KR101123143B1 - PDP filter and method for manufacturing the same - Google Patents

PDP filter and method for manufacturing the same Download PDF

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KR101123143B1
KR101123143B1 KR1020100027741A KR20100027741A KR101123143B1 KR 101123143 B1 KR101123143 B1 KR 101123143B1 KR 1020100027741 A KR1020100027741 A KR 1020100027741A KR 20100027741 A KR20100027741 A KR 20100027741A KR 101123143 B1 KR101123143 B1 KR 101123143B1
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thin film
layer
film layer
nbo
repeating unit
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KR1020100027741A
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Korean (ko)
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KR20110108514A (en
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박명섭
오광석
홍현주
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주식회사 아바텍
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  • General Physics & Mathematics (AREA)
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  • Optical Filters (AREA)

Abstract

The present invention relates to a PD filter and a method of manufacturing the same, and the PDP filter of the present invention includes a transparent substrate 100, an NbO x N y thin film layer 111 and a metal thin film layer sequentially stacked on the transparent substrate 100. 112 and two or more repeating unit films 110 including the metal oxide layer 113; It characterized in that it comprises an upper NbO x N y thin film layer 200 is stacked on top of the repeating unit film 110, it has an effect that can reduce the manufacturing cost while having a high visible light transmittance and a low light reflectance.

Description

PD filter and its manufacturing method {PDP filter and method for manufacturing the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma display panel (PDP) filter, and more particularly, to a PDP filter having a low light reflectance and increasing a visible light transmittance and a method of manufacturing the same.

In general, PDPs are in the spotlight as display devices capable of satisfying both size and thickness at the same time. However, such a PDP emits a strong near infrared ray due to its driving characteristics, and this near infrared ray may affect the operation of a cordless telephone or a remote controller and cause a malfunction.

In addition, since strong electromagnetic waves generated in the PDP affect the human body or other electronic devices, it is required to suppress them below a predetermined value. To this end, the PDP is provided with a front filter capable of shielding near infrared rays and electromagnetic waves and at the same time reducing reflection light caused by external lighting, and the front filter must satisfy high light transmittance at the same time due to the relation mounted on the front part of the PDP.

In order to satisfy these conditions, a conductive film type PDP filter of a multilayer thin film type using a conductive metal thin film represented by Ag or the like, a metal oxide thin film represented by AZO or the like, and a high refractive thin film represented by Nb 2 O 5 is widely used. have. Such a multilayer thin film typically has a form in which a metal thin film, a metal oxide thin film, and a high refractive transparent thin film are alternately coated, in which the deposition characteristic of the conductive metal thin film of Ag plays a major role in the electromagnetic shielding function.

1 is a cross-sectional view of a conventional PDP filter. The conventional PDP filter includes a transparent substrate 10, a high refractive index transparent thin film layer 21, a metal oxide layer 22, and a metal on the transparent substrate 10. It consists of two or more repeating unit membranes 30 which consist of the thin film layer 23, and the high refractive index transparent thin film layer 30 laminated | stacked on the uppermost layer.

In the conventional PDP filter, Nb 2 O 5 is used as the high refractive index thin film layer, and in particular, the electrical conductivity of the Ag layer due to the oxygen plasma in the process of coating Nb 2 O 5 on the metal thin film layer 23 made of Ag or Ag alloy. In order to prevent deterioration, a reactive sputtering method of injecting argon and oxygen gas into a Nb 2 O x target has been proposed.

However, the Nb 2 O 5 thin film formation process by the reactive sputtering method using argon and oxygen gas in the Nb 2 O x target is difficult to control the arc, it is difficult to maintain the constant refractive index of the thin film tends to be poor in continuity during production There is a disadvantage in that the production cost is high due to the high target cost.

The present invention is to solve the above problems, and to provide a PDP filter and a method of manufacturing the same having a low light reflectance and a high visible light transmittance, while having a high corrosion resistance and high durability.

The PDP filter of the present invention includes: a transparent substrate, and at least two repeating unit films including a NbO x N y thin film layer, a metal thin film layer, and a metal oxide layer sequentially stacked on the transparent substrate; It can be achieved by including an upper NbO x N y thin film layer stacked on top of the repeating unit film.

