KR100856531B1 - 반도체 제조방법 및 반도체 제조장치 - Google Patents
반도체 제조방법 및 반도체 제조장치 Download PDFInfo
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- KR100856531B1 KR100856531B1 KR1020060044607A KR20060044607A KR100856531B1 KR 100856531 B1 KR100856531 B1 KR 100856531B1 KR 1020060044607 A KR1020060044607 A KR 1020060044607A KR 20060044607 A KR20060044607 A KR 20060044607A KR 100856531 B1 KR100856531 B1 KR 100856531B1
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- Prior art keywords
- film
- insulating film
- gas
- plasma
- silicon
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- 238000000034 method Methods 0.000 title claims abstract description 112
- 239000004065 semiconductor Substances 0.000 title abstract description 52
- 238000004519 manufacturing process Methods 0.000 title abstract description 49
- 239000007789 gas Substances 0.000 claims abstract description 222
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 97
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 92
- 239000010703 silicon Substances 0.000 claims abstract description 91
- 239000000758 substrate Substances 0.000 claims abstract description 58
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 47
- 238000012545 processing Methods 0.000 claims abstract description 45
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 29
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000001301 oxygen Substances 0.000 claims abstract description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 27
- 230000015572 biosynthetic process Effects 0.000 claims description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 27
- 238000005121 nitriding Methods 0.000 claims description 25
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 25
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 238000011282 treatment Methods 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052754 neon Inorganic materials 0.000 claims description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 2
- 229910004541 SiN Inorganic materials 0.000 claims 1
- -1 clipton Chemical compound 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000003908 quality control method Methods 0.000 abstract description 7
- 230000001678 irradiating effect Effects 0.000 abstract description 4
- 229910002651 NO3 Inorganic materials 0.000 abstract description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 356
- 210000002381 plasma Anatomy 0.000 description 90
- 230000008569 process Effects 0.000 description 58
- 230000007547 defect Effects 0.000 description 17
- 238000012546 transfer Methods 0.000 description 10
- 239000012528 membrane Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
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Abstract
Description
Claims (25)
- 처리가스 분위기하에서, 규소를 주성분으로 하는 피처리기체에 마이크로파를 조사하는 것에 의해 산소 또는 질소, 또는 산소와 질소를 포함하는 처리가스의 플라스마를 형성하고, 이 플라스마를 이용하여 상기 피처리기체 표면에 직접적으로 산화, 질화, 또는 산질화를 실시하여 제1의 절연막을 형성하는 것을 특징으로 하는 절연막의 형성방법.
- 청구항 1에 있어서,상기 처리가스가 O2, H20, 오존, N2 , N2O, NO 및 NH3 중 적어도 어느 하나를 포함하는 것을 특징으로 하는 절연막 형성방법.
- 청구항 1에 있어서,상기 제 1 절연막 상에 또 제 2 절연막을 형성하는 것을 특징으로 하는 절연막 형성방법.
- 청구항 3에 있어서,상기 제 2 절연막은 질화규소인 것을 특징으로 하는 절연막의 형성방법.
- 청구항 3 또는 청구항 4에 있어서,상기 제 2 절연막의 형성은 CVD법에 의해 행해지는 것을 특징으로 하는 절연막 형성방법.
- 청구항 3 에 있어서,상기 제 2 절연막을 형성하는 공정이 플라스마조사에 의해 행해지는 것을 특징으로 하는 절연막 형성방법.
- 청구항 4에 있어서,상기 질화규소는 N2, 또는 NH3와 모노실란, 또는 디크롤실란, 또는 트리크롤실란을 포함하는 가스를 플라스마화하여 형성되는 것을 특징으로 하는 절연막 형성방법.
- 희가스와 질소를 포함한 가스를 포함하고, 실리콘을 포함하지 않는 가스를 플라스마화하고, 상기 플라스마에 의해 기판의 표면을 질화하여 제1의 실리콘 질화막을 형성하는 절연막의 형성 방법으로서,상기 희가스의 함유량이 50%이상 99% 이하인 것을 특징으로 절연막의 형성 방법.
- 청구항 8에 있어서,희가스와 질소와 실리콘을 포함하는 가스를 플라스마화하고, 상기 희가스, 상기 질소 및 실리콘을 포함하는 플라스마에 의해 상기 제1의 실리콘 질화막의 표면에, 제1의 실리콘 질화막보다 성막 속도가 큰 제2의 실리콘 질화막을 형성하는 것을 특징으로 하는 절연막의 형성방법.
