KR100796067B1 - 반도체 제조용 건식 에칭 개스 및 그의 제조방법 - Google Patents
반도체 제조용 건식 에칭 개스 및 그의 제조방법 Download PDFInfo
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- KR100796067B1 KR100796067B1 KR1020060041370A KR20060041370A KR100796067B1 KR 100796067 B1 KR100796067 B1 KR 100796067B1 KR 1020060041370 A KR1020060041370 A KR 1020060041370A KR 20060041370 A KR20060041370 A KR 20060041370A KR 100796067 B1 KR100796067 B1 KR 100796067B1
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- Prior art keywords
- octafluorocyclopentene
- ppm
- gas
- less
- distillation column
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 238000001312 dry etching Methods 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title description 3
- 238000004821 distillation Methods 0.000 claims abstract description 72
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910001868 water Inorganic materials 0.000 claims abstract description 56
- 238000009835 boiling Methods 0.000 claims abstract description 53
- 239000007789 gas Substances 0.000 claims abstract description 53
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 claims abstract description 42
- 238000006243 chemical reaction Methods 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- YBMDPYAEZDJWNY-UHFFFAOYSA-N 1,2,3,3,4,4,5,5-octafluorocyclopentene Chemical compound FC1=C(F)C(F)(F)C(F)(F)C1(F)F YBMDPYAEZDJWNY-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000010924 continuous production Methods 0.000 claims abstract description 25
- DMZRCHJVWAKCAX-UHFFFAOYSA-N 1,2,3,3,4,4,5,5-octachlorocyclopentene Chemical compound ClC1=C(Cl)C(Cl)(Cl)C(Cl)(Cl)C1(Cl)Cl DMZRCHJVWAKCAX-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 9
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 9
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 8
- 239000005416 organic matter Substances 0.000 claims abstract description 5
- 238000000926 separation method Methods 0.000 claims abstract description 5
- 238000004508 fractional distillation Methods 0.000 claims abstract description 3
- 238000005530 etching Methods 0.000 abstract description 16
- 239000002994 raw material Substances 0.000 abstract description 15
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 56
- 239000011698 potassium fluoride Substances 0.000 description 45
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 42
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 28
- 238000004458 analytical method Methods 0.000 description 25
- 239000000460 chlorine Substances 0.000 description 25
- 238000010992 reflux Methods 0.000 description 24
- 235000003270 potassium fluoride Nutrition 0.000 description 21
- 229910052757 nitrogen Inorganic materials 0.000 description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 19
- 239000001301 oxygen Substances 0.000 description 19
- 229910052760 oxygen Inorganic materials 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 17
- 238000003682 fluorination reaction Methods 0.000 description 13
- 235000011164 potassium chloride Nutrition 0.000 description 13
- 239000001103 potassium chloride Substances 0.000 description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 11
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 239000003337 fertilizer Substances 0.000 description 9
- 238000000746 purification Methods 0.000 description 9
- 239000000047 product Substances 0.000 description 8
- 239000003054 catalyst Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 238000012856 packing Methods 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- WZHMZSRXKCYGKK-UHFFFAOYSA-N 1-chloro-2-fluorocyclopentene Chemical class FC1=C(Cl)CCC1 WZHMZSRXKCYGKK-UHFFFAOYSA-N 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 5
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 239000007858 starting material Substances 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-ZSJDYOACSA-N Heavy water Chemical compound [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 4
- 125000001309 chloro group Chemical group Cl* 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000010348 incorporation Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000003463 adsorbent Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 235000013399 edible fruits Nutrition 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 150000001923 cyclic compounds Chemical group 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical class FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- VUNCWTMEJYMOOR-UHFFFAOYSA-N hexachlorocyclopentadiene Chemical compound ClC1=C(Cl)C(Cl)(Cl)C(Cl)=C1Cl VUNCWTMEJYMOOR-UHFFFAOYSA-N 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 238000010223 real-time analysis Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- -1 silicon oxide compound Chemical class 0.000 description 2
