CN108140699B - 发光器件,发光元件封装和照明装置 - Google Patents
发光器件,发光元件封装和照明装置 Download PDFInfo
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- CN108140699B CN108140699B CN201680056091.8A CN201680056091A CN108140699B CN 108140699 B CN108140699 B CN 108140699B CN 201680056091 A CN201680056091 A CN 201680056091A CN 108140699 B CN108140699 B CN 108140699B
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Abstract
一个实施例涉及一种发光元件,一种用于制造发光元件的方法,一种发光元件封装以及一种发光器件。根据一个实施例的发光元件可以包括:第一导电半导体层;在第一导电半导体层上的有源层;在有源层上的第二导电半导体层;在第二导电半导体层上的透光欧姆层;与第一导电半导体层电连接的第一电极;以及在透光欧姆层上的第二电极。发光元件可以包括彼此面对的两个第一边和彼此面对的两个第二边。第一边的宽度大于第二边的宽度,并且第一边和第二边可以彼此垂直。第一分支电极和第二分支电极之间的距离是其中任一个第二边的宽度的1/6至1/2。
Description
技术领域
实施例涉及发光器件,发光器件的制造方法,发光器件封装和发光器件。
背景技术
发光器件(LED)是具有将电能转换成光能的特性的p-n结二极管,并且可以通过混合周期表上的第III族和第V族元素来形成。LED可以通过调整化合物半导体的组成比来表现各种颜色。
在LED中,当施加正向电压时,n层的电子与p层的空穴结合,并且可以产生与导带和价带之间的带隙能量相对应的能量,并且当能量以光的形式发射时,LED发挥作用。
例如,氮化物半导体由于其高热稳定性和宽带隙能量而受到光学器件与高输出电子器件的开发领域的极大关注。具体而言,使用氮化物半导体的蓝色LED、绿色LED和UV LED被商业化并广泛使用。
取决于电极的位置,LED可以被分类为横向型和垂直型。
根据相关技术的LED中的横向型LED形成为使得氮化物半导体层形成在衬底上并且两个电极层设置在氮化物半导体层的上侧上。
同时,近来,发光器件已被应用于各种IT装置和移动电话,并且小型 LED芯片已被用作IT装置和移动电话的发光器件。例如,最近,手机采用了小型横向LED芯片。
同时,由于在相关技术中n电极和p电极之间的距离根据移动电话的 LED芯片的尺寸的限制而被限制,所以存在以下技术问题:没有反映考虑电流散布长度的电极之间的距离的设计。
发明内容
【技术问题】
一个实施例旨在提供一种能够增强光学特性的发光器件,一种发光器件的制造方法,一种发光器件封装和一种照明装置。
【技术解决方案】
根据实施例的发光器件可以包括第一导电半导体层,在第一导电半导体层上的有源层,在有源层上的第二导电半导体层,在第二导电半导体层上的透光欧姆层,电连接到第一导电半导体层的第一电极,以及在透光欧姆层上的第二电极。
在该实施例中,第一电极可以包括第一焊盘电极和第一分支电极,并且第二电极可以包括第二焊盘电极和第二分支电极。
发光器件可以包括彼此面对的两个第一边和彼此面对的两个第二边。第一边的宽度可以大于第二边的宽度,并且第一边和第二边可以彼此正交。第一分支电极和第二分支电极之间的距离可以是任何一个第二边的宽度的1/6 至1/2。
例如,本实施例的发光器件可以包括彼此面对的两个长边和彼此面对的两个短边,并且长边和短边可以彼此正交。因此,发光器件可以具有包括长边和短边的矩形形状。在这种情况下,第一分支电极和第二分支电极之间的距离可以是发光器件的短边宽度的1/6至1/2。