In addition, the manufacturing method of the PDP filter of the present invention is a transparent substrate; Two or more repeating unit films including an NbO x N y thin film layer, a metal thin film layer, and a metal oxide layer sequentially stacked on the transparent substrate; In the method for manufacturing a PDP filter including an upper NbO x N y thin film layer stacked on top of the repeating unit film, the NbO x N y thin film layer is a Nb target using a vapor deposition using oxygen and nitrogen as a reaction gas Can be achieved.

As described above, the PDP filter of the present invention and its manufacturing method use NbO x N y , which is a high refractive index transparent absorption thin film having a constant absorption coefficient by injecting nitrogen in addition to argon and oxygen as a reactive gas, thereby providing low visible light reflectance and high visible light transmittance characteristics. As a result, the color purity of the PDP can be improved, and arc generation is minimized, thereby reducing defects caused by appearance defects and reducing production costs by reducing material costs.

1 is a view showing a cross-sectional structure of a conventional PDP filter,
2 is a view showing a cross-sectional structure of a PDP filter according to a first embodiment of the present invention;
Figure 3 is a graph showing the characteristics of the filter in accordance with the input change of the reaction gas (O 2 , N 2 ) in the production of the PDP filter of the present invention,
4 is a view showing a cross-sectional structure of a PDP filter according to a second embodiment of the present invention;
5 is a graph showing characteristics of a PDP filter according to a second embodiment of the present invention;
6 is a view showing a cross-sectional structure of a PDP filter according to a third embodiment of the present invention;
7 is a graph showing characteristics of a PDP filter according to a third embodiment of the present invention.

An embodiment of the present invention will be described in detail with reference to the accompanying drawings.

The PDP filter of the present invention comprises: a transparent substrate and two or more repeating unit films including a NbO x N y thin film layer, a metal thin film layer, and a metal oxide layer sequentially stacked on the transparent substrate; And an upper NbO x N y thin film layer stacked on the repeating unit film.

In addition, the manufacturing method of the PDP filter of the present invention comprises a transparent substrate; Two or more repeating unit films including an NbO x N y thin film layer, a metal thin film layer, and a metal oxide layer sequentially stacked on the transparent substrate; In the method for manufacturing a PDP filter including an upper NbO x N y thin film layer stacked on top of the repeating unit film, the NbO x N y thin film layer is formed using an Nb target and vapor deposition using oxygen and nitrogen as a reaction gas. It is characterized by.

Referring to FIG. 2, an oxynitride layer 111, an Ag layer 112, an oxide layer 113, and an upper oxynitride layer 200 as a metal thin layer are sequentially stacked on the transparent substrate 100.

In particular, in the present invention, the oxynitride layers 111 and 200 are provided by a NbO x N y thin film, and NbO x N y is 2.3 ≦ x ≦ 2.4 and 0.2 ≦ y ≦ 0.4.

As the oxide layer 113, AZO may be used as the metal oxide layer.

The transparent substrate 100 is a substrate having light transmittance and heat resistance, and a film or sheet of transparent plastic material, transparent glass, or the like may be used.

The repeating unit film in which the oxynitride film layer 111, the Ag layer 112, and the oxide film layer 113 are sequentially stacked is repeatedly stacked two or more times on the transparent substrate 100.

The NbO x N y thin film provided as the oxynitride layer is deposited by reactive sputtering using an Nb target, argon as a sputtering gas, and nitrogen and oxygen as a reactive gas. The ratio of nitrogen to oxygen introduced during reactive sputtering is 50%, and the ratio of oxygen and nitrogen gas to argon is 50%.

[Table 1] below shows the optical property change of the NbO x N y high refractive transparent absorption thin film according to the ratio of oxygen and nitrogen. The refractive index (550 nm), peak transmittance, and minimum reflectance of the NbO x N y high refractive transparent absorbing thin film manufactured by changing the ratio of nitrogen to oxygen from 0% to 200% were measured and compared.

N 2 / O 2 (%) 0 12.5% 28.6% 50% 100% 140% 200% peak
Transmittance (%) 87.93 89.22 86.83 91.54 90.90 89.39 88.30 at least
reflectivity(%) 4.39 3.4 4.53 3.44 3.39 3.37 3.47 Refractive Index (550nm) 2.36 2.34 2.33 2.34 2.39 2.47 2.48

[Table 1] Note, when the ratio is 50% of nitrogen (N 2) to oxygen (O 2), refractive index at wavelength 550㎚ is 2.34, the peak transmittance of 91.5%, the minimum reflectivity is most excellent as an optical 2.34 It was confirmed that it had a characteristic.

