KR101023597B1 - Al기 합금 스퍼터링 타겟 및 그 제조 방법 - Google Patents
Al기 합금 스퍼터링 타겟 및 그 제조 방법 Download PDFInfo
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- KR101023597B1 KR101023597B1 KR1020090027332A KR20090027332A KR101023597B1 KR 101023597 B1 KR101023597 B1 KR 101023597B1 KR 1020090027332 A KR1020090027332 A KR 1020090027332A KR 20090027332 A KR20090027332 A KR 20090027332A KR 101023597 B1 KR101023597 B1 KR 101023597B1
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- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 126
- 239000000956 alloy Substances 0.000 title claims abstract description 126
- 238000005477 sputtering target Methods 0.000 title claims abstract description 93
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 23
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 22
- 229910052802 copper Inorganic materials 0.000 claims abstract description 22
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 22
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 239000007921 spray Substances 0.000 claims description 26
- 238000000137 annealing Methods 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 17
- 238000009689 gas atomisation Methods 0.000 claims description 14
- 238000000280 densification Methods 0.000 claims description 5
- 238000002844 melting Methods 0.000 abstract description 16
- 230000008018 melting Effects 0.000 abstract description 16
- 230000006698 induction Effects 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 6
- 229910000838 Al alloy Inorganic materials 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 48
- 230000000694 effects Effects 0.000 description 33
- 239000007789 gas Substances 0.000 description 30
- 230000008569 process Effects 0.000 description 24
- 238000004544 sputter deposition Methods 0.000 description 23
- 239000010408 film Substances 0.000 description 22
- 238000009718 spray deposition Methods 0.000 description 18
- 239000010409 thin film Substances 0.000 description 17
- 238000005096 rolling process Methods 0.000 description 15
- 238000003754 machining Methods 0.000 description 12
- 239000002245 particle Substances 0.000 description 12
- 229910000765 intermetallic Inorganic materials 0.000 description 10
- 229910000858 La alloy Inorganic materials 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 229910000583 Nd alloy Inorganic materials 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 5
- 229910052761 rare earth metal Inorganic materials 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
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- 238000011156 evaluation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910018507 Al—Ni Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
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- 239000012535 impurity Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000010730 cutting oil Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
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- 239000002994 raw material Substances 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 238000003852 thin film production method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Analytical Chemistry (AREA)
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Abstract
Description
Claims (15)
- Ni 및 Co로 구성되는 A군으로부터 선택되는 적어도 1종과,Cu 및 Ge으로 구성되는 B군으로부터 선택되는 적어도 1종과,La, Gd 및 Nd으로 구성되는 C군으로부터 선택되는 적어도 1종을 함유하는 Al기 합금 스퍼터링 타겟이며, 그 경도가 비커스 경도(HV)로 35 이상인, Al기 합금 스퍼터링 타겟.
- 제1항에 있어서, 상기 A군의 총 함유량이 0.05원자% 이상, 1.5원자% 이하,상기 B군의 총 함유량이 0.1원자% 이상, 1원자% 이하,상기 C군의 총 함유량이 0.1원자% 이상, 1원자% 이하인, Al기 합금 스퍼터링 타겟.
- 제1항에 있어서, 상기 A군으로부터 Ni만이 선택되고, 상기 B군으로부터 Cu만이 선택되고, 상기 C군으로부터 La만이 선택된, Al기 합금 스퍼터링 타겟.
- 제2항에 있어서, 상기 A군으로부터 Ni만이 선택되고, 상기 B군으로부터 Cu만이 선택되고, 상기 C군으로부터 La만이 선택된, Al기 합금 스퍼터링 타겟.
