KR101513226B1 - Method for picking-up semiconductor chip using low frequency vibration - Google Patents

Method for picking-up semiconductor chip using low frequency vibration Download PDF

Info

Publication number
KR101513226B1
KR101513226B1 KR1020140138397A KR20140138397A KR101513226B1 KR 101513226 B1 KR101513226 B1 KR 101513226B1 KR 1020140138397 A KR1020140138397 A KR 1020140138397A KR 20140138397 A KR20140138397 A KR 20140138397A KR 101513226 B1 KR101513226 B1 KR 101513226B1
Authority
KR
South Korea
Prior art keywords
semiconductor chip
film
vibration
ejector pin
low frequency
Prior art date
Application number
KR1020140138397A
Other languages
Korean (ko)
Inventor
박병욱
장용훈
Original Assignee
아메스산업(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아메스산업(주) filed Critical 아메스산업(주)
Application granted granted Critical
Publication of KR101513226B1 publication Critical patent/KR101513226B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The present invention relates to a pickup method of a semiconductor chip using low frequency vibration. More specifically, vibration power having low frequency of 100Hz-5kHz is continuously applied to a film, and an ejector pin simultaneously rises when a plurality of semiconductor chips, sawed and attached when the semiconductor chips are adhering on the adhesive film, is separated in a wafer sawing process to manufacture a semiconductor package. Therefore, the pickup method of a semiconductor chip using low frequency vibration easily separates the semiconductor chip from the film without a crack or melting of the adhesive film due to high temperature heat.

Description

TECHNICAL FIELD [0001] The present invention relates to a pickup method for picking up semiconductor chips using low-

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a pickup method of a semiconductor chip using low frequency vibration, and more particularly, to a method of picking up a semiconductor chip by low- The oscillating force having a low frequency of 100 Hz to 5 kHz is continuously applied to the film at the same time as the ejection pin is lifted to solve the melting problem of the sticky film due to the high temperature heat unlike the method using the high frequency by the conventional ultrasonic wave In addition, the present invention relates to a pickup method of a semiconductor chip using low-frequency vibration capable of easily separating a semiconductor chip from an adhesive film without fear of generation of fine cracks at the edge of a semiconductor chip (particularly 30 탆 or less).

In order to manufacture a semiconductor package, a semiconductor chip, which is a core component of the semiconductor package, must first be prepared, and the semiconductor chip is obtained from a wafer in the form of a disc.

As shown in FIG. 1A, semiconductor chips 2 having the same configuration are mounted on the wafer 1 at regular intervals. In order to use the semiconductor chips 2 mounted repeatedly and repeatedly, A wafer sawing process is performed in which chips 2 are cut into individual chips. At this time, in order to separate the wafer 1 into individual semiconductor chips 2, the wafer 1 is adhered to the upper surface of the adhesive film 3, and the wafer 1 is adhered to the upper surface of the adhesive film 3 with a predetermined cutting tool The wafer 1 is sagged to a predetermined size according to a predetermined program. Therefore, in the state of the wafer 1 in the state where the wafer sawing process is completed, as shown in FIG. 1A, the wafer 1 is cut into a checkerboard shape, and a large number of the semiconductor chips 2 are adhered onto the adhesive film 3 do.

1B, the semiconductor chips 2 attached to the adhesive film 3 are separated one by one using a separate pick-up means 4, as shown in FIG. 1B. At this time, Since the semiconductor chips 2 are adhered to the film 3 with a considerable adhesive force enough to withstand the soaking process, the semiconductor chips 2 are removed from the pick-up means (see reference numeral 4 in Fig. 1B) So that the so-called ejector is used as the separation assisting means for the semiconductor chip.

That is, by using such an ejector, the state of adhesion between the film 3 and the semiconductor chip 2 is partially weakened, or the adhesion of the individual semiconductor chips 2 by the attraction force of the pickup means 4, Is picked up from the film (3) and the subsequent manufacturing process of the semiconductor package proceeds continuously.

However, in the prior art, when the separation assisting means for partially separating the semiconductor chip is applied, an ejector having a needle pin 6 having a sharp top end as shown in FIG. The semiconductor chip 2 is separated from the film 3 by a method of sticking the semiconductor chip 2 that is adhered thereon from the bottom to the top. However, as described above, when the ejector having the tungsten needle pin 6 having a high hardness and a sharp tip is used as the separation assisting means, the pulling strength of the tungsten needle pin having a high hardness causes the semiconductor chip (Scratches) on the back surface of the semiconductor chips 2, thereby damaging the semiconductor chips.

