KR100888539B1 - 피처리체의 산화 방법 및 산화 장치 - Google Patents
피처리체의 산화 방법 및 산화 장치 Download PDFInfo
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- KR100888539B1 KR100888539B1 KR1020050012519A KR20050012519A KR100888539B1 KR 100888539 B1 KR100888539 B1 KR 100888539B1 KR 1020050012519 A KR1020050012519 A KR 1020050012519A KR 20050012519 A KR20050012519 A KR 20050012519A KR 100888539 B1 KR100888539 B1 KR 100888539B1
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- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 60
- 239000007789 gas Substances 0.000 claims abstract description 303
- 230000001603 reducing effect Effects 0.000 claims abstract description 102
- 238000012545 processing Methods 0.000 claims abstract description 91
- 238000002347 injection Methods 0.000 claims abstract description 73
- 239000007924 injection Substances 0.000 claims abstract description 73
- 230000003647 oxidation Effects 0.000 claims abstract description 64
- 230000001590 oxidative effect Effects 0.000 claims abstract description 37
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 239000001301 oxygen Substances 0.000 claims abstract description 12
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 9
- 238000011282 treatment Methods 0.000 claims description 32
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims description 4
- 229910052805 deuterium Inorganic materials 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims 1
- 230000004308 accommodation Effects 0.000 abstract description 7
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 146
- 239000000047 product Substances 0.000 description 38
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- 238000011144 upstream manufacturing Methods 0.000 description 14
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
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- 230000000694 effects Effects 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000009279 wet oxidation reaction Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 4
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
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- LXRZVMYMQHNYJB-UNXOBOICSA-N [(1R,2S,4R)-4-[[5-[4-[(1R)-7-chloro-1,2,3,4-tetrahydroisoquinolin-1-yl]-5-methylthiophene-2-carbonyl]pyrimidin-4-yl]amino]-2-hydroxycyclopentyl]methyl sulfamate Chemical compound CC1=C(C=C(S1)C(=O)C1=C(N[C@H]2C[C@H](O)[C@@H](COS(N)(=O)=O)C2)N=CN=C1)[C@@H]1NCCC2=C1C=C(Cl)C=C2 LXRZVMYMQHNYJB-UNXOBOICSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
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- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (13)
- 소정의 길이를 갖는 진공화 가능하게 이루어진 처리 용기 내에 피처리체를 복수매 수용하고, 상기 처리 용기 내에 산화성 가스와 환원성 가스를 공급하여 상기 양 가스를 반응시킴으로써 발생한 산소 활성종과 수산기 활성종을 갖는 분위기 중에서 상기 피처리체의 표면을 산화하도록 한 피처리체의 산화 방법에 있어서,상기 산화성 가스를 상기 처리 용기의 길이 방향의 일단부측으로부터 공급하고, 상기 환원성 가스를 상기 처리 용기의 길이 방향의 다른 위치에 설치한 복수의 가스 분사구로부터 공급할 수 있게 하는 동시에, 상기 처리 용기 내의 상기 피처리체의 수용 매수와 수용 위치에 따라서 상기 가스 분사구 중 어느 하나를 선택하고, 상기 선택된 가스 분사구로부터 환원성 가스를 공급하도록 한 것을 특징으로 하는 피처리체의 산화 방법.
- 제1항에 있어서, 상기 선택되는 가스 분사구는 상기 가스 분사구로부터 개별로 환원성 가스를 흐르게 하여 산화 처리를 행하였을 때에 형성되는 산화막의 막 두께를 기초로 하여 상기 막 두께의 면간 균일성이 높아지도록 미리 요구된 가스 분사구인 것을 특징으로 하는 피처리체의 산화 방법.
- 삭제
- 제1항 또는 제2항에 있어서, 상기 양 가스에 대한 상기 환원성 가스의 농도는 5 % 내지 40 %의 범위 내인 것을 특징으로 하는 피처리체의 산화 방법.
- 제1항 또는 제2항에 있어서, 상기 산화성 가스는 O2와 N2O와 NO와 NO2와 O3로 이루어지는 군으로부터 선택되는 1개 이상의 가스를 포함하고, 상기 환원성 가스는 H2와 NH3와 CH4와 HCl과 중수소로 이루어지는 군으로부터 선택되는 1개 이상의 가스를 포함하는 것을 특징으로 하는 피처리체의 산화 방법.
- 제1항 또는 제2항에 있어서, 상기 피처리체는 제품용 웨이퍼 및 모니터용 웨이퍼로 구성되어 있는 것을 특징으로 하는 피처리체의 산화 방법.
