KR101111352B1 - Target device for multilayer coatings - Google Patents

Target device for multilayer coatings Download PDF

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KR101111352B1
KR101111352B1 KR1020110051396A KR20110051396A KR101111352B1 KR 101111352 B1 KR101111352 B1 KR 101111352B1 KR 1020110051396 A KR1020110051396 A KR 1020110051396A KR 20110051396 A KR20110051396 A KR 20110051396A KR 101111352 B1 KR101111352 B1 KR 101111352B1
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South Korea
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jig
coating
forge
thin film
target
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KR1020110051396A
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Korean (ko)
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강석용
이인근
권민철
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주식회사 유니벡
(주)코리아스타텍
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE: A target device for multilayer coating is provided to form a multilayer thin film even on a target difficult to deposit by employing a reverse PVD method in which a target material is located above a coating object. CONSTITUTION: A target device for multilayer coating comprises a jig body(10), a pocket jig(20), a shield plate(30), a cooling device(40), and an electrode member(50). The jig body is located in the upper side within a coating chamber(1) and rotated by a drive shaft(12). The jig body has jig holes which are bored at equal angular intervals and have interior protrusions. The pocket jig is divided into inner and outer pockets formed with through-hole type pockets. The shield plate is installed on the upper side of the jig body in order to shield light beam projected from an evaporator(2). The cooling device is provided on the shield plate. The electrode member absorbs and guides light beam emitted from the evaporator.

Description

다층 박막코팅용 타겟장치{Target device for multilayer coatings}Target device for multilayer coatings

본 발명은 다층박막코팅용 타겟장치에 관한 것으로, 보다 상세하게는 박막코팅에 사용되는 타겟을 지지하는 다층박막코팅용 타겟장치에 관한 것이다.The present invention relates to a target device for multilayer thin film coating, and more particularly, to a target device for multilayer thin film coating for supporting a target used for thin film coating.

통상적으로 박막을 코팅하기 위해 진공증착장치 및 이온플레팅장치를 주로 사용하는바, 진공증착장치는 고진공에 놓은 용기 속에 피복(被覆)될 물체와 그 표면에 부착시키려는 금속 등의 입자를 넣어 둔 다음, 히터 or 열전자등의 에너지를 이용하여 금속입자를 가열-증발시켜 물체 표면에 응축해서 부착하는 것을 이용하여 표피(表皮)(코팅)를 붙이는 장치이고, 이온플레팅장치는 PVD(물리증착)법중 한 종류로 이온에너지를 이용하여 타겟(코팅재료)에 조사하여 원자 및 분자의 형태로 기판(Substrate)에 증착하는 장치이다.In general, a vacuum deposition apparatus and an ion plating apparatus are mainly used to coat a thin film. In the vacuum deposition apparatus, particles such as metal to be attached to the surface and an object to be coated are placed in a container placed in a high vacuum. Is a device that attaches the epidermis (coating) by heating and evaporating metal particles using energy such as heater or hot electron, and condensing and attaching it to the surface of the object. One type is a device that irradiates a target (coating material) using ion energy and deposits it on a substrate in the form of atoms and molecules.

이때, 코팅대상인 기판은 상부에 장착되고, 타겟은 하부 또는 측면(단, 측면일 경우는 빔도 측면에 설치됨)에 설치되어, 타겟의 원자/분자가 상방향으로 이동하여 기판상에 박막을 코팅하게 된다. 그러나 이원계의 박막층을 다층으로 형성하기 위해서는 일일이 진공상태를 해제하고 타겟을 교체해야 하는 문제점이 따랐다.At this time, the substrate to be coated is mounted on the upper side, and the target is installed on the lower side or the side (in case of the side, the beam is also installed on the side), and the atoms / molecules of the target move upward to coat the thin film on the substrate. Done. However, in order to form a multi-layered thin film layer of a binary system, the problem of having to release the vacuum state and replace the target one by one.

이에 종래에 개시된 증착장치를 살펴보면, 공개번호 특1996-17912호에서 2개의 증발원을 사용하여 이원계, 합금을 대상소재에 연속적으로 진공증착시키도록 하는 기술이 선공개된바 있다.Looking at the deposition apparatus disclosed in the prior art, in the Patent Publication No. 1996-17912 has been disclosed a technique for continuously vacuum deposition of binary system, alloy on the target material using two evaporation sources.

