KR101212736B1 - 코어전압 발생회로 - Google Patents
코어전압 발생회로 Download PDFInfo
- Publication number
- KR101212736B1 KR101212736B1 KR1020070090908A KR20070090908A KR101212736B1 KR 101212736 B1 KR101212736 B1 KR 101212736B1 KR 1020070090908 A KR1020070090908 A KR 1020070090908A KR 20070090908 A KR20070090908 A KR 20070090908A KR 101212736 B1 KR101212736 B1 KR 101212736B1
- Authority
- KR
- South Korea
- Prior art keywords
- core voltage
- active
- response
- voltage
- enable signal
- Prior art date
Links
- 230000004044 response Effects 0.000 claims abstract description 19
- 230000000903 blocking effect Effects 0.000 claims abstract description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/148—Details of power up or power down circuits, standby circuits or recovery circuits
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Amplifiers (AREA)
Abstract
Description
또한, 본 발명의 코어전압 발생회로는 상기 액티브_인에이블 신호에 응답하여 스탠바이 상태에서 상기 액티브 코어전압단을 방전시키기 위한 뮤트부를 더 구비할 수 있다.
또한, 액티브_인에이블 신호(ACTIVE_ENABLE)에 응답하여 코어전압 발생회로가 디스에이블 상태인 동안 구동부(22)를 오프시키기 위한 제어스위칭부(21)를 더 구비할 수 있다.
Claims (10)
- 액티브_인에이블 신호에 응답하여 피드백된 코어전압과 기준전압을 비교하기 위한 비교부;상기 비교부의 출력신호에 응답하여 액티브 코어전압단을 풀업 구동하기 위한 구동부;상기 액티브 코어전압단의 전압을 분배하여 상기 피드백된 코어전압을 발생하는 피드백부; 및상기 액티브 코어전압단과 코어전압라인 - 스탠바이 상태에서 코어전압을 발생하는 다른 코어전압 발생회로가 연결됨 - 사이에 삽입되어, 상기 액티브_인에이블 신호에 응답하여 스탠바이 상태에서 상기 코어전압라인으로부터 전류가 역류하는 것을 방지하기 위한 역류차단부를 구비하는 코어전압 발생회로.
- 제 1 항에 있어서,상기 액티브_인에이블 신호에 응답하여 스탠바이 상태에서 상기 액티브 코어전압단을 방전시키기 위한 뮤트부를 더 구비하는 코어전압 발생회로.
- 제 2 항에 있어서,상기 역류차단부는 상기 액티브_인에이블 신호에 응답하여 상기 액티브 코어전압단과 상기 코어전압라인을 선택적으로 연결하기 위한 트랜스미션 게이트를 구비하는 코어전압 발생회로.
- 제 2 항에 있어서,상기 뮤트부는 상기 액티브 코어전압단과 접지전압단 사이에 접속되며, 상기 상기 액티브_인에이블 신호의 반전 신호를 게이트 입력으로 하는 NMOS 트랜지스터를 구비하는 코어전압 발생회로.
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Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070090908A KR101212736B1 (ko) | 2007-09-07 | 2007-09-07 | 코어전압 발생회로 |
US12/164,972 US7816977B2 (en) | 2007-09-07 | 2008-06-30 | Core voltage generator |
TW097125826A TWI475567B (zh) | 2007-09-07 | 2008-07-09 | 核心電壓產生器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070090908A KR101212736B1 (ko) | 2007-09-07 | 2007-09-07 | 코어전압 발생회로 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090025789A KR20090025789A (ko) | 2009-03-11 |
KR101212736B1 true KR101212736B1 (ko) | 2012-12-14 |
Family
ID=40431216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070090908A KR101212736B1 (ko) | 2007-09-07 | 2007-09-07 | 코어전압 발생회로 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7816977B2 (ko) |
KR (1) | KR101212736B1 (ko) |
TW (1) | TWI475567B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10690703B2 (en) | 2017-02-13 | 2020-06-23 | Samsung Electronics Co., Ltd. | Semiconductor device for monitoring a reverse voltage |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5078502B2 (ja) * | 2007-08-16 | 2012-11-21 | セイコーインスツル株式会社 | 基準電圧回路 |
KR101143636B1 (ko) * | 2010-10-08 | 2012-05-09 | 에스케이하이닉스 주식회사 | 내부전압생성회로 |
KR20220017661A (ko) * | 2020-08-05 | 2022-02-14 | 에스케이하이닉스 주식회사 | 내부 전압 생성 회로와 이를 포함하는 반도체 메모리 장치 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2803410B2 (ja) * | 1991-10-18 | 1998-09-24 | 日本電気株式会社 | 半導体集積回路 |
US5959471A (en) | 1997-09-25 | 1999-09-28 | Siemens Aktiengesellschaft | Method and apparatus for reducing the bias current in a reference voltage circuit |
JPH11231954A (ja) * | 1998-02-16 | 1999-08-27 | Mitsubishi Electric Corp | 内部電源電圧発生回路 |
KR100393226B1 (ko) * | 2001-07-04 | 2003-07-31 | 삼성전자주식회사 | 온도변화에 따라 내부 기준전압 값을 조절할 수 있는 내부기준전압 생성회로 및 이를 구비하는 내부 공급전압생성회로 |
KR100576449B1 (ko) | 2004-01-30 | 2006-05-08 | 주식회사 하이닉스반도체 | 내부전압 발생회로 |
JP4237696B2 (ja) * | 2004-11-17 | 2009-03-11 | パナソニック株式会社 | レギュレータ回路 |
US7068019B1 (en) * | 2005-03-23 | 2006-06-27 | Mediatek Inc. | Switchable linear regulator |
US7417494B2 (en) * | 2005-09-29 | 2008-08-26 | Hynix Semiconductor Inc. | Internal voltage generator |
KR100792441B1 (ko) * | 2006-06-30 | 2008-01-10 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 |
US7432758B2 (en) * | 2006-11-08 | 2008-10-07 | Elite Semiconductor Memory Technology Inc. | Voltage regulator for semiconductor memory |
-
2007
- 2007-09-07 KR KR1020070090908A patent/KR101212736B1/ko active IP Right Grant
-
2008
- 2008-06-30 US US12/164,972 patent/US7816977B2/en active Active
- 2008-07-09 TW TW097125826A patent/TWI475567B/zh not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10690703B2 (en) | 2017-02-13 | 2020-06-23 | Samsung Electronics Co., Ltd. | Semiconductor device for monitoring a reverse voltage |
US10895589B2 (en) | 2017-02-13 | 2021-01-19 | Samsung Electronics Co., Ltd. | Semiconductor device for monitoring a reverse voltage |
Also Published As
Publication number | Publication date |
---|---|
TWI475567B (zh) | 2015-03-01 |
TW200912945A (en) | 2009-03-16 |
US20090066410A1 (en) | 2009-03-12 |
KR20090025789A (ko) | 2009-03-11 |
US7816977B2 (en) | 2010-10-19 |
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