KR100436303B1 - 유기 이엘소자 및 유기 이엘소자의 제조방법 - Google Patents
유기 이엘소자 및 유기 이엘소자의 제조방법 Download PDFInfo
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- KR100436303B1 KR100436303B1 KR10-2001-7011632A KR20017011632A KR100436303B1 KR 100436303 B1 KR100436303 B1 KR 100436303B1 KR 20017011632 A KR20017011632 A KR 20017011632A KR 100436303 B1 KR100436303 B1 KR 100436303B1
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- Prior art keywords
- layer
- organic
- hole injection
- light emitting
- transport layer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000002347 injection Methods 0.000 claims abstract description 64
- 239000007924 injection Substances 0.000 claims abstract description 64
- 239000000203 mixture