KR100681155B1 - 질화티타늄막 형성방법 - Google Patents
질화티타늄막 형성방법 Download PDFInfo
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- KR100681155B1 KR100681155B1 KR20000032870A KR20000032870A KR100681155B1 KR 100681155 B1 KR100681155 B1 KR 100681155B1 KR 20000032870 A KR20000032870 A KR 20000032870A KR 20000032870 A KR20000032870 A KR 20000032870A KR 100681155 B1 KR100681155 B1 KR 100681155B1
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- Prior art keywords
- titanium nitride
- nitride film
- plasma
- chlorine
- present
- Prior art date
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000010409 thin film Substances 0.000 title description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000000460 chlorine Substances 0.000 claims abstract description 41
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 41
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 13
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims abstract description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 9
- 239000001257 hydrogen Substances 0.000 claims abstract description 9
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims abstract description 7
- 229910052805 deuterium Inorganic materials 0.000 claims abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 17
- 238000007796 conventional method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 87
- 238000009832 plasma treatment Methods 0.000 description 28
- 238000000151 deposition Methods 0.000 description 26
- 230000008021 deposition Effects 0.000 description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 15
- 229910052799 carbon Inorganic materials 0.000 description 15
- 239000001301 oxygen Substances 0.000 description 15
- 229910052760 oxygen Inorganic materials 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012421 spiking Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
시 편 번 호 | 증착 조건 | 플라즈마 조건 | ||||||
온도 (℃) | 압력 (Torr) | 유입기체 및 유입 유량 | 인가전력 (W) | 온도 (℃) | 압력 (Torr) | 유입기체 및 유입 유량 | ||
A | 500 | 0.28∼0.43 | TiCl4:0.2∼0.4g/min NH3:240∼360sccm H2:30∼45sccm | 0, 80 | 400 | 0.2∼0.4 | H2:80∼120sccm N2:40∼60sccm | |
B | 500 | 0.28∼0.43 | TiCl4:0.2∼0.4g/min NH3:240∼360sccm H2:30∼45sccm | 200, 500 | 350 | 0.8∼1.2 | H2:80∼120sccm N2:40∼60sccm | |
C | 610 | 0.28∼0.43 | TiCl4:0.2∼0.4g/min NH3:240∼360sccm H2:12∼18sccm | 200, 500 | 350 | 0.8∼1.2 | H2:80∼120sccm N2:40∼60sccm | |
D | 450 | 0.28∼0.43 | TiCl4:0.2∼0.4g/min NH3:240∼360sccm | 200, 500 | 350 | 0.8∼1.2 | H2:80∼120sccm N2:40∼60sccm | |
E | 610 | 0.28∼0.43 | TiCl4:0.2∼0.4g/min NH3:240∼360sccm | 200, 500 | 350 | 0.8∼1.2 | H2:80∼120sccm N2:40∼60sccm |
조건 플라즈마 인가전력 | (가) | (나) | (다) | (라) |
80W | 207∼209 | 323∼355 | 140∼200 | 140∼200 |
0W | 207∼209 | 323∼355 | 330∼420 | 350∼450 |
조건 플라즈마 시간 | (가) | (나) | (다) |
60초 | 207∼209 | 323∼355 | 135∼205 |
120초 | 207∼209 | 321∼366 | 135∼210 |
120초 | 207∼209 | 332∼391 | 140∼215 |
조건 시편번호 | (가) | (나) | (다) |
B | 210 | 448 | 264 |
C | 220 | 223 | 172 |
D | 1004 | 2094 | 904 |
조건 시편번호 | (가) | (나) | (다) | (라) |
B | 210 | 488 | 170∼260 | 220∼335 |
C | 220 | 213 | 115∼180 | 115∼180 |
D | 1004 | 1970 | 440∼665 | 555∼840 |
조건 시편번호 | (가) | (나) | (다) | (라) |
C | 220 | 213 | 120∼180 | 120∼180 |
E | 63 | 47 | 40∼47 | 40∼47 |
Claims (7)
- 염화티타늄 성분과 질소 성분을 각각 함유하는 반응기체를 이용하여 실리콘 기판 상에 질화티타늄막을 형성하는 제1 단계와;상기 질화티타늄막에 함유된 염소를 제거하기 위하여 상기 질화티타늄막이 형성된 상기 실리콘 기판을 수소 플라즈마 또는 중수소 플라즈마 분위기에 노출시키는 제2 단계를 포함하는 것을 특징으로 하는 질화티타늄막 형성방법.