- 239000002351 wastewater Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- JMTPGSMYAMXWBK-UHFFFAOYSA-N 1,2,3-trichloro-3,4,4,5,5-pentafluorocyclopentene Chemical compound FC1(F)C(Cl)=C(Cl)C(F)(Cl)C1(F)F JMTPGSMYAMXWBK-UHFFFAOYSA-N 0.000 description 1
- USGRAFRYJSLAEQ-UHFFFAOYSA-N 1,2-dichloro-1,3,3,4,4,5-hexafluoropent-1-ene Chemical compound FCC(F)(F)C(F)(F)C(Cl)=C(F)Cl USGRAFRYJSLAEQ-UHFFFAOYSA-N 0.000 description 1
- ABPBVCKGWWGZDP-UHFFFAOYSA-N 1,2-dichloro-3,3,4,4,5,5-hexafluorocyclopentene Chemical compound FC1(F)C(Cl)=C(Cl)C(F)(F)C1(F)F ABPBVCKGWWGZDP-UHFFFAOYSA-N 0.000 description 1
- XUMFLKOMBYRBCK-UHFFFAOYSA-N 1-chloro-2,3,3,4,4,5,5-heptafluorocyclopentene Chemical compound FC1=C(Cl)C(F)(F)C(F)(F)C1(F)F XUMFLKOMBYRBCK-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-BJUDXGSMSA-N Nitrogen-13 Chemical compound [13N] QJGQUHMNIGDVPM-BJUDXGSMSA-N 0.000 description 1
- 241000985694 Polypodiopsida Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000007806 chemical reaction intermediate Substances 0.000 description 1
- 239000007810 chemical reaction solvent Substances 0.000 description 1
- 238000010960 commercial process Methods 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012025 fluorinating agent Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000543 intermediate Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- POHFBTRVASILTB-UHFFFAOYSA-M potassium;fluoride;dihydrofluoride Chemical compound F.F.[F-].[K+] POHFBTRVASILTB-UHFFFAOYSA-M 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910021654 trace metal Inorganic materials 0.000 description 1
- 238000004454 trace mineral analysis Methods 0.000 description 1
- 238000004457 water analysis Methods 0.000 description 1
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C17/00—Preparation of halogenated hydrocarbons
- C07C17/093—Preparation of halogenated hydrocarbons by replacement by halogens
- C07C17/20—Preparation of halogenated hydrocarbons by replacement by halogens of halogen atoms by other halogen atoms
- C07C17/202—Preparation of halogenated hydrocarbons by replacement by halogens of halogen atoms by other halogen atoms two or more compounds being involved in the reaction
- C07C17/208—Preparation of halogenated hydrocarbons by replacement by halogens of halogen atoms by other halogen atoms two or more compounds being involved in the reaction the other compound being MX
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- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C17/00—Preparation of halogenated hydrocarbons
- C07C17/38—Separation; Purification; Stabilisation; Use of additives
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C17/00—Preparation of halogenated hydrocarbons
- C07C17/38—Separation; Purification; Stabilisation; Use of additives
- C07C17/383—Separation; Purification; Stabilisation; Use of additives by distillation
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C23/00—Compounds containing at least one halogen atom bound to a ring other than a six-membered aromatic ring
- C07C23/02—Monocyclic halogenated hydrocarbons
- C07C23/08—Monocyclic halogenated hydrocarbons with a five-membered ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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Abstract
Description
샘플 수취 | 금속(중량ppb) | 수분(중량ppm) | ||||||||
Al | Ca | Cu | Fe | Mg | Mn | Ni | Na | Zn | ||
저비물 증류탑 하부 (열교환기 하부) | 16 | 13 | 8 | 22 | 10 | 11 | 19 | 7 | 6 | 6 |
고비물 증류탑 하부 (열교환기 하부) | 6 | 6 | 4 | 13 | 3 | 3 | 10 | 3 | 2 | 3 |
고비물 증류탑 상부 (열교환기 상부) | <1 | <1 | 1 | <1 | <1 | <1 | 1.5 | <1 | <1 | 1 |
Claims (3)
- 옥타클로로사이클로펜텐을 KF와 반응시켜 옥타플루오로사이클로펜텐을 제조하는 방법에 있어서,1. 옥타클로로사이클로펜텐과 KF를 반응시키는 반응기에 내부에 KF를 채운 필터 2개를 병렬로 연결하고, 필터와 반응기 사이의 밸브를 교차로 개폐시켜 상기 필터내의 KF가 옥타클로로사이클로펜텐과 교차접촉반응하도록 하여 옥타클로로사이클로펜텐과 KF와의 반응을 연속반응으로 유지시켜서 연속공정으로 옥타플루오로사이클로펜텐함량 50~80용량%인 조 옥타플루오로사이클로펜텐을 얻는공정(제1공정)과2. 상기 공정에서 얻어진 조 옥타플루오로사이클로펜텐을 저비물 증류탑에서 조 옥타플루오로사이클로펜텐중의 옥타플루오로사이클로펜텐보다 비점이 낮은 저비점 유기물을 분별증류방법으로 제거하고, 여기에서 얻어진 반응물을 고비물증류탑에서 분별증류하여 옥타플루오로사이클로펜텐을 개스상으로 회수하여, 금속성분과 옥타플루오로사이클로펜텐보다 비점이 높은 고비물을 분리하여 고순도 옥타플루오로사이클로펜텐을 얻는과정(제2공정)을 연속공정으로 구성시켜서 C5F8이 99.995용량%이상이고, 질소개스가 50용량ppm 이하이고 산소개스가 5용량ppm 이하이고 수분이 5중량 ppm 이하이고금속성분이 5중량ppb이하인 반도체 제조용 건식에칭개스를 연속공정으로 제조하는 방법.