그러나, 상기 종래 기술은 이원계 타겟을 대상소재에 연속적으로 증착하기 위한 기술이나, 원하는 타겟을 선택적으로 사용한 다층 박막코팅이 불가능한 실정이다.However, the conventional technique is a technique for continuously depositing a binary target on a target material, but the situation where a multi-layer thin film coating using a desired target is selectively impossible.

즉, 열에너지 또는 이온빔에 의해 2개의 증발원에 수용된 타겟이 동시에 증발하여 대상소재상에 증착됨은 물론 서로 상이한 용융점을 가진 타겟을 함께 적용시 증발시점의 차이로 인해 박막의 멀티코팅 및 코팅설계(코팅순서설정)가 불가능한 폐단이 따랐다.That is, the targets accommodated in two evaporation sources by heat energy or ion beam are simultaneously evaporated and deposited on the target material, as well as the multi-coating and coating design of the thin film due to the difference in evaporation time when the targets having different melting points are applied together. It was impossible to set).

한편, 근자에 사용자가 급증하고 있는 스마트폰의 경우, 화질 향상 및 손가락을 통한 정밀한 정보입력 및 조작이 가능하도록 하기 위해 정전용량방식의 고투과율 및 고전도성 타입의 코팅방법에 의해 만들어진 필름 또는 Glass의 수요가 급증하고 있다. 그러나 상기와 기능을 만족하기 위해서는 SiO2-ITO와 같이 단순한 코팅층이 아닌, SiO2-Nb2O5-ITO를 몇 층이나 복합적으로 증착되므로, 다층 박막코팅에 대한 기술개발이 시급한 실정이다.On the other hand, in the case of smartphones that are rapidly increasing in recent years, the film or glass made by the coating method of the high-transmittance and high conductivity type of the capacitive type to improve the image quality and to enable accurate information input and manipulation through the fingers. Demand is surging. However, in order to satisfy the above functions, since several layers of SiO 2 -Nb 2 O 5 -ITO are deposited in complex, rather than a simple coating layer such as SiO 2 -ITO, it is urgent to develop a technology for multilayer thin film coating.

본 발명은 상기한 문제점을 해결하기 위해 착안 된 것으로서, 다수개의 타겟을 사용하여 다층으로 박막을 코팅시 박막층의 멀티코팅 및 임의로 코팅설계(코팅순서 변경)를 용이하게 수행하고, 특히 원자-분자의 무게가 무거워 증착이 어려운 타겟이나 코팅대상의 무게 및 형상의 문제로 코팅대상을 상부에 위치하기 어려운 환경에서 다층 박막을 형성하기 위한 다층 박막코팅용 타겟장치를 제공 하는 것을 특징으로 한다.The present invention has been conceived to solve the above problems, and when performing a multi-layer coating of a thin film using a plurality of targets, it is easy to carry out multi-coating and optionally coating design (change coating order) of the thin film layer, It is characterized by providing a target device for multi-layer thin film coating to form a multi-layer thin film in an environment in which it is difficult to place the coating object on the top due to the problem of the weight and shape of the target or the coating object difficult to deposit due to heavy weight.

