KR100504563B1 - 이미지 센서 제조 방법 - Google Patents
이미지 센서 제조 방법 Download PDFInfo
- Publication number
- KR100504563B1 KR100504563B1 KR1020040066697A KR20040066697A KR100504563B1 KR 100504563 B1 KR100504563 B1 KR 100504563B1 KR 1020040066697 A KR1020040066697 A KR 1020040066697A KR 20040066697 A KR20040066697 A KR 20040066697A KR 100504563 B1 KR100504563 B1 KR 100504563B1
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- South Korea
- Prior art keywords
- pad
- forming
- barrier layer
- metal pad
- image sensor
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 63
- 239000002184 metal Substances 0.000 claims abstract description 63
- 230000004888 barrier function Effects 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- 230000001681 protective effect Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 5
- 238000002161 passivation Methods 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 54
- 238000000206 photolithography Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 fluorine ions Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical class [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (9)
- 액티브 영역과 패드 영역으로 구분되는 기판상의 패드 영역에 금속 패드를 형성하는 단계;상기 금속 패드를 포함한 기판 전면에 보호막을 형성하고 상기 보호막을 선택적으로 제거하여 상기 금속 패드에 패드 오픈부를 형성하는 단계;상기 패드 오픈부를 포함하여 상기 기판 전면에 베리어층을 소정의 두께로 형성하는 단계;상기 액티브 영역의 상기 베리어층위에 R,G,B 칼라 필터층을 형성하는 단계;상기 각 칼라 필터층 상측에 마이크로 렌즈를 형성하는 단계; 그리고상기 패드 영역의 베리어층을 제거하는 단계를 포함하고, 상기 패드 영역의 베리어층의 제거는 상기 마이크로 렌즈 형성과 동일한 공정으로 이루어짐을 특징으로 하는 이미지 센서의 제조 방법.
- 제 1 항에 있어서,상기 기판과 상기 금속 패드 사이에 절연막을 더 형성함을 특징으로 하는 이미지 센서의 제조 방법.
- 제 1 항에 있어서,상기 베리어층과 상기 칼라 필터층들 사이 및 상기 칼라 필터층들과 상기 마이크로 렌즈 사이에 각각 제 1, 제 2 평탄화층을 더 형성함을 특징으로 하는 이미지 센서의 제조 방법.
- 제 1 항에 있어서,상기 금속 패드를 오픈하고 상기 베리어층을 형성하기 전에 상기 금속 패드 표면을 부식시킬 수 있는 물질을 제거하기 위해 1차 열처리하는 단계를 더 포함함을 특징으로 하는 이미지 센서의 제조방법.
- 제 1 항에 있어서,상기 베리어층은 PE 산화막, PE TEOS 또는 PE 질화막으로 형성함을 특징으로 하는 이미지 센서의 제조 방법.
- 제 1 항에 있어서,상기 베리어층은 약 200Å 내지 600Å정도의 두께로 형성함을 특징으로 하는 이미지 센서의 제조 방법.
- 제 1 항에 있어서,상기 금속 패드는 알루미늄으로 형성함을 특징으로 하는 이미지 센서의 제조 방법.