根据实施例的发光器件封装可以包括发光器件。
根据实施例的发光器件可以包括发光器件封装。
【有益效果】
实施例可以提供一种能够通过考虑电流散布长度设计电极之间的距离来改善其光学特性的发光器件、一种发光器件的制造方法、一种发光器件封装和一种照明装置。
例如,根据实施例,在设计发光器件芯片的电极时,特别是关于n型半导体层上的第一分支电极与p型半导体层上的第二分支电极之间的距离的设计,通过分析发光器件芯片并设计适合于Ls的分支电极之间的距离,计算电流散布长度Ls,从而可以降低工作电压Vf,并且存在光输出Po处于同等水平或被增加的技术效果。
附图说明
图1是根据第一实施例的发光器件的平面图。
图2是根据第一实施例的发光器件的截面图。
图3是根据实施例的发光器件的电流扩散的概念图。
图4是根据实施例的发光器件的特性变化的第一数据。
图5是根据实施例的发光器件的特性变化的第二数据。
图6是根据第二实施例的发光器件的平面图。
图7是根据第二实施例的发光器件的局部截面图。
图8是根据第三实施例的发光器件的局部截面图。
图9是根据实施例的发光器件封装的截面图。
具体实施方式
在实施例的描述中,将理解的是,当层(或膜)、区域、图案或结构被称为在另一层(或膜)、区域、图案或结构“上/上方”或“下方”时,“上/上方”和“下方”的术语包括“直接”或“通过***另一层(间接)”的含义。此外,将在附图的基础上对每层的“上/上方”和“下方”作出参照。
(实施例)
图1是根据第一实施例的发光器件100的平面图,并且图2是根据实施例的发光器件100的沿线I-I'截取的截面图。
根据实施例的发光器件100可以包括在衬底105上的发光结构110。
衬底105可以包括绝缘衬底或导电衬底,并且可以由单层或多层形成。例如,蓝宝石(Al2O3)、SiC、Si、GaAs、GaN、ZnO,GaP、InP、Ge和Ga2O3中的至少一种或其组合可以用于衬底105,但是本发明不限于此。
预定的凹凸结构R可以形成在衬底105上以提高光提取效率,但是不限于此。
在该实施例中,可以在衬底105上形成预定的缓冲层107,以减轻其后形成的发光结构110与衬底105之间的晶格失配。
缓冲层107可以由单层或多层形成,并且可以由GaN、InN、AlN、InGaN、 AlGaN、InAlGaN和AlInN中的至少一种或其组合形成,但是不限于此。
发光结构110可以包括衬底105上的第一导电半导体层112,第一导电半导体层112上的有源层114和有源层114上的第二导电半导体层116。
第一导电半导体层112可以包括实施为掺杂有第一导电掺杂剂的III-V族化合物半导体。例如,当第一导电半导体层112是n型半导体层时,第一导电掺杂剂可以包括诸如Si、Ge、Sn、Se和Te之类的n型掺杂剂,但是不限于此。
第一导电半导体层112可以包括具有InxAlyGa1-x-yN(0≤x≤1、0≤y ≤1、0≤x+y≤1)的组成式的半导体材料,并且可以形成为单层或多层。例如,第一导电半导体层112可以由GaN、InN、AlN、InGaN、AlGaN、InAlGaN、 AlInN、AlGaAs、InGaAs、AlInGaAs、GaP、AlGaP、InGaP、AlInGaP和InP 中的至少一种形成。
有源层114是发射具有由有源层(发光层)的材料的本征能带确定的能量的光的层,其中通过第一导电半导体层112注入的电子和此后通过第二导电半导体层116注入的空穴彼此相遇。
有源层114可以形成有单量子阱结构、多量子阱(MQW)结构、量子线结构和量子点结构中的至少任一个。
有源层114可以具有阱层/势垒层结构。例如,有源层114可以形成有 InGaN/GaN、InGaN/InGaN、GaN/AlGaN、InAlGaN/GaN、GaAs/AlGaAs、 GaP/AlGaP、InGaAs/AlGaAs和InGaP/AlGaP中的任意一对或多对结构,但不限于此。阱层可以由具有比势垒层的带隙低的带隙的材料形成。