이러한 목적을 달성하기 위해 본 발명의 특징은, 코팅실(1)내에서 증발원(2)에 의해 증발하여 코팅대상(3)에 증착되는 타겟소재(4)를 수용하도록 구비되는 다층 박막코팅용 타겟장치에 있어서, 상기 코팅대상(3)과 대향하는 위치에서 구동축(12)에 의해 회전되도록 설치되고, 타겟소재(4)가 포겟지그(20)와 함께 설치되도록 복수개의 지그홀(14)이 등각위치에 구비되는 지그본체(10); 상기 지그본체(10)의 이면에 설치되어 증발원(2)에서 조사되는 빔을 차폐하도록 구비되는 차단플레이트(30); 상기 차단플레이트(30)상에 구비되는 냉각장치(40); 및 상기 지그본체(10)의 어느 일측 지그홀(14)과 대응하도록 냉각장치(40)상에 설치되어 증발원(2)에서 발생되는 빔을 흡수유도하도록 구비되는 전극부재(50);를 포함하여 이루어지는 것을 특징으로 한다.In order to achieve this object, a feature of the present invention is a target for multi-layer thin film coating provided to receive a target material 4 which is evaporated by the evaporation source 2 in the coating chamber 1 and deposited on the coating object 3. In the apparatus, a plurality of jig holes 14 are installed to be rotated by the drive shaft 12 at a position opposite to the coating object 3, and the target material 4 is installed together with the forge jig 20. A jig body 10 provided at an equilateral position; A blocking plate 30 installed on the rear surface of the jig main body 10 to shield the beam irradiated from the evaporation source 2; A cooling device 40 provided on the blocking plate 30; And an electrode member (50) installed on the cooling device (40) so as to correspond to any one of the jig holes (14) of the jig body (10) and provided to absorb the beam generated from the evaporation source (2). Characterized in that made.

이때, 상기 포겟지그(20)는 타겟소재(4)를 2중으로 보호하도록 내ㆍ외측포겟(22)(24)으로 분할 형성되는 것을 특징으로 한다.In this case, the forge jigs 20 are divided into inner and outer forks 22 and 24 so as to protect the target material 4 in duplicate.

또한, 상기 포겟지그(20)는 타겟소재(4)가 설치되도록 포겟(22a)이 형성되고 외주면에 걸림턱(22b)이 형성되는 내측포겟(22)과, 내측포겟(22)의 걸림턱(22a)과 맞물려 위치고정되도록 내주면에 지지턱(24a)이 형성되는 외측포겟(24)으로 구비되는 것을 특징으로 한다.In addition, the forge jig 20 has a fork (22a) is formed so that the target material (4) is installed, the inner fork 22 and the locking jaw 22b is formed on the outer peripheral surface, the locking jaw of the inner fork 22 It is characterized in that it is provided with an outer fork 24, the support jaw 24a is formed on the inner peripheral surface so as to be engaged with the (22a) position.

또한, 상기 포겟(22a)은 관통홀 또는 일단부가 타공판으로 마감되는 것을 특징으로 한다.In addition, the forge 22a is characterized in that the through hole or one end is finished with a perforated plate.

또한, 상기 냉각장치(40)는 높낮이 조절되도록 설치되어 포겟지그(20)의 냉각율이 조절되는 것을 특징으로 한다.In addition, the cooling device 40 is installed to adjust the height is characterized in that the cooling rate of the forge jigs 20 is adjusted.

또한, 상기 냉각장치(40)는 내부에 냉각수가 순환되도록 냉각라인(42)이 구비되는 것을 특징으로 한다.In addition, the cooling device 40 is characterized in that the cooling line 42 is provided to circulate the cooling water therein.

이상의 구성 및 작용에 의하면, 본 발명은 지그본체상에 형성된 지그홀을 통하여 복수개의 타겟소재가 설치되고, 지그본체의 회전위치에 따라 원하는 타겟소재를 선택적으로 사용함에 따라 박막층의 멀티코팅 및 임의로 코팅설계(코팅순서 변경) 변경을 통한 다층 박막의 코팅작업이 효율적으로 이루어지고, 특히 코팅대상을 하부에 위치시키고 타겟소재를 상부에 위치되는 역 PVD방식에 의해 원자-분자의 무게가 무거워 증착이 어려운 타겟이나 코팅대상의 무게 및 형상의 문제로 코팅대상을 상부에 위치하기 어려운 환경에서 다층 박막 코팅이 용이한 효과가 있다.According to the above configuration and operation, the present invention is provided with a plurality of target materials through a jig hole formed on the jig body, multi-coating and optionally coating the thin film layer by selectively using the desired target material according to the rotation position of the jig body Coating of multi-layered thin film by changing design (coating order change) is done efficiently, and it is difficult to deposit due to heavy atomic-molecule weight by reverse PVD method which places coating object on the bottom and target material on the top. Due to the weight and shape of the target or the coating object, the multilayer thin film coating is easily effective in an environment in which the coating object is difficult to be positioned on the top.

