CN101484966B - Apparatus for electron beam evaporation - Google Patents

Apparatus for electron beam evaporation Download PDF

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Publication number
CN101484966B
CN101484966B CN2007800256069A CN200780025606A CN101484966B CN 101484966 B CN101484966 B CN 101484966B CN 2007800256069 A CN2007800256069 A CN 2007800256069A CN 200780025606 A CN200780025606 A CN 200780025606A CN 101484966 B CN101484966 B CN 101484966B
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evaporation
retaining
distance
electron beam
evaporated
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CN101484966A (en
Inventor
G·马陶什
H·弗拉斯克
J·-S·利比格
V·柯克霍夫
J·-P·海因斯
L·克洛斯
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Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
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Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3132—Evaporating
    • H01J2237/3137—Plasma-assisted co-operation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention relates to an apparatus for electron beam evaporation, comprising a vacuum work chamber (2), a axial emitter (6) for generating an electron beam (7) by which a material (5) to be evaporated can be heated, and a diaphragm (9) disposed between the material (5) and a substrate (3) to be coated, the diaphragm being provided with at least one steam aperture (10) through which material vapor can flow to the substrate (3), wherein the diaphragm (9) comprises a magnetic system (14), by which the electron beam (7) can be deflected through the steam aperture (10) onto the material (5) to be evaporated.

