KR100951581B1 - 유도결합 플라즈마 화학기상 증착장치, 이를 이용한도핑공정 없는 p형 산화아연박막 제조 시스템 및 그 방법,광출력 화합물 반도체 - Google Patents
유도결합 플라즈마 화학기상 증착장치, 이를 이용한도핑공정 없는 p형 산화아연박막 제조 시스템 및 그 방법,광출력 화합물 반도체 Download PDFInfo
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- KR100951581B1 KR100951581B1 KR1020070110937A KR20070110937A KR100951581B1 KR 100951581 B1 KR100951581 B1 KR 100951581B1 KR 1020070110937 A KR1020070110937 A KR 1020070110937A KR 20070110937 A KR20070110937 A KR 20070110937A KR 100951581 B1 KR100951581 B1 KR 100951581B1
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- 238000009616 inductively coupled plasma Methods 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 34
- 230000008569 process Effects 0.000 title description 15
- 239000004065 semiconductor Substances 0.000 title description 11
- 230000003287 optical effect Effects 0.000 title description 9
- 150000001875 compounds Chemical class 0.000 title description 7
- 239000000126 substance Substances 0.000 title description 4
- 239000007789 gas Substances 0.000 claims abstract description 83
- 239000010409 thin film Substances 0.000 claims abstract description 77
- 238000004519 manufacturing process Methods 0.000 claims abstract description 42
- 238000006243 chemical reaction Methods 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 37
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000001301 oxygen Substances 0.000 claims abstract description 36
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 36
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 29
- 238000000151 deposition Methods 0.000 claims abstract description 20
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000011068 loading method Methods 0.000 claims abstract description 11
- 230000008021 deposition Effects 0.000 claims description 16
- 238000000354 decomposition reaction Methods 0.000 claims description 15
- 230000004913 activation Effects 0.000 claims description 11
- 239000000523 sample Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000012159 carrier gas Substances 0.000 claims description 5
- 238000009833 condensation Methods 0.000 claims description 3
- 230000005494 condensation Effects 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 208
- 239000011787 zinc oxide Substances 0.000 abstract description 102
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 25
- 229910052751 metal Inorganic materials 0.000 abstract description 15
- 239000002184 metal Substances 0.000 abstract description 15
- 239000011701 zinc Substances 0.000 abstract description 15
- 230000003213 activating effect Effects 0.000 abstract description 3
- 238000005424 photoluminescence Methods 0.000 description 19
- 210000002381 plasma Anatomy 0.000 description 18
- 230000007547 defect Effects 0.000 description 8
- 229910021478 group 5 element Inorganic materials 0.000 description 8
- 230000001976 improved effect Effects 0.000 description 8
- 230000005693 optoelectronics Effects 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 206010021143 Hypoxia Diseases 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000008093 supporting effect Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000013212 metal-organic material Substances 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 206010048259 Zinc deficiency Diseases 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (17)
- 반응 공간을 제공하는 챔버와;상기 챔버의 내측에 설치되어, 챔버안으로 도입되는 산소 가스를 균일하게 분사시키는 제1 가스 분사기와;상기 챔버의 내측의 상기 제1 가스 분사기의 하측에 설치되어, 챔버안으로 도입되는 DEZ(diethylzinc, Zn(C2H5)2) 가스를 균일하게 분사시키는 제2 가스 분사기와;상기 챔버의 내측의 상기 제1 및 제2 가스 분사기 사이에 설치되어, 상기 제1 및 제2 가스 분사기로부터 각각 분사된 상기 산소 가스 및 DEZ 가스를 플라즈마 상태로 변화시키기 위한 RFI(radio frequency inductively coupled) 코일을 구비한 유도결합 플라즈마 발생장치와;상기 챔버 내부의 하측에 배치되어 상부면에 p형 ZnO 박막이 증착되는 기판을 로딩하여 지지하기 위한 기판 로딩장치를 포함하며,상기 제1 가스 분사기는 플라즈마 내의 전자 온도가 가장 높은 핫스팟 지점에 배치되도록 상기 RFI 코일의 상측에 위치시켜 산소의 분해 활성화를 최적화하는 것을 특징으로 하는 p형 ZnO 박막 제조 시스템.
- 제1항에 있어서, 운반 가스를 사용하여 상기 챔버 내부의 제2 가스 분사기로 DEZ 가스를 공급하는 버블러를 더 포함하는 것을 특징으로 하는 p형 ZnO 박막 제조 시스템.