In order to solve the above problems, Korean Patent No. 10-0638760 discloses a structure in which the tip of the zoom jig 11 is spherical or planar, and a vertical vibration is applied to the semiconductor jig 2 from the adhesive sheet 5, So that the semiconductor chip can be prevented from being damaged. 2 (a), the semiconductor chip 2 to be separated is evacuated from the back side of the sheet in the suction stage 15, and the sheet 5 is held in the state that the rising jig 11 And the semiconductor chip 2 is pushed up via the adhesive sheet 5 at the tip end of the zoom jig 11. [ 2 (b), ultrasonic vibration having a frequency of 20 to 100 kHz and an amplitude of 5 to 100 mu m is applied to the pressure sensitive adhesive sheet 11 at the front end of the rising jig 11 after the rising jig 11 is lifted, The semiconductor chips 2 are separated from the adhesive sheet 5 by applying ultrasonic vibrations to the semiconductor chips 2 via the adhesive sheets 5. [

However, in the case of a pick-up apparatus for a semiconductor chip using the conventional ultrasonic vibration as in the above patent, since high frequency of about 20 to 80 kHz is used as the vibration frequency, heat of high temperature is generated due to ultrasonic vibration, There is a problem that the separation of the semiconductor chips from the adhesive sheet 5 becomes more difficult.

Further, in the case of the pickup device for a semiconductor chip using the conventional vibration as in the above patent, vibration occurs after the raising jig 11 is completely raised as shown in FIG. 2 (b), so that during the raising of the raising jig 11, The edge of the sheet 5 is folded downward and the edges of the semiconductor chip 2 supported on the adhesive sheet 5 are also sagged downward, Particularly, when the thickness of the semiconductor chip 2 is as thin as 30 占 퐉 or less, the edges of the semiconductor chip 2 are already bent together with the adhesive sheet 5 at the step of lifting the rising jig 11 without vibration , Micro cracks often occur in the edge portions of the semiconductor chip 2. [

Korean Registered Patent No. 10-0638760 (registered on October 19, 2006)

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and it is an object of the present invention to provide a method of manufacturing a semiconductor package, which is capable of separating a plurality of attached semiconductor chips by sowing in a state of being adhered on a sticky film in a wafer- The oscillating force having a low frequency of 100 Hz to 5 kHz is continuously applied to the film at the same time as the ejection pin is lifted. This makes it possible to prevent the adhesion of the film due to the high temperature heat caused by the high frequency vibration of the ultrasonic wave, And a method of picking up a semiconductor chip using low-frequency vibration capable of easily picking up a semiconductor chip from a film and inputting it immediately to a subsequent step.

According to an aspect of the present invention, there is provided a pickup method of a semiconductor chip using low-frequency vibration, including: picking up a semiconductor chip attached on a tacky film and an ejector having an ejector pin hole at a lower side A step of applying a vacuum to the ejector so that the semiconductor chip is disposed on the ejector pin hole to attract the film; The pick-up means is lowered to come into contact with the semiconductor chip to attract the semiconductor chip; The ejector pin rising from the ejector pin hole pushing up the film and continuously applying a low frequency vibration to the film by the vibration means; And separating the semiconductor chip from the film by the pick-up means.

The low frequency is preferably 100 Hz to 5 kHz.

It is also preferable that the low-frequency vibration has an amplitude of 5 to 50 mu m.

Further, in the step of continuously applying the low-frequency vibration, it is preferable to apply at least one of horizontal and vertical vibration to the film.

The vibrating means may be an electromagnetic oscillator.

Further, the upper end of the ejector pin is preferably round or blunt.

According to the pickup method of a semiconductor chip using low-frequency vibration according to the present invention, in the process of separating a plurality of attached semiconductor chips by sowing in a state of being adhered on a sticky film in a wafer- The oscillating force having a low frequency of 100 Hz to 5 kHz and an amplitude of 5 to 50 m is continuously applied to the film at the same time as the eject pin is lifted to solve the melting problem of the sticky film due to the high temperature due to the high frequency vibration In particular, it is possible to easily pick up a semiconductor chip from a film and directly feed it into a subsequent process while preventing the pickup failure of the semiconductor chip from occurring due to occurrence of a crack at an edge portion, which is often caused in a semiconductor chip having a small thickness have.

FIG. 1A is a plan view illustrating the shape of a wafer after a conventional wafer sawing process, and FIG. 1B is a partial cross-sectional view of an ejector using a conventional needle pin.
2 is a cross-sectional view showing an example of a pickup process of a semiconductor chip using conventional vibration.
3 is a flowchart illustrating a pickup method of a semiconductor chip using low frequency vibration according to the present invention.
4A to 4C are process diagrams showing respective steps of a pickup method of a semiconductor chip using low frequency vibration according to the present invention.