도 1은 본 발명에 따른 다층 박막코팅용 타겟장치를 전체적으로 나타내는 구성도.
도 2는 본 발명에 따른 다층 박막코팅용 타겟장치의 지그본체를 확대하여 나타내는 구성도.
도 3a 내지 3b는 본 발명에 따른 포겟지그를 나타내는 구성도.1 is a schematic view showing a target device for multilayer thin film coating according to the present invention as a whole.
Figure 2 is a configuration diagram showing an enlarged jig body of the target device for multilayer thin film coating according to the present invention.
3a to 3b is a block diagram showing a forge jig according to the present invention.

이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시 예를 상세히 설명한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

본 발명은 코팅실(1)내에서 증발원(2)에 의해 증발하여 코팅대상(3)에 증착되는 타겟소재(4)를 수용하도록 구비되는 다층 박막코팅용 타겟장치에 관련되며, 이때 다층 박막코팅용 타겟장치는 다수개의 타겟을 사용하여 다층으로 박막을 코팅시 박막층의 멀티코팅 및 임의로 코팅설계(코팅순서 변경)를 용이하게 수행하기 위해 지그본체(10), 포겟지그(20), 차단플레이트(30), 냉각장치(40), 전극부재(50)를 포함하여 주요구성으로 이루어진다.The present invention relates to a target device for multi-layer thin film coating provided to receive a target material (4) deposited on the coating object (3) by evaporation by the evaporation source (2) in the coating chamber (1), wherein the multi-layer thin film coating The target device for the jig main body 10, the forge jig 20, the blocking plate to easily perform a multi-coating and optionally coating design (change coating order) of the thin film layer when coating a thin film in multiple layers using a plurality of targets 30, the cooling device 40, the electrode member 50, including the main configuration.

본 발명에 따른 다층 박막코팅용 타겟장치는 빔을 증발원으로 사용하는 PVD(물리증착)방식의 코팅장치로서, 원자-분자의 무게가 무거워 증착이 어려운 타겟이나 코팅대상의 무게 및 형상의 문제로 코팅대상을 상부에 위치하기 어려운 경우 도 1처과 같이 코팅대상을 하부에 위치시키고 타겟소재를 상부에 위치되는 역 PVD방식으로 구성된다.The target device for multilayer thin film coating according to the present invention is a PVD (physical vapor deposition) coating apparatus using a beam as an evaporation source, and has a heavy weight of atomic-molecules and is difficult to deposit due to coating problems due to weight and shape of a target or coating target. If it is difficult to position the object on the top, as shown in Figure 1, the coating object is located in the lower portion and the target material is configured in a reverse PVD method located at the top.

본 발명에 따른 지그본체(10)는 코팅대상(3)과 대향하는 위치에서 구동축(12)에 의해 회전되도록 설치되고, 타겟소재(4)가 포겟지그(20)와 함께 설치되도록 복수개의 지그홀(14)이 등각위치에 구비된다. 지그본체(10)는 카본을 포함하는 내열성이 우수한 소재를 사용하여 원형판형상으로 형성되고, 중앙부에 구동축(12)이 연결되어 회전가능하게 지지된다. The jig body 10 according to the present invention is installed to be rotated by the drive shaft 12 at a position opposite to the coating object (3), a plurality of jig so that the target material (4) is installed together with the forge jig (20). The hole 14 is provided in the conformal position. The jig body 10 is formed in a circular plate shape using a material having excellent heat resistance, including carbon, and the drive shaft 12 is connected to the center portion to be rotatably supported.

이때 구동축(12)은 모터를 포함하는 동력원과 연결되어 지그본체(10)의 회전각이 제어되고, 지그본체(10)의 회전각에 따라 어느 일측의 지그홀(14)이 후술하는 냉각장치(40) 및 전극부재(50)와 대응하게 위치된다.At this time, the drive shaft 12 is connected to a power source including a motor to control the rotation angle of the jig body 10, according to the rotation angle of the jig body 10, the jig hole 14 of any one of the cooling apparatus ( 40 and the electrode member 50.

