CN110724918A - Hollow inner ring magnetron sputtering cathode - Google Patents
Hollow inner ring magnetron sputtering cathode Download PDFInfo
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- CN110724918A CN110724918A CN201911095461.0A CN201911095461A CN110724918A CN 110724918 A CN110724918 A CN 110724918A CN 201911095461 A CN201911095461 A CN 201911095461A CN 110724918 A CN110724918 A CN 110724918A
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- magnetron sputtering
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 24
- 238000001816 cooling Methods 0.000 claims abstract description 92
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 55
- 238000004544 sputter deposition Methods 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 20
- 230000008569 process Effects 0.000 claims abstract description 17
- 229910001285 shape-memory alloy Inorganic materials 0.000 claims description 24
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 14
- 239000013077 target material Substances 0.000 claims description 11
- 238000005477 sputtering target Methods 0.000 claims description 9
- 229910052742 iron Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 4
- 239000000498 cooling water Substances 0.000 claims description 3
- 235000017166 Bambusa arundinacea Nutrition 0.000 claims 1
- 235000017491 Bambusa tulda Nutrition 0.000 claims 1
- 241001330002 Bambuseae Species 0.000 claims 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 claims 1
- 239000011425 bamboo Substances 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000007888 film coating Substances 0.000 abstract description 2
- 238000009501 film coating Methods 0.000 abstract description 2
- 238000003860 storage Methods 0.000 description 9
- 238000000576 coating method Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- -1 argon ions Chemical class 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical class [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical class [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002505 iron Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Abstract
The invention discloses a hollow inner ring magnetron sputtering cathode, which comprises a target cylinder and a water cooling sleeve, wherein the target cylinder is arranged in a hollow manner, the water cooling sleeve is sleeved outside the target cylinder, a gap is arranged between the water cooling sleeve and the target cylinder, one side of the target cylinder, which is far away from the water cooling sleeve, is a sputtering surface, two ends of the water cooling sleeve are respectively provided with a first magnetic ring and a second magnetic ring, and the magnetic poles of the first magnetic ring and the second magnetic ring are opposite and are coaxially arranged; the target cylinder is heated to expand in the sputtering process and can be tightly attached to the water-cooling sleeve to realize heat exchange. The invention has the following beneficial effects: the magnetron sputtering cathode can realize omnibearing film coating without rotating a workpiece.
Description
Technical Field
The invention relates to the field of magnetron sputtering coating, in particular to a hollow inner ring magnetron sputtering cathode.
Background
Physical vapor deposition is a technique for depositing a thin film on a substrate by using a physical method, and a magnetron sputtering technique is one of physical vapor deposition techniques. In the magnetron sputtering coating technology, high-energy ions (usually argon ions accelerated by an electric field) bombard the surface of a target, ions or atoms on the surface of the target exchange energy with the incident high-energy ions and then are splashed out of the surface of the target, and the ions or atoms are deposited on a substrate to form a film.
The cathode used in the magnetron sputtering coating process is divided into a planar cathode and a rotary cathode according to the structural shape, and the rotary cathode is more and more widely used due to the advantages of high utilization rate of the target material of the rotary cathode, large loadable electric power and the like. The target material of the rotary cathode and the target material inner cylinder are fixed together to form a whole, generally referred to as a target cylinder for short, when the cathode works, the target material rotates, and the magnetic rod is fixedly and immovably positioned at the center of the target cylinder, so that the magnetic rod provides a fixed and stable magnetic field, sputtering can be stably and continuously performed, and the surface of the target material can be uniformly etched.
However, in order to obtain a thin film of uniform thickness, the workpiece needs to be rotated to change its orientation facing the glow zone. In certain situations, rotation of the workpiece adds complexity to the apparatus and thus leaves room for improvement.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a hollow inner ring magnetron sputtering cathode, which can realize omnibearing film coating without rotating a workpiece.