Description

Apparatus for electron beam evaporation
Technical field
For example the present invention relates to for anticorrosion, as the decorations layer, for the EMV shielding or for heat insulation and physical vapour deposition (PVD) application vacuum plating functional film layer on base material; Exactly; Relate to such evaporation source embodiment at this; Wherein through with the electron beam heating evaporation material that axial electron gun sent, to produce steam.
Prior art
Evaporation source by the EB-PVD that extensively adopts has so-called horizontal electron gun, and in its electron beam production process, electron beam 270 degree turn to magnetic device and the crucible that the evaporation material is housed to be integrated in mostly in the functional block of a compact conformation.
The price of this evaporation source is quite cheap, but it is subject to the highest beam power of about 20kW and the accelerating voltage of about 20kV, and then producible evaporation rate is also limited.In addition, real electron beam source (negative electrode and heating arrangements) is in the pressure stage of plating chamber and directly runs into the indoor steam of plating and gas (especially in course of reaction control).Thereby the plating room pressure must be through setting the size of vacuum pump to such an extent that be held quite greatly in low value, the instability when avoiding electron beam source work.
Is than higher but in technical elements EB-PVD variant (DE4428508A1) more efficiently through using axial electron gun with regard to obtaining with regard to required cost of investment, and it can be designed to beam power up to 300kW, the accelerating voltage vapour deposition method up to 60kV.This electron beam source through have be used to allow electron beam through and mostly for circular little opening, separating of playing the choked flow effect at a distance from retaining and Processing Room, and vacuumized with the high pressure vacuum pump that adds separately.For this reason, higher coating speed can carried out and obtain to the vapor deposition operation also under plating room pressure condition with higher., especially at the manufacture field of high speed plating large area substrates (for example under the situation of band and plate), it is unworkable because of the indoor geometry situation of plating sometimes that electron beam direct is injected the vaporising device crucible.So axially electron gun is placed in horizontal installation site usually, electron beam is drawn towards the crucible that the evaporation material is housed by additional magnetic steering, and the magnetic steering is integrated in the vacuum-chamber wall with axial electron gun.
This steering realizes through the hot-wire coil that has the pole shoe that constitutes magnetic field mostly; Steering is main cost factor; It twists linearity and the electron beam focus that turns to magnetic field unfriendly; And its efficient obviously is subject to the geometry of concrete material chosen and plating chamber locular wall, so steering all will be optimized to every kind of improvement of vapor deposition layout mostly again.
Also be all heat evaporating devices of electron beam heating have the broadness of evaporating the particle that in evaporation material surface the sender to distribution, up to the part of tangential almost.This means that quite a few steam flow that increases with the increase of distance between evaporation source and the base material is bombarding base material not, but arrive around the base material and deposit with so-called unordered rete mode there.Except relevant with it plating material loss, unordered rete is in the indoor prolongation that also causes the pumpdown time of plating of the equipment of batch process in batches, and unordered rete means the risk of operation long-time stability as far as continuous production equipment.Therefore, must in these two kinds of equipment, often from the plating chamber, remove unordered rete, this is quite bothersome usually.
The steam flow density of heat evaporating device have evaporation material surface and evaporation particle sender between the indicative angular relationship; This angular relationship is using under the simple scenario of small size vaporising device (with the distances when compared of substrate sizes and vaporising device to base material, the area coverage of evaporation source is relatively little) can be according to common cosine law:
Ф (α)=Ф 0Cos n(α) formula 1
Explain.In this formula, Ф 0Expression is perpendicular to the steam flow density on evaporation material surface.For different hot evaporation coating methods, index n has characteristic value separately.For the high-velocity electron beam vaporising device, index is about 2.5.From formula 1, directly obtain, when the planar substrate that launches with small size vaporising device plating, the bed thickness in evaporation material normal to a surface passes the zone of breakthrough point of substrate plane is maximum, successively decreases with the lateral separation increase subsequently.
Therefore; In order on little base material, to obtain well-proportioned rete; Usually process with recessed bending large area substrates seat, on this substrate holder, some base materials are arranged in the almost constant plane of the steam flow density of vaporising device top and can be with the fixed-site mode by plated films.This nearly equipment, method can't be used for large-area planar substrate.
If planar substrate, then the uniformity of thickness of deposited film can be enhanced through the distance that increases to vaporising device simply., this moment, the steam utilance reduced (ratio that is deposited on inventory and total inventory on the base material), and requirement (requiring residual gas to force down) and its size of plating chamber vacuum system increased because of this required structure space.
A kind of reality common, be used in the conforming method of under the suitable situation of the distance of vaporising device, improving on the large area substrates of uniform film thickness be; Arrange that according to substrate sizes and with the mode of spatial spread the vaporising device of a plurality of small sizes, their density distribution of steam flow separately in substrate plane are suitable for stack.What come with the method is exactly higher equipment cost.
Especially under the situation of the apparatus for electron beam evaporation that adopts the reinforced axial electron gun of power, realized different resolution policies mostly.This resolution policy is that the area coverage that is filled with the crucible of evaporation material is matched with substrate sizes.Through large-area, bidimensional and depend on and the electron beam dynamic steering of time also combine static state to turn to magnetic field sometimes, can control the local energy of injecting evaporation material surface region from electron beam, and then control local evaporation rate.Especially, if the evaporation material is not distillation evaporation, but form the molten bath that the heat balance because of conduction and convection current spreads out, then this method causes the higher base material heat load that caused by thermal radiation.