- 삭제
- 제 1 항에 있어서,상기 패드 영역의 베리어층을 제거한 후, N2 가스를 이용한 RIE 열처리(curing)를 실시하여 상기 금속 패드 표면에 잔존할 수 있는 부식성 물질을 제거하는 단계를 더 포함함을 특징으로 하는 이미지 센서의 제조 방법.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040066697A KR100504563B1 (ko) | 2004-08-24 | 2004-08-24 | 이미지 센서 제조 방법 |
JP2004370755A JP2006066858A (ja) | 2004-08-24 | 2004-12-22 | イメージセンサの製造方法 |
DE102004063141A DE102004063141B4 (de) | 2004-08-24 | 2004-12-22 | Verfahren zum Herstellen eines CMOS-Bildsensors |
US11/025,379 US7268009B2 (en) | 2004-08-24 | 2004-12-28 | Method for fabricating a CMOS image sensor |
CNB2004101034961A CN100495713C (zh) | 2004-08-24 | 2004-12-28 | 用于制造cmos图像传感器的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040066697A KR100504563B1 (ko) | 2004-08-24 | 2004-08-24 | 이미지 센서 제조 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR100504563B1 true KR100504563B1 (ko) | 2005-08-01 |
Family
ID=36093566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040066697A KR100504563B1 (ko) | 2004-08-24 | 2004-08-24 | 이미지 센서 제조 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7268009B2 (ko) |
JP (1) | JP2006066858A (ko) |
KR (1) | KR100504563B1 (ko) |
CN (1) | CN100495713C (ko) |
DE (1) | DE102004063141B4 (ko) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100720513B1 (ko) | 2005-12-28 | 2007-05-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
KR100720469B1 (ko) * | 2005-12-28 | 2007-05-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
KR100818526B1 (ko) | 2006-12-20 | 2008-03-31 | 동부일렉트로닉스 주식회사 | 이미지 센서의 제조 방법 |
KR100866675B1 (ko) | 2006-12-28 | 2008-11-04 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
US7595211B2 (en) | 2005-12-29 | 2009-09-29 | Dongbu Hitek Co., Ltd. | Method of manufacturing a complementary metal oxide silicon image sensor |
US7611921B2 (en) | 2005-12-28 | 2009-11-03 | Dongbu Electronics Co., Ltd. | Method for manufacturing CMOS image sensor which improves sensitivity by removing a passivation membrane in a pixel region of the CMOS image sensor |
US7670863B2 (en) | 2005-12-28 | 2010-03-02 | Dongbu Electronics Co., Ltd. | Method of fabricating complementary metal oxide silicon image sensor |
US11031425B2 (en) | 2018-11-05 | 2021-06-08 | Samsung Electronics Co., Ltd. | Image sensor and method of manufacturing the same |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100672714B1 (ko) * | 2004-07-20 | 2007-01-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조 방법 |
KR100660323B1 (ko) * | 2004-12-31 | 2006-12-22 | 동부일렉트로닉스 주식회사 | 시모스 이미지 센서의 제조방법 |
KR100664790B1 (ko) * | 2005-06-27 | 2007-01-04 | 동부일렉트로닉스 주식회사 | 이미지 센서의 제조 방법 |
KR100670477B1 (ko) * | 2005-09-08 | 2007-01-16 | 매그나칩 반도체 유한회사 | Lto 보호막을 생략할 수 있는 이미지센서 제조 방법 |
KR100660332B1 (ko) * | 2005-12-28 | 2006-12-22 | 동부일렉트로닉스 주식회사 | 이미지 센서의 제조방법 |
KR100720527B1 (ko) * | 2005-12-28 | 2007-05-22 | 동부일렉트로닉스 주식회사 | 시모스 이미지 센서 및 그 제조 방법 |
US8003983B2 (en) * | 2006-04-19 | 2011-08-23 | United Microelectronics Corp. | Wafer for manufacturing image sensors, test key layout for defects inspection, and methods for manufacturing image sensors and for forming test key |
US7973271B2 (en) | 2006-12-08 | 2011-07-05 | Sony Corporation | Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera |
JP2008166677A (ja) * | 2006-12-08 | 2008-07-17 | Sony Corp | 固体撮像装置とその製造方法並びにカメラ |