The technical purpose of the invention is realized by the following technical scheme: a hollow inner ring magnetron sputtering cathode comprises a target cylinder and a water cooling sleeve, wherein the target cylinder is arranged in a hollow mode, the water cooling sleeve is sleeved outside the target cylinder, a gap is formed between the water cooling sleeve and the target cylinder, one side, far away from the water cooling sleeve, of the target cylinder is a sputtering surface, a first magnetic ring and a second magnetic ring are arranged at two ends of the water cooling sleeve respectively, and magnetic poles of the first magnetic ring and the second magnetic ring are opposite and are arranged coaxially; the target cylinder is heated to expand in the sputtering process and can be tightly attached to the water-cooling sleeve to realize heat exchange.
The invention is further configured to: the target cylinder is of a cylindrical structure and comprises a sputtering target material and a sputtering inner cylinder, and the sputtering inner cylinder is positioned between the sputtering target material and the water-cooling sleeve.
The invention is further configured to: and clamping grooves for respectively placing the first magnetic ring and the second magnetic ring are formed in the two ends of the water-cooling sleeve.
The invention is further configured to: the water-cooling sleeve pipe is prepared by metal material, the water-cooling sleeve pipe is including water inlet, retaining chamber and the delivery port that communicates in proper order, delivery port and water inlet are located water-cooling sleeve pipe's both ends respectively, outside cooling water enters into to retaining intracavity from the water inlet, finally by retaining chamber to delivery port discharge.
The invention is further configured to: the sputtering inner cylinder is internally provided with a cooling pipeline through which water can pass, the water-cooling sleeve is internally provided with two connecting holes, when the target cylinder is heated to expand and is tightly attached to the water-cooling sleeve during sputtering, the two connecting holes are respectively communicated with two ends of the cooling pipeline, and one end of each connecting hole is communicated with the water storage cavity to form a circulating water cooling circulation pipeline.
The invention is further configured to: the water outlet is positioned below the water-cooling sleeve.
The invention is further configured to: the water-cooling sleeve is prepared from a shape memory alloy material, the aperture of the connecting hole is variable, the shape memory alloy material for preparing the water-cooling sleeve is trained, the diameter of the connecting hole is 5mm when the connecting hole is below a preset temperature, and the diameter of the connecting hole is increased by 5% -15% compared with the diameter of the connecting hole when the connecting hole is above the preset temperature.
The invention is further configured to: the shape memory alloy is an iron-based shape memory alloy.
The invention is further configured to: the temperature above the preset temperature is 50-80 ℃, and the temperature below the preset temperature is 20-50 ℃.
The invention is further configured to: the aperture of a cooling pipeline positioned in the sputtering inner barrel is 5.75mm, and one end of the cooling pipeline facing the connecting hole is coaxially arranged with the connecting hole.
In conclusion, the invention has the following beneficial effects: in actual use, a closed annular magnetic field is formed in the target cylinder because the magnetic poles of the first magnetic ring and the second magnetic ring are opposite. The workpiece to be coated can be placed in the target cylinder, during the sputtering process, argon ions for magnetic field constraint sputtering bombard the sputtering surface of the target cylinder, atoms on the sputtering surface are collided out, and the atoms are deposited on the surface of the workpiece to be coated in the target cylinder to form a film.
In the process, the annular magnetic field is provided by the magnetic ring structure, and the sputtering surface is a circular surface, so that atoms impacted by the sputtering surface are uniformly distributed around the workpiece to be coated, and the omnibearing coating can be realized without rotating the workpiece. Meanwhile, the surface of the target can be uniformly etched without rotating the cathode.
Specifically, the following are mentioned: in the sputtering process, most energy is converted into heat, so that the temperature of the target cylinder can be increased in the sputtering process, and the target cylinder is further heated to expand and is tightly attached to the water-cooling sleeve to realize heat exchange. After sputtering is finished, the target cylinder is cooled and contracted, and a gap between the target cylinder and the water-cooling sleeve is exposed, so that the target cylinder is convenient to disassemble.