Sometimes it is special-purpose at a distance from retaining to be used for being by the more equally distributed method of the another kind of the thickness of the base material of plating that plating chamber between vaporising device and base material is provided with by feeding method; Should on the base material throughput direction, have various openings size (at the base material center is little opening size, and opening size increases progressively to the edge) at a distance from retaining., so-called " dog bone shape is at a distance from retaining " also causes the further reduction of steam utilance, because the not heated material of being held back at a distance from retaining can't return vaporising device.
The characteristics of this electron beam evaporation plating method are, mainly according to the bombardment angle and the number of nuclear charges thereof of beam bombardment evaporation material, are not to absorb a certain amount of electronics by the evaporation material, but by a certain amount of electronics of its backscattering.Back-scattered electron carries considerable energy, this energy be take out the operation from evaporation and join in the middle of the scarcely desirable base material heat load.Therefore, in order to make back-scattered electron away from thermosensitive type or charge sensitive type base material, the additional mechanism providing additional operation that also must will be used for producing the magnetic screen field is integrated into the plating chamber, and this magnetic screen field also is called as " magnetic falls ".
The typical kinetic energy E of the particle that produces by heat steam KinAccording to following formula and evaporating temperature T VProportional:
E Kin=k BT VFormula 2
At k BUnder the situation for the Bo Ciman constant, for example for evaporating temperature T V=3000K, the motion that obtains characteristic can E Kin=0.25eV.
This motion can be little than the particle that occurs in the available magnetron sputtering PVD method surpass 1 one magnitude.Logical ground, thermal evaporation especially often must can make up by reinforcing mechanisms with additional particle under the high acceleration situation, to obtain a plurality of anti-compacted zones that adhere to.A kind of method of founding is exactly so-called " plasma-activated evaporation " (DE 4336681A1).In this case, by the additional plasma source between vaporising device and base material (being arc discharge or HF source mostly), produce fine and close plasma.When crossing plasma, (pass through the self-bias effect down at simple scenario, the part evaporation particle is strengthened through applying outer bias-voltage (US3 sometimes by ionization and because the electrical potential difference between base material and the group's plasma; 791,852)), in the edge plasma layer, quicken to shift to base material; The result; The average energy of condensation particle improves, even if condensation rate is high, film quality also obviously improves.
The shortcoming of this arrangement is that part has been lost the important technical advantage of heat evaporating device, promptly with regard to identical dynamic plating rate, has the base material heat load than sputtering method little many (2 times to 3 times).This is because in this activating mechanism, near base material, certainly exist high plasma density and produce additional base material heat load thus.
Summary of the invention
Thereby, the present invention is based on above-mentioned technical problem, a kind of device is provided, can overcome the prior art shortcoming in the apparatus for electron beam evaporation by this device.Especially compared with prior art, this device should be able to realize that compactness and low mechanical structure, the plated film of cost are preserved for a long time, few maintenance, minimum to the magnetic disturbance of plating chamber, utilize efficiently on the base material that steam, unordered rete base material heat load few, that caused by thermal radiation or back-scattered electron are minimum, uniform film thickness under the closely spaced situation of vaporising device to base material is consistent, form splashing and general mounting means still less during crucible secondary fill material.
Obtained the solution of this technical problem through theme with claim 1 characteristic.Dependent claims has provided other favourable design of the present invention.
Apparatus for electron beam evaporation of the present invention comprise the vacuum Processing Room, produce the axial electron gun of the electron beam heat material to be evaporated whereby and be arranged on material and base material to be coated between at a distance from retaining; Should have evaporation apertures at a distance from retaining; Material vapor pervaporation hole arrives base material, and wherein, this comprises magnetic system at a distance from retaining; By magnetic system, electron beam can pass through evaporation apertures and turned to material to be evaporated.
Material evaporation need not crucible just can accomplish the distillation material of rotating cylindrical body (for example for); Or accomplish by a container; This container for example can constitute according to the form of continuous feed formula water-cooled copper crucible again; Perhaps constitute according to the form of heat-insulating block (so-called hot crucible, have or not with for example by the feed that enters a mechanism).
In a preferred embodiment; Be arranged between the container and base material that the evaporation material is housed at a distance from retaining; Several centimeters above upper container edge; And constitute at a distance from the form of retaining according to the horizontal composite decking of container; It constitutes at first heat-resistant material layer (for example graphite carpet veneer, particle layer in bulk, ruckle layer) and just above ground floor, that the capacity of heat transmission the is strong second water-cooled material layer (for example copper layer, pure graphite linings, aluminium lamination, stainless steel layer) of vessel side by capacity of heat transmission difference, in the second layer, is provided with the magnetic steering (the rectangular coil or the Permanentmagnet bar that comprise energising) that is used for electron beam.As alternative, cover plate also can resemble and directly be placed on the container a kind of container cover.
So confirm the size of the adiabatic ground floor of composite decking; Promptly owing to evaporate the surperficial heat input (thermal radiation, back-scattered electron and heat of liquefaction) of material in other words perhaps because such temperature appears in the extra-heated (for example pharoid or suitable to suitably making once electron beam be diverted to the absorber that links to each other with composite decking) in its bottom side from real evaporating point; This temperature is high enough to avoid evaporating material bed appearance on the one hand (under the situation of evaporation material fusion; For example because vapour condensation; And/or container is dripped back/flowed back to formed liquid phase), but this temperature is low on the other hand to fire damage not occurring.In addition, the second strong water-cooled material layer of the capacity of heat transmission that is positioned at ground floor top plays the effect of radiator of cooling off the end face of adiabatic ground floor by regulation, perhaps adds the radiant heat transition zone between the two.The radiant heat transition zone for example can be realized by cushion block between the two.