그리고, 지그홀(14)은 후술하는 포겟지그(20)를 설치하기 위한 공간부로서, 관통홀형태로 형성되고, 내주면에 포겟지그(20)를 안착지지하기 위한 돌기가 형성된다.The jig hole 14 is a space part for installing the forge jig 20 to be described later. The jig hole 14 is formed in a through hole shape, and a protrusion for seating and supporting the forge jig 20 is formed on an inner circumferential surface thereof.

이때, 상기 포겟지그(20)는 타겟소재(4)를 2중으로 보호하도록 내ㆍ외측포겟(22)(24)으로 분할 형성되고, 카본을 포함하는 내열성이 우수한 소재로 형성된다. 즉 포겟지그(20)는 타겟소재(4)가 설치되도록 포겟(22a)이 형성되고 외주면에 걸림턱(22b)이 형성되는 내측포겟(22)과, 내측포겟(22)의 걸림턱(22a)과 맞물려 위치고정되도록 내주면에 지지턱(24a)이 형성되는 외측포겟(24)으로 구비된다. In this case, the forge jigs 20 are divided into inner and outer forks 22 and 24 so as to protect the target material 4 in duplicate, and are formed of a material having excellent heat resistance including carbon. That is, the forge jig 20 includes a fork 22a formed with a target material 4 to be installed and a catching jaw 22b formed on an outer circumferential surface thereof, and a catching jaw 22a of the inner forge 22. ) Is provided with an outer fork 24 having a support jaw 24a formed on an inner circumferential surface thereof so as to be engaged with and engaged therewith.

이처럼 도 2처럼 포겟지그(20)가 내ㆍ외측포겟(22)(24)으로 구분되고, 내측포겟(22)이 외측포겟(24) 내주면에 삽입된 상태로 걸림턱(22b)과 지지턱(24a)에 의해 맞물린 상태로 조립설치됨에 따라 타겟소재(4)의 교체가 신속 간편하게 이루어지고, 또 증착공정을 수행하는 중에 타겟소재(4)가 고온으로 가열되더라도 내ㆍ외측포겟(22)(24)이 열전달을 지연시켜 지그본체(10)가 고온에 의한 변형이 방지되는 이점이 있다. As shown in FIG. 2, the forge jigs 20 are divided into inner and outer forks 22 and 24, and the inner and outer forks 22 are inserted into the outer circumference 24 of the inner circumferential surface. The assembly of the target material 4 can be performed quickly and easily by being assembled in the engaged state by 24a, and even when the target material 4 is heated to a high temperature during the deposition process, the inner and outer pockets 22 ( 24) the delay of the heat transfer has the advantage that the jig body 10 is prevented from deformation due to high temperature.

또한, 상기 포겟(22a)은 관통홀 또는 일단부가 타공판으로 마감된다. 도 3a는 포겟(22a)이 관통홀형상으로 형성되어 세라믹을 포함하는 용융점이 높은 타겟소재(4)가 설치되고, 도 3b는 포겟(22a) 하단부가 타공판에 의해 마감되어 Cu, Al를 포함하는 용용점이 낮은 타겟소재(4)가 증발원(2)의 빔에 의해 가열되어 액상화되더라도 아래로 흘러내리지 않고 타공망을 통하여 코팅입자가 공급되는 구조를 나타낸다.In addition, the forge 22a is closed with a through hole or one end thereof. FIG. 3A illustrates a target material 4 having a high melting point including ceramics having a forge 22a formed in a through-hole shape, and FIG. 3B shows a lower end of the forge 22a formed by a perforated plate to include Cu and Al. Even if the target material 4 having a low melting point is heated by the beam of the evaporation source 2 and liquefied, the target particles 4 do not flow down but the coated particles are supplied through the perforated network.