3 is a graph showing the characteristics of the filter according to the change of the input of the reaction gas (O 2 , N 2 ) in the manufacture of the PDP filter of the present invention, (a) is a graph showing the peak transmittance, (b) is the minimum reflectance (C) is a graph showing the refractive index.

As can be seen in Figure 3, it can be seen that N 2 / O 2 shows excellent properties at 50% ~ 140%.

As such, by injecting nitrogen together with oxygen as the reaction gas, a highly refractive transparent absorbing thin film which is more stable than the high refractive transparent thin film layer (Nb 2 O 5 ) manufactured by only injecting argon and oxygen and has less arcing can be manufactured. Therefore, it is possible to provide a PDP filter having a low reflectance and an improved visible light transmittance, thereby improving the color purity of the PDP.

The metal thin layer was formed of a silver (Ag) target and argon (250 sccm) was used as the sputtering gas. On the other hand, the metal thin layer may be a silver alloy containing an environmentally stable metal, such as gold, platinum, palladium, copper, indium, tin, etc. to improve the chemical physical stability of Ag.

The metal oxide layer is stacked on top of the metal thin film layer as a broker for preventing the metal layer from being damaged by the oxygen plasma. The AZO target was used as the metal oxide thin layer, and argon was used as the sputtering gas, and oxygen was not injected for the role of the broker layer.

As other materials of the metal oxide layer, TiO 2 , ZnO, SnO 2 , SiN 4 , ZrO 2 , ITO, IZO, Al 2 O 3, or the like may be used.

An upper NbO x N y thin film layer is stacked as the oxynitride film layer 200 on the uppermost layer of the repeating unit film.

The power supply of all the thin film deposition processes used a MF (Mid-Frequency) sputtering power.

The multilayered thin film thus formed has a thickness of 25-30 nm, an Ag layer 112 of 10-20 nm, and an AZO layer of an oxide film layer 113 having an NbO x N y thin film layer of oxynitride layer 111. 5 nm and the NbO x N y thin film layer, which is the upper oxynitride film layer 200, is set to be 25-30 nm.

PDP filters having a 3-Ag structure and a 4-Ag structure can be manufactured according to the number of repetitions using the oxynitride layer 111, the Ag layer 112, and the oxide layer 113 as repeating unit films. Is 3 or more, the thickness of the NbO x N y thin film layer, which is the nearest and most nearest oxynitride layer, is 25-30 nm from the transparent substrate in the repeating unit film, and the thickness of the remaining NbO x N y thin film layer, which is the remaining oxynitride layer, is 55-. It is preferable that it is 60 nm.

In addition, when the number of repeating unit films is 3 or more, the thickness of the nearest metal thin film layer from the transparent substrate among the repeating unit films is 12-13 nm, the thickness of the nearest metal thin film layer is 18-20 nm, and the thickness of the remaining metal thin film layers is 14-16 nm. Is preferably.

4 is a cross-sectional view of a PDP filter having three metal thin layers according to a second embodiment of the present invention. The first oxynitride layer 121, the first Ag layer 122, and the transparent substrate 100 are illustrated in FIG. The first oxide layer 123 is stacked to form a first repeating unit layer 120.

In this case, the thickness of the first NbO x N y thin film layer provided to the first oxynitride layer 121 is 25-30 nm, the thickness of the first Ag layer 122 is 12-13 nm, and the first oxide layer 123 is formed. The thickness of the AZO layer that can be provided is 5 nm.

The second oxidative nitride layer 131, the second Ag layer 132, and the second oxide layer 133 are sequentially stacked on the first repeating unit layer 120 to form a second repeating unit layer 130. In this case, the thickness of the NbO x N y thin film layer provided to the second oxynitride layer 131 is 55-60 nm, the thickness of the second Ag layer 132 is 14-16 nm, and as the second oxide layer 133. The thickness of the AZO layer provided is 5 nm.