In retaining, also having one or more openings, the steam that is formed in the container can pass said opening and arrive base material.These openings also are called as evaporation apertures; They are formation like this (the most simply being exactly into rectangle) and definite size; Concerning sending the numerous evaporation particles that send that scatter on the evaporation material surface of steam; Have only the evaporation particle of aiming at base material could pass through evaporation apertures, and remaining evaporation particle is held back at a distance from retaining.
But, at a distance from retaining, the separated retaining in apparatus of the present invention for example also can become to cover shape and be arranged on the top of material to be evaporated except tabular.Following execution mode also is feasible, and it surrounds or surround fully material to be evaporated at a distance from the retaining part.
But; For will be by the base material of feeding method plated film; Also can so for example form evaporation apertures at a distance from retaining by flap; Thereby especially from the part steam flow in vapour density distribution center district just steam send the surface above be trapped within the vaporising device, and do not arrive plating chamber or base material.This for example can realize that, lid can arrange so that under the situation that transfer is suitably arranged, lid also can be heated by the primary electron beam bombardment thus through so-called lid here.Be deposited on the material that covers and break away from the lid of heat through distillation or fusion drippage at this moment, thereby cover the material that is cleaned and is stayed at first and be supplied to the vapor deposition operation again.
Evaporation apertures in apparatus of the present invention constitutes the electron beam incident passage simultaneously.Just on the light incident side edge of evaporation apertures and opposite edges and simultaneously, be provided with many magnets (permanent magnet or magnetic coil) far enough from the plating locular wall, their produce the high-intensity magnetic field (chief component is at horizontal plane and perpendicular to the electron beam incident direction) of localization.For this reason, under the situation that suitably reaches 90 degree steering angles, realized the very little track radius of curvature in part of primary electron beam.Turn to magnetic system at electron beam directly to be placed in the known mechanisms in axial electron gun and/or the locular wall, do not accomplish to pass the like this little electron beam radius of curvature of evaporation apertures.
In one embodiment, electron beam turns to magnetic system to be made up of two parts, and one of them part looks up from electron radiation side and is positioned at before the evaporation apertures, and one other component is positioned at after the evaporation apertures.Can so confirm the size away from the magnetic system part of axial electron gun layout, this part mainly influences back-scattered electron and the secondary electron that is similarly sent by evaporation material surface with the light reflection law, but not too strong to the influence of primary electron beam.In addition because the power spectrum main region of secondary electron is starkly lower than primary electron beam on energy, so for these electronics, possibly mainly occur than primary electron beam also little the track radius of curvature of Duoing.Therefore, most back-scattered electron is trapped within evaporation material surface and the zone between keeping off.
If accomplish evaporation by the crucible of secondary fill material, the evaporation material surface region that then is not located immediately at the evaporation apertures below is used to newly evaporate the supply of material.At this moment, secondary fill area surface should separate through heat-resisting chemical inertness barrier and main evaporation zone surface, so that in melt stage, make possible floating light impurity in the inserts away from the electron beam direct active region.
Can so constitute vaporising device, the conduction of evaporation material is connected perhaps through connecting container and realize at a distance from retaining, and for example to become the gas discharge of arc discharge form be the basis of steam ionization.Can through an integrated suitable electron donor (for example additional hollow cathode, with the tungsten filament of current flow heats or in evaporation apertures can be by the lid of electron beam heating, as thermionic emission mechanism) facilitate the formation of discharge and stablize.The acceleration of the ion that is produced at this moment, is accomplished through near the electric field that in non-uniform magnetic-field, appears at the evaporation apertures.
Realized apparatus for electron beam evaporation in this way, turning to magnetic field directly to be integrated in the vaporising device building block and suitably blocked wherein with the compact conformation mode, thus seldom or even do not interfere the locular wall and the installation of plating chamber.For this reason; Comprise material to be evaporated (band or not with container) and have evaporation apertures and will become universal component with the vaporising device that is integrated in magnetic system wherein at a distance from keeping off; This universal component as far as possible with vacuum chamber in concrete at that time installation site irrelevant, and can be matched with different plating chambers and allow the horizontally mounted of electron beam big gun that general value must expect with simple mode.
In addition, according to of the present invention, near the material to be evaporated at a distance from the retaining or within realize that the direction that electron beam turns to the way in magnetic field also to allow to control back-scattered electron distributes or track.Under simple scenario, this turns to magnetic field to be used for through making back-scattered electron turn to locular wall or at a distance from retaining and relative back-scattered electron shielding base material, and the result will reduce the base material heat load.
, also can expect following magnet arrangement and the track that causes thus, wherein back-scattered electron is almost completely stayed in the zone between evaporation material and the crucible cover and is emitted its energy there valuably, and this causes the improvement of the vaporising device heat efficiency.
In addition, because the density that low energy back-scattered electron in evaporating area and secondary electron have increase, so near the directly phenomenon of the ionization evaporation material of evaporation particle occurs.Because magnetic field is inhomogeneous, so possibly above vaporising device, form vertical potential gradient, this vertical potential gradient causes particle to quicken to shift to base material.And partly realize activated partial through the ion that quickens in the steam in aforesaid, the interlayer between plasma and base material; This mechanism does not require the high-density plasma on base material; Like this, increase the improvement that has realized film quality under the not many situation in heat load.
