KR101399801B1 - 기판 처리 방법 및 기판 처리 시스템 - Google Patents
기판 처리 방법 및 기판 처리 시스템 Download PDFInfo
- Publication number
- KR101399801B1 KR101399801B1 KR1020120142832A KR20120142832A KR101399801B1 KR 101399801 B1 KR101399801 B1 KR 101399801B1 KR 1020120142832 A KR1020120142832 A KR 1020120142832A KR 20120142832 A KR20120142832 A KR 20120142832A KR 101399801 B1 KR101399801 B1 KR 101399801B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- active species
- solution
- treatment liquid
- liquid
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 252
- 238000011282 treatment Methods 0.000 title claims abstract description 195
- 238000000034 method Methods 0.000 title claims abstract description 88
- 239000007788 liquid Substances 0.000 claims abstract description 255
- 230000008569 process Effects 0.000 claims abstract description 73
- 230000004913 activation Effects 0.000 claims abstract description 11
- 238000003672 processing method Methods 0.000 claims abstract description 11
- 238000005530 etching Methods 0.000 claims description 248
- 230000007246 mechanism Effects 0.000 claims description 97
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 92
- 229910052710 silicon Inorganic materials 0.000 claims description 92
- 239000010703 silicon Substances 0.000 claims description 92
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 67
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 claims description 49
- 238000011084 recovery Methods 0.000 claims description 42
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims description 29
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 24
- 229910017604 nitric acid Inorganic materials 0.000 claims description 24
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 225
- 235000012431 wafers Nutrition 0.000 description 55
- 238000010586 diagram Methods 0.000 description 33
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 16
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 15
- 239000000126 substance Substances 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000011550 stock solution Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011277349A JP5858770B2 (ja) | 2011-12-19 | 2011-12-19 | 基板処理システム |
JPJP-P-2011-277349 | 2011-12-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20130070528A KR20130070528A (ko) | 2013-06-27 |
KR101399801B1 true KR101399801B1 (ko) | 2014-05-27 |
Family
ID=48588398
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020120142832A KR101399801B1 (ko) | 2011-12-19 | 2012-12-10 | 기판 처리 방법 및 기판 처리 시스템 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5858770B2 (ja) |
KR (1) | KR101399801B1 (ja) |
CN (1) | CN103165411B (ja) |
TW (1) | TWI502673B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104347385A (zh) * | 2013-07-23 | 2015-02-11 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的选择性刻蚀方法及bsi图像传感器制作方法 |
JP6352143B2 (ja) * | 2013-11-13 | 2018-07-04 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法 |
TWI630652B (zh) | 2014-03-17 | 2018-07-21 | 斯克林集團公司 | 基板處理裝置及使用基板處理裝置之基板處理方法 |
JP6324775B2 (ja) * | 2014-03-17 | 2018-05-16 | 株式会社Screenホールディングス | 基板処理装置および基板処理装置を用いた基板処理方法 |
JP6499414B2 (ja) | 2014-09-30 | 2019-04-10 | 株式会社Screenホールディングス | 基板処理装置 |
JP6903446B2 (ja) * | 2016-03-07 | 2021-07-14 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
CN106449688A (zh) * | 2016-10-28 | 2017-02-22 | 中国电子科技集团公司第四十四研究所 | 制作光敏区布线层的方法 |
JP7471182B2 (ja) | 2020-09-11 | 2024-04-19 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000338684A (ja) | 1999-05-26 | 2000-12-08 | Nagase & Co Ltd | 基板表面処理装置 |
KR20010051255A (ko) * | 1999-10-26 | 2001-06-25 | 가네꼬 히사시 | 반도체 제조 장치 |
KR20080022044A (ko) * | 2006-09-05 | 2008-03-10 | 다이닛뽕스크린 세이조오 가부시키가이샤 | 기판처리장치 |
KR20090023076A (ko) * | 2007-08-31 | 2009-03-04 | 도쿄엘렉트론가부시키가이샤 | 액처리 장치, 액처리 방법 및 기억 매체 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1126425A (ja) * | 1997-06-30 | 1999-01-29 | Sumitomo Metal Ind Ltd | 半導体基板のエッチング方法及びその装置 |
JP3653416B2 (ja) * | 1999-05-19 | 2005-05-25 | 沖電気工業株式会社 | エッチング方法およびエッチング装置 |
DE10248481B4 (de) * | 2002-10-17 | 2006-04-27 | Siltronic Ag | Verfahren und Vorrichtung zur nasschemischen Behandlung von Silicium |
KR100693252B1 (ko) * | 2005-04-13 | 2007-03-13 | 삼성전자주식회사 | 기판 처리 장치, 기판 세정 장치 및 방법 |
JP2007251081A (ja) * | 2006-03-20 | 2007-09-27 | Dainippon Screen Mfg Co Ltd | 基板処理方法 |
-
2011
- 2011-12-19 JP JP2011277349A patent/JP5858770B2/ja active Active
-
2012
- 2012-11-20 TW TW101143242A patent/TWI502673B/zh active
- 2012-12-10 KR KR1020120142832A patent/KR101399801B1/ko active IP Right Grant
- 2012-12-14 CN CN201210544384.4A patent/CN103165411B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000338684A (ja) | 1999-05-26 | 2000-12-08 | Nagase & Co Ltd | 基板表面処理装置 |
KR20010051255A (ko) * | 1999-10-26 | 2001-06-25 | 가네꼬 히사시 | 반도체 제조 장치 |
KR20080022044A (ko) * | 2006-09-05 | 2008-03-10 | 다이닛뽕스크린 세이조오 가부시키가이샤 | 기판처리장치 |
KR20090023076A (ko) * | 2007-08-31 | 2009-03-04 | 도쿄엘렉트론가부시키가이샤 | 액처리 장치, 액처리 방법 및 기억 매체 |
Also Published As
Publication number | Publication date |
---|---|
TW201330153A (zh) | 2013-07-16 |
JP2013128063A (ja) | 2013-06-27 |
CN103165411A (zh) | 2013-06-19 |
JP5858770B2 (ja) | 2016-02-10 |
TWI502673B (zh) | 2015-10-01 |
KR20130070528A (ko) | 2013-06-27 |
CN103165411B (zh) | 2016-08-03 |
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