또한, 본 발명에 따른 차단플레이트(30)는 지그본체(10)의 이면에 설치되어 증발원(2)에서 조사되는 빔을 차폐하도록 구비된다. 차단플레이트(30)는 상기 지그본체(10) 및 포겟지그(20)와 동일하게 카본을 포함하는 내열성이 우수한 소재를 판형태로 가공하여 형성되고, 지그본체(10)의 외경사이즈와 동일 내지 확장된 사이즈로 형성되어 지그본체와 이격된 위치에 설치된다. 이에 코팅공정을 수행하는 중에 차단플레이트(30)가 지그본체(10) 이면으로 투과되는 빔을 차폐함으로서, 빔에 의한 지그본체(10) 이면에 배치된 구성부품들의 손상이 방지된다. In addition, the blocking plate 30 according to the present invention is provided on the rear surface of the jig body 10 is provided to shield the beam irradiated from the evaporation source (2). The blocking plate 30 is formed by processing a material having excellent heat resistance including carbon similarly to the jig body 10 and the forge jig 20 in the form of a plate, and the same as the outer diameter size of the jig body 10. It is formed in an extended size and installed at a position spaced apart from the jig body. As the blocking plate 30 shields the beam transmitted to the back surface of the jig body 10 during the coating process, damage to the components disposed on the back surface of the jig body 10 by the beam is prevented.

또한, 본 발명에 따른 냉각장치(40)는 지그본체(10)의 어느 일측 지그홀(14)과 대응하는 위치 또는 차단플레이트(30) 전체에 대응하도록 구비된다.(도 1 내지 도 2에서는 냉각장치(40)가 차단플레이트(30) 전체에 대응하도록 구비된 상태를 도시) 냉각장치(40)는 내부에 냉각수가 순환되도록 냉각라인(42)이 구비된다. 냉각라인(42)은 통상의 방열판 구조로 형성되고, 코팅실(1) 외측에 설치되는 열교환기(도시생략)와 연결되어 가열된 냉각수를 냉각후 재공급하는 순환구조를 가진다.In addition, the cooling device 40 according to the present invention is provided to correspond to the position corresponding to any one of the jig holes 14 of the jig body 10 or the entire blocking plate 30. (In FIGS. Cooling device 40 is provided with a cooling line 42 to circulate the cooling water therein. The cooling line 42 is formed in a general heat sink structure, and is connected to a heat exchanger (not shown) installed outside the coating chamber 1 and has a circulation structure for cooling and resupplying the heated cooling water.

또, 냉각장치(40)는 높낮이 조절되도록 설치되어 포겟지그(20)의 냉각율이 조절된다. 냉각장치(40)는 볼트너트 또는 스크류봉, 실린더, 랙과 피니언을 포함하는 높낮이 조절부재에 의해 위치조절되도록 설치되되, 일예로서, 세라믹을 포함하는 용융점이 높은 소재를 타겟소재(4)로 사용시 냉각장치(40)를 차단플레이트(30)와 근접하게 위치시켜 냉각효율을 높이므로서 차단플레이트(30) 및 지그본체(10), 내ㆍ외측포겟(22)(24)이 고온에 의해 열변형 및 손상이 방지되고, Cu, Al를 포함하는 용용점이 낮은 타겟소재(4)를 사용시에는 냉각장치(40)를 차단플레이트(30)와 이격되게 배치하는 것이 바람직하다. In addition, the cooling device 40 is installed so that the height is adjusted, the cooling rate of the forge jigs 20 is adjusted. The cooling device 40 is installed to be adjusted by a height adjusting member including a bolt nut or a screw rod, a cylinder, a rack, and a pinion. For example, when a material having a high melting point including ceramic is used as the target material 4 By placing the cooling device 40 close to the blocking plate 30 to increase the cooling efficiency, the blocking plate 30 and the jig body 10 and the inner and outer pockets 22 and 24 are thermally deformed due to high temperature. And when damage is prevented, and when using the target material 4 having a low melting point containing Cu, Al, it is preferable to arrange the cooling device 40 spaced apart from the blocking plate 30.

또한, 본 발명에 따른 전극부재(50)는 냉각장치(40)상에 설치되어 증발원(2)에서 발생되는 빔을 흡수유도하도록 구비된다. 전극부재(50)는 자성체로 형성되고, 증발원에서 조사되는 빔이 양(+)이온의 성질을 가지므로, 전극부재(50)를 음(-)극성을 가지도록 구비함에 따라 코팅공정을 수행하는 중에 증발원(2)에서 조사되는 빔이 전극부재(50)가 위치한 방향으로 집중조사된다. 이에 증발원(2)에서 조사되는 빔이 전극부재(50) 저면에 위치되는 타겟소재(4)상으로 집중되므로 원하는 타겟소재(4)를 선택적으로 가열하게 된다.In addition, the electrode member 50 according to the present invention is provided on the cooling device 40 is provided to absorb the beam generated from the evaporation source (2). Since the electrode member 50 is formed of a magnetic material and the beam irradiated from the evaporation source has a positive ion property, the electrode member 50 is provided to have a negative polarity to perform a coating process. The beam irradiated from the evaporation source 2 is concentrated in the direction in which the electrode member 50 is located. The beam irradiated from the evaporation source 2 is concentrated on the target material 4 positioned on the bottom surface of the electrode member 50, thereby selectively heating the desired target material 4.