- 삭제
- 반도체 제조용 건식 에칭개스에 있어서,C5F8이 99.995용량%이상이고, 질소개스가 50용량ppm 이하이고 산소개스가 5용량ppm 이하이고 수분이 5중량 ppm 이하이고 금속성분이 5중량ppb 이하인 반도체 제조용 건식에칭개스.
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TW095134563A TWI310762B (en) | 2006-05-09 | 2006-09-19 | Dry-etching gas for semiconductor process and preparation method thereof |
US11/535,035 US7319174B2 (en) | 2006-05-09 | 2006-09-25 | Dry-etching gas for semiconductor process and preparation method thereof |
DE102006049156A DE102006049156B4 (de) | 2006-05-09 | 2006-10-18 | Herstellungsverfahren für ein Trockenätzgas für Halbleiterverfahren |
DE102006062932A DE102006062932B3 (de) | 2006-05-09 | 2006-10-18 | Trockenätzgas für Halbleiterverfahren |
JP2007124396A JP2007302663A (ja) | 2006-05-09 | 2007-05-09 | 半導体製造用ドライエッチングガスおよびその製造方法 |
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KR20170121233A (ko) * | 2015-04-06 | 2017-11-01 | 샌트랄 글래스 컴퍼니 리미티드 | 드라이 에칭 가스 및 드라이 에칭 방법 |
CN108276243A (zh) * | 2017-12-20 | 2018-07-13 | 大连九信精细化工有限公司 | 一种八氟环戊烯的工业化生产方法 |
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US20080191163A1 (en) * | 2007-02-09 | 2008-08-14 | Mocella Michael T | Laser-Assisted Etching Using Gas Compositions Comprising Unsaturated Fluorocarbons |
JP6788177B2 (ja) * | 2015-05-14 | 2020-11-25 | セントラル硝子株式会社 | ドライエッチング方法、ドライエッチング剤及び半導体装置の製造方法 |
JP6822763B2 (ja) * | 2015-11-16 | 2021-01-27 | セントラル硝子株式会社 | ドライエッチング方法 |
JP7055194B2 (ja) * | 2018-03-22 | 2022-04-15 | 富士フイルム株式会社 | ろ過装置、精製装置、薬液の製造方法 |
KR102405561B1 (ko) * | 2018-03-22 | 2022-06-08 | 후지필름 가부시키가이샤 | 여과 장치, 정제 장치, 및 약액의 제조 방법 |
CN111712318A (zh) * | 2018-03-22 | 2020-09-25 | 富士胶片株式会社 | 过滤装置、纯化装置、药液的制造方法 |
JPWO2022080274A1 (ko) * | 2020-10-15 | 2022-04-21 | ||
GB2614742A (en) * | 2022-01-18 | 2023-07-19 | Acromore Ip Ltd | Pesticidal composition |
WO2023157441A1 (ja) * | 2022-02-16 | 2023-08-24 | 株式会社レゾナック | エッチング方法 |
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JP2000332001A (ja) | 1999-05-24 | 2000-11-30 | Nippon Zeon Co Ltd | プラズマ反応用ガス及びその製造方法 |
JP2000349071A (ja) | 1999-06-03 | 2000-12-15 | Shibaura Mechatronics Corp | ケミカルドライエッチング方法 |
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JP2000332001A (ja) | 1999-05-24 | 2000-11-30 | Nippon Zeon Co Ltd | プラズマ反応用ガス及びその製造方法 |
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KR20170121233A (ko) * | 2015-04-06 | 2017-11-01 | 샌트랄 글래스 컴퍼니 리미티드 | 드라이 에칭 가스 및 드라이 에칭 방법 |
KR101969517B1 (ko) * | 2015-04-06 | 2019-04-16 | 샌트랄 글래스 컴퍼니 리미티드 | 드라이 에칭 가스 및 드라이 에칭 방법 |
CN108276243A (zh) * | 2017-12-20 | 2018-07-13 | 大连九信精细化工有限公司 | 一种八氟环戊烯的工业化生产方法 |
CN108276243B (zh) * | 2017-12-20 | 2020-08-11 | 大连九信精细化工有限公司 | 一种八氟环戊烯的工业化生产方法 |
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US20070265478A1 (en) | 2007-11-15 |
DE102006062932B3 (de) | 2013-01-03 |
US7319174B2 (en) | 2008-01-15 |
US20080203353A1 (en) | 2008-08-28 |
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