根据实施例,可以在有源层114上形成电子阻挡层(未示出)。例如,电子阻挡层可以由AlxInyGa(1-x-y)N(0≤x≤1,0≤y≤1)基的半导体形成,并且可以具有比有源层114的能带隙更高的能带隙。电子阻挡层可以有效地阻挡用p型离子注入并溢出的电子,由此提高空穴注入效率。
在该实施例中,第二导电半导体层116可以是掺杂第二导电掺杂剂的 III-V族化合物半导体层。例如,第二导电半导体层116可以包括具有 InxAlyGa1-x-yN(0≤x≤1、0≤y≤1、0≤x+y≤1)的组成式的半导体材料,并且可以由单层或多层形成。在第二导电半导体层116是p型半导体层的情况下,第二导电掺杂物可以包括作为p型掺杂剂的Mg、Zn、Ca、Sr和Ba。
接下来,可以去除第二导电半导体层116的一部分和有源层114的一部分,使得可以暴露第一导电半导体层112的一部分。
在该实施例中,可以在第二导电半导体层116上形成透光欧姆层120,并且可以在透光欧姆层120上形成第二电极140,并且第一电极130可以形成在暴露的第一导电半导体层112上。
透光欧姆层120可以通过将单种金属、金属合金、金属氧化物等堆叠成多层来形成,以便高效地执行载流子注入。透光欧姆层120可以由透光电极形成,由此提高光提取效率并降低工作电压,从而可以提高可靠性。
例如,透光欧姆层120可以包括铟锡氧化物(ITO)、铟锌氧化物(IZO)、铟锌锡氧化物(IZTO)、铟铝锌氧化物(IAZO)、铟镓锌氧化物(IGZO)、铟镓锡氧化物(IGTO)、铝锌氧化物(AZO)、锑锡氧化物(ATO)、镓锌氧化物(GZO)、IZO亚硝酸盐(IZON)、Al-Ga ZnO(AGZO)、In-GaZnO(IGZO)、 ZnO、IrOx、RuOx、NiO、RuOx/ITO、Ni/IrOx/Au、Ni/IrOx/Au/ITO、Ag、 Ni、Cr、Ti、Al、Rh、Pd、Ir、Ru、Mg、Zn、Pt、Au和Hf中的任意一种或其组合,但不限于这些材料。
透光欧姆层120可以是40至60nm。当透光欧姆层120的厚度小于40nm 时,薄层电阻可能增加并且电特性可能劣化,并且当透光欧姆层120的厚度大于60nm时,透光率可能降低并且光提取效率可能降低。
在该实施例中,第一电极130可以包括第一焊盘电极132和第一分支电极134,并且第二电极140可以包括第二焊盘电极142和第二分支电极144。
第一电极130或第二电极140可以形成为单层或多层,并且可以由钛(Ti)、铬(Cr)、镍(Ni)、铝(Al)、金(Au)、钨(W)、钼(Mo)中的任意一种或其合金形成,但不限于此。
实施例的技术问题之一是提供能够通过考虑电流散布长度的电极距离设计来改进发光器件的光学特性的发光器件。
同时,在相关技术中,为了提高电流扩散效率,第一分支电极和第二分支电极之间的距离被最大地分开,并且近来已经在移动电话或IT装置中采用小型LED芯片。当这种小型LED芯片的面积较小时,例如,发光器件的芯片的平面是矩形,短边的长度约为300μm或更小,使得芯片本身的面积很小,因此通过尽可能分开分支电极之间的距离不可能适当地提高电流扩散效率。
图3是根据实施例的发光器件的电流扩散的概念图。
例如,根据电极之间的距离的电流扩展密度(J(x))的关系表达式如以下等式1所示。
[等式1]
(其中x:第二分支电极144的中心处的电流密度扩展长度,rc:第二分支电极144的半宽度,Ls:电流散布长度)
电流散布长度Ls由以下等式2表示。
[等式2]
(其中t:透光欧姆层的厚度,n理想:发光器件的二极管理想因子,ρ:透光欧姆层的电阻率)
可以通过下面的等式3(肖克利方程)获得n理想的值。
[等式3]
