KR100523405B1 - 자장 인가식 실리콘 단결정 인상 방법 - Google Patents
자장 인가식 실리콘 단결정 인상 방법 Download PDFInfo
- Publication number
- KR100523405B1 KR100523405B1 KR10-2003-0060390A KR20030060390A KR100523405B1 KR 100523405 B1 KR100523405 B1 KR 100523405B1 KR 20030060390 A KR20030060390 A KR 20030060390A KR 100523405 B1 KR100523405 B1 KR 100523405B1
- Authority
- KR
- South Korea
- Prior art keywords
- single crystal
- silicon single
- crystal rod
- silicon
- magnetic field
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (2)
- 챔버(11) 내에 설치되는 석영 도가니(13)에 실리콘 융액(12)을 저장하여 한 쌍의 여자 코일(31, 31)에 의해 형성되는 수평 자장이 상기 실리콘 융액(12)에 인가되고, 와이어 케이블(23)의 하단부에 설치된 종결정(24)을 상기 실리콘 융액(12)에 침지하여 상기 와이어 케이블(23)을 회전시키면서 인상함으로써 상승하는 상기 종결정(24)의 하부에 교축부(25a)를 형성하고, 그 후 더욱 상기 와이어 케이블(23)을 회전시키면서 인상함으로써 상기 종결정(24)을 회전시키면서 상승시켜 상기 교축부(25a)의 하부에 직경이 300 mm 이상의 실리콘 단결정봉(25)을 형성하는 실리콘 단결정 인상 방법에 있어서,상기 여자 코일(31, 31)이 안장형이고,상기 여자 코일(31, 31)의 상단부와 중심 사이의 세로 방향에 있어서의 중점이 실리콘 융액(12)의 표면보다도 하방에 배치되고,상기 실리콘 단결정봉(25)의 형성시에 상기 종결정(24)이 8회전/분 이상, 12회전/분 이하의 속도로 회전하도록 상기 와이어 케이블(23)을 회전시키는 것을 특징으로 하는 자장 인가식 실리콘 단결정 인상 방법.
- 삭제
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002252592A JP4345276B2 (ja) | 2002-08-30 | 2002-08-30 | 磁場印加式シリコン単結晶の引上げ方法 |
JPJP-P-2002-00252592 | 2002-08-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040020813A KR20040020813A (ko) | 2004-03-09 |
KR100523405B1 true KR100523405B1 (ko) | 2005-10-24 |
Family
ID=32058826
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2003-0060390A KR100523405B1 (ko) | 2002-08-30 | 2003-08-29 | 자장 인가식 실리콘 단결정 인상 방법 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP4345276B2 (ko) |
KR (1) | KR100523405B1 (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006069841A (ja) * | 2004-09-02 | 2006-03-16 | Sumco Corp | 磁場印加式シリコン単結晶の引上げ方法 |
KR100788018B1 (ko) * | 2004-11-29 | 2007-12-21 | 주식회사 실트론 | 실리콘 단결정 잉곳 및 그로부터 제조된 실리콘 웨이퍼 |
KR100840751B1 (ko) * | 2005-07-26 | 2008-06-24 | 주식회사 실트론 | 고품질 실리콘 단결정 잉곳 제조 방법, 성장 장치 및그로부터 제조된 잉곳 , 웨이퍼 |
JP4757129B2 (ja) * | 2006-07-20 | 2011-08-24 | 三菱電機株式会社 | 超電導電磁石 |
KR100793371B1 (ko) * | 2006-08-28 | 2008-01-11 | 주식회사 실트론 | 실리콘 단결정 성장 방법 및 성장 장치 |
JP5889509B2 (ja) * | 2008-05-26 | 2016-03-22 | 株式会社東芝 | 単結晶引上げ装置用超電導マグネット装置 |
JP5056603B2 (ja) * | 2008-06-11 | 2012-10-24 | 株式会社Sumco | シリコン単結晶の引上げ方法及び該方法により引上げられたインゴットから得られたシリコン単結晶ウェーハ |
JP5454625B2 (ja) * | 2012-06-20 | 2014-03-26 | 株式会社Sumco | シリコン単結晶の引上げ方法により引上げられたインゴットから得られたシリコン単結晶ウェーハ |
-
2002
- 2002-08-30 JP JP2002252592A patent/JP4345276B2/ja not_active Expired - Fee Related
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2003
- 2003-08-29 KR KR10-2003-0060390A patent/KR100523405B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR20040020813A (ko) | 2004-03-09 |
JP2004091240A (ja) | 2004-03-25 |
JP4345276B2 (ja) | 2009-10-14 |
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