KR101636140B1 - Light emitting device, and method of fabricating the same - Google Patents
Light emitting device, and method of fabricating the same Download PDFInfo
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- KR101636140B1 KR101636140B1 KR1020140109315A KR20140109315A KR101636140B1 KR 101636140 B1 KR101636140 B1 KR 101636140B1 KR 1020140109315 A KR1020140109315 A KR 1020140109315A KR 20140109315 A KR20140109315 A KR 20140109315A KR 101636140 B1 KR101636140 B1 KR 101636140B1
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- light emitting
- emitting structure
- semiconductor layer
- refractive index
- shell
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- 238000004519 manufacturing process Methods 0.000 title abstract description 28
- 239000002245 particle Substances 0.000 claims abstract description 58
- 238000001704 evaporation Methods 0.000 claims abstract description 22
- 239000011258 core-shell material Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims description 78
- 238000000034 method Methods 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 18
- 230000008020 evaporation Effects 0.000 claims description 15
- 229910002601 GaN Inorganic materials 0.000 claims description 13
- 238000000605 extraction Methods 0.000 claims description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- 239000004793 Polystyrene Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229920002223 polystyrene Polymers 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims 1
- 239000002019 doping agent Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- -1 InN Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910007946 ZrB Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
A method of manufacturing a light emitting device is provided. The method of manufacturing the light emitting device includes the steps of preparing a light emitting structure, core shell particles having a core portion and a shell portion surrounding the core portion, And evaporating the core portion and leaving the shell portion to form hollow particles on the light emitting structure.
Description
The present invention relates to a light emitting device and a method of manufacturing the same, and more particularly, to a method of manufacturing a light emitting device including the steps of forming core shell particles having a core portion and a shell portion surrounding the core portion on a light emitting structure and evaporating the core portion to form hollow particles The present invention relates to a method of manufacturing a light emitting device and a light emitting device manufactured thereby.
2. Description of the Related Art A light-emitting diode (LED) is a kind of pn junction diode, which is a semiconductor device using electroluminescence, which is a phenomenon in which a monochromatic light is emitted when a voltage is applied in a forward direction. The wavelength of the emitted light is determined by the bandgap energy (Eg) of the material used. Particularly, in recent years, light emitting devices made of a nitride based semiconductor material are being commercialized.
Researches on a light emitting device such as a light emitting diode have been actively conducted and technologies for improving the efficiency and reliability of the light emitting device have been limited by developing the structure of the light emitting device and the material applied to the light emitting device .
Accordingly, various new methods for increasing the light efficiency of the light emitting device have been studied. For example, Korean Patent Laid-Open Publication No. 10-2013-0120107 (Application No. 10-2012-0043115, filed by POSTECH, Industry & Academy Collaboration Group, and others) discloses a method of manufacturing a semiconductor device having a nano- A light emitting diode having improved light extraction efficiency using a light extracting structure having a lower refractive index in a region and a manufacturing method thereof are disclosed.
In another example, Korean Patent Laid-Open Publication No. 10-2007-0075592 (Application No. 10-2006-0004013, Applicant Seoul Biosys) discloses a method for manufacturing a mother board, Discloses a technique of manufacturing a light emitting diode including a first semiconductor layer which is unevenly formed by a reverse surface of an uneven surface to prevent light loss due to internal reflection and improve light extraction efficiency.
SUMMARY OF THE INVENTION It is an object of the present invention to provide a highly reliable light emitting device and a method of manufacturing the same.
It is another object of the present invention to provide a light emitting device having improved luminous efficiency and a method of manufacturing the same.
Another aspect of the present invention is to provide a method of manufacturing a light emitting device that minimizes deterioration of a light emitting structure in which light is emitted and maximizes luminous efficiency.
The technical problem to be solved by the present invention is not limited to the above.
According to an aspect of the present invention, there is provided a method of manufacturing a light emitting device.
According to one embodiment, a method of manufacturing a light emitting device includes the steps of preparing a light emitting structure, core shell particles having a core portion and a shell portion surrounding the core portion, Forming a hollow particle on the light emitting structure, and forming a hollow particle on the light emitting structure by evaporating the core portion and leaving the shell portion.