I=e(V-IRs)/(n理想kT)
因此,当如下所述以电流散布长度Ls设计第一分支电极134和第二分支电极144之间的距离(x-rc)时,可以获得最佳电流扩展密度(J(x))。
x-rc≒Ls→J(x)↑
也就是说,根据该实施例,在设计发光器件芯片的电极时,特别是关于 n型半导体层上的第一分支电极和p型半导体层上的第二分支电极之间的距离的设计,通过分析发光器件芯片并设计适合于Ls的分支电极之间的距离,来计算电流散布长度Ls,可以降低工作电压Vf,并且可以获得如下效果:光输出Po处于同等水平或被增加。
例如,参考图1,发光器件芯片100可以具有多边形形状,并且本实施例的发光器件芯片100可以具有包括长边和短边的矩形形状。例如,发光器件可以包括彼此面对的两个第一边和彼此面对的两个第二边。第一边的宽度 L大于第二边的宽度S,并且第一边和第二边可以彼此正交。第一分支电极和第二分支电极之间的距离可以是任何一个第二边的宽度的1/6至1/2。
例如,本实施例的发光器件芯片100可以包括彼此面对的两个长边和彼此面对的两个短边,并且长边和短边可以彼此正交。长边可以是发光器件芯片100的外边缘当中的长边,并且短边可以是发光器件芯片100的外边缘当中的相对较短的边。
在该实施例中,第一分支电极134与第二分支电极144之间的距离D可以是发光器件的短边宽度S的1/6至1/2。在这种情况下,在该实施例中,由于第二分支电极144与发光器件的边缘之间的距离被控制为发光器件的短边宽度S的1/6至1/4,所以随着电流扩散效率增加,工作电压可以降低并且发光效率可以增加。在这种情况下,发光器件的边缘可以是与第二分支电极144 平行的最近边缘。另外,在该实施例中,由于第二分支电极144与发光器件的边缘之间的距离被控制为发光器件的短边宽度S的1/6至1/5,所以可以进一步增加电流扩散效率。
更具体地,将描述第一分支电极134与第二分支电极144之间的距离D。在本实施例的发光器件的面积为300000μm2或更小的小尺寸发光芯片的情况下,短边的宽度S可以为约200至300μm,并且第一分支电极134与第二分支电极144之间的距离D可以是发光器件的短边宽度S的1/6至1/2。例如,在本实施例的发光器件的面积约为300000μm2的情况下,短边的宽度S可以为约300μm,并且长边的宽度L可以为约1000μm,第一分支电极134与第二分支电极144之间的距离D可以为约50至150μm,但不限于此。
另外,在本实施例的发光器件的面积为约300000μm2或更小的小尺寸发光芯片的情况下,短边的宽度S可以为约200至300μm并且第一分支电极134 与第二分支电极144之间的距离D可以是发光器件的短边宽度S的3/10至 11/30。例如,在本实施例的发光器件的面积约为300000μm2的情况下,短边的宽度S为约300μm,并且长边的宽度L为约1000μm,并且由于第一分支电极134和第二分支电极144之间的距离D被控制为约90到110μm,所以电流扩散效率可以被进一步提高。
根据该实施例,在设计发光器件芯片的电极时,特别是关于n型半导体层上的第一分支电极134与p型半导体层上的第二分支电极144之间的距离的设计,通过分析发光器件芯片并且控制适于Ls的分支电极之间的距离D 来计算电流散布长度Ls可以降低工作电压Vf,并且存在技术效果:光输出 Po处在同等水平或增加。
例如,在用于IT或移动电话的横向芯片尺寸中,短边的宽度S可以被确定在约200至300μm的范围内,并且可以在300000μm2或更少的整个芯片面积内确定长边。本实施例的发光器件可以是小型LED芯片,并且其平面面积可以是约300000μm2或更小。此外,本实施例的发光器件可以包括矩形平面形状,并且可以包括彼此面对的两个长边和彼此面对的两个短边,并且任何一个短边的宽度S可以为约200至300μm,但不限于此。
