KR101679030B1 - 레지스트 제거용 조성물 - Google Patents

레지스트 제거용 조성물 Download PDF

Info

Publication number: KR101679030B1
Authority: KR; South Korea
Prior art keywords: resist; solvent; composition; ether; weight
Prior art date: 2009-12-16

Application number

KR1020090125458A

Other languages

English (en)

Korean (ko)

Other versions

KR20110068483A (ko

Inventor

신성건

김병욱

윤석일

정종현

허순범

정세환

장두영

권오환

박선주

Original Assignee

주식회사 동진쎄미켐

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2009-12-16

Filing date

2009-12-16

Publication date

2016-11-23

2009-12-16 Application filed by 주식회사 동진쎄미켐 filed Critical 주식회사 동진쎄미켐

2009-12-16 Priority to KR1020090125458A priority Critical patent/KR101679030B1/ko

2010-12-14 Priority to TW099143726A priority patent/TWI529503B/zh

2010-12-15 Priority to CN201010594494.2A priority patent/CN102103334B/zh

2011-06-22 Publication of KR20110068483A publication Critical patent/KR20110068483A/ko

2016-11-23 Application granted granted Critical

2016-11-23 Publication of KR101679030B1 publication Critical patent/KR101679030B1/ko

Links

239000000203 mixture Substances 0.000 title claims abstract description 57
229920002120 photoresistant polymer Polymers 0.000 title description 3
238000005260 corrosion Methods 0.000 claims abstract description 32
230000007797 corrosion Effects 0.000 claims abstract description 32
150000001875 compounds Chemical class 0.000 claims abstract description 20
WRYCSMQKUKOKBP-UHFFFAOYSA-N Imidazolidine Chemical compound C1CNCN1 WRYCSMQKUKOKBP-UHFFFAOYSA-N 0.000 claims abstract description 17
-1 an imidazolidine compound Chemical class 0.000 claims description 31
239000002798 polar solvent Substances 0.000 claims description 28
239000002904 solvent Substances 0.000 claims description 18
SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 16
238000000034 method Methods 0.000 claims description 15
HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 11
OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 9
IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 7
125000004432 carbon atom Chemical group C* 0.000 claims description 7
125000002768 hydroxyalkyl group Chemical group 0.000 claims description 4
239000003112 inhibitor Substances 0.000 claims description 4
GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 3
SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 3
XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 claims description 3
POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 3
FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 3
XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 3
239000000126 substance Substances 0.000 claims description 3
IQXXEPZFOOTTBA-UHFFFAOYSA-N 1-benzylpiperazine Chemical compound C=1C=CC=CC=1CN1CCNCC1 IQXXEPZFOOTTBA-UHFFFAOYSA-N 0.000 claims description 2
JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 claims description 2
FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 claims description 2
MTVLEKBQSDTQGO-UHFFFAOYSA-N 2-(2-ethoxypropoxy)propan-1-ol Chemical compound CCOC(C)COC(C)CO MTVLEKBQSDTQGO-UHFFFAOYSA-N 0.000 claims description 2
CUDYYMUUJHLCGZ-UHFFFAOYSA-N 2-(2-methoxypropoxy)propan-1-ol Chemical compound COC(C)COC(C)CO CUDYYMUUJHLCGZ-UHFFFAOYSA-N 0.000 claims description 2
DJCYDDALXPHSHR-UHFFFAOYSA-N 2-(2-propoxyethoxy)ethanol Chemical compound CCCOCCOCCO DJCYDDALXPHSHR-UHFFFAOYSA-N 0.000 claims description 2
XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 2
ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 2