The third oxidative nitride layer 141, the third Ag layer 142, and the third oxide layer 143 are stacked on the second repeating unit layer 130 to form a third repeating unit layer 140. In this case, the thickness of the NbO x N y thin film layer that may be provided as the third oxynitride layer 141 is 55-60 nm, the thickness of the third Ag layer 142 is 18-20 nm, and the third oxide layer 143 ), The thickness of the AZO layer is 5 nm.

An NbO x N y thin film layer is stacked as the upper oxynitride film layer 200 on the top of the third repeating unit film 140 and has a thickness of 25-30 nm.

Meanwhile, any one of the repeating unit membranes may further include a broker layer made of a metal such as copper, nickel, chromium, gold, zinc, titanium, tin, palladium, or a compound thereof, and the broker layer may have corrosion resistance Durability can be increased.

In the present exemplary embodiment, after the deposition process of the third oxynitride layer 141 in the third recurring unit layer 140, only Argon (250sccm) is used as the sputtering gas using a NiCr (Ni: Cr = 8: 2 wt%) target. It was prepared by injection.

The PDP filter having the 3-Ag structure manufactured as described above has a sheet resistance of 1.2-1.3 mW / sq.

5 is a graph showing the characteristics of the PDP filter according to the second embodiment of the present invention, (a) is a graph showing the reflectance characteristics for each wavelength, (b) is a graph showing the light transmittance for each wavelength.

Referring to (a) and (b) of FIG. 5, the PDP filter of the 3-Ag structure according to the present invention has a low reflectance of 5-6% and a high light transmittance of 71-75% in the wavelength range of 450-650 nm. You can see that.

6 is a cross-sectional view of a PDP filter having four metal thin layers according to a third embodiment of the present invention. The first oxynitride layer 151, the first Ag layer 152, and the transparent substrate 100 are shown in FIG. The first oxide layer 153 is stacked to form a first repeating unit layer 150.

At this time, as the thickness of the first thin film layer is NbO x N y 25-30㎚ provided by oxy-nitride film layer 151, the thickness of the 1Ag layer 122 is 12-13㎚, the first oxide film layer 153 The thickness of the AZO layer that can be provided is 5 nm.

The second oxidative nitride layer 161, the second Ag layer 162, and the second oxide layer 163 are sequentially stacked on the first repeating unit layer 150 to form a second repeating unit layer 160. In this case, the thickness of the NbO x N y thin film layer provided to the second oxynitride layer 161 is 55-60 nm, the thickness of the second Ag layer 162 is 14-16 nm, and as the second oxide layer 163. The thickness of the AZO layer provided is 5 nm.

The third oxidative nitride layer 171, the third Ag layer 172, and the third oxide layer 173 are stacked on the second repeating unit layer 160 to form a third repeating unit layer 170. In this case, the thickness of the NbO x N y thin film layer provided to the third oxynitride layer 171 is 55-60 nm, the thickness of the third Ag layer 142 is 14-16 nm, and the third oxide layer 173 is provided. The thickness of the AZO layer provided is 5 nm.

On the other hand, in a PDP filter having a 4-Ag structure, the total deposition thickness is increased, and thus, it may be necessary to increase the bonding force between the upper metal thin film layer and the lower oxynitride layer, and for this purpose, the ITO layer 174 as a broker layer. ) May be added.

In the present exemplary embodiment, after the deposition process of the third oxynitride layer 171 in the third repeating unit film 170, deposition is performed using argon as a sputtering gas using an ITO target, and oxygen is not injected. At this time, the thickness of the ITO layer is 5 nm.

The fourth oxidative nitride layer 181, the fourth Ag layer 182, and the fourth oxide layer 183 are stacked on the third repeating unit layer 170 to form a fourth repeating unit layer 180. In this case, the thickness of the NbO x N y thin film layer provided to the fourth oxynitride layer 181 is 55-60 nm, the thickness of the fourth Ag layer 182 is 18-20 nm, and as the fourth oxide layer 183. The thickness of the AZO layer provided is 5 nm.

As mentioned in the second embodiment, after the deposition process of the fourth oxynitride layer 181, the NiCr layer 184 may be formed using a NiCr (Ni: Cr = 8.2 wt%) target.

An upper NbO x N y thin film layer is stacked on the top of the fourth repeating unit layer 180 with the fifth oxynitride layer 200, and the thickness thereof is 25-30 nm.