- 희가스와 산소를 포함하고, 실리콘을 포함하지 않는 가스를 플라스마화하고, 상기 희가스 및 상기 산소를 포함하는 플라스마에 의해 기판의 표면을 산화하여 실리콘 산화막을 형성하는 절연막의 형성 방법으로서,상기 희가스의 함유량이 50% 이상 99% 이하인 것을 특징으로 하는 절연막의 형성방법.
- 희가스와 산소와 질소를 포함하고, 실리콘을 포함하지 않는 가스를 플라스마화하고, 상기 희가스, 상기 산소 및 상기 질소를 포함하는 플라스마에 의해 기판의 표면을 산질화하여 실리콘 산질화막을 형성하는 절연막의 형성 방법으로서,상기 희가스의 함유량이 50% 이상 99% 이하인 것을 특징으로 하는 절연막의 형성방법.
- 청구항 8 또는 청구항 11에 있어서,희가스와 질소와 실리콘을 포함하고, 상기 희가스의 함유량이 50% 이상 99%이하의 가스를 플라즈마화하고, 상기 희가스, 상기 질소 및 상기 실리콘을 포함하는 플라즈마에 의해 상기 제1의 실리콘 질화막 또는 상기 실리콘 산질화막의 표면에 CVD 질화막을 형성하는 것을 특징으로 하는 절연막의 형성방법.
- 규소를 주성분으로 하는 기판상에 절연막을 형성하는 절연막의 형성 방법으로서,기판의 표면에 제1의 절연막을 형성하는 공정과희가스와 질소와 실리콘을 포함하고, 희가스의 함유량이 50% 이상 99%이하의 가스를 플라스마화하고, 상기 희가스, 상기 질소 및 상기 실리콘을 포함하는 플라스마에 의해 상기 제1의 절연막의 표면에 실리콘 질화막으로 이루어지는 제2의 절연막을 형성하는 공정을 포함하는 것을 특징으로 하는 절연막의 형성 방법.
- 청구항 8, 청구항 10, 청구항 11 또는 청구항 13 중 어느 한 항에 있어서,상기 플라즈마는 수소를 포함하고,상기 플라스마는 복수의 슬롯을 가지는 평면 안테나를 개재하여 생성되는 것을 특징으로 하는 절연막의 형성방법.
- 청구항 1, 청구항 3, 청구항 8, 청구항 10, 청구항 11 또는 청구항 13 중 어느 한 항에 있어서,상기 절연막, 또는 상기 제1의 절연막 및 상기 제2의 절연막은 게이트 절연막인 것을 특징으로 하는 절연막의 형성방법.
- 청구항 1에 있어서,상기 절연막은 SiO2, SiN 또는 SiON막인 것을 특징으로 하는 절연막의 형성방법.
- 청구항 1, 청구항 8, 청구항 10, 청구항 11 또는 청구항 13 중 어느 한 항에 있어서,상기 절연막, 또는 상기 제1의 절연막 및 상기 제2의 절연막은 산화막 상당 환산 막두께가 1nm 이하인 것을 특징으로 하는 절연막의 형성방법.
- 청구항 1, 청구항 8, 청구항 10, 청구항 11 또는 청구항 13 중 어느 한 항에 있어서,상기 플라즈마가 복수의 슬릿을 가지는 평면안테나 부재를 개재하여 생성되는 것을 특징으로 하는 절연막의 형성방법.
- 청구항 1, 청구항 8, 청구항 10, 청구항 11 또는 청구항 13 중 어느 한 항에 있어서,상기 희가스는 아르곤, 클립톤, 헬륨, 네온에서 선택되는 것을 특징으로 하는 절연막의 형성방법.
- 청구항 1, 청구항 8, 청구항 10, 청구항 11 또는 청구항 13 중 어느 한 항에 있어서,상기 플라스마는 300 MHz 이상 2500 MHz 이하의 고주파 전력을 이용해 생성되는 것을 특징으로 하는 절연막의 형성방법.
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JP09783199A JP4255563B2 (ja) | 1999-04-05 | 1999-04-05 | 半導体製造方法及び半導体製造装置 |
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KR20000076774A (ko) | 2000-12-26 |
US20020111000A1 (en) | 2002-08-15 |
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US6399520B1 (en) | 2002-06-04 |
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