According to one embodiment, the shell portion may have a higher evaporation temperature than the core portion.
According to one embodiment, the step of forming the hollow particles may include heat treating the light emitting structure at a processing temperature higher than the evaporation temperature of the core portion and lower than the evaporation temperature of the shell portion.
According to one embodiment, the shell portion may include a material having a refractive index lower than that of the light emitting structure and higher than that of air.
According to one embodiment, the core portion may be formed of polystyrene, and the shell portion may be formed of silicon oxide.
According to an embodiment, the light extraction efficiency of light emitted from the light emitting structure may be increased as the thickness of the remaining shell part increases, within a range of the thickness of the shell part being 70 nm or less.
According to one embodiment, the light emitting structure may include a gallium nitride based semiconductor layer.
According to one embodiment, the light emitting structure includes a substrate, a first semiconductor layer of a first conductivity type on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer of a second conductivity type, Layer, and the core shell particle and the hollow particle may be in contact with the second semiconductor layer.
In order to solve the above technical problem, the present invention provides a light emitting device.
According to one embodiment, a light emitting device includes a light emitting structure including a semiconductor layer having a first refractive index, and a core region disposed on the light emitting structure and having a second refractive index lower than the first refractive index, And a shell portion having a third refractive index lower than the first refractive index and higher than the second refractive index.
According to one embodiment, the thickness of the shell portion may be less than or equal to 70 nm.
According to one embodiment, a part of the light emitted from the light emitting structure is emitted to the outside along the medium in which the refractive index gradually decreases through the semiconductor layer and the shell in order, and the other part of the light emitted from the light emitting structure May be suppressed into the core region and reflected by the inner wall of the shell portion.
According to one embodiment, the core region may include one having the same refractive index as air.
According to the embodiment of the present invention, on the light emitting structure, core shell particles having a core portion and a shell portion are formed, the core portion is evaporated, and the shell portion is left so that hollow particles can be formed. The core portion is evaporated at a temperature lower than the evaporation temperature of the shell portion and the temperature at which the light emitting structure is deteriorated, so that the hollow particles can be manufactured while minimizing deterioration of the light emitting structure. Accordingly, a highly reliable light emitting device and a manufacturing method thereof can be provided.
In addition, the light extraction efficiency of light emitted from the light emitting structure is improved by the hollow entry, thereby providing a light emitting device with high light emission.
1 is a flowchart illustrating a method of manufacturing a light emitting device according to an embodiment of the present invention.
2 to 4 are cross-sectional views illustrating a method of manufacturing a light emitting device according to an embodiment of the present invention.
5 is a graph for explaining EL (electroluminescence) of a light emitting device manufactured according to a method of manufacturing a light emitting device according to an embodiment of the present invention.
6 is a graph illustrating the luminous efficiency according to the thickness of the shell part of the hollow particles included in the light emitting device manufactured according to the method of manufacturing the light emitting device according to the embodiment of the present invention.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical spirit of the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
In this specification, when an element is referred to as being on another element, it may be directly formed on another element, or a third element may be interposed therebetween. Further, in the drawings, the thicknesses of the films and regions are exaggerated for an effective explanation of the technical content.
Also, while the terms first, second, third, etc. in the various embodiments of the present disclosure are used to describe various components, these components should not be limited by these terms. These terms have only been used to distinguish one component from another. Thus, what is referred to as a first component in any one embodiment may be referred to as a second component in another embodiment. Each embodiment described and exemplified herein also includes its complementary embodiment. Also, in this specification, 'and / or' are used to include at least one of the front and rear components.
The singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise. It is also to be understood that the terms such as " comprises "or" having "are intended to specify the presence of stated features, integers, Should not be understood to exclude the presence or addition of one or more other elements, elements, or combinations thereof. Also, in this specification, the term "connection " is used to include both indirectly connecting and directly connecting a plurality of components.
In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.