Allow electron beam directive evaporation material surface and steam to flow out simultaneously in the evaporation apertures that in retaining, suitably forms.Since be integrated at a distance from the retaining or among the special arrangement and the size of electron beam magnetic steering, it is very little that these openings can keep.Realized such steam flow whereby, wherein the most materials steam passes evaporation apertures and arrives base material, rather than around the base material.Like this, realized that on the one hand long operating time is arranged under the situation of certain material reserves, suppressed to form unordered rete on the other hand, unordered rete just means long maintenance break period.
As be used to form evaporation apertures suitably form at a distance from the retaining part and can be allowed to block some the steam flow part that produces by evaporation source by the flap of electron beam heating.Like this; Can so adjust (evening up to a certain extent) outside vaporising device, need not the steam flow density distribution that the addition thereto according to the common cosine distribution of formula 1 just occurs; Promptly will be by the evaporation source of the some below the expansion base material of feeding method plated film with by the desired thickness horizontal homogeneity in application scenario at that time for being arranged on; Can process under little many situation in the spacing of vaporising device to base material, can dwindle the size of plating chamber thus as far as possible.
The steam flow part of being held back at a distance from retaining does not lose as the unordered rete in the vacuum chamber this moment, but stays in the vaporising device, and this also causes the raising of steam utilance.
Because the intact part of separated retaining plays the radiation shield effect and relative base material shelters from the crucible of vaporising device, so reduced the base material heat load.
Especially concerning the container that the material secondary is filled; Wherein the material secondary is filled because of the impurity with high steam pressure in the inserts is easy to aggravation formation and is splashed; That be covered and can be used as the district that sends into of inserts through the separated crucible of barrier and electron beam direct active region district, the material of being sent into before real evaporation earlier through vacuum purification effect (for example through the degassing, fractional distillation, deposition or floating).Perhaps it is harmless that the material that occur this moment splashes; Because splash is held back at a distance from retaining and can't be arrived base material; The result; Realized not having the steady-state evaporation of splashing for base material to be coated, even if the crucible that the material secondary is filled, its plated film duration is not restricted because of the material reserves in the crucible.
Description of drawings
Below, will specify the present invention in conjunction with the preferred embodiments, wherein:
Fig. 1 is the sketch map of expression apparatus of the present invention;
Fig. 2 is the sketch map at a distance from retaining that expression has evaporation apertures.
Embodiment
Fig. 1 schematically illustrates device 1, by said device, be in vacuum Processing Room 2 be vapor deposition copper film (layer) on the polycarbonate plate at base material 3, here, the arrow of base material 3 tops is represented the base material direction of motion.Copper material 5 to be evaporated is arranged in black-fead crucible 4, and the copper material will be heated by the electron beam 7 that axial electron gun 6 is produced.For thermal insulation, crucible 4 is embedded in the layer 8 that is made up of quartzy gravel.
Above crucible 4, be provided with into the separated retaining 9 of crucible 4 cover plate forms, this has evaporation apertures 10 at a distance from retaining, and the evaporation particle 11 of copper can be shifted to base material 3 through the evaporation apertures liter from crucible 4.Comprise two- layer 12 and 13 at a distance from retaining 9.Layer 12 graphite felt by 40 millimeters thick towards copper material 5 constitute.Layer 13 is water-cooled copper plates of 30 millimeters thick.Copper coin comprises magnetic system 14, and it is made up of a plurality of Permanentmagnet bars 15 that are added into 20 millimeters thicknesses in the copper coin, and these Permanentmagnet bar guiding electron beams 7 pass evaporation apertures 10, turn to copper material 5 surfaces, so that evaporation copper material.Because the position of the Permanentmagnet bar 15 in retaining 8 is close to evaporation apertures 10, so can realize the small curvature radius of electron beam 7 through evaporation apertures 10.
Owing to constitute at a distance from the form of retaining 9 with crucible 4 lids; So the evaporation particle 11 of copper can only leave crucible 4 through evaporation apertures 10 towards base material 3; As a result, prevent on the one hand to form " unordered rete ", and on the other hand; The overwhelming majority of course of work heat is left in the zone between cover plate 9 and the crucible 4, and this causes higher operating efficiency.
Magnetic system 14 comprises two-part Permanentmagnet bar 15, and first wherein saw before evaporation apertures 10 from beam direction, and second portion is after evaporation apertures 10.At this moment, second portion has the total magnetic field that is better than first according to the quantity of Permanentmagnet bar 15, so that simultaneously back-scattered electron and secondary electron are turned to the zone between retaining 9 and copper material 5.
In quartz conglomerate layer 8, below evaporation apertures 10, add other Permanentmagnet bar 16, the effect of these Permanentmagnet bars is to make the surface of electron beam 7 with steeper angle bombardment copper material 5.All Permanentmagnet bars 15 and 16 all are orientated according to identical polar.
Fig. 2 has illustrated the separated retaining 20 that has evaporation apertures 21 in schematic top plan view, it also can be used in the device shown in Figure 1.Arrow is also indicated the direction of motion of base material to be coated here.Have tongue 22 at a distance from retaining 20, see that from the base material direction of motion this tongue makes the opening size in hole 21 dwindle to the center.So, up-flow is stopped to the center of the steam flow of base material, thereby has been obtained uniform layer thickness distribution at whole base material width.Following measure is favourable, and material heating can temporarily be turned to tongue 22 with electron beam, heats tongue whereby, and the result is deposited on material steam on the tongue 22 and on tongue, liquefies and return the container that is used for material to be evaporated.
In device of the present invention; It is important not resembling in prior-art devices heavily to drip back material in the container; This is because the electron beam in apparatus of the present invention has less radius of curvature, thus only need littler evaporation apertures, thereby reduced by returning the splashing towards base material that material causes.

