KR100866675B1 - 씨모스 이미지 센서의 제조방법 - Google Patents
씨모스 이미지 센서의 제조방법 Download PDFInfo
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- KR100866675B1 KR100866675B1 KR1020060135935A KR20060135935A KR100866675B1 KR 100866675 B1 KR100866675 B1 KR 100866675B1 KR 1020060135935 A KR1020060135935 A KR 1020060135935A KR 20060135935 A KR20060135935 A KR 20060135935A KR 100866675 B1 KR100866675 B1 KR 100866675B1
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- microlens
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (4)
- 씨모스 이미지 센서의 제조방법에 있어서,칼라 필터층 형성 영역과 패드 영역으로 구분되는 반도체 기판상의 패드 영역에 금속 패드를 형성하는 단계;상기 금속 패드를 포함한 반도체 기판 전면에 보호막을 형성하고 상기 금속 패드의 표면이 노출되도록 상기 보호막을 선택적으로 제거하여 패드 오픈부를 형성하는 단계;상기 반도체 기판의 칼라 필터층 형성 영역에 제 1 평탄화층을 형성하는 단계;상기 제 1 평탄화층상에 칼라 필터층을 형성하는 단계;상기 칼라 필터층 상측에 제 2 평탄화층을 형성하는 단계와;상기 제 2 평탄화층 상측에 마이크로렌즈를 형성하는 단계를 포함하되,상기 마이크로 렌즈 형성단계 이전에 상기 제 2 평탄화층상에 DUV를 이용하여 패터닝되는 포토레지스트인 제 1 물질층을 형성하고, 이 제 1 물질층상에 마이크로 렌즈용으로 MUV를 이용하여 패터닝되는 포토레지스트인 제 2 물질층을 각각 연속하여 증착하고 노광한 후, 브리치 공정을 실행하는 것을 특징으로 하는 씨모스 이미지 센서의 제조방법.
- 삭제
- 제 1 항에 있어서, 상기 제 1 및 제 2 물질층은 함께 1회의 현상공정을 진행하는 것을 특징으로 하는 씨모스 이미지 센서의 제조방법.
- 제 1 항에 있어서, 상기 마이크로 렌즈의 형성단계는 상기 제 1 물질층의 패터닝시의 노출 에너지를 이용하여 MUV 포토레지스트의 CD가 DUV 포토레지스트의 CD보다 큰 것을 특징으로 하는 씨모스 이미지 센서의 제조방법
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060135935A KR100866675B1 (ko) | 2006-12-28 | 2006-12-28 | 씨모스 이미지 센서의 제조방법 |
US11/932,483 US7879640B2 (en) | 2006-12-28 | 2007-10-31 | CMOS image sensor and method for fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020060135935A KR100866675B1 (ko) | 2006-12-28 | 2006-12-28 | 씨모스 이미지 센서의 제조방법 |
Publications (2)
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KR20080061438A KR20080061438A (ko) | 2008-07-03 |
KR100866675B1 true KR100866675B1 (ko) | 2008-11-04 |
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KR1020060135935A KR100866675B1 (ko) | 2006-12-28 | 2006-12-28 | 씨모스 이미지 센서의 제조방법 |
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US (1) | US7879640B2 (ko) |
KR (1) | KR100866675B1 (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100884977B1 (ko) * | 2007-10-18 | 2009-02-23 | 주식회사 동부하이텍 | 씨모스 이미지 센서 및 그의 제조 방법 |
US8227288B2 (en) * | 2009-03-30 | 2012-07-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor and method of fabricating same |
US11276790B2 (en) * | 2018-02-01 | 2022-03-15 | Kyoto Semiconductor Co., Ltd. | Semiconductor light receiving element |
CN111968996A (zh) * | 2020-07-29 | 2020-11-20 | 上海集成电路研发中心有限公司 | 一种改善微透镜工艺中拉线异常的方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20050060649A (ko) * | 2003-12-17 | 2005-06-22 | 매그나칩 반도체 유한회사 | 마이크로렌즈를 구비한 이미지센서의 제조방법 |
KR100504563B1 (ko) | 2004-08-24 | 2005-08-01 | 동부아남반도체 주식회사 | 이미지 센서 제조 방법 |
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KR0147401B1 (ko) * | 1994-02-23 | 1998-08-01 | 구본준 | 고체촬상소자 및 그 제조방법 |
US6665014B1 (en) * | 1998-11-25 | 2003-12-16 | Intel Corporation | Microlens and photodetector |
US6566269B1 (en) * | 2000-07-14 | 2003-05-20 | Lucent Technologies Inc. | Removal of post etch residuals on wafer surface |
KR100640972B1 (ko) * | 2004-07-15 | 2006-11-02 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그의 제조 방법 |
KR20060073186A (ko) * | 2004-12-24 | 2006-06-28 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
KR100606902B1 (ko) * | 2004-12-24 | 2006-08-01 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조 방법 |
US7456044B2 (en) * | 2005-12-28 | 2008-11-25 | Dongbu Electronics Co., Ltd. | Method for manufacturing image sensor |
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- 2006-12-28 KR KR1020060135935A patent/KR100866675B1/ko active IP Right Grant
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- 2007-10-31 US US11/932,483 patent/US7879640B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050060649A (ko) * | 2003-12-17 | 2005-06-22 | 매그나칩 반도체 유한회사 | 마이크로렌즈를 구비한 이미지센서의 제조방법 |
KR100504563B1 (ko) | 2004-08-24 | 2005-08-01 | 동부아남반도체 주식회사 | 이미지 센서 제조 방법 |
Also Published As
Publication number | Publication date |
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US7879640B2 (en) | 2011-02-01 |
US20080157154A1 (en) | 2008-07-03 |
KR20080061438A (ko) | 2008-07-03 |
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