- 제1항 또는 제2항에 있어서, 상기 피처리체는 제품용 웨이퍼만으로 구성되어 있는 것을 특징으로 하는 피처리체의 산화 방법.
- 피처리체를 소정의 피치로 복수매 지지하는 보유 지지 수단과,상기 보유 지지 수단을 수용할 수 있게 소정의 길이를 갖는 동시에 진공화 가능하게 이루어진 처리 용기와,상기 피처리체를 가열하기 위한 가열 수단과,상기 처리 용기 내의 일단부측으로 산화성 가스를 공급하는 산화성 가스 공급 수단과,상기 처리 용기 내의 길이 방향의 다른 위치에 환원성 가스를 공급하는 복수개의 환원성 가스 노즐을 갖는 환원성 가스 공급 수단과,상기 처리 용기 내의 상기 피처리체의 수용 매수와 수용 위치를 기초로 하여, 상기 환원성 가스 노즐 중 어느 하나를 선택하고, 상기 선택된 환원성 가스 노즐로부터 환원성 가스를 공급하도록 제어하는 주 제어부를 구비한 것을 특징으로 하는 산화 장치.
- 제8항에 있어서, 상기 선택되는 환원성 가스 노즐은 상기 환원성 가스로부터 개별로 환원성 가스를 흐르게 하여 산화 처리를 행하였을 때에 형성되는 막 두께를 기초로 하여 상기 막 두께의 면간 균일성이 높아지도록 미리 요구된 환원성 가스 노즐인 것을 특징으로 하는 산화 장치.
- 제8항 또는 제9항에 있어서, 상기 보유 지지 수단에 수용되는 상기 피처리체의 수용 매수가 상기 보유 지지 수단의 최대 수용 능력 매수보다도 적은 경우에는, 상기 적은 매수에 상당하는 영역은 비어 있는 영역으로 되어 있는 것을 특징으로 하는 산화 장치.
- 제8항 또는 제9항에 있어서, 상기 산화성 가스는 O2와 N2O와 NO와 NO2와 O3로 이루어지는 군으로부터 선택되는 1개 이상의 가스를 포함하고, 상기 환원성 가스는 H2와 NH3와 CH4와 HCl과 중수소로 이루어지는 군으로부터 선택되는 1개 이상의 가스를 포함하는 것을 특징으로 하는 산화 장치.
- 제8항 또는 제9항에 있어서, 상기 피처리체는 제품용 웨이퍼 및 모니터용 웨이퍼로 구성되어 있는 것을 특징으로 하는 산화 장치.
- 제8항 또는 제9항에 있어서, 상기 피처리체는 제품용 웨이퍼만으로 구성되어 있는 것을 특징으로 하는 산화 장치.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004040637 | 2004-02-17 | ||
JPJP-P-2004-00040637 | 2004-02-17 | ||
JP2005009631A JP4586544B2 (ja) | 2004-02-17 | 2005-01-17 | 被処理体の酸化方法、酸化装置及び記憶媒体 |
JPJP-P-2005-00009631 | 2005-01-17 |
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KR20060041970A KR20060041970A (ko) | 2006-05-12 |
KR100888539B1 true KR100888539B1 (ko) | 2009-03-11 |
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KR1020050012519A KR100888539B1 (ko) | 2004-02-17 | 2005-02-16 | 피처리체의 산화 방법 및 산화 장치 |
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US (2) | US7419550B2 (ko) |
JP (1) | JP4586544B2 (ko) |
KR (1) | KR100888539B1 (ko) |
TW (1) | TW200539350A (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20190048278A (ko) * | 2017-10-31 | 2019-05-09 | 에스케이실트론 주식회사 | 실리콘 웨이퍼의 산화물층의 두께 예측 방법 |
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US8409352B2 (en) * | 2010-03-01 | 2013-04-02 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus |
KR101427726B1 (ko) * | 2011-12-27 | 2014-08-07 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 반도체 장치의 제조 방법 |
CN104520975B (zh) * | 2012-07-30 | 2018-07-31 | 株式会社日立国际电气 | 衬底处理装置及半导体器件的制造方法 |
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KR20230053680A (ko) * | 2020-09-25 | 2023-04-21 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 반도체 장치의 제조 방법, 기판 처리 방법 및 프로그램 |
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US7419550B2 (en) | 2008-09-02 |
JP4586544B2 (ja) | 2010-11-24 |
US20060183343A1 (en) | 2006-08-17 |
KR20060041970A (ko) | 2006-05-12 |
US7674724B2 (en) | 2010-03-09 |
TW200539350A (en) | 2005-12-01 |
TWI379357B (ko) | 2012-12-11 |
US20080268654A1 (en) | 2008-10-30 |
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