KR100555049B1 - 웨이퍼 형상의 피가공물 가공 방법 - Google Patents
웨이퍼 형상의 피가공물 가공 방법 Download PDFInfo
- Publication number
- KR100555049B1 KR100555049B1 KR1020030044331A KR20030044331A KR100555049B1 KR 100555049 B1 KR100555049 B1 KR 100555049B1 KR 1020030044331 A KR1020030044331 A KR 1020030044331A KR 20030044331 A KR20030044331 A KR 20030044331A KR 100555049 B1 KR100555049 B1 KR 100555049B1
- Authority
- KR
- South Korea
- Prior art keywords
- workpiece
- pressure
- processing
- wafer
- lapping
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000003754 machining Methods 0.000 title claims description 3
- 239000000463 material Substances 0.000 claims abstract description 7
- 238000005498 polishing Methods 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000002671 adjuvant Substances 0.000 claims description 2
- 238000003672 processing method Methods 0.000 claims 1
- 230000007423 decrease Effects 0.000 abstract description 4
- 239000012752 auxiliary agent Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 15
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000004744 fabric Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/10—Single-purpose machines or devices
- B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
- B24B7/17—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
Description
상태 (종래 기술) | 상태 (본 발명) | ||
기하학적 데이터 (2시그마 값) | GBIR(㎛) | 1.19 | 0.99 |
목표에 대한 두께차 (2시그마 값) | 두께(㎛) | 7.3 | 6.7 |
*GBIR = global badsurface-referenced ideal plane/range, 총 웨이퍼 면적에 대하여, 불량 표면- 참조된 이상적 평면으로부터의 양과 음의 편차 범위.
Claims (8)
- 2개의 판 사이에서, 공급된 보조제와 피가공물(workpiece)에 작용하는 압력(pressure)에 의해 상기 피가공물로부터 재료를 마모-제거(abrasion)하는, 웨이퍼-형상의 피가공물 가공 방법으로서,피가공물 상에 작용하는 압력은, 상기 피가공물의 가공 중, 한번 이상, 크게 감소된 다음 다시 증가되며, 상기 압력이 증가될 때, 상기 보조제의 공급량은 감소되는 것을 특징으로 하는 웨이퍼 형상의 피가공물 가공방법.
- 제1항에 있어서,상기 압력은 원래 수준의 적어도 20%까지 감소되는 것을 특징으로 하는 웨이퍼 형상의 피가공물 가공 방법.
- 제1항에 있어서,상기 보조제의 공급량은 원래 수준의 0 내지 50%까지 감소되는 것을 특징으로 하는 웨이퍼 형상의 피가공물 가공 방법.
- 제1항에 있어서,상기 피가공물은, 양면 연마기(double-side polishing machine)의 아래쪽 작업원판과 위쪽 작업 원판 사이에서, 연마제의 공급과 함께 가공되는 것을 특징으로 하는 웨이퍼 형상의 피가공물의 가공방법.
- 제1항에 있어서,상기 피가공물은, 단면 연마기(single-side polishing machine)의 아래쪽 작업 원판과 캐리어 플레이트 사이에서, 연마제의 공급과 함께 가공되는 것을 특징으로 하는 웨이퍼 형상의 피가공물 가공방법.
- 제1항에 있어서,상기 피가공물은 래핑기(lapping machine)의 아래쪽 작업 원판과 위쪽 작업 원판 사이에서 래핑용 연마제(lapping abrasive)의 공급과 함께 가공되는 것을 특징으로 하는 웨이어-형상의 피가공물의 가공방법.
- 제1항에 있어서,반도체 웨이퍼를 재료-제거 가공(material-removing machining)하는 것을 특징으로 하는 웨이퍼 형상의 피가공물의 가공방법.
- 제1항에 있어서,상기 피가공물은 다른 피가공물과 함께 재료 제거 가공되는 것을 특징으로 하는 웨이퍼 형상의 피가공물의 가공방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10230146.8 | 2002-07-04 | ||
DE10230146A DE10230146B4 (de) | 2002-07-04 | 2002-07-04 | Verfahren zum Bearbeiten eines scheibenförmigen Werkstückes |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040004121A KR20040004121A (ko) | 2004-01-13 |
KR100555049B1 true KR100555049B1 (ko) | 2006-03-03 |
Family
ID=29761628
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030044331A KR100555049B1 (ko) | 2002-07-04 | 2003-07-01 | 웨이퍼 형상의 피가공물 가공 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6811473B2 (ko) |
JP (1) | JP4012488B2 (ko) |
KR (1) | KR100555049B1 (ko) |
CN (1) | CN1206081C (ko) |
DE (1) | DE10230146B4 (ko) |
TW (1) | TWI224832B (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7840300B2 (en) * | 2006-05-31 | 2010-11-23 | Robert Arthur Harker | Full spectrum lapidary 3D image scanner and method |
US7976379B2 (en) | 2007-11-09 | 2011-07-12 | Igt | Gaming system and method having configurable bonus game triggering outcomes |
US8491381B2 (en) | 2011-09-28 | 2013-07-23 | Igt | Gaming system, gaming device and method for providing a multiple player, multiple game bonusing environment |
US10540855B2 (en) | 2016-09-21 | 2020-01-21 | Igt | Gaming system and method for redistributing funds amongst players of skill games |
US10475293B2 (en) | 2017-12-11 | 2019-11-12 | Igt | Gaming system and method for redistributing funds amongst players of skill games |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4393628A (en) * | 1981-05-04 | 1983-07-19 | International Business Machines Corporation | Fixed abrasive polishing method and apparatus |
TW358764B (en) * | 1997-07-07 | 1999-05-21 | Super Silicon Crystal Res Inst | A method of double-side lapping a wafer and an apparatus therefor |
US6709981B2 (en) * | 2000-08-16 | 2004-03-23 | Memc Electronic Materials, Inc. | Method and apparatus for processing a semiconductor wafer using novel final polishing method |
-
2002
- 2002-07-04 DE DE10230146A patent/DE10230146B4/de not_active Expired - Lifetime
-
2003
- 2003-06-17 CN CNB031428975A patent/CN1206081C/zh not_active Expired - Lifetime
- 2003-06-27 US US10/607,626 patent/US6811473B2/en not_active Expired - Lifetime
- 2003-07-01 KR KR1020030044331A patent/KR100555049B1/ko active IP Right Grant
- 2003-07-01 JP JP2003189678A patent/JP4012488B2/ja not_active Expired - Lifetime
- 2003-07-02 TW TW092118126A patent/TWI224832B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US20040043709A1 (en) | 2004-03-04 |
TWI224832B (en) | 2004-12-01 |
CN1206081C (zh) | 2005-06-15 |
DE10230146B4 (de) | 2004-11-04 |
DE10230146A1 (de) | 2004-01-22 |
KR20040004121A (ko) | 2004-01-13 |
US6811473B2 (en) | 2004-11-02 |
TW200401405A (en) | 2004-01-16 |
JP4012488B2 (ja) | 2007-11-21 |
CN1468685A (zh) | 2004-01-21 |
JP2004034285A (ja) | 2004-02-05 |
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