由于第一分支电极134和第二分支电极144之间的距离D有助于提高工作电压Vf和光输出Po,所以需要考虑到芯片的当前散布长度Ls而最佳地设计分支电极之间的距离D。
例如,当用于IT或移动电话的横向芯片的面积为300000μm2或更小,并且短边宽度S为约200至300μm时,第一分支电极134与第二分支电极144 之间的距离D可以设计为约50到150μm。另外,在本实施例中,当第一分支电极134与第二分支电极144之间的距离为90至110μm时,如下表1所示,可以进一步改善光学特性。
[表1]
例如,当根据等式2计算测试对象的芯片的电流散布长度Ls,得到110 μm时,表1示出当分支电极之间的距离不同时的工作电压Vf和发光强度Po 数据的结果,如表1中的实验例和比较例。
根据该示例,与比较例不同,当第一分支电极134和第二分支电极144 之间的距离D被控制为发光器件的短边宽度S的1/6至1/2时,如在实验例中那样,工作电压Vf降低并且发光强度Po也增加。
图4是根据实施例的发光器件的第一特性数据,图5是根据实施例的发光器件的第二特性数据。
例如,图4中的第一实验(E1),第二实验(E2)和第三实验(E3)的芯片设计信息显示在下面的表2中。
[表2]
如图4所示,随着分支电极之间的距离从约110μm变化到约90μm,强度 (X轴数据)可以向上移动到右侧。也就是说,随着第二分支电极移动到芯片内部并且随着电极之间的距离和电流散布长度Ls之间的一致程度越高,工作电压Vf降低并且发光强度Po可以提高。
另外,如图5所示,随着第二分支电极移动到芯片内部并且随着电极之间的距离和电流散布长度Ls之间的一致程度越高,位于分支电极之间的芯片的中心区域的强度增加以改善发光特性,使得工作电压Vf降低并且可以提高发光强度Po。在图5中,Y位置可以指示穿过两个分支电极的线上的位置,以便平行于发光器件芯片的短边。
再次参考图1,在该实施例中,第一分支电极134和第二分支电极144 可以彼此平行地设置。因此,在根据该实施例的发光器件中,分支电极之间的电流扩散效率提高,从而工作电压降低并且发光效率可以提高。
此外,在该实施例中,第一分支电极134的长度和第二分支电极144的长度可以形成为彼此相同或相似,并且可以被设置为在短边方向重合。因此,通过均匀地控制电流散布长度来提高电流扩散效率,并且具有提高发光效率和降低工作电压的技术效果。
本实施例可以提供一种发光器件,其能够通过考虑电流散布长度来设计电极之间的距离来提高发光器件的光学特性。
例如,根据本实施例,在设计发光器件芯片的电极时,特别是关于n型半导体层上的第一分支电极与p型半导体层上的第二分支电极之间的距离的设计,通过分析发光器件芯片并设计适于Ls的分支电极之间的距离来计算电流散布长度Ls可以降低工作电压Vf,并且存在技术效果:光输出Po处于同等水平或被增加。
图6是根据第二实施例的发光器件102的平面图,图7是根据第二实施例的发光器件102的局部截面图。
第二实施例可以采用第一实施例的技术特征,以下描述将集中在第二实施例的主要特征。
如图6和图7所示,根据第二实施例的发光器件102可以包括衬底105,衬底105上的第一导电半导体层112,第一导电半导体层112上的有源层114,有源层114上的第二导电半导体层116,第二导电半导体层116上的透光欧姆层120,透光欧姆层120上的绝缘层160,电连接到第一导电半导体层112 的第一分支电极134,连接到第一分支电极134并且通过穿过绝缘层160而电连接到第一导电半导体层112的多个穿透电极136,以及电连接到第一分支电极134的第一焊盘电极132。
根据第二实施例,由于第一分支电极134包括通过通孔(未示出)与第一导电半导体层112接触的穿透电极136,所以可以减少去除了有源层114 的区域以确保相对较宽的区域的有源层,由此提高发光效率。