The present invention may be embodied in many other forms without departing from its spirit or essential characteristics. Accordingly, the embodiments of the present invention are to be considered in all respects as merely illustrative and not restrictive.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention.

FIG. 3 is a flowchart showing a pickup method of a semiconductor chip using low frequency vibration according to the present invention, and FIGS. 4A to 4C are process diagrams showing respective steps of a pickup method of a semiconductor chip using low frequency vibration according to the present invention.

Here, the pickup method of the semiconductor chip using the low-frequency vibration according to the present invention is performed by using the semiconductor chip pickup device 100, and the semiconductor chip pickup device 100 described above, as shown in FIGS. 4A to 4C A semiconductor chip pick-up apparatus for separating a semiconductor chip (10) attached to a sticky film (20) from a film (20) An ejector 30 provided with the ejector 30; A pickup 20 disposed above the ejector pin hole 31 of the ejector 30 for separating the semiconductor chip 10 from the film 20 while attracting and raising the semiconductor chip 10 attached to the film 20, Means (40); The ejector pin 30 is disposed in an ejector pin hole 31 of the ejector 30 so that the ejector pin 30 is lifted from the ejector pin hole 31 to push up the film when the pickup means 40 picks up the semiconductor chip 10, (50); And a vibration generator (60) as a vibration means for applying vibration to the film (20) continuously while the ejector pin (40) rises from the rear surface of the functional surface of the semiconductor chip (10).

The pick-up method of the semiconductor chip according to the present invention using the semiconductor pick-up apparatus 100 described above includes a pick-up means 40 located on the upper side of the semiconductor chip 10 attached on the adhesive film 20, Wherein the semiconductor chip (10) is arranged on the ejector pin hole (31) so that the semiconductor chip (10) is placed on the ejector pin hole (31) (S10) adsorbing the film (20) by applying a vacuum to the film (30); A semiconductor chip sucking step (S20) of picking up the semiconductor chip (10) by contacting the semiconductor chip (10) with the pickup means (40) descending; The ejector pin 50 is lifted from the ejector pin hole 31 to push up the film 20 and to continuously apply a vibration having a low frequency to the film 20 by the vibration means, (S30); And a semiconductor chip separation step (S40) in which the pickup means (40) separates the semiconductor chip (10) from the film (20).

4A, the film 20 is placed on the ejector 30 so that any one of the semiconductor chips 10 arranged on the ejector pin hole 31 is placed on the ejector pin hole 31, A vacuum is applied to the ejector 30 so that the film 20 is adsorbed.

Here, the ejector 30 is preferably formed of a porous ceramic material. However, the present invention is not limited thereto. One or a plurality of ejector pin holes 31 may be formed in the ejector 30. On the upper surface of the ejector 30, a sticky film 20 to which a plurality of semiconductor chips 10 are attached is positioned. When vacuum is applied to the lower surface of the ejector 30, the vacuum is transferred to the film 20 through the porous ejector 30 so that the ejector 30 adsorbs and fixes the film 20.

The film 20 is preferably made of a resin material having some degree of tackiness, for example, a material having elasticity such as PVC (polyvinyl chloride) or PET (polyethylene terephthalate). In the present invention, It does not.

In the semiconductor chip sucking step (S20), as shown in FIG. 4B, the pick-up means 40 descends to contact the semiconductor chip 10, and the semiconductor chip 10 is sucked. At this time, it is preferable that the semiconductor chip is adsorbed through a known adsorption collet (41).

4C, the ejector pin 50 is lifted through the ejector pin hole 31 from the back surface of the functional surface of the semiconductor chip 10, The vibration having the low frequency is continuously applied to the film 20 through the vibration generator 60 as the vibration means.

Although the number of the ejector pins 50 is three in the illustrated example, the number of the ejector pins 50 is not limited to the number of the ejector pins 50, . Particularly, when the area of the semiconductor chip 10 is wide, the number of ejector pins 50 increases accordingly, which is the same as in the prior art.