작동상에 있어서, 우선 코팅대상(3)을 투입하고, 다층 박막 코팅에 사용될 각각의 이원계 타겟소재(4)를 지그본체(10)의 지그홀(14)에 설치하면 코팅준비가 완료된다. 이어서 증발원(2)을 가동하여 빔을 조사하되, 이때 코팅에 사용될 타겟소재(4)를 전극부재(50)와 대응하게 위치시키되, 즉 1차로 코팅할 타겟소재(4)가 설치된 지그홀(14)이 전극부재(50)와 대응하게 위치되도록 지그본체(10)의 회전각을 조절하고, 1차 코팅이 완료되면 지그본체(10)를 등각회전시켜 2차 코팅될 타겟소재(4)가 설치된 지그홀(14)이 전극부재(50)와 대응하게 위치시켜 코팅고정을 수행하는 방식으로 다층 박막을 코팅하게 된다.In operation, the coating object 3 is first introduced, and each binary target material 4 to be used for multi-layer thin film coating is installed in the jig hole 14 of the jig body 10 to complete the coating preparation. Subsequently, the evaporation source 2 is operated to irradiate the beam, and at this time, the target material 4 to be used for coating is positioned to correspond to the electrode member 50, that is, the jig hole 14 in which the target material 4 to be coated first is installed. ) Adjusts the rotation angle of the jig main body 10 so as to correspond to the electrode member 50, and when the primary coating is completed, the jig main body 10 is rotated isotropically to install the target material 4 to be coated secondary. The jig hole 14 is positioned to correspond to the electrode member 50 to coat the multilayer thin film in a manner to perform coating fixing.

이처럼, 지그본체(10)의 회전각도에 따라 타겟소재(4)가 신속 간편하게 교체되어 연속적으로 코팅공정이 수행되므로, 박막층의 멀티코팅 및 임의로 코팅설계(코팅순서 변경)가 효율적으로 수행되는 이점이 있다.As such, since the target material 4 is quickly and easily replaced according to the rotation angle of the jig body 10 and the coating process is performed continuously, the advantage of efficiently performing multi-coating and arbitrarily coating design (change coating order) of the thin film layer is performed. have.

10: 지그본체 20: 포겟지그 30: 차단플레이트
40: 냉각장치 50: 전극부재10: jig main body 20: forget jig 30: blocking plate
40: cooling device 50: electrode member

Claims (6)