Drawings
In order to more clearly illustrate the detailed description of the invention or the technical solutions in the prior art, the drawings that are needed in the detailed description of the invention or the prior art will be briefly described below. Throughout the drawings, like elements or portions are generally identified by like reference numerals. In the drawings, elements or portions are not necessarily drawn to scale.
Fig. 1 is a schematic structural diagram of a magnetron sputtering cathode according to an embodiment of the present invention.
Reference numerals: 1. a target cylinder; 2. water-cooling the sleeve; 3. sputtering the surface; 4. a first magnetic ring; 5. a second magnetic ring; 6. sputtering a target material; 7. sputtering the inner cylinder; 8. a clamping groove; 9. a water inlet; 10. a water storage cavity; 11. a water outlet; 12. a cooling pipeline; 13. and connecting the holes.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and therefore are only examples, and the protection scope of the present invention is not limited thereby.
It is to be noted that, unless otherwise specified, technical or scientific terms used herein shall have the ordinary meaning as understood by those skilled in the art to which the invention pertains.
As shown in fig. 1, a hollow inner ring magnetron sputtering cathode includes a hollow target cylinder 1 and a water-cooling sleeve 2 sleeved outside the target cylinder 1, a gap is provided between the water-cooling sleeve 2 and the target cylinder 1, and a sputtering surface 3 is arranged on one side of the target cylinder 1 away from the water-cooling sleeve 2. The two ends of the water-cooling sleeve 2 are respectively provided with a first magnetic ring 4 and a second magnetic ring 5, and the magnetic poles of the first magnetic ring 4 and the second magnetic ring 5 are opposite and are coaxially arranged.
In actual use, a closed annular magnetic field is formed in the target cylinder 1 because the magnetic poles of the first magnetic ring 4 and the second magnetic ring 5 are opposite. The workpiece to be coated can be placed in the target cylinder 1, during the sputtering process, argon ions for magnetic field constraint sputtering bombard the sputtering surface 3 of the target cylinder 1, atoms on the sputtering surface 3 are knocked out and deposited on the surface of the workpiece to be coated in the target cylinder 1 to form a film.
In the process, the annular magnetic field is provided by the magnetic ring structure, and the sputtering surface 3 is a circular surface, so that atoms impacted by the sputtering surface 3 are uniformly distributed around the workpiece to be coated, and the omnibearing coating can be realized without rotating the workpiece. Meanwhile, the surface of the target can be uniformly etched without rotating the cathode.
Specifically, the following are mentioned: in the sputtering process, most energy is converted into heat, so that the temperature of the target cylinder 1 can be increased in the sputtering process, and the target cylinder is further heated to expand and is tightly attached to the water-cooling sleeve 2 to realize heat exchange. After sputtering is finished, the target cylinder 1 is cooled and contracted, and a gap between the target cylinder 1 and the water-cooling sleeve 2 is exposed, so that the target cylinder is convenient to disassemble.
Further, the target cylinder 1 is a cylindrical structure and comprises a sputtering target 6 and a sputtering inner cylinder 7, and the sputtering inner cylinder 7 is positioned between the sputtering target 6 and the water-cooling sleeve 2. The sputtering surface 3 is located on one side of the sputtering target 6.
Further, the sputtering target 6 is a material used as a cathode in the magnetron sputtering technology, and it is separated from the cathode in the form of molecules, atoms or ions under the impact of positive cations and is redeposited on the surface of the anode, in other words, the target is a target material of high-speed particle bombardment, and targets of different materials, such as a silicon target, a titanium target, a tin target, a gold target or a tungsten target, can be selected according to the needs of coating.
Furthermore, the two ends of the water-cooling sleeve 2 are provided with clamping grooves 8 for respectively placing the first magnetic ring 4 and the second magnetic ring 5.
