JP2011146711A5 - - Google Patents
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- Publication number
- JP2011146711A5 JP2011146711A5 JP2011004797A JP2011004797A JP2011146711A5 JP 2011146711 A5 JP2011146711 A5 JP 2011146711A5 JP 2011004797 A JP2011004797 A JP 2011004797A JP 2011004797 A JP2011004797 A JP 2011004797A JP 2011146711 A5 JP2011146711 A5 JP 2011146711A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- copper
- dielectric
- layer
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/688,154 | 2010-01-15 | ||
| US12/688,154 US8268722B2 (en) | 2009-06-03 | 2010-01-15 | Interfacial capping layers for interconnects |
| US12/689,803 | 2010-01-19 | ||
| US12/689,803 US7858510B1 (en) | 2008-02-28 | 2010-01-19 | Interfacial layers for electromigration resistance improvement in damascene interconnects |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011146711A JP2011146711A (ja) | 2011-07-28 |
| JP2011146711A5 true JP2011146711A5 (ko) | 2014-02-27 |
| JP5773306B2 JP5773306B2 (ja) | 2015-09-02 |
Family
ID=44268066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011004797A Active JP5773306B2 (ja) | 2010-01-15 | 2011-01-13 | 半導体素子構造を形成する方法および装置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5773306B2 (ko) |
| KR (1) | KR101742825B1 (ko) |
| CN (1) | CN102130046B (ko) |
| TW (2) | TWI612618B (ko) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7727880B1 (en) | 2004-11-03 | 2010-06-01 | Novellus Systems, Inc. | Protective self-aligned buffer layers for damascene interconnects |
| US7727881B1 (en) | 2004-11-03 | 2010-06-01 | Novellus Systems, Inc. | Protective self-aligned buffer layers for damascene interconnects |
| US8753978B2 (en) | 2011-06-03 | 2014-06-17 | Novellus Systems, Inc. | Metal and silicon containing capping layers for interconnects |
| CN104008995B (zh) * | 2013-02-22 | 2017-09-01 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制备方法 |
| KR102138400B1 (ko) * | 2013-03-05 | 2020-07-27 | 엔테그리스, 아이엔씨. | 이온 주입 조성물, 시스템 및 방법 |
| WO2015013266A1 (en) * | 2013-07-24 | 2015-01-29 | Applied Materials, Inc | Cobalt substrate processing systems, apparatus, and methods |
| CN104576514B (zh) * | 2013-10-29 | 2017-11-24 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制备方法 |
| CN104637864B (zh) * | 2013-11-14 | 2017-11-24 | 中芯国际集成电路制造(上海)有限公司 | 提高数据保持能力的方法 |
| US9368448B2 (en) * | 2013-12-20 | 2016-06-14 | Applied Materials, Inc. | Metal-containing films as dielectric capping barrier for advanced interconnects |
| US9465071B2 (en) * | 2014-03-04 | 2016-10-11 | Mediatek Inc. | Method and apparatus for generating featured scan pattern |
| US10319908B2 (en) * | 2014-05-01 | 2019-06-11 | Crossbar, Inc. | Integrative resistive memory in backend metal layers |
| US9633896B1 (en) | 2015-10-09 | 2017-04-25 | Lam Research Corporation | Methods for formation of low-k aluminum-containing etch stop films |
| WO2018063815A1 (en) | 2016-10-02 | 2018-04-05 | Applied Materials, Inc. | Doped selective metal caps to improve copper electromigration with ruthenium liner |
| US9859153B1 (en) * | 2016-11-14 | 2018-01-02 | Lam Research Corporation | Deposition of aluminum oxide etch stop layers |
| CN107256845A (zh) * | 2017-05-25 | 2017-10-17 | 上海集成电路研发中心有限公司 | 一种铜互连结构及其制造方法 |
| US20190127212A1 (en) * | 2017-10-31 | 2019-05-02 | Texas Instruments Incorporated | Forming a passivation coating for mems devices |
| US10741440B2 (en) * | 2018-06-05 | 2020-08-11 | Lam Research Corporation | Metal liner passivation and adhesion enhancement by zinc doping |
| US10707119B1 (en) * | 2019-01-14 | 2020-07-07 | Globalfoundries Inc. | Interconnect structures with airgaps and dielectric-capped interconnects |
| CN111769074A (zh) * | 2019-04-02 | 2020-10-13 | 长鑫存储技术有限公司 | 半导体互连结构及其制作方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0765179B2 (ja) * | 1987-05-15 | 1995-07-12 | 日本電信電話株式会社 | 化学的気相成長方法 |
| US6605531B1 (en) * | 1997-11-26 | 2003-08-12 | Applied Materials, Inc. | Hole-filling technique using CVD aluminum and PVD aluminum integration |
| US20020048926A1 (en) * | 2000-09-14 | 2002-04-25 | Konecni Anthony J. | Method for forming a self-aligned copper capping diffusion barrier |
| US6664182B2 (en) * | 2001-04-25 | 2003-12-16 | Macronix International Co. Ltd. | Method of improving the interlayer adhesion property of low-k layers in a dual damascene process |
| US6518167B1 (en) * | 2002-04-16 | 2003-02-11 | Advanced Micro Devices, Inc. | Method of forming a metal or metal nitride interface layer between silicon nitride and copper |
| WO2004040642A1 (en) * | 2002-10-29 | 2004-05-13 | Asm America, Inc. | Oxygen bridge structures and methods |
| KR100564801B1 (ko) | 2003-12-30 | 2006-03-28 | 동부아남반도체 주식회사 | 반도체 제조 방법 |
| US7102232B2 (en) * | 2004-04-19 | 2006-09-05 | International Business Machines Corporation | Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layer |
| US7704873B1 (en) * | 2004-11-03 | 2010-04-27 | Novellus Systems, Inc. | Protective self-aligned buffer layers for damascene interconnects |
| TW200802703A (en) * | 2005-11-28 | 2008-01-01 | Nxp Bv | Method of forming a self aligned copper capping layer |
| JP2007180408A (ja) * | 2005-12-28 | 2007-07-12 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| DE102007004867B4 (de) * | 2007-01-31 | 2009-07-30 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Erhöhen der Zuverlässigkeit von kupferbasierten Metallisierungsstrukturen in einem Mikrostrukturbauelement durch Anwenden von Aluminiumnitrid |
| US7754588B2 (en) * | 2007-09-28 | 2010-07-13 | Tel Epion Inc. | Method to improve a copper/dielectric interface in semiconductor devices |
-
2011
- 2011-01-13 JP JP2011004797A patent/JP5773306B2/ja active Active
- 2011-01-14 TW TW100101507A patent/TWI612618B/zh active
- 2011-01-14 TW TW105123303A patent/TW201709418A/zh unknown
- 2011-01-14 CN CN201110021170.4A patent/CN102130046B/zh active Active
- 2011-01-17 KR KR1020110004334A patent/KR101742825B1/ko active IP Right Grant
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