FIG. 1 is a flow chart for explaining a method of manufacturing a light emitting device according to an embodiment of the present invention, and FIGS. 2 to 4 are cross-sectional views illustrating a method of manufacturing a light emitting device according to an embodiment of the present invention.
Referring to FIGS. 1 and 2, a light emitting structure is prepared (S110). The light emitting structure includes a
The
The
Although not shown in the figure, a buffer layer may be further disposed between the
The
The
The
The
The light emitting structure may further include a
Referring to FIGS. 1 and 3, core-
The
The
The
Referring to FIGS. 1 and 4,
According to one embodiment, the thickness of the
According to the embodiment of the present invention, as described above, the
For example, when the
If a plasma etching method or a chemical etching method is performed to form hollow particles on a light emitting structure (for example, a light emitting diode), the light emitting structure is deteriorated in a process of plasma etching or chemical etching . As a result, reliability and / or luminous efficiency of the light emitting element can be lowered.
However, as described above, according to the embodiment of the present invention, the
1 to 4, on the light emitting structure including the
Next, a light emitting device according to an embodiment of the present invention will be described with reference to FIG.
Referring to FIG. 4, the light emitting device according to the embodiment of the present invention may include the light emitting structure described with reference to FIGS. 1 to 4 and the
The light emitting structure may include a
The
According to one embodiment, the
According to the embodiment of the present invention, the
In addition, according to the embodiment of the present invention, the light generated in the
If the
However, as described above, according to the embodiment of the present invention, the light emitted from the
Hereinafter, characteristics evaluation results of the light emitting device manufactured according to the method of manufacturing the light emitting device according to the embodiment of the present invention will be described.
5 is a graph for explaining EL (electroluminescence) of a light emitting device manufactured according to a method of manufacturing a light emitting device according to an embodiment of the present invention.
Referring to FIG. 5, core shell particles having a gallium nitride-based light emitting diode, a polystyrene core portion, and a SiO 2 shell portion were prepared. After spin-coated on the light emitting diode of the core-shell particles, to prepare a device having a hollow SiO 2 particles according to an embodiment of the present invention the heat treatment for 30 minutes at 500 degrees Celsius.
As a first comparative example of the present invention, a light emitting device in which the hollow particles are omitted on a light emitting diode was prepared, and as a second comparative example of the present invention, a light emitting device having SiO 2 particles on a light emitting diode Prepared.
As can be seen from FIG. 5, in comparison with the light emitting device according to the first comparative example in which the hollow particles are omitted on the light emitting diode, the light emitting device having SiO 2 particles on the light emitting diode according to the second comparative example, It can be seen that the luminous efficiency of the light emitting device having SiO 2 hollow particles on the light emitting diode is higher. Further, it can be seen that the luminous efficiency of the light emitting device according to the embodiment of the present invention is improved as compared with the light emitting device according to the second comparative example.
6 is a graph illustrating the luminous efficiency according to the thickness of the shell part of the hollow particles included in the light emitting device manufactured according to the method of manufacturing the light emitting device according to the embodiment of the present invention.
Referring to FIG. 6, a light emitting device having hollow particles having SiO 2 shell portions of various thicknesses according to an embodiment of the present invention was manufactured by the method described with reference to FIG. As can be seen from FIG. 6, it can be confirmed that the light extraction efficiency is improved as the thickness of the shell part of the hollow particle increases. Further, even if the thickness of the shell portion is thicker than 70 nm, it can be confirmed that the light extraction efficiency is not improved. That is, in the case of manufacturing the hollow particles by evaporating the core portion according to the embodiment of the present invention described with reference to FIGS. 1 to 4, it is preferable that the thickness of the shell portion is 70 nm or less to facilitate evaporation of the core portion It can be confirmed that this method maximizes the light extraction efficiency.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the scope of the present invention is not limited to the disclosed exemplary embodiments. It will also be appreciated that many modifications and variations will be apparent to those skilled in the art without departing from the scope of the invention.