Further, the water-cooling sleeve 2 is made of a metal material, the water-cooling sleeve 2 includes a water inlet 9, a water storage cavity 10 and a water outlet 11 which are sequentially communicated, and the water outlet 11 and the water inlet 9 are respectively located at two ends of the water-cooling sleeve 2. The external cooling water enters the water storage cavity 10 from the water inlet 9 and is finally discharged from the water storage cavity 10 to the water outlet 11. In the above process, since the water-cooled jacket 2 is made of a metal material, it has thermal conductivity. After the water-cooling sleeve 2 is physically cooled through the water storage cavity 10, the target cylinder 1 is in contact with the water-cooling sleeve 2 after being heated and thermally expanded in the sputtering process, so that the water-cooling sleeve 2 in a low-temperature state can perform one-time cooling operation on the target cylinder 1 in a high-temperature state.
Furthermore, a cooling pipeline 12 through which water can flow is arranged in the sputtering inner cylinder 7, and two connecting holes 13 are arranged in the water-cooling sleeve 2. When the target cylinder 1 expands due to heating during sputtering and is tightly attached to the water-cooling sleeve 2, the two connecting holes 13 are respectively communicated with two ends of the cooling pipeline 12, and one end of each connecting hole 13 is communicated with the water storage cavity 10, so that a circulating water cooling circulation pipeline is formed.
In the above process, the target cylinder 1 is heated to expand and then closely contacts the water-cooling sleeve 2. At this time, the water inlet 9 communicated with the outside water flow is opened, and the water outlet 11 is closed. So that the water flow entering from the water inlet 9 is accumulated in the water storage cavity 10, and part of the water flow enters the cooling pipeline 12 positioned in the sputtering inner barrel 7 through the connecting hole 13 for heat exchange. When the water storage cavity 10, the connecting hole 13 and the cooling pipeline 12 are filled with water, the water outlet 11 is opened to take out the heat of the target cylinder 1 through water flow. The secondary cooling operation is described above.
It should be noted that the water outlet 11 is located below the water-cooling sleeve 2, and when the sputtering operation is stopped, the water inlet 9 is closed to open the water outlet 11, so that the water flow is drained from the water outlet 11 under the action of its own weight.
Further, the water-cooling sleeve 2 is made of shape memory alloy material, and the aperture of the connecting hole 13 is variable. The training of the shape memory alloy material for manufacturing the water-cooling sleeve 2 shows that the diameter of the connecting hole 13 is 5mm below the preset temperature, and the diameter of the connecting hole 13 above the preset temperature is increased by 5-15% compared with the diameter of the connecting hole 13 below the preset temperature.
When the target cylinder 1 is in close contact with the water-cooling sleeve 2 after being heated and expanded, the heat carried by the target cylinder 1 can be directly transferred to the connecting hole 13 of the water-cooling sleeve 2, although the water-cooling sleeve 2 can cool the target cylinder 1 once at the same time, the heat can be continuously generated in the sputtering process because the target cylinder 1 can continuously generate the heat, and the heat can be continuously provided without stopping the sputtering process. In the case of the target cylinder 1 which is continuously heated, the primary cooling is not enough to effectively prevent the temperature of the target cylinder 1 from continuously increasing, so that the secondary cooling is combined for operation.
The water-cooling sleeve 2 can change the memory effect of the original shape when reaching a certain temperature after being trained according to the shape memory alloy. When the temperature is approximately preset, the diameter of the connecting hole 13 can be increased, the water supply amount of the connecting hole 13 to the cooling pipeline 12 is increased, the cooling efficiency of the sputtering inner barrel 7 is increased, and the temperature of the target barrel 1 can be controlled.
The shape memory alloy can be iron series shape memory alloy, copper nickel series shape memory alloy, copper aluminum series shape memory alloy. However, in the present application, the shape memory alloy is preferably made of iron, because the shape memory alloy can attract the first magnetic ring 4 and the second magnetic ring 5, the positioning of the first magnetic ring 4 and the second magnetic ring 5 can be conveniently realized. Meanwhile, after attracting the iron-based shape memory alloy, the magnetic force of the first magnetic ring 4 and the second magnetic ring 5 is enhanced. This is because: the iron-based shape memory alloy can be magnetized by an external magnetic field (namely, the magnetic field formed by the first magnetic ring 4 and the second magnetic ring 5), and the magnetized iron-based shape memory alloy also has the magnetic field, so that the magnetic force of the first magnetic ring 4 and the second magnetic ring 5 can be enhanced after the iron-based shape memory alloy is attracted according to the principle that the magnetic fields can be superposed, and further the sputtering coating can be conveniently carried out.