另外,根据第二实施例,由于充分确保了与第一导电半导体层112接触的第一电极的穿透电极136的面积以防止工作电压的增加,从而最大化元件的可靠性和发光效率。
例如,由于电连接到第一导电半导体层112的任何一个穿透电极136的第一横向宽度W1大于两个相邻第一穿透电极136之间的第一距离D1,所以充分地确保与第一导电半导体层112电连接的穿透电极136的面积,以防止工作电压的升高,由此提高发光器件的可靠性。
在第二实施例中,电连接到第一导电半导体层112的穿透电极136的第一横向宽度W1可以是穿透电极136之间的第一距离D1的2.5倍或更多倍。
例如,任何一个穿透电极136的第一横向宽度W1可以是约50μm或更多,并且穿透电极136之间的第一距离D1可以是约20μm,但是不限于此。
例如,任何一个穿透电极136的第一横向宽度W1可以是约50至70μm,并且穿透电极136之间的第一距离D1可以是约15至25μm,但是不限于此。当任何一个穿透电极136的第一横向宽度W1小于50μm时,降低工作电压的效果可能较低,并且当第一横向宽度W1大于70μm时,有源层的去除面积增加,整个发光面积减小,并且因此光输出可能降低。当穿透电极136之间的第一距离D1小于15μm时,有源层的体积小并且发光区域可能较小,并且当第一距离D1大于25μm时,可能会发生工作电压的升高。
图8是根据第三实施例的发光器件103的局部截面图。
第三实施例可以采用第一实施例或第二实施例的技术特征,以下描述将集中在第三实施例的主要特征。
根据第三实施例,第一电极130可以包括与第一导电半导体层112接触的第一欧姆分支电极139和设置在穿透电极136上的第一反射分支电极137。
根据第三实施例,由于通过采用与第一导电半导体层112接触的第一欧姆分支电极139,穿透电极136与第一导电半导体层112之间的欧姆特性被最大化,所以可以通过降低工作电压提高电可靠性。
例如,第一欧姆分支电极139可以包括Cr、Ni、Ti、Rh、Pd、Ir、Ru、 Pt、Au和Hf中的至少一种或其组合,但不限于此。
另外,根据第三实施例,第一电极130在第一分支电极134的下侧包括第一反射分支电极137,使得第一分支电极134的光吸收最小化并且可以提高外部光提取效率。
第一反射分支电极137可以形成为包括Ag、Al、Ni、Ti、Rh、Pd、Ir、 Ru、Mg、Zn、Pt、Au和Hf中的至少一种或其组合,但是不限于此。
第一反射分支电极137可以由多个层形成,但不限于此。例如,在两层的情况下第一反射分支电极137可以由Al/Ni或Ag/Ni形成,或者在单层的情况下可以设置有分布式布拉格反射器(DBR),但不限于此。
图9是示出安装了根据实施例的发光器件的发光器件封装的视图。
根据实施例的发光器件封装200包括封装主体部分205,安装在封装主体部分205上的第三电极层213和第四电极层214,安装在封装主体部分205 上并电连接至第三电极层213和第四电极层214的发光器件100;以及具有磷光体232并围绕发光器件100的模制构件230。
第三电极层213和第四电极层214彼此电分离并且可以向发光器件100 供电。另外,第三电极层213和第四电极层214可以用于通过反射从发光器件100产生的光来提高光学效率,并且还可以用于将从发光器件100产生的热量排出到外部。
发光器件100可以通过导线、倒装芯片和管芯接合方法中的任何一种电连接到第三电极层213和/或第四电极层214。
以上实施例中描述的特征、结构和效果包括在至少一个实施例中,但不限于一个实施例。此外,本领域技术人员可以针对其他实施例组合或修改每个实施例中示出的特征、结构和效果。因此,可以认为与这种组合和这种变化有关的内容包含在本发明的范围内。