100: substrate
105: undoped semiconductor layer
110: first semiconductor layer
115:
120: second semiconductor layer
132: first electrode
134: second electrode
140: core shell particle
140H: hollow particles, light extracting particles
142: core part
142H: hollow, core region
144:
Claims (13)
Forming a core shell particle on the light emitting structure, the core shell particle having a core portion and a shell portion surrounding the core portion; And
Evaporating the core portion and leaving the shell portion to form hollow particles on the light emitting structure,
Within the range where the thickness of the shell portion is 70 nm or less,
Wherein the light extracting efficiency of light emitted from the light emitting structure is increased as the thickness of the remaining shell part is increased.
Wherein the shell portion has a higher evaporation temperature than the core portion.
Wherein the forming of the hollow particles includes heat treating the light emitting structure at a processing temperature higher than the evaporation temperature of the core portion and lower than the evaporation temperature of the shell portion.
Wherein the shell portion has a refractive index lower than a refractive index of the light emitting structure and a value higher than a refractive index of air.
Wherein the core portion is formed of polystyrene, and the shell portion is formed of silicon oxide.
Wherein the light emitting structure includes a gallium nitride based semiconductor layer.
The light-
Board;
A first semiconductor layer of a first conductivity type on the substrate;
An active layer on the first semiconductor layer; And
A second semiconductor layer of a second conductivity type disposed on the active layer,
Wherein the core shell particle and the hollow particle contact the second semiconductor layer.
A core region disposed on the light emitting structure and having a second refractive index lower than the first refractive index and a shell portion surrounding the core region and having a shell portion having a third refractive index lower than the first refractive index and higher than the second refractive index, Comprising extracting particles,
Within the range where the thickness of the shell portion is 70 nm or less,
Wherein light extraction efficiency of light emitted from the light emitting structure is increased as the thickness of the shell portion increases.
And the thickness of the shell portion is 70 nm or less.
A part of the light emitted from the light emitting structure passes through the semiconductor layer and the shell part in order and is emitted to the outside along a medium in which the refractive index is gradually decreased,
Wherein another portion of the light emitted from the light emitting structure is suppressed into the core region and reflected by the inner wall of the shell portion.
Wherein the core region has the same refractive index as air.
Priority Applications (2)
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KR1020140109315A KR101636140B1 (en) | 2014-08-22 | 2014-08-22 | Light emitting device, and method of fabricating the same |
PCT/KR2015/008786 WO2016028128A1 (en) | 2014-08-22 | 2015-08-21 | Light emitting device and preparation method therefor |
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KR102535149B1 (en) * | 2016-11-15 | 2023-05-19 | 엘지디스플레이 주식회사 | Organic inorganic hybrid light emitting partilce, light emitting flim, led package, light emitting diode and display device having the same |
KR102017161B1 (en) * | 2017-12-11 | 2019-09-02 | 서울과학기술대학교 산학협력단 | Method for Manufacturing p-type oxide thin film |
KR102144987B1 (en) * | 2018-08-13 | 2020-08-14 | 고려대학교 산학협력단 | Refractive index adjustable nano particle, Light scattering layer comprising the same, and Method for producing the same |
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KR101004310B1 (en) * | 2008-07-25 | 2010-12-28 | 고려대학교 산학협력단 | Light emitting diode and method for manufacturing the same |
KR101420941B1 (en) | 2012-12-18 | 2014-07-21 | 한양대학교 산학협력단 | GaN-based light emitting device with highly improved light extraction efficiency |
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KR101101780B1 (en) * | 2008-09-08 | 2012-01-05 | 서울대학교산학협력단 | Nitride thin film structure and method of forming the same |
KR101134191B1 (en) * | 2010-04-26 | 2012-04-09 | 전북대학교산학협력단 | Surface Plasmon Resonance-based Light Emitting Diode Using Core-Shell Nanoparticles |
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KR101004310B1 (en) * | 2008-07-25 | 2010-12-28 | 고려대학교 산학협력단 | Light emitting diode and method for manufacturing the same |
KR101420941B1 (en) | 2012-12-18 | 2014-07-21 | 한양대학교 산학협력단 | GaN-based light emitting device with highly improved light extraction efficiency |
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