It should be noted that: the process of training the aperture for shape memory alloys is known in the art, wherein it is common practice to repeatedly place a shape memory alloy with a connection hole 13 in a cold or hot environment for contraction and thermal expansion, after repeated training for many times, the shape memory alloy with a connection hole 13 described herein naturally has the above properties.
Further, the temperature above the preset temperature is 50-80 ℃, and the temperature below the preset temperature is 20-50 ℃.
Further, the aperture of the cooling pipeline 12 positioned in the sputtering inner cylinder 7 is 5.75mm, and one end of the cooling pipeline 12 facing the connecting hole 13 is coaxially arranged with the connecting hole 13.
In the present application, the diameter of the connecting hole 13 is 5mm, which is smaller than the diameter of the cooling pipeline 12 by 5.75mm, and the connecting hole 13 is coaxially arranged, so that the cooling medium is conveniently conveyed to the cooling pipeline 12 by the connecting hole 13. Meanwhile, the aperture of the connecting hole 13 is variable, the aperture is increased when the aperture is larger than the preset temperature, the aperture value after the aperture is increased does not exceed 5.75, the flow of the medium can be increased as much as possible while the cooling medium can be conveyed to the cooling pipeline 12, the passing of large-flow cooling liquid is facilitated, and the cooling capacity of the target cylinder 1 is improved.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention, and they should be construed as being included in the following claims and description.
Claims (10)
1. A hollow inner ring magnetron sputtering cathode is characterized in that: the sputtering target comprises a hollow target cylinder (1) and a water-cooling sleeve (2) sleeved outside the target cylinder (1), wherein a gap is formed between the water-cooling sleeve (2) and the target cylinder (1), one side, far away from the water-cooling sleeve (2), of the target cylinder (1) is a sputtering surface (3), two ends of the water-cooling sleeve (2) are respectively provided with a first magnetic ring (4) and a second magnetic ring (5), and the magnetic poles of the first magnetic ring (4) and the second magnetic ring (5) are opposite and are coaxially arranged; the target cylinder (1) is heated to expand in the sputtering process and can be tightly attached to the water-cooling sleeve (2) so as to realize heat exchange.
2. The hollow inner ring magnetron sputtering cathode according to claim 1, characterized in that: the target cylinder (1) is of a cylindrical structure and comprises a sputtering target material (6) and a sputtering inner cylinder (7), and the sputtering inner cylinder (7) is located between the sputtering target material (6) and the water-cooling sleeve (2).
3. The hollow inner ring magnetron sputtering cathode according to claim 2, characterized in that: clamping grooves (8) for placing the first magnetic ring (4) and the second magnetic ring (5) are formed in the two ends of the water-cooling sleeve (2) respectively.
4. The hollow inner ring magnetron sputtering cathode according to claim 3, characterized in that: the water-cooling sleeve pipe (2) is prepared by metal material and forms, water-cooling sleeve pipe (2) are including water inlet (9), retaining chamber (10) and delivery port (11) that communicate in proper order, delivery port (11) and water inlet (9) are located the both ends of water-cooling sleeve pipe (2) respectively, outside cooling water enters into in retaining chamber (10) from water inlet (9), finally by retaining chamber (10) to delivery port (11) discharge.
5. The hollow inner ring magnetron sputtering cathode according to claim 4, characterized in that: sputter inner tube (7) and embed cooling tube way (12) that have the confession rivers to pass through, water-cooling sleeve pipe (2) embeds there are two connecting holes (13), works as when target section of thick bamboo (1) is heated expansion and water-cooling sleeve pipe (2) close adhesion when sputtering, two connecting hole (13) communicate with the both ends of cooling tube way (12) respectively, every the one end and the retaining chamber (10) of connecting hole (13) are linked together to constitute circulating water cooling circulation pipeline.
