KR101043115B1 - 표시 장치 및 그 제조 방법 - Google Patents
표시 장치 및 그 제조 방법 Download PDFInfo
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- KR101043115B1 KR101043115B1 KR1020090016353A KR20090016353A KR101043115B1 KR 101043115 B1 KR101043115 B1 KR 101043115B1 KR 1020090016353 A KR1020090016353 A KR 1020090016353A KR 20090016353 A KR20090016353 A KR 20090016353A KR 101043115 B1 KR101043115 B1 KR 101043115B1
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Abstract
Description
Claims (8)
- 기판 상에 p형 박막 트랜지스터를 포함하는 표시 장치로서,상기 p형 박막 트랜지스터는,게이트 전극의 상면에 절연막을 개재하여 반도체층이 형성되고,상기 반도체층의 상면에 이격부를 갖고 서로 대향 배치되는 드레인 전극과 소스 전극이 형성되고,상기 드레인 전극과 상기 반도체층의 계면, 및 상기 소스 전극과 상기 반도체층의 계면에, p형 불순물의 확산층이 형성되어 구성되고,상기 p형 불순물의 확산층은, 상기 드레인 전극과 소스 전극을 구성하는 주재료가 상기 반도체층에 확산되어 형성되어 있는 것을 특징으로 하는 표시 장치.
- 기판 상에 p형 박막 트랜지스터 및 n형 박막 트랜지스터를 포함하는 표시 장치로서,이들 각 박막 트랜지스터는, 게이트 전극의 상면에 절연막을 개재하여 반도체층이 형성되고, 상기 반도체층의 상면에 이격부를 갖고 서로 대향 배치되는 드레인 전극과 소스 전극이 형성되어 구성되며,상기 p형 박막 트랜지스터는, 상기 드레인 전극과 상기 반도체층의 계면, 및 상기 소스 전극과 상기 반도체층의 계면에, p형 불순물의 확산층이 형성되고,상기 p형 불순물의 확산층은, 상기 드레인 전극과 소스 전극을 구성하는 주재료가 상기 반도체층에 확산되어 형성되고,상기 n형 박막 트랜지스터는, 상기 드레인 전극과 상기 반도체층의 계면, 및 상기 소스 전극과 상기 반도체층의 계면에, n형 불순물이 도프된 반도체층이 개재되어 있는 것을 특징으로 하는 표시 장치.
- 기판 상에 p형 박막 트랜지스터 및 n형 박막 트랜지스터를 포함하는 표시 장치로서,이들 각 박막 트랜지스터는, 게이트 전극의 상면에 절연막을 개재하여 반도체층이 형성되고, 상기 반도체층의 상면에 이격부를 갖고 서로 대향 배치되는 드레인 전극과 소스 전극이 형성되어 구성되며,상기 p형 박막 트랜지스터는, 상기 드레인 전극과 상기 반도체층의 계면, 및 상기 소스 전극과 상기 반도체층의 계면에, p형 불순물의 확산층이 형성되고,상기 p형 불순물의 확산층은, 상기 드레인 전극과 소스 전극을 구성하는 주재료가 상기 반도체층에 확산되어 형성되고,상기 n형 박막 트랜지스터는, 상기 드레인 전극과 상기 반도체층의 계면, 및 상기 소스 전극과 상기 반도체층의 계면에, n형 불순물이 도프된 반도체층 및 상기 드레인 전극과 소스 전극의 재료의 상기 반도체층으로의 확산을 방지하는 확산 배리어층의 순차 적층체가 개재되어 있는 것을 특징으로 하는 표시 장치.
- 제1항에 있어서,상기 드레인 전극 및 소스 전극은, 알루미늄, 갈륨, 인듐, 탈륨 중 어느 하나의 재료를 주재료로 하여 구성되어 있는 것을 특징으로 하는 표시 장치.
- 제1항에 있어서,상기 반도체층은 다결정 반도체층으로 형성되어 있는 것을 특징으로 하는 표시 장치.
- 제1항에 있어서,상기 반도체층은 다결정 반도체층과 비정질 반도체층의 순차 적층체로 구성되어 있는 것을 특징으로 하는 표시 장치.
- 기판 상에 p형 박막 트랜지스터를 포함하고, 그 p형 박막 트랜지스터는, 게이트 전극의 상면에 절연막을 개재하여 반도체층이 형성되며, 상기 반도체층의 상면에 이격부를 갖고 서로 대향 배치되는 드레인 전극과 소스 전극이 형성되어 구성되는 표시 장치의 제조 방법으로서,어닐링을 실시함으로써, 상기 드레인 전극과 상기 반도체층의 계면, 및 상기 소스 전극과 상기 반도체층의 계면에, p형 불순물의 확산층을 형성하는 것을 특징으로 하는 표시 장치의 제조 방법.
- 제7항에 있어서,상기 드레인 전극 및 소스 전극을 알루미늄, 갈륨, 인듐, 탈륨 중 어느 하나의 재료를 주재료로 하여 형성한 것을 특징으로 하는 표시 장치의 제조 방법.
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Application Number | Priority Date | Filing Date | Title |
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JP2008049885A JP5363009B2 (ja) | 2008-02-29 | 2008-02-29 | 表示装置およびその製造方法 |
JPJP-P-2008-049885 | 2008-02-29 |
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KR20090093849A KR20090093849A (ko) | 2009-09-02 |
KR101043115B1 true KR101043115B1 (ko) | 2011-06-20 |
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JP (1) | JP5363009B2 (ko) |
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JP5111167B2 (ja) * | 2008-03-06 | 2012-12-26 | 株式会社ジャパンディスプレイイースト | 液晶表示装置 |
FR2944140B1 (fr) * | 2009-04-02 | 2011-09-16 | Commissariat Energie Atomique | Dispositif de detection d'image electronique |
KR20110081694A (ko) * | 2010-01-08 | 2011-07-14 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터의 제조 방법 및 표시 장치의 제조 방법 |
JP5708910B2 (ja) * | 2010-03-30 | 2015-04-30 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
TWI666776B (zh) | 2014-06-20 | 2019-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置以及包括該半導體裝置的顯示裝置 |
JP6544166B2 (ja) * | 2015-09-14 | 2019-07-17 | 信越化学工業株式会社 | SiC複合基板の製造方法 |
CN105470310A (zh) * | 2016-01-21 | 2016-04-06 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、阵列基板和显示装置 |
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JPH08204032A (ja) * | 1995-01-20 | 1996-08-09 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
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JPH0563196A (ja) * | 1991-09-04 | 1993-03-12 | Hitachi Ltd | 薄膜半導体装置及びその製造方法並び液晶表示装置 |
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US20090218575A1 (en) | 2009-09-03 |
EP2096673B1 (en) | 2021-06-02 |
US8058654B2 (en) | 2011-11-15 |
CN101521210A (zh) | 2009-09-02 |
EP2096673A3 (en) | 2011-04-20 |
JP5363009B2 (ja) | 2013-12-11 |
JP2009206437A (ja) | 2009-09-10 |
CN101521210B (zh) | 2012-05-23 |
KR20090093849A (ko) | 2009-09-02 |
TW201001711A (en) | 2010-01-01 |
TWI401805B (zh) | 2013-07-11 |
EP2096673A2 (en) | 2009-09-02 |
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