코팅실(1)내에서 증발원(2)에 의해 증발하여 코팅실(1) 내측 하부에 위치되는 코팅대상(3)에 증착되는 타겟소재(4)를 수용하도록 구비되는 다층 박막코팅용 타겟장치에 있어서,
상기 코팅대상(3)과 대향하는 코팅실(1) 내부 상측에 위치되어 구동축(12)에 의해 회전되도록 설치되고, 타겟소재(4)가 포겟지그(20)와 함께 설치되도록 내주면에 돌기가 형성되는 복수개의 지그홀(14)이 등각위치에 관통형성되는 지그본체(10);
상기 포겟지그(20)는 내ㆍ외측포겟(22)(24)으로 분할 형성되고, 내측포겟(22) 중앙부에 타겟소재(4)가 수용되도록 포겟(22a)이 관통홀 형태로 형성되고,
상기 지그본체(10)의 상측에 설치되어 증발원(2)에서 조사되는 빔을 차폐하도록 구비되는 차단플레이트(30);
상기 차단플레이트(30)상에 구비되는 냉각장치(40); 및
상기 지그본체(10)의 어느 일측 지그홀(14)과 대응하도록 냉각장치(40)상에 설치되어 증발원(2)에서 발생되는 빔을 흡수유도하도록 구비되는 전극부재(50);를 포함하여 이루어지는 것을 특징으로 하는 다층 박막코팅용 타겟장치.In the target chamber for multi-layer thin film coating is provided to accommodate the target material (4) deposited on the coating object (3) located in the lower inside the coating chamber 1 by the evaporation source (2) in the coating chamber (1) In
Located in the upper side of the coating chamber (1) facing the coating object (3) is installed so as to rotate by the drive shaft 12, the projection on the inner circumferential surface so that the target material (4) is installed with the forge jigs (20) A jig body 10 through which a plurality of jig holes 14 formed are penetrated at a conformal position;
The forge jig 20 is divided into inner and outer forks 22 and 24, and the forge 22a is formed in the form of a through hole so that the target material 4 is accommodated in the center of the inner forge 22.
A blocking plate 30 installed above the jig main body 10 to shield the beam irradiated from the evaporation source 2;
A cooling device 40 provided on the blocking plate 30; And
And an electrode member (50) installed on the cooling device (40) so as to correspond to any one of the jig holes (14) of the jig main body (10) and provided to absorb the beam generated from the evaporation source (2). Target device for multilayer thin film coating, characterized in that. 삭제delete 제 1항에 있어서,
상기 포겟지그(20)는 타겟소재(4)가 설치되도록 포겟(22a)이 형성되고 외주면에 걸림턱(22b)이 형성되는 내측포겟(22)과, 내측포겟(22)의 걸림턱(22a)과 맞물려 위치고정되도록 내주면에 지지턱(24a)이 형성되는 외측포겟(24)이 구비되는 것을 특징으로 하는 다층 박막코팅용 타겟장치.The method of claim 1,
The forge jig 20 includes an inner fork 22 and a catching jaw 22a of the inner forge 22 formed with a fork 22a and a catching jaw 22b formed on an outer circumferential surface thereof so that the target material 4 is installed. Target device for multi-layer thin film coating, characterized in that the outer fork 24 is provided with a support jaw (24a) is formed on the inner circumferential surface to be fixed to the position. 제 1항에 있어서,
상기 포겟(22a)은 하단부가 타공판으로 마감되는 것을 특징으로 하는 다층 박막코팅용 타겟장치.The method of claim 1,
The forge 22a is a target device for multilayer thin film coating, characterized in that the lower end is finished with a perforated plate. 제 1항에 있어서,
상기 냉각장치(40)는 높낮이 조절되도록 설치되어 포겟지그(20)의 냉각율이 조절되는 것을 특징으로 하는 다층 박막코팅용 타겟장치.The method of claim 1,
The cooling device 40 is installed so that the height is adjusted, the target device for multilayer thin film coating, characterized in that the cooling rate of the forge jigs (20) is adjusted. 제 1항에 있어서,
상기 냉각장치(40)는 내부에 냉각수가 순환되도록 냉각라인(42)이 구비되는 것을 특징으로 하는 다층 박막코팅용 타겟장치.The method of claim 1,
The cooling device 40 is a target device for multilayer thin film coating, characterized in that the cooling line 42 is provided to circulate the cooling water therein.
KR1020110051396A 2011-05-30 2011-05-30 Target device for multilayer coatings KR101111352B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117512553A (en) * 2024-01-03 2024-02-06 上海米蜂激光科技有限公司 Vacuum coating method for microcrystalline glass

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5916973A (en) * 1982-07-20 1984-01-28 Fujitsu Ltd Formation of multilayered optical film
JPH02170967A (en) * 1988-09-14 1990-07-02 Mitsubishi Electric Corp Vapor deposition device by electron beam

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5916973A (en) * 1982-07-20 1984-01-28 Fujitsu Ltd Formation of multilayered optical film
JPH02170967A (en) * 1988-09-14 1990-07-02 Mitsubishi Electric Corp Vapor deposition device by electron beam

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117512553A (en) * 2024-01-03 2024-02-06 上海米蜂激光科技有限公司 Vacuum coating method for microcrystalline glass
CN117512553B (en) * 2024-01-03 2024-04-02 上海米蜂激光科技有限公司 Vacuum coating method for microcrystalline glass

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