以上主要描述了实施例。然而,它们仅是示例,且不限制本发明。本领域的技术人员可以理解,在不脱离实施例的本质特征的情况下,可以做出以上没有提出的几种变型和应用。例如,在实施例中具体表示的每个组件可以变化。此外,应该认为,与这种变化和这种应用有关的差异包括在下面的权利要求书中限定的本发明的范围内。
【工业实用性】
根据实施例的发光器件可以应用于背光单元、照明单元、显示装置、指向装置、灯、路灯、用于车辆的发光器件、用于车辆的显示装置、智能手表等,但不限于此。
根据实施例的多个发光器件可以以封装的形式布置在衬底上。作为光学构件的导光板、棱镜片、扩散片、荧光片等可以设置在从实施例的发光器件封装发射的光的路径上。
Claims (16)
1.一种发光器件,包括:
第一导电半导体层;
有源层,在所述第一导电半导体层上;
第二导电半导体层,在所述有源层上;
透光欧姆层,在所述第二导电半导体层上;
第一电极,电连接到所述第一导电半导体层;
第二电极,在所述透光欧姆层上;以及
绝缘层,在所述透光欧姆层上,
其中所述第一电极包括第一焊盘电极和第一分支电极,并且所述第二电极包括第二焊盘电极和第二分支电极,以及
所述发光器件包括彼此面对的两个第一边和彼此面对的两个第二边,并且所述第一边的宽度大于所述第二边的宽度,并且所述第一边和所述第二边彼此正交,并且所述第一分支电极和所述第二分支电极之间的距离是任何一个所述第二边的宽度的1/6至1/2,
其中所述第一电极包括多个穿透电极,所述多个穿透电极连接至所述第一分支电极并且穿过所述绝缘层电连接至所述第一导电半导体层,以及
其中电连接到所述第一导电半导体层的所述穿透电极中的任何一个穿透电极的第一横向宽度大于两个相邻的第一穿透电极之间的第一距离。
2.根据权利要求1所述的发光器件,其中任何一个所述第二边的宽度为200至300μm,并且
所述第一分支电极与所述第二分支电极之间的距离为50至150μm。
3.根据权利要求2所述的发光器件,其中所述发光器件的上侧的面积为300000μm2或更小,并且
所述第一分支电极与所述第二分支电极之间的距离为90至110μm。
4.根据权利要求1所述的发光器件,
其中所述多个穿透电极包括彼此间隔开的第一穿透电极、第二穿透电极和第三穿透电极,
所述发光器件还包括在所述第一穿透电极、第二穿透电极与第三穿透电极之间的剩余有源层。
5.根据权利要求4所述的发光器件,其中电连接到所述第一导电半导体层的所述穿透电极中的任何一个穿透电极的所述第一横向宽度是两个相邻的第一穿透电极之间的所述第一距离的2.5倍。
6.根据权利要求4所述的发光器件,其中所述第一电极还包括与所述多个穿透电极下方的所述第一导电半导体层接触的第一欧姆分支电极。
7.根据权利要求6所述的发光器件,其中所述第一电极还包括设置在所述穿透电极上的第一反射分支电极。
8.根据权利要求7所述的发光器件,其中所述第一反射分支电极设置在所述第一分支电极的下侧。
9.根据权利要求1所述的发光器件,其中所述第二分支电极与所述发光器件的边缘之间的第二距离是所述第二边的宽度的1/6至1/4。
10.根据权利要求9所述的发光器件,其中所述发光器件的边缘是与所述第二分支电极平行的最近边缘。
11.根据权利要求1所述的发光器件,其中所述第二分支电极与所述发光器件的边缘之间的第二距离是所述第二边的宽度的1/6至1/5。
12.根据权利要求1所述的发光器件,其中所述发光器件的面积为300000μm2或更小,所述第二边的宽度为200至300μm。
13.根据权利要求12所述的发光器件,其中所述第一分支电极和所述第二分支电极之间的距离是所述第二边的宽度的3/10至11/30。
14.根据权利要求1所述的发光器件,其中所述透光欧姆层的厚度为40至60nm。
15.一种发光器件封装,包括:
根据权利要求1至14中任一项所述的发光器件。
16.一种发光器件,包括:
根据权利要求1所述的发光器件的封装。
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