WFCSWCVEJLETKA-UHFFFAOYSA-N 2-piperazin-1-ylethanol Chemical compound OCCN1CCNCC1 WFCSWCVEJLETKA-UHFFFAOYSA-N 0.000 claims description 2
YEYKMVJDLWJFOA-UHFFFAOYSA-N 2-propoxyethanol Chemical compound CCCOCCO YEYKMVJDLWJFOA-UHFFFAOYSA-N 0.000 claims description 2
239000000654 additive Substances 0.000 claims description 2
YZTJYBJCZXZGCT-UHFFFAOYSA-N phenylpiperazine Chemical compound C1CNCCN1C1=CC=CC=C1 YZTJYBJCZXZGCT-UHFFFAOYSA-N 0.000 claims description 2
HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 2
ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims 2
RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 2
ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 claims 2
RJWLLQWLBMJCFD-UHFFFAOYSA-N 4-methylpiperazin-1-amine Chemical compound CN1CCN(N)CC1 RJWLLQWLBMJCFD-UHFFFAOYSA-N 0.000 claims 1
230000000996 additive effect Effects 0.000 claims 1
IYPZRUYMFDWKSS-UHFFFAOYSA-N piperazin-1-amine Chemical compound NN1CCNCC1 IYPZRUYMFDWKSS-UHFFFAOYSA-N 0.000 claims 1
229910052751 metal Inorganic materials 0.000 abstract description 28
239000002184 metal Substances 0.000 abstract description 28
230000000694 effects Effects 0.000 abstract description 8
238000005536 corrosion prevention Methods 0.000 abstract description 2
150000001412 amines Chemical class 0.000 description 10
238000011156 evaluation Methods 0.000 description 10
230000000052 comparative effect Effects 0.000 description 8
238000012360 testing method Methods 0.000 description 6
238000000206 photolithography Methods 0.000 description 5
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
VGRKIKYTBUOIFW-UHFFFAOYSA-N N1(C(NCC1)CCO)CCO Chemical compound N1(C(NCC1)CCO)CCO VGRKIKYTBUOIFW-UHFFFAOYSA-N 0.000 description 3
229910052802 copper Inorganic materials 0.000 description 3
239000010949 copper Substances 0.000 description 3
GLUUGHFHXGJENI-UHFFFAOYSA-N diethylenediamine Natural products C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 3
STVYXAGSSXIADA-UHFFFAOYSA-N ethanol imidazolidine Chemical compound CCO.C1CNCN1 STVYXAGSSXIADA-UHFFFAOYSA-N 0.000 description 3
238000007654 immersion Methods 0.000 description 3
125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
KLNZINBTWHOFIC-UHFFFAOYSA-N N1(C(NCC1)CO)CO Chemical compound N1(C(NCC1)CO)CO KLNZINBTWHOFIC-UHFFFAOYSA-N 0.000 description 2
125000000217 alkyl group Chemical group 0.000 description 2
125000005233 alkylalcohol group Chemical group 0.000 description 2
229910052782 aluminium Inorganic materials 0.000 description 2
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
229910052804 chromium Inorganic materials 0.000 description 2
239000011651 chromium Substances 0.000 description 2
238000004140 cleaning Methods 0.000 description 2
238000001312 dry etching Methods 0.000 description 2
230000002708 enhancing effect Effects 0.000 description 2
239000011521 glass Substances 0.000 description 2
ODQLEMXCKZIVGZ-UHFFFAOYSA-N imidazolidin-1-ylmethanol Chemical compound OCN1CCNC1 ODQLEMXCKZIVGZ-UHFFFAOYSA-N 0.000 description 2
230000002401 inhibitory effect Effects 0.000 description 2
230000010354 integration Effects 0.000 description 2
239000000463 material Substances 0.000 description 2
229910052750 molybdenum Inorganic materials 0.000 description 2
239000011733 molybdenum Substances 0.000 description 2
238000000059 patterning Methods 0.000 description 2
239000003880 polar aprotic solvent Substances 0.000 description 2
CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 description 1