- 제1항에 있어서, 상기 제1 단계가 열 화학 증착법 혹은 플라즈마 화학 증착법에 의하여 행해지는 것을 특징으로 하는 질화티타늄막 형성방법.
- 제1항에 있어서, 상기 제1 및 제2 단계를 순차적으로 2회 이상 반복하는 특징으로 하는 질화티타늄막 형성방법.
- 제1항에 있어서, 상기 제2 단계가 수소 플라즈마 또는 중수소 플라즈마에 질소 플라즈마를 더 포함하는 것을 특징으로 하는 질화티타늄막 형성방법.
- 제1항에 있어서, 상기 제2 단계가 300~600℃의 온도 범위 내에서 행해지는 것을 특징으로 하는 질화티타늄막 형성방법.
- 제1항에 있어서, 상기 제2 단계가 반응실의 압력이 0.1~10Torr인 범위 내에서 행해지는 것을 특징으로 하는 질화티타늄막 형성방법.
- 제6항에 있어서, 상기 제2 단계를 30~300초의 시간 범위 내에서 진행하되, 상기 플라즈마에 가해지는 전력은 50~700와트의 범위인 것을 특징으로 하는 질화티타늄막 형성방법.
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KR20000032870A KR100681155B1 (ko) | 2000-06-15 | 2000-06-15 | 질화티타늄막 형성방법 |
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KR20000032870A KR100681155B1 (ko) | 2000-06-15 | 2000-06-15 | 질화티타늄막 형성방법 |
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KR20010112871A KR20010112871A (ko) | 2001-12-22 |
KR100681155B1 true KR100681155B1 (ko) | 2007-02-09 |
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Families Citing this family (1)
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US8975187B2 (en) | 2013-03-15 | 2015-03-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stress-controlled formation of tin hard mask |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR940007985A (ko) * | 1992-09-07 | 1994-04-28 | 김광호 | 반도체장치의 배선층 형성방법 |
KR19980060529A (ko) * | 1996-12-31 | 1998-10-07 | 김영환 | 반도체 소자의 금속 배선 형성 방법 |
KR19980060900A (ko) * | 1996-12-31 | 1998-10-07 | 김영환 | 반도체 소자의 금속배선 형성 방법 |
KR19990045603A (ko) * | 1997-11-26 | 1999-06-25 | 가네꼬 히사시 | 티탄막 형성방법 |
KR19990059104A (ko) * | 1997-12-30 | 1999-07-26 | 김영환 | 반도체 소자의 장벽 금속층 형성 방법 |
KR20000027391A (ko) * | 1998-10-28 | 2000-05-15 | 김영환 | 텅스텐질화막 전극을 갖는 캐패시터 형성 방법 |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR940007985A (ko) * | 1992-09-07 | 1994-04-28 | 김광호 | 반도체장치의 배선층 형성방법 |
KR19980060529A (ko) * | 1996-12-31 | 1998-10-07 | 김영환 | 반도체 소자의 금속 배선 형성 방법 |
KR19980060900A (ko) * | 1996-12-31 | 1998-10-07 | 김영환 | 반도체 소자의 금속배선 형성 방법 |
KR19990045603A (ko) * | 1997-11-26 | 1999-06-25 | 가네꼬 히사시 | 티탄막 형성방법 |
KR19990059104A (ko) * | 1997-12-30 | 1999-07-26 | 김영환 | 반도체 소자의 장벽 금속층 형성 방법 |
KR20000027391A (ko) * | 1998-10-28 | 2000-05-15 | 김영환 | 텅스텐질화막 전극을 갖는 캐패시터 형성 방법 |
Non-Patent Citations (3)
Title |
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1019980060529 * |
1019990045603 * |
1019990059104 * |
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