KR101127236B1 - 저항성 메모리 소자의 제조 방법 - Google Patents
저항성 메모리 소자의 제조 방법 Download PDFInfo
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- KR101127236B1 KR101127236B1 KR1020080135540A KR20080135540A KR101127236B1 KR 101127236 B1 KR101127236 B1 KR 101127236B1 KR 1020080135540 A KR1020080135540 A KR 1020080135540A KR 20080135540 A KR20080135540 A KR 20080135540A KR 101127236 B1 KR101127236 B1 KR 101127236B1
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- lower electrode
- memory device
- variable resistance
- resistive memory
- material layer
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- 238000000034 method Methods 0.000 title claims abstract description 62
- 239000000463 material Substances 0.000 claims abstract description 67
- 229910052751 metal Inorganic materials 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 claims abstract description 32
- 150000004767 nitrides Chemical class 0.000 claims abstract description 24
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 18
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims description 19
- 238000005240 physical vapour deposition Methods 0.000 claims description 13
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 8
- 229910001882 dioxygen Inorganic materials 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 6
- 238000005546 reactive sputtering Methods 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 abstract description 43
- 238000007254 oxidation reaction Methods 0.000 abstract description 43
- 230000001590 oxidative effect Effects 0.000 abstract description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 17
- 229910052718 tin Inorganic materials 0.000 description 17
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 6
- 229910052741 iridium Inorganic materials 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 229910052707 ruthenium Inorganic materials 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000618 GeSbTe Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 229910010282 TiON Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- -1 metal oxide nitride Chemical class 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 229910015659 MoON Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910003071 TaON Inorganic materials 0.000 description 1
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5685—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using storage elements comprising metal oxide memory material, e.g. perovskites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/028—Formation of switching materials, e.g. deposition of layers by conversion of electrode material, e.g. oxidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
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- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (18)
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- 기판 상에 하부 전극을 증착하는 단계;상기 하부 전극이 증착된 챔버의 내부로 연속하여 산소 가스를 주입하여 상기 하부 전극 상에 가변 저항 물질층을 증착하는 단계; 및상기 가변 저항 물질층 상에 상부 전극을 형성하는 단계를 포함하고,상기 하부 전극은, 산화물이 가변 저항 특성을 갖는 금속막으로 이루어지고,상기 가변 저항 물질층은, 상기 하부 전극과 동일한 금속을 포함하는 금속 산화막으로 이루어지는저항성 메모리 소자의 제조 방법.
- 기판 상에 하부 전극을 증착하는 단계;상기 하부 전극이 증착된 챔버의 내부로 연속하여 산소 가스를 주입하여 상기 하부 전극 상에 가변 저항 물질층을 증착하는 단계; 및상기 가변 저항 물질층 상에 상부 전극을 형성하는 단계를 포함하고,상기 하부 전극은, 산화물이 가변 저항 특성을 갖는 금속 질화막으로 이루어지고,상기 가변 저항 물질층은, 상기 하부 전극과 동일한 금속을 포함하는 금속 산화 질화막으로 이루어지는저항성 메모리 소자의 제조 방법.
- 제5항 또는 제6항에 있어서,상기 하부 전극 증착 단계는,PVD 방식으로 수행되는저항성 메모리 소자의 제조 방법.
- 제7항에 있어서,상기 가변 저항 물질층 증착 단계는,상기 산소 가스의 주입에 의한 반응성 스퍼터링 방식으로 수행되는저항성 메모리 소자의 제조 방법.
- 삭제
- 제5항 또는 제6항에 있어서,상기 상부 전극은, 상기 하부 전극과 동일한 물질로 이루어지는저항성 메모리 소자의 제조 방법.
- 제10항에 있어서,상기 하부 전극 증착 단계, 상기 가변 저항 물질층 증착 단계, 및 상기 상부 전극 형성 단계는 동일한 챔버에서 연속적으로 수행되는저항성 메모리 소자의 제조 방법.
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Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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KR1020080135540A KR101127236B1 (ko) | 2008-12-29 | 2008-12-29 | 저항성 메모리 소자의 제조 방법 |
US12/486,811 US8409914B2 (en) | 2008-12-29 | 2009-06-18 | Method for fabricating resistive memory device |
TW098125563A TWI491033B (zh) | 2008-12-29 | 2009-07-29 | 用以製造電阻式記憶體裝置之方法 |
CN200910205815.2A CN101771131B (zh) | 2008-12-29 | 2009-10-14 | 制造电阻式存储器件的方法 |
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KR1020080135540A KR101127236B1 (ko) | 2008-12-29 | 2008-12-29 | 저항성 메모리 소자의 제조 방법 |
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KR1020110006968A Division KR20110020886A (ko) | 2011-01-24 | 2011-01-24 | 저항성 메모리 소자의 제조 방법 |
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KR20100077569A KR20100077569A (ko) | 2010-07-08 |
KR101127236B1 true KR101127236B1 (ko) | 2012-03-29 |
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US (1) | US8409914B2 (ko) |
KR (1) | KR101127236B1 (ko) |
CN (1) | CN101771131B (ko) |
TW (1) | TWI491033B (ko) |
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TWI483394B (zh) * | 2011-12-27 | 2015-05-01 | Ind Tech Res Inst | 電阻式隨機存取記憶體及其製作方法 |
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WO2013135364A2 (en) * | 2012-03-12 | 2013-09-19 | Oerlikon Trading Ag, Trübbach | Coating with enhanced sliding properties |
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CN108963072A (zh) * | 2017-05-27 | 2018-12-07 | 旺宏电子股份有限公司 | 半导体结构及其形成方法 |
KR20180134121A (ko) * | 2017-06-08 | 2018-12-18 | 에스케이하이닉스 주식회사 | 저항 변화 메모리 소자 |
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- 2008-12-29 KR KR1020080135540A patent/KR101127236B1/ko active IP Right Grant
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004266263A (ja) | 2003-02-12 | 2004-09-24 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
KR100593750B1 (ko) * | 2004-11-10 | 2006-06-28 | 삼성전자주식회사 | 이성분계 금속 산화막을 데이터 저장 물질막으로 채택하는교차점 비휘발성 기억소자 및 그 제조방법 |
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US20100167463A1 (en) | 2010-07-01 |
KR20100077569A (ko) | 2010-07-08 |
TW201025591A (en) | 2010-07-01 |
TWI491033B (zh) | 2015-07-01 |
US8409914B2 (en) | 2013-04-02 |
CN101771131A (zh) | 2010-07-07 |
CN101771131B (zh) | 2014-06-18 |
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