RCAOVXVNUVCUAA-UHFFFAOYSA-N 1-(3-hydroxyimidazolidin-1-yl)ethanol Chemical compound CC(O)N1CCN(O)C1 RCAOVXVNUVCUAA-UHFFFAOYSA-N 0.000 description 1
PVOAHINGSUIXLS-UHFFFAOYSA-N 1-Methylpiperazine Chemical compound CN1CCNCC1 PVOAHINGSUIXLS-UHFFFAOYSA-N 0.000 description 1
RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
VPVDFCVRCDDRQH-UHFFFAOYSA-N 1-imidazolidin-1-ylethanol Chemical compound CC(O)N1CCNC1 VPVDFCVRCDDRQH-UHFFFAOYSA-N 0.000 description 1
VVBGPXLMSBRLOZ-UHFFFAOYSA-N 1-imidazolidin-1-ylpropan-1-ol Chemical compound CCC(O)N1CCNC1 VVBGPXLMSBRLOZ-UHFFFAOYSA-N 0.000 description 1
CVXYHECBHMSYDW-UHFFFAOYSA-N 2-butoxyethanol 1-methoxypropan-2-ol Chemical compound COCC(C)O.CCCCOCCO CVXYHECBHMSYDW-UHFFFAOYSA-N 0.000 description 1
125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
RELOFIKZGIJATN-UHFFFAOYSA-N 2-imidazolidin-1-ylethanol Chemical compound OCCN1CCNC1 RELOFIKZGIJATN-UHFFFAOYSA-N 0.000 description 1
JOMNTHCQHJPVAZ-UHFFFAOYSA-N 2-methylpiperazine Chemical compound CC1CNCCN1 JOMNTHCQHJPVAZ-UHFFFAOYSA-N 0.000 description 1
RQWVZVLWIVJXJS-UHFFFAOYSA-N 3-imidazolidin-1-ylpropan-1-ol Chemical compound OCCCN1CCNC1 RQWVZVLWIVJXJS-UHFFFAOYSA-N 0.000 description 1
XGYWMQKDFAQUEG-UHFFFAOYSA-N C1CN(C(N1)CCCCO)CCCCO Chemical compound C1CN(C(N1)CCCCO)CCCCO XGYWMQKDFAQUEG-UHFFFAOYSA-N 0.000 description 1
OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
SQJNLOORZTXOSO-UHFFFAOYSA-N N1(C(NCC1)CCCO)CCCO Chemical compound N1(C(NCC1)CCCO)CCCO SQJNLOORZTXOSO-UHFFFAOYSA-N 0.000 description 1
XISFRKWHAJDGER-UHFFFAOYSA-N OC(CCO)N1CNCC1 Chemical compound OC(CCO)N1CNCC1 XISFRKWHAJDGER-UHFFFAOYSA-N 0.000 description 1
125000003282 alkyl amino group Chemical group 0.000 description 1
125000005037 alkyl phenyl group Chemical group 0.000 description 1
150000001408 amides Chemical class 0.000 description 1
229910021417 amorphous silicon Inorganic materials 0.000 description 1
238000009835 boiling Methods 0.000 description 1
244000309464 bull Species 0.000 description 1
239000000470 constituent Substances 0.000 description 1
MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
239000004210 ether based solvent Substances 0.000 description 1
238000004299 exfoliation Methods 0.000 description 1
230000001747 exhibiting effect Effects 0.000 description 1
238000002474 experimental method Methods 0.000 description 1
238000007710 freezing Methods 0.000 description 1
230000008014 freezing Effects 0.000 description 1
229910052602 gypsum Inorganic materials 0.000 description 1
239000010440 gypsum Substances 0.000 description 1
239000007788 liquid Substances 0.000 description 1
239000004973 liquid crystal related substance Substances 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
230000035515 penetration Effects 0.000 description 1
229920000642 polymer Polymers 0.000 description 1
150000003141 primary amines Chemical class 0.000 description 1
238000012545 processing Methods 0.000 description 1
239000002994 raw material Substances 0.000 description 1
150000003335 secondary amines Chemical class 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
238000003860 storage Methods 0.000 description 1
125000001424 substituent group Chemical group 0.000 description 1
239000000758 substrate Substances 0.000 description 1
230000002195 synergetic effect Effects 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Photosensitive Polymer And Photoresist Processing (AREA)
Detergent Compositions (AREA)
Cleaning Or Drying Semiconductors (AREA)