Claims (15)

1. apparatus for electron beam evaporation; Comprise vacuum Processing Room (2), produce be used for heating be positioned at container (4) lining material to be evaporated (5) electron beam (7) axial electron gun (6) and put on container at a distance from retaining (9), this has at least one evaporation apertures (10) at a distance from retaining, the material steam passes this evaporation apertures and arrives this base material (3); Wherein do not have to the Mechanical Contact of axial electron gun (6) at a distance from retaining (9); It is characterized in that this comprises magnetic system (14) at a distance from retaining (9), by this magnetic system; This electron beam (7) can pass through this evaporation apertures (10) and redirect to this material to be evaporated (5); Wherein this magnetic system (14) is made up of two parts of permanent magnet (15), and first wherein sees in evaporation apertures (10) before from beam direction, and second portion is arranged on evaporation apertures (10) afterwards.
2. device according to claim 1 is characterized in that, this container is the water-cooled copper crucible.
3. device according to claim 1 is characterized in that, this container (4) constitutes with the form of heat guard, so-called " hot crucible ".
4. device according to claim 1 is characterized in that this container comprises the device that is used to follow the trail of material to be evaporated.
5. device according to claim 1 is characterized in that, this becomes tabular at a distance from retaining (9).
6. device according to claim 1 is characterized in that, this is at a distance from keeping off into the cover shape.
7. device according to claim 1 is characterized in that, this partly or fully surrounds this material at a distance from retaining.
8. device according to claim 1; It is characterized in that; Should have the ground floor (12) that the heat proof material by capacity of heat transmission difference constitutes in a side at a distance from retaining (9), and have the second layer (13) that constitutes by the strong material of the capacity of heat transmission in a side away from this material to be evaporated towards this material to be evaporated.
9. device according to claim 8 is characterized in that, ground floor (12) is made up of graphite felt, hybrid particles or ruckle layer.
10. device according to claim 8 is characterized in that, the second layer (13) is made up of copper, pure graphite, aluminium or stainless steel.
11. device according to claim 8 is characterized in that, the second layer (13) is by water-cooled.
12. device according to claim 1 is characterized in that, this evaporation apertures (10) becomes rectangle.
13. device according to claim 1 is characterized in that, on the base material direction of motion, sees the opening size that this evaporation apertures (21) is distinguished less than this evaporation apertures at the opening size at center on the edge of.
14. device according to claim 1 is characterized in that, this electron beam can turn on the regional area of retaining at this at least.
15. device according to claim 1 is characterized in that, this material to be evaporated or/and this container be energized as the electrode of gas discharge.
CN2007800256069A 2006-07-06 2007-06-28 Apparatus for electron beam evaporation Expired - Fee Related CN101484966B (en)