The produced 4-Ag PDP filter has a sheet resistance of 0.8-0.9 mW / sq.

7 is a graph showing the characteristics of the PDP filter according to the third embodiment of the present invention, (a) is a graph showing the reflectance characteristics for each wavelength, (b) is a graph showing the light transmittance for each wavelength.

Referring to FIGS. 7A and 7B, the 4-Ag PDP filter according to the present invention has a low reflectance of 8-9% and a high light transmittance of 68-72% in the wavelength range of 450-650 nm. You can see that.

The above embodiment is an example for explaining the technical idea of the present invention in detail, and the scope of the present invention is not limited to the above drawings and embodiments.

100: transparent substrate 110: repeating unit film
111 oxynitride layer 112 Ag layer
113: oxide layer 200: upper oxynitride layer

Claims (15)

A transparent substrate;
Two or more repeating unit films including an NbO x N y thin film layer, a metal thin film layer, and a metal oxide layer sequentially stacked on the transparent substrate;
And a top NbO x N y thin film layer stacked on top of the repeating unit film (x> 0 and y> 0). The PDP filter according to claim 1, wherein the NbO x N y thin film layer is 2.3≤x≤2.4 and 0.2≤y≤0.4. The method of claim 1, wherein NbO x N y is formed by using argon (Ar) as a sputtering gas using an Nb target, and deposition using oxygen (O 2 ) and nitrogen (N 2 ) as reaction gases. PDP filter. The PDP filter according to claim 3, wherein the ratio of oxygen and nitrogen (N 2 / O 2 ) is 50% to 140%. The PDP filter of claim 1, wherein a broker layer of a metal or a metal compound is further formed on one of the repeating unit layers. The PDP filter according to claim 1, wherein the metal oxide layer has a thickness of 5 nm. The PDP filter according to claim 1, wherein the repeating unit film has at least four, and one of the repeating unit films further comprises an ITO layer between the NbO x N y thin film layer and the metal thin film layer. The method of claim 1, wherein the repeating unit membrane is at least three,
Wherein the repeating units of the thickness and the nearest contact choewon NbO x N y thin film layer from the transparent substrate of the film is 25-30nm, the thickness of the rest of NbO x N y thin film layer is a PDP filter, characterized in that 55-60nm. The method of claim 1, wherein the repeating unit membrane is at least three,
The thickness of the closest metal thin film layer from the transparent substrate of the repeating unit film is 12-13nm, the thickness of the most nearest metal thin film layer is 18-20nm and the thickness of the remaining metal thin film layer is 14-16nm. The PDP filter according to claim 1, wherein the repeating unit film is three, and has a sheet resistance of 1.2-1.3 Ω / sq, light transmittance of 71-75% and reflectance of 5-6%. The PDP filter according to claim 1, wherein the repeating unit membrane is four, and has a sheet resistance of 0.8-0.9 dB / sq, light transmittance of 68-72% and reflectance of 8-9%. A transparent substrate; Two or more repeating unit films including an NbO x N y thin film layer, a metal thin film layer, and a metal oxide layer sequentially stacked on the transparent substrate; In the method for manufacturing a PDP filter comprising an upper NbO x N y thin film layer stacked on top of the repeating unit film,
The NbO x N y thin film layer uses a Nb target and is deposited using oxygen (O 2 ) and nitrogen (N 2 ) as reaction gases (x> 0 and y> 0). . The method of claim 12, wherein the NbO x N y thin film layer is 2.3≤x≤2.4, 0.2≤y≤0.4. 13. The method of claim 12, wherein the ratio of oxygen and nitrogen (N 2 / O 2 ) is 50% to 140%. The method of claim 12, wherein the NbO x N y thin film layer uses argon as a sputtering gas, and a ratio of oxygen and nitrogen to argon is 1: 1.
KR1020100027741A 2010-03-29 2010-03-29 PDP filter and method for manufacturing the same KR101123143B1 (en)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009157211A (en) 2007-12-27 2009-07-16 Shincron:Kk Optical filter, its manufacturing method and optical equipment equipped with the optical filter

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009157211A (en) 2007-12-27 2009-07-16 Shincron:Kk Optical filter, its manufacturing method and optical equipment equipped with the optical filter

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