US7498190B2 (en) * | 2007-03-01 | 2009-03-03 | United Microelectronics Corp. | Method for fabricating a CMOS image sensor |
KR20090072254A (ko) * | 2007-12-28 | 2009-07-02 | 주식회사 동부하이텍 | 씨모스 이미지 센서 및 그의 제조방법 |
US7723150B2 (en) * | 2008-06-27 | 2010-05-25 | United Microelectronics Corp. | Image sensor and fabricating method thereof |
KR100997678B1 (ko) * | 2008-07-23 | 2010-12-02 | 주식회사 동부하이텍 | 씨모스 이미지 센서의 제조 방법 |
TWI452354B (zh) * | 2009-08-19 | 2014-09-11 | United Microelectronics Corp | 光學元件的製造方法 |
US8466000B2 (en) | 2011-04-14 | 2013-06-18 | United Microelectronics Corp. | Backside-illuminated image sensor and fabricating method thereof |
KR20140085656A (ko) * | 2012-12-26 | 2014-07-08 | 에스케이하이닉스 주식회사 | 이미지센서 및 그 제조 방법 |
JP6168915B2 (ja) * | 2013-08-22 | 2017-07-26 | キヤノン株式会社 | 半導体装置の製造方法 |
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KR100521970B1 (ko) | 1998-06-30 | 2006-01-12 | 매그나칩 반도체 유한회사 | 패드 금속의 표면 보호를 위한 이미지센서 제조방법 |
US6249034B1 (en) * | 1999-03-29 | 2001-06-19 | Intel Corporation | Microlens formed of negative photoresist |
US6507059B2 (en) * | 2001-06-19 | 2003-01-14 | United Microelectronics Corp. | Structure of a CMOS image sensor |
TW559950B (en) * | 2002-03-13 | 2003-11-01 | Macronix Int Co Ltd | Memory device and method of forming passivation film thereof |
KR100462757B1 (ko) | 2002-03-14 | 2004-12-20 | 동부전자 주식회사 | 이미지 센서용 반도체 소자 제조 방법 |
-
2004
- 2004-08-24 KR KR1020040066697A patent/KR100504563B1/ko active IP Right Grant
- 2004-12-22 DE DE102004063141A patent/DE102004063141B4/de not_active Expired - Fee Related
- 2004-12-22 JP JP2004370755A patent/JP2006066858A/ja active Pending
- 2004-12-28 CN CNB2004101034961A patent/CN100495713C/zh not_active Expired - Fee Related
- 2004-12-28 US US11/025,379 patent/US7268009B2/en active Active
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100720513B1 (ko) | 2005-12-28 | 2007-05-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
KR100720469B1 (ko) * | 2005-12-28 | 2007-05-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
US7611921B2 (en) | 2005-12-28 | 2009-11-03 | Dongbu Electronics Co., Ltd. | Method for manufacturing CMOS image sensor which improves sensitivity by removing a passivation membrane in a pixel region of the CMOS image sensor |
US7670863B2 (en) | 2005-12-28 | 2010-03-02 | Dongbu Electronics Co., Ltd. | Method of fabricating complementary metal oxide silicon image sensor |
US7595211B2 (en) | 2005-12-29 | 2009-09-29 | Dongbu Hitek Co., Ltd. | Method of manufacturing a complementary metal oxide silicon image sensor |
KR100818526B1 (ko) | 2006-12-20 | 2008-03-31 | 동부일렉트로닉스 주식회사 | 이미지 센서의 제조 방법 |
US7763491B2 (en) | 2006-12-20 | 2010-07-27 | Dongbu Hitek Co., Ltd. | Method for manufacturing image sensor |
KR100866675B1 (ko) | 2006-12-28 | 2008-11-04 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
US11031425B2 (en) | 2018-11-05 | 2021-06-08 | Samsung Electronics Co., Ltd. | Image sensor and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
US20060046341A1 (en) | 2006-03-02 |
CN100495713C (zh) | 2009-06-03 |
US7268009B2 (en) | 2007-09-11 |
DE102004063141B4 (de) | 2009-04-09 |
CN1741279A (zh) | 2006-03-01 |
JP2006066858A (ja) | 2006-03-09 |
DE102004063141A1 (de) | 2006-04-20 |
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