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DE200610031244 DE102006031244B4 (en) 2006-07-06 2006-07-06 Device for evaporating a material by means of an electron beam and for depositing the vapor on a substrate
DE102006031244.9 2006-07-06
PCT/EP2007/005715 WO2008003425A1 (en) 2006-07-06 2007-06-28 Apparatus for electron beam evaporation

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009014891B4 (en) 2009-03-25 2012-12-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Device for vaporizing a material in a vacuum chamber
CN102315148A (en) * 2010-06-30 2012-01-11 上方能源技术(杭州)有限公司 Substrate conveying device and substrate conveying method for coating purpose
EP2768012B1 (en) * 2013-01-30 2017-06-28 Fraunhofer-ges. zur Förderung der Angewandten Forschung E.V. Method of detaching a disc-shaped single crystal from a base body using an electron beam
EP2971222B1 (en) * 2013-03-15 2024-04-24 RTX Corporation Deposition apparatus and methods
CN103983381B (en) * 2014-05-30 2017-01-25 北京卫星环境工程研究所 System and method for testing single particle adhesive force and electric quantity under vacuum condition
CN107620047A (en) * 2017-08-25 2018-01-23 苏州安江源光电科技有限公司 A kind of reaction chamber and processing method for PVD plated films
JP2021505776A (en) * 2017-12-06 2021-02-18 アリゾナ・シン・フィルム・リサーチ・エルエルシー Systems and methods for additive manufacturing for the adhesion of metal and ceramic materials
DE102018131904A1 (en) * 2018-12-12 2020-06-18 VON ARDENNE Asset GmbH & Co. KG Evaporation arrangement and method
CN110117772B (en) * 2019-06-14 2024-03-15 费勉仪器科技（上海）有限公司 Ultra-stable three-electrode electron beam evaporation source

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345059A (en) * 1965-03-12 1967-10-03 United States Steel Corp Crucible for holding molten metal
US4061871A (en) * 1975-05-02 1977-12-06 Leybold-Heraeus Gmbh & Co. Kg Electron gun for heating, melting and vaporizing purposes, with deflection systems
US4947404A (en) * 1987-11-16 1990-08-07 Hanks Charles W Magnet structure for electron-beam heated evaporation source
DE4225352C1 (en) * 1992-07-31 1993-11-18 Leybold Ag Installation and method for reactive deposition of metal cpd. coatings - with cathode heated to temp. of plasma ignition, allowing high-strength corrosion- resistant coatings to be produced
DE4342574C1 (en) * 1993-12-14 1995-04-13 Hilmar Weinert Band-type vaporisation apparatus
US5614273A (en) * 1993-10-27 1997-03-25 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung, E.V. Process and apparatus for plasma-activated electron beam vaporization

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1814142A1 (en) * 1967-12-13 1969-07-31 Lokomotivbau Elektrotech Device for vapor deposition in a vacuum of large areas
JPS63247358A (en) * 1987-04-03 1988-10-14 Matsushita Electric Ind Co Ltd Apparatus for producing thin metallic film
JPH0294250U (en) * 1989-01-17 1990-07-26
DE4336680C2 (en) * 1993-10-27 1998-05-14 Fraunhofer Ges Forschung Process for electron beam evaporation

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345059A (en) * 1965-03-12 1967-10-03 United States Steel Corp Crucible for holding molten metal
US4061871A (en) * 1975-05-02 1977-12-06 Leybold-Heraeus Gmbh & Co. Kg Electron gun for heating, melting and vaporizing purposes, with deflection systems
US4947404A (en) * 1987-11-16 1990-08-07 Hanks Charles W Magnet structure for electron-beam heated evaporation source
DE4225352C1 (en) * 1992-07-31 1993-11-18 Leybold Ag Installation and method for reactive deposition of metal cpd. coatings - with cathode heated to temp. of plasma ignition, allowing high-strength corrosion- resistant coatings to be produced
US5614273A (en) * 1993-10-27 1997-03-25 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung, E.V. Process and apparatus for plasma-activated electron beam vaporization
DE4342574C1 (en) * 1993-12-14 1995-04-13 Hilmar Weinert Band-type vaporisation apparatus

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JP2009542900A (en) 2009-12-03
DE102006031244B4 (en) 2010-12-16
WO2008003425A1 (en) 2008-01-10
DE102006031244A1 (en) 2008-01-10
CN101484966A (en) 2009-07-15
EP2038912A1 (en) 2009-03-25

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