KR1020090125458A 2009-12-16 2009-12-16 레지스트 제거용 조성물 KR101679030B1 (ko)

Priority Applications (3)

Application Number	Priority Date	Filing Date	Title
KR1020090125458A KR101679030B1 (ko)	2009-12-16	2009-12-16	레지스트 제거용 조성물
TW099143726A TWI529503B (zh)	2009-12-16	2010-12-14	抗蝕劑剝離劑組成物
CN201010594494.2A CN102103334B (zh)	2009-12-16	2010-12-15	抗蚀剂剥离剂组合物

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR1020090125458A KR101679030B1 (ko)	2009-12-16	2009-12-16	레지스트 제거용 조성물

Publications (2)

Publication Number	Publication Date
KR20110068483A KR20110068483A (ko)	2011-06-22
KR101679030B1 true KR101679030B1 (ko)	2016-11-23

Family

ID=44156200

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1020090125458A KR101679030B1 (ko)	2009-12-16	2009-12-16	레지스트 제거용 조성물

Country Status (3)

Country	Link
KR (1)	KR101679030B1 (zh)
CN (1)	CN102103334B (zh)
TW (1)	TWI529503B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR102091544B1 (ko) *	2014-01-22	2020-03-20	동우 화인켐 주식회사	레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
KR102414295B1 (ko) *	2016-01-22	2022-06-30	주식회사 이엔에프테크놀로지	포토레지스트 제거용 박리액 조성물
KR20170099525A (ko) *	2016-02-24	2017-09-01	동우 화인켐 주식회사	레지스트 박리액 조성물
KR20210093496A (ko) *	2020-01-20	2021-07-28	주식회사 엘지화학	포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법

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US7319131B2 (en) *	2003-03-07	2008-01-15	Angus Chemical Company	Phenolic resins
KR101082018B1 (ko) *	2004-05-07	2011-11-10	주식회사 동진쎄미켐	레지스트 제거용 조성물
JP2007536566A (ja) *	2004-05-07	2007-12-13	ドウジンセミケムカンパニーリミテッド	（フォト）レジスト除去用組成物
EP1729179A1 (en) *	2005-06-03	2006-12-06	Atotech Deutschland Gmbh	Method for fine line resist stripping
CN101029397B (zh) *	2006-03-03	2011-04-13	Mec株式会社	表面处理剂和使用了该表面处理剂的皮膜形成方法
KR20080045501A (ko) *	2006-11-20	2008-05-23	동우 화인켐 주식회사	포토레지스트 박리액 조성물 및 이를 이용한포토레지스트의 박리방법
CN101398638A (zh) *	2007-09-29	2009-04-01	安集微电子（上海）有限公司	一种光刻胶清洗剂
KR101008373B1 (ko) *	2009-11-26	2011-01-13	주식회사 엘지화학	포토레지스트 스트리퍼 조성물 및 이를 이용한 포토레지스트 박리방법

2009
- 2009-12-16 KR KR1020090125458A patent/KR101679030B1/ko active IP Right Grant
2010
- 2010-12-14 TW TW099143726A patent/TWI529503B/zh active
- 2010-12-15 CN CN201010594494.2A patent/CN102103334B/zh active Active

Also Published As

Publication number	Publication date
TWI529503B (zh)	2016-04-11
CN102103334B (zh)	2015-05-13
KR20110068483A (ko)	2011-06-22
CN102103334A (zh)	2011-06-22
TW201126287A (en)	2011-08-01

Legal Events

Date	Code	Title	Description
2014-09-29	A201	Request for examination
2016-03-14	E902	Notification of reason for refusal
2016-08-23	E701	Decision to grant or registration of patent right
2016-11-17	GRNT	Written decision to grant
2019-09-18	FPAY	Annual fee payment	Payment date: 20190918 Year of fee payment: 4

Publication	Publication Date	Title
KR101403515B1 (ko)	2014-06-09	포토레지스트 제거용 조성물
JP6006711B2 (ja)	2016-10-12	１級アルカノールアミンを含むｌｃｄ製造用フォトレジスト剥離液組成物
KR101167240B1 (ko)	2012-07-23	레지스트 제거용 조성물
KR100913048B1 (ko)	2009-08-25	포토레지스트용 스트리퍼 조성물
JP5236217B2 (ja)	2013-07-17	レジスト除去用組成物
KR20060117666A (ko)	2006-11-17	포토레지스트용 스트리퍼 조성물
WO2014081127A1 (ko)	2014-05-30	포토레지스트 박리액 조성물 및 포토레지스트의 박리방법
KR20110007828A (ko)	2011-01-25	구리 또는 구리합금 배선용 박리액 조성물
KR101679030B1 (ko)	2016-11-23	레지스트 제거용 조성물
TWI406112B (zh)	2013-08-21	光阻清除組成物及清除光阻之方法
KR101051438B1 (ko)	2011-07-22	포토레지스트 스트리퍼 조성물 및 이를 이용한포토레지스트 박리방법
KR101082018B1 (ko)	2011-11-10	레지스트 제거용 조성물
KR100850163B1 (ko)	2008-08-04	포토레지스트용 스트리퍼 조성물
KR20100125108A (ko)	2010-11-30	구리용 레지스트 제거용 조성물
KR20120022195A (ko)	2012-03-12	레지스트 박리액 조성물 및 그를 이용한 박리방법
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