The vibration generator 60 as a vibration means, which is a feature of the present invention, is means for generating horizontal or vertical vibration of a low frequency of 100 Hz to 5 kHz on the rising ejector pin 50. For example, A vibration generator 60 in which a piezoelectric element 61 is embedded below an ejector pin 50 is exemplified. The vibration generator 60 includes a piezoelectric element 61 for generating vibration, 18 is connected to an oscillator (not shown), and the ejector pin 50, which is raised by on / off (0N / 0FF) operation of the oscillator, is subjected to low frequency oscillation. In the present invention, the scope of the right is not limited to the specific kind of the vibration generator 60. [

Here, the vibration generator 60 of the present invention pushes up the film as if it is rubbed by the horizontal or vertical vibration with the low frequency of 100 Hz to 5 kHz along with the continuous rise of the ejector pin 50, The film is not likely to be melted and a minute crack is not generated in which the edge of the film is bent downward due to continuous vibration due to the rise.

On the other hand, the amplitude of the vibration generator 60 as the vibration means of the present invention is preferably in the range of 5 to 50 mu m, which may vary depending on the number of the ejector pins 50, the area of the semiconductor chip 10,

Here, as the upper end of the rising ejector pin 50 is rubbed by the low-frequency vibration, the semiconductor chip 10 is easily separated from the film 20 by being vibrated in the horizontal or vertical direction while pushing up the film 20 , And the end of the ejector pin 50 is preferably round or blunt.

Here, the ejector pin 50 provided with the vibration generator 60 is supported by a known up-and-down moving mechanism 62 so as to be able to move up and down. As shown in the figure, the up-and-down moving mechanism may be a vertical type conveying gear operated by a driving motor. However, the present invention does not limit the type or form of the up-and-down moving mechanism.

In the illustrated example, the vertical movement mechanism 62 and the vibration generator 60 are coupled to the ejector pin 50. However, the vertical movement mechanism 62 and the vibration generator 60 may be independently operated by being engaged with the ejector pin 50 Of course it is.

In the illustrated example, the vibration generator 60 is shown as an example of vibration means, but the vibration means may be a known electromagnetic vibrator disposed below the ejector pin 50, and the type of the vibration generator 60 is not limited thereto .

3, in the above-described semiconductor chip separating step S40, as shown in FIG. 3, in the above-described step S30 of applying the horizontal or vertical direction vibration, the ejector pin 50 having the rounded or blunt upper end is raised The upper end of the ejector pin 50 vibrates in the horizontal or vertical direction with a low frequency of 100 Hz to 5 kHz and an amplitude of 5 to 50 袖 m with respect to the semiconductor chip 10, And finally the semiconductor chip 10 in a state of being adsorbed through the adsorption collet 41 of the pickup means 40 is separated from the film 20. That is, as the upper end of the rising ejector pin 50 is rubbed by the vibration and amplitude of the low frequency, the film 20 is vibrated in the horizontal direction while continuously pushing up the film 20, It is separated.

In this way, the semiconductor chip 10 separated from the film 20 is transferred to a package or a substrate so that a subsequent semiconductor process can be performed. At this time, the height of the adsorption collet 41 is set to a close height, for example, a height of the semiconductor chip 10, without contacting the upper surface of the semiconductor chip 10 in a state in which the semiconductor chip 10 is maximally raised by the rapidly rising ejector pin 50. [ And can be lowered to about 0 to 0.1 mm from the surface. Here, reference numeral 42 denotes an adsorption cap having a plurality of pores formed therein, and reference numeral 43 denotes an adsorption path for delivering a vacuum.

As described above, by providing the semiconductor chip picking up method using the low frequency vibration according to the present invention, it is possible to push up the semiconductor chip to be separated primarily using the ejector in a state where the semiconductor chip is fixed, The horizontal vibration force having an amplitude of 5 to 50 mu m is continuously transmitted to the back surface of the film and the semiconductor chip so that the semiconductor chip can be easily picked up from the film without melting the tacky film due to heat at high temperature, So that it can be directly supplied to the subsequent process.

The present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, It belongs to the scope of right.

100: semiconductor chip pick-up apparatus according to the present invention
10: semiconductor chip 20: film
30: Ejector 31: Ejector pin hole
40: pickup means 41: adsorption collet
42: Adsorption cap 43: Adsorption path
50: ejector pin 60: vibration generator
61: piezoelectric element 62: vertical moving mechanism

Claims (6)