- 삭제
- 제1항에 있어서, 상기 핫스팟 지점은 랑뮈어 프로브(Langmuir probe)를 이용하여 검출하는 것을 특징으로 하는 p형 ZnO 박막 제조 시스템.
- 삭제
- 제1항에 있어서, 상기 제1 및 제2 가스 분사기에 각각 연결되어 산소 가스와 DEZ 가스를 공급하는 제1 및 제2 가스라인과;상기 제1 및 제2 가스라인으로 공급되는 산소 가스와 DEZ 가스의 응축을 방지하기 위한 가열 수단을 더 포함하는 것을 특징으로 하는 p형 ZnO 박막 제조 시스템.
- 제1항에 있어서, 상기 RFI 코일에 인가되는 RF 파워는 50~300W로 설정되며, 챔버 내부의 증착온도는 200~300℃로 설정되는 것을 특징으로 하는 p형 ZnO 박막 제조 시스템.
- 반응 챔버 내에 기판을 로딩하는 단계와;상기 챔버의 내측에 설치되어 챔버안으로 도입되는 산소 가스를 균일하게 분사시키는 제1 가스 분사기와 상기 챔버의 내측의 상기 제1 가스 분사기의 하측에 설치되어 챔버안으로 도입되는 DEZ(diethylzinc, Zn(C2H5)2) 가스를 균일하게 분사시키는 제2 가스 분사기를 통하여 각각 산소 가스와 DEZ(diethylzinc, Zn(C2H5)2)가스를 상기 반응 챔버 내로 공급하는 단계와;상기 챔버의 내측의 상기 제1 및 제2 가스 분사기 사이에 설치되어, 상기 제1 및 제2 가스 분사기로부터 각각 분사된 상기 산소 가스 및 DEZ 가스를 플라즈마 상태로 변화시키기 위한 RFI(radio frequency inductively coupled) 코일을 구비한 유도결합 플라즈마(ICP) 발생장치를 이용하여 상기 챔버 내로 분사된 상기 산소 가스와 DEZ 가스를 플라즈마 상태로 변화시켜 상기 기판 위에 p형 ZnO 박막을 증착시키는 단계를 포함하며,상기 제1 가스 분사기에서 분사되는 산소 가스는 플라즈마 내의 전자 온도가 가장 높은 핫스팟 지점으로 공급되어 산소의 분해 활성화를 최적화하는 것을 특징으로 하는 유도결합 플라즈마(ICP)를 이용한 p형 ZnO 박막 제조방법.
- 삭제
- 삭제
- 제8항에 있어서, 상기 유도결합 플라즈마 발생장치에 구비된 RFI(radio frequency inductively coupled) 코일에 인가되는 RF 파워는 50~300W로 설정되며, 챔버 내부의 증착온도는 200~300℃로 설정되는 것을 특징으로 하는 ICP를 이용한 p형 ZnO 박막 제조방법.
- 제8항에 있어서, 상기 산소 유량의 조절에 따라 p형 ZnO 박막이 형성되며, 산소 가스의 공급 유량은 2~50sccm 범위로 설정되는 것을 특징으로 하는 ICP를 이용한 p형 ZnO 박막 제조방법.
- 제8항에 있어서, 상기 기판은 Si 기판인 것을 특징으로 하는 ICP를 이용한 p형 ZnO 박막 제조방법.
- 삭제
- 삭제
- 삭제
- 삭제
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KR1020070110937A KR100951581B1 (ko) | 2007-11-01 | 2007-11-01 | 유도결합 플라즈마 화학기상 증착장치, 이를 이용한도핑공정 없는 p형 산화아연박막 제조 시스템 및 그 방법,광출력 화합물 반도체 |
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KR20070053617A (ko) * | 2005-11-21 | 2007-05-25 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | 저온에서 산화아연을 증착하는 방법 및 이 방법에 의해형성된 생성물 |
KR20070080627A (ko) * | 2006-02-08 | 2007-08-13 | 전남대학교산학협력단 | 유도결합 플라즈마법 및 유기금속 화학기상증착법을 이용한박막 제조방법 |
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KR20070053617A (ko) * | 2005-11-21 | 2007-05-25 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | 저온에서 산화아연을 증착하는 방법 및 이 방법에 의해형성된 생성물 |
KR20070080627A (ko) * | 2006-02-08 | 2007-08-13 | 전남대학교산학협력단 | 유도결합 플라즈마법 및 유기금속 화학기상증착법을 이용한박막 제조방법 |
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Solid State Communications 133(2005) pp.245-248.* |
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