- Ni 및 Co로 구성되는 A군을 총 함유량으로 0.05원자% 이상, 1.5원자% 이 하,Cu 및 Ge으로 구성되는 B군을 총 함유량으로 0.1원자% 이상, 1원자% 이하,La, Gd 및 Nd으로 구성되는 C군을 총 함유량으로 0.1원자% 이상, 1원자% 이하를 함유하는 Al기 합금의 850 내지 1000℃의 용탕을 얻는 공정과,상기 용탕을, 가스/메탈비가 6N㎥/㎏ 이상에서 가스 아토마이즈하여 Al기 합금을 미세화하는 공정과,상기 미세화한 Al기 합금을 스프레이 거리가 900 내지 1200㎜인 조건에서 컬렉터에 퇴적하여, 프리폼을 얻는 공정과,상기 프리폼을 치밀화 수단에 의해 치밀화하여, 치밀체를 얻는 공정과,상기 치밀체를 450℃ 이하에서 소성 가공을 행하는 공정과,상기 소성 가공 후의 치밀체를 100 내지 300℃에서 어닐링을 행하는 공정을 포함하는, Al기 합금 스퍼터링 타겟의 제조 방법.
- 제5항에 있어서, 상기 A군으로부터 Ni만이 선택되고, 상기 B군으로부터 Cu만이 선택되고, 상기 C군으로부터 La만이 선택된, Al기 합금 스퍼터링 타겟의 제조 방법.
- 제1항에 있어서, 상기 A군으로부터 Co만이 선택되고, 상기 B군으로부터 Ge만이 선택되고, 상기 C군으로부터 La만이 선택된, Al기 합금 스퍼터링 타겟.
- 제2항에 있어서, 상기 A군으로부터 Co만이 선택되고, 상기 B군으로부터 Ge만이 선택되고, 상기 C군으로부터 La만이 선택된, Al기 합금 스퍼터링 타겟.
- 제5항에 있어서, 상기 A군으로부터 Co만이 선택되고, 상기 B군으로부터 Ge만이 선택되고, 상기 C군으로부터 La만이 선택된, Al기 합금 스퍼터링 타겟의 제조 방법.
- 제1항에 있어서, 상기 A군으로부터 Ni만이 선택되고, 상기 B군으로부터 Ge만이 선택되고, 상기 C군으로부터 Nd만이 선택된, Al기 합금 스퍼터링 타겟.
- 제2항에 있어서, 상기 A군으로부터 Ni만이 선택되고, 상기 B군으로부터 Ge만이 선택되고, 상기 C군으로부터 Nd만이 선택된, Al기 합금 스퍼터링 타겟.
- 제5항에 있어서, 상기 A군으로부터 Ni만이 선택되고, 상기 B군으로부터 Ge만이 선택되고, 상기 C군으로부터 Nd만이 선택된, Al기 합금 스퍼터링 타겟의 제조 방법.
- 제1항에 있어서, 상기 A군으로부터 Co만이 선택되고, 상기 B군으로부터 Ge만이 선택되고, 상기 C군으로부터 Nd만이 선택된, Al기 합금 스퍼터링 타겟.
- 제2항에 있어서, 상기 A군으로부터 Co만이 선택되고, 상기 B군으로부터 Ge만이 선택되고, 상기 C군으로부터 Nd만이 선택된, Al기 합금 스퍼터링 타겟.
- 제5항에 있어서, 상기 A군으로부터 Co만이 선택되고, 상기 B군으로부터 Ge만이 선택되고, 상기 C군으로부터 Nd만이 선택된 Al기 합금 스퍼터링 타겟의 제조 방법.
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006118044A (ja) * | 1997-12-24 | 2006-05-11 | Toshiba Corp | スパッタリングターゲットの製造方法 |
KR20060092145A (ko) * | 2005-02-17 | 2006-08-22 | 가부시키가이샤 고베 세이코쇼 | 디스플레이 장치 및 그의 제조용 스퍼터링 타겟 |
JP2006225687A (ja) * | 2005-02-15 | 2006-08-31 | Kobe Steel Ltd | Al−Ni−希土類元素合金スパッタリングターゲット |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006118044A (ja) * | 1997-12-24 | 2006-05-11 | Toshiba Corp | スパッタリングターゲットの製造方法 |
JP2006225687A (ja) * | 2005-02-15 | 2006-08-31 | Kobe Steel Ltd | Al−Ni−希土類元素合金スパッタリングターゲット |
KR20060092145A (ko) * | 2005-02-17 | 2006-08-22 | 가부시키가이샤 고베 세이코쇼 | 디스플레이 장치 및 그의 제조용 스퍼터링 타겟 |
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