A pickup method of a semiconductor chip picking up a semiconductor chip attached on a sticky film by using an ejector having a pick-up means located on the upper side and an ejector pin hole located on the lower side,
Applying a vacuum to the ejector so that the semiconductor chip is disposed on the ejector pin hole, thereby adsorbing the film;
The pick-up means is lowered to come into contact with the semiconductor chip to attract the semiconductor chip;
The ejector pin rising from the ejector pin hole pushing up the film and continuously applying a low frequency vibration to the film by the vibration means; And
And the pick-up means separating the semiconductor chip from the film,
The low frequency is 100 Hz to 5 kHz,
Wherein the vibration of the low frequency is horizontal vibration having an amplitude of 5 to 50 mu m.
delete delete delete The method according to claim 1,
Wherein the vibration means is an electromagnetic vibrator.
The method according to claim 1,
Wherein the upper end of the ejector pin has a round shape or a blunt shape.
KR1020140138397A 2013-12-17 2014-10-14 Method for picking-up semiconductor chip using low frequency vibration KR101513226B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20130157121 2013-12-17
KR1020130157121 2013-12-17

Publications (1)

Publication Number Publication Date
KR101513226B1 true KR101513226B1 (en) 2015-04-17

Family

ID=53053543

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140138397A KR101513226B1 (en) 2013-12-17 2014-10-14 Method for picking-up semiconductor chip using low frequency vibration

Country Status (1)

Country Link
KR (1) KR101513226B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020528660A (en) * 2017-07-18 2020-09-24 ルーメンス カンパニー リミテッド Light emitting diode module manufacturing equipment and method
CN113745145A (en) * 2020-05-29 2021-12-03 台湾爱司帝科技股份有限公司 Chip transfer system and chip transfer method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040086359A (en) * 2002-03-11 2004-10-08 가부시키가이샤 히타치세이사쿠쇼 Semiconductor device and its manufacturing method
JP2009117867A (en) * 2009-02-16 2009-05-28 Renesas Technology Corp Method of manufacturing semiconductor apparatus
KR20120002157U (en) * 2010-09-15 2012-03-23 주식회사 프로텍 Semiconductor chip pick-up apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040086359A (en) * 2002-03-11 2004-10-08 가부시키가이샤 히타치세이사쿠쇼 Semiconductor device and its manufacturing method
JP2009117867A (en) * 2009-02-16 2009-05-28 Renesas Technology Corp Method of manufacturing semiconductor apparatus
KR20120002157U (en) * 2010-09-15 2012-03-23 주식회사 프로텍 Semiconductor chip pick-up apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020528660A (en) * 2017-07-18 2020-09-24 ルーメンス カンパニー リミテッド Light emitting diode module manufacturing equipment and method
JP7096261B2 (en) 2017-07-18 2022-07-05 ルーメンス カンパニー リミテッド Light emitting diode module manufacturing equipment and method
CN113745145A (en) * 2020-05-29 2021-12-03 台湾爱司帝科技股份有限公司 Chip transfer system and chip transfer method
CN113745145B (en) * 2020-05-29 2023-07-21 台湾爱司帝科技股份有限公司 Chip transfer system and chip transfer method

Similar Documents

Publication Publication Date Title
KR100638760B1 (en) Semiconductor device and its manufacturing method
KR101244482B1 (en) Method of manufacturing semiconductor device
KR101596461B1 (en) Apparatus and Method for Chip Detaching
JP5107408B2 (en) Pickup method and pickup device
CN101529577A (en) Fixed jig, chip pickup method and chip pickup apparatus
JP2004304066A (en) Method of manufacturing semiconductor device
KR102490394B1 (en) Die bonding apparatus, manufacturing method of semiconductor apparatus and peeling apparatus
KR101513226B1 (en) Method for picking-up semiconductor chip using low frequency vibration
JP2004186352A (en) Semiconductor device and its manufacturing method
JP4238669B2 (en) Expanding method and expanding apparatus
JP4755634B2 (en) Pickup device and pickup method
JP2013115291A (en) Apparatus for peeling led chip or ld chip from adhesive sheet and transporting led chip or ld chip
JP6366223B2 (en) Semiconductor chip pickup device
JP2004031672A (en) Pickup device for chip
JP2005302932A (en) Chip separation apparatus
JP2016219573A (en) Pickup apparatus and method
JP4247670B2 (en) Expanding method and expanding apparatus
TW569375B (en) Method to separate article and adhesive film
JP2009117867A (en) Method of manufacturing semiconductor apparatus
KR101683398B1 (en) Apparatus and Method for Chip Detaching
KR102377826B1 (en) Die transfer module and die bonding apparatus including the same
JP4064752B2 (en) Bonding equipment
JP6907384B1 (en) Pickup device
JP2004047861A (en) Method and device for pickup of chip on wafer sheet
JPWO2010052760A1 (en) Chip peeling method, semiconductor device manufacturing method, and chip peeling apparatus

Legal Events

Date Code Title Description
E701 Decision to grant or registration of patent right
GRNT Written decision to grant