6. The hollow inner ring magnetron sputtering cathode according to claim 5, characterized in that: the water outlet (11) is positioned below the water-cooling sleeve (2).
7. The hollow inner ring magnetron sputtering cathode according to claim 6, characterized in that: the water-cooling sleeve (2) is prepared by shape memory alloy material, the aperture of connecting hole (13) is variable aperture, makes the shape memory alloy material of water-cooling sleeve (2) through the training, is in when presetting the temperature below the diameter of connecting hole (13) is 5mm, is in when presetting the temperature above the diameter of connecting hole (13) than when presetting the temperature below the diameter of connecting hole (13) increase by 5% -15%.
8. The hollow inner ring magnetron sputtering cathode according to claim 7, characterized in that: the shape memory alloy is an iron-based shape memory alloy.
9. The hollow inner ring magnetron sputtering cathode according to claim 8, characterized in that: the temperature above the preset temperature is 50-80 ℃, and the temperature below the preset temperature is 20-50 ℃.
10. The hollow inner ring magnetron sputtering cathode according to claim 9, characterized in that: the aperture of a cooling pipeline (12) positioned in the sputtering inner barrel (7) is 5.75mm, and one end of the cooling pipeline (12) facing the connecting hole (13) is coaxially arranged with the connecting hole (13).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911095461.0A CN110724918A (en) | 2019-11-11 | 2019-11-11 | Hollow inner ring magnetron sputtering cathode |
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| CN201911095461.0A CN110724918A (en) | 2019-11-11 | 2019-11-11 | Hollow inner ring magnetron sputtering cathode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112511125A (en) * | 2020-09-23 | 2021-03-16 | 广东广纳芯科技有限公司 | Method for manufacturing surface acoustic wave device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4385979A (en) * | 1982-07-09 | 1983-05-31 | Varian Associates, Inc. | Target assemblies of special materials for use in sputter coating apparatus |
| US5228963A (en) * | 1991-07-01 | 1993-07-20 | Himont Incorporated | Hollow-cathode magnetron and method of making thin films |
| CN103826422A (en) * | 2014-02-13 | 2014-05-28 | 中国科学院工程热物理研究所 | Microchannel cooling device |
| CN105839065A (en) * | 2016-05-26 | 2016-08-10 | 电子科技大学 | Magnetron sputtering film coating device and method and preparation method of nano particles |
| CN106676491A (en) * | 2017-02-28 | 2017-05-17 | 中国科学院合肥物质科学研究院 | Cylindrical surface magnetron sputtering device |
-
2019
- 2019-11-11 CN CN201911095461.0A patent/CN110724918A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4385979A (en) * | 1982-07-09 | 1983-05-31 | Varian Associates, Inc. | Target assemblies of special materials for use in sputter coating apparatus |
| US5228963A (en) * | 1991-07-01 | 1993-07-20 | Himont Incorporated | Hollow-cathode magnetron and method of making thin films |
| CN103826422A (en) * | 2014-02-13 | 2014-05-28 | 中国科学院工程热物理研究所 | Microchannel cooling device |
| CN105839065A (en) * | 2016-05-26 | 2016-08-10 | 电子科技大学 | Magnetron sputtering film coating device and method and preparation method of nano particles |
| CN106676491A (en) * | 2017-02-28 | 2017-05-17 | 中国科学院合肥物质科学研究院 | Cylindrical surface magnetron sputtering device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112511125A (en) * | 2020-09-23 | 2021-03-16 | 广东广纳芯科技有限公司 | Method for manufacturing surface acoustic wave device |
| CN112511125B (en) * | 2020-09-23 | 2024-01-26 | 广东广纳芯科技有限公司 | Method for manufacturing surface acoustic wave device |
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