KR100787678B1 - 플립칩 내장형 리드프레임 패키지 및 그 처리과정 - Google Patents
플립칩 내장형 리드프레임 패키지 및 그 처리과정 Download PDFInfo
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- KR100787678B1 KR100787678B1 KR1020027011616A KR20027011616A KR100787678B1 KR 100787678 B1 KR100787678 B1 KR 100787678B1 KR 1020027011616 A KR1020027011616 A KR 1020027011616A KR 20027011616 A KR20027011616 A KR 20027011616A KR 100787678 B1 KR100787678 B1 KR 100787678B1
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- leadframe
- die
- bump
- bumps
- package
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 230000013011 mating Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 239000000945 filler Substances 0.000 claims description 4
- 239000004840 adhesive resin Substances 0.000 claims description 2
- 229920006223 adhesive resin Polymers 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 claims description 2
- 238000007731 hot pressing Methods 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 7
- 239000004033 plastic Substances 0.000 description 6
- 229920003023 plastic Polymers 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 241001133184 Colletotrichum agaves Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 150000001875 compounds Chemical group 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000002991 molded plastic Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/4951—Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
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- H01L2224/1147—Manufacturing methods using a lift-off mask
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
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- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
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- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
Claims (19)
- 다이(die)를 리드프레임(leadframe)에 연결하기 위한 방법으로서,- 다이 위에 금속 범프(metal bump)를 형성하고,- 상기 범프들을 리드프레임 위 결합 핑거와 접촉시키며,- 범프들을 가열하고, 그리고- 결합 핑거에 대해 범프를 압착시키는,이상의 단계를 포함하는 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 금속 범프를 형성하는 단계가 스터드 범핑(stud bumping)을 포함하는 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 금속 범프를 형성하는 단계가 전기도금(electroplating)을 포함하는 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 금속 범프가 금을 포함하는 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 범프를 가열하는 단계가 다이를 가열하는 과정을 포함하는 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 상기 방법은,- 기판 위에서 결합 핑거를 지지하고, 그리고- 프레스에 의해 다이를 지지하는,이상의 단계를 포함하고, 이때 결합 핑거에 대해 범프를 압착하는 상기 단계는 다이와 기판을 서로를 향해 움직이도록 힘을 가하는 과정을 포함하는 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 가열 단계와 압착 단계는 원래 범프 높이의 15~20% 사이까지 범프 물질을 변형시키기에 충분할 만큼 큰 온도와 압력에서 실행되는 것을 특징으로 하는 방법.
- 제 7 항에 있어서, 금속 범프가 금을 포함하고, 가열 단계는 섭씨 100~400도의 온도로 범프를 가열하는 과정을 포함하며, 압착 단계는 범프당 10~250 그램 범위의 수직 하중과 동등한 힘을 가하는 과정을 포함하는 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 범프를 리드프레임의 결합 핑거와 접촉시키기 전에,- 기판 위에서 리드프레임을 지지하고, 그리고- 리드프레임 결합 핑거 내 기판에 정해진 양의 충진 물질을 분포시키는,이상의 단계들을 추가로 포함하는 것을 특징으로 하는 방법.
- 제 9 항에 있어서, 상기 충진 물질이 접착성 수지(adhesive resin)를 포함하는 것을 특징으로 하는 방법.
- 다수의 칩 내장 리드프레임 패키지를 형성하는 방법으로서,- 리드프레임마다 결합 핑거 세트를 포함하는 다수의 리드프레임을 제공하고,- 다이마다 금속 범프 세트가 형성되는 다수의 다이를 제공하며,- 지지체 위에 리드프레임을 위치시키고,- 각각의 범프 세트가 결합 핑거 세트와 접촉하도록 리드프레임 위에 다이를 위치시키며,- 범프를 가열하고, 그리고- 결합 핑거에 대해 범프에 압력을 가하기 위해 리드프레임에 대해 다이를 압착시키는,이상의 단계들을 포함하는 것을 특징으로 하는 방법.
- 제 11 항에 있어서, 금속 범프는 금을 포함하고, 가열 단계는 섭씨 100~400도의 온도로 범프를 가열하는 과정을 포함하며, 압착 단계는 범프당 10~250그램의 수직 하중과 동등한 힘을 가하는 과정을 포함하는 것을 특징으로 하는 방법.
- 제 11 항에 있어서, 범프를 리드프레임의 결합 핑거와 접촉시키기 전에,- 기판 위에서 리드프레임을 지지하고, 그리고- 각 세트의 리드프레임 결합 핑거 내 기판에 정해진 양의 충진 물질을 분포시키는,이상의 단계들을 추가로 포함하는 것을 특징으로 하는 방법.
- 제 11 항에 있어서, 칩 내장형 리드프레임 패키지를 개별화하는 단계를 추가로 포함하는 것을 특징으로 하는 방법.
- 제 14 항의 방법에 따라 제작되는 칩 내장형 리드프레임 패키지.
- 제 15 항에 있어서, 다이가 결합 핑거 세트에 관련하여 위쪽으로 구멍나도록 놓이는 것을 특징으로 하는 칩 내장형 리드프레임 패키지.
- 제 15 항에 있어서, 다이가 결합 핑거 세트에 관련하여 아래쪽으로 구멍나도록 놓이는 것을 특징으로 하는 칩 내장형 리드프레임 패키지.
- 제 15 항에 있어서, 리드가 안쪽방향으로 부채꼴 배치되는 것을 특징으로 하는 칩 내장형 리드프레임 패키지.
- 제 15 항에 있어서, 리드가 바깥쪽 방향으로 부채꼴 배치되는 것을 특징으로 하는 칩 내장형 리드프레임 패키지.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18856400P | 2000-03-10 | 2000-03-10 | |
US60/188,564 | 2000-03-10 | ||
US09/802,443 US6828220B2 (en) | 2000-03-10 | 2001-03-09 | Flip chip-in-leadframe package and process |
US09/802,443 | 2001-03-09 |
Publications (2)
Publication Number | Publication Date |
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KR20020089378A KR20020089378A (ko) | 2002-11-29 |
KR100787678B1 true KR100787678B1 (ko) | 2007-12-21 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020027011616A KR100787678B1 (ko) | 2000-03-10 | 2001-03-09 | 플립칩 내장형 리드프레임 패키지 및 그 처리과정 |
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US (1) | US6828220B2 (ko) |
EP (1) | EP1295328A4 (ko) |
JP (1) | JP2004511081A (ko) |
KR (1) | KR100787678B1 (ko) |
TW (1) | TWI234854B (ko) |
WO (1) | WO2001068304A2 (ko) |
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- 2001-03-09 JP JP2001566843A patent/JP2004511081A/ja active Pending
- 2001-03-09 US US09/802,443 patent/US6828220B2/en not_active Expired - Lifetime
- 2001-03-09 KR KR1020027011616A patent/KR100787678B1/ko active IP Right Grant
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Also Published As
Publication number | Publication date |
---|---|
EP1295328A4 (en) | 2010-01-06 |
US20020031902A1 (en) | 2002-03-14 |
US6828220B2 (en) | 2004-12-07 |
KR20020089378A (ko) | 2002-11-29 |
WO2001068304A3 (en) | 2002-09-12 |
JP2004511081A (ja) | 2004-04-08 |
TWI234854B (en) | 2005-06-21 |
EP1295328A2 (en) | 2003-03-26 |
WO2001068304A2 (en) | 2001-09-20 |
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