220A publication Critical patent/KR20160049220A/ko

2017-03-22 Application granted granted Critical

2017-03-22 Publication of KR101718515B1 publication Critical patent/KR101718515B1/ko

Links

238000000034 method Methods 0.000 title claims description 30
238000010168 coupling process Methods 0.000 claims description 13
238000005859 coupling reaction Methods 0.000 claims description 13
230000008878 coupling Effects 0.000 claims description 12
238000009413 insulation Methods 0.000 claims description 5
238000004804 winding Methods 0.000 claims description 5
230000001681 protective effect Effects 0.000 claims description 2
239000012510 hollow fiber Substances 0.000 claims 1
238000010891 electric arc Methods 0.000 abstract description 6
239000002245 particle Substances 0.000 abstract description 5
239000007789 gas Substances 0.000 description 73
238000009616 inductively coupled plasma Methods 0.000 description 12
238000012986 modification Methods 0.000 description 9
230000004048 modification Effects 0.000 description 9
238000012545 processing Methods 0.000 description 5
230000006698 induction Effects 0.000 description 4
238000010586 diagram Methods 0.000 description 3
238000004519 manufacturing process Methods 0.000 description 3
239000004065 semiconductor Substances 0.000 description 3
238000004380 ashing Methods 0.000 description 2
238000004140 cleaning Methods 0.000 description 2
239000004020 conductor Substances 0.000 description 2
239000003989 dielectric material Substances 0.000 description 2
230000001939 inductive effect Effects 0.000 description 2
150000002500 ions Chemical class 0.000 description 2
239000000758 substrate Substances 0.000 description 2
238000010276 construction Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000000151 deposition Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
238000005530 etching Methods 0.000 description 1
230000005284 excitation Effects 0.000 description 1
239000011521 glass Substances 0.000 description 1
239000012811 non-conductive material Substances 0.000 description 1
229920002120 photoresistant polymer Polymers 0.000 description 1
238000012827 research and development Methods 0.000 description 1
235000012431 wafers Nutrition 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32899—Multiple chambers, e.g. cluster tools
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Plasma & Fusion (AREA)
Analytical Chemistry (AREA)
Chemical & Material Sciences (AREA)
General Physics & Mathematics (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Computer Hardware Design (AREA)
Manufacturing & Machinery (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Electromagnetism (AREA)
Spectroscopy & Molecular Physics (AREA)
Plasma Technology (AREA)

KR1020140145714A 2014-10-27 2014-10-27 화이어 챔버, 플라즈마 발생기, 플라즈마 발생 방법 KR101718515B1 (ko)

Priority Applications (3)

Application Number	Priority Date	Filing Date	Title
KR1020140145714A KR101718515B1 (ko)	2014-10-27	2014-10-27	화이어 챔버, 플라즈마 발생기, 플라즈마 발생 방법
TW104134679A TW201628053A (zh)	2014-10-27	2015-10-22	火室、電漿產生器、及電漿產生方法
PCT/KR2015/011394 WO2016068586A1 (fr)	2014-10-27	2015-10-27	Chambre de chauffe, générateur de plasma, et procédé de génération de plasma

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR1020140145714A KR101718515B1 (ko)	2014-10-27	2014-10-27	화이어 챔버, 플라즈마 발생기, 플라즈마 발생 방법

Publications (2)

Publication Number	Publication Date
KR20160049220A KR20160049220A (ko)	2016-05-09
KR101718515B1 true KR101718515B1 (ko)	2017-03-22

Family

ID=55857828

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1020140145714A KR101718515B1 (ko)	2014-10-27	2014-10-27	화이어 챔버, 플라즈마 발생기, 플라즈마 발생 방법

Country Status (3)

Country	Link
KR (1)	KR101718515B1 (fr)
TW (1)	TW201628053A (fr)
WO (1)	WO2016068586A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2019108855A1 (fr) *	2017-11-30	2019-06-06	Corning Incorporated	Source de plasma rf linéaire à pression atmosphérique de modification et de traitement de surface

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TWI829156B (zh) *	2021-05-25	2024-01-11	大陸商北京屹唐半導體科技股份有限公司	電漿源陣列、電漿處理設備、電漿處理系統以及用於在電漿處理設備中加工工件的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2009283435A (ja) *	2008-05-20	2009-12-03	New Power Plasma Co Ltd	内蔵変圧器を有するプラズマ反応器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0831417B2 (ja) *	1988-12-02	1996-03-27	工業技術院長	プラズマ加工堆積装置
JP2965293B1 (ja) *	1998-11-10	1999-10-18	川崎重工業株式会社	電子ビーム励起プラズマ発生装置
KR20110135783A (ko) *	2010-06-11	2011-12-19	주식회사 밀레니엄투자	플라즈마를 이용한 선형 기화증착기
KR20120086135A (ko) *	2011-01-25	2012-08-02	피에스케이 주식회사	플라스마 생성 유닛 및 이를 이용하는 기판 처리 장치 및 방법

2014
- 2014-10-27 KR KR1020140145714A patent/KR101718515B1/ko active IP Right Grant
2015
- 2015-10-22 TW TW104134679A patent/TW201628053A/zh unknown
- 2015-10-27 WO PCT/KR2015/011394 patent/WO2016068586A1/fr active Application Filing

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2009283435A (ja) *	2008-05-20	2009-12-03	New Power Plasma Co Ltd	内蔵変圧器を有するプラズマ反応器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2019108855A1 (fr) *	2017-11-30	2019-06-06	Corning Incorporated	Source de plasma rf linéaire à pression atmosphérique de modification et de traitement de surface
US11533801B2 (en)	2017-11-30	2022-12-20	Corning Incorporated	Atmospheric pressure linear rf plasma source for surface modification and treatment

Also Published As

Publication number	Publication date
KR20160049220A (ko)	2016-05-09
TW201628053A (zh)	2016-08-01
WO2016068586A1 (fr)	2016-05-06

Legal Events

Date	Code	Title	Description
2014-10-27	A201	Request for examination
2016-01-11	E902	Notification of reason for refusal
2016-03-10	AMND	Amendment
2016-10-25	E601	Decision to refuse application
2016-10-25	X091	Application refused [patent]
2016-11-21	AMND	Amendment
2016-12-16	X701	Decision to grant (after re-examination)
2020-03-10	FPAY	Annual fee payment	Payment date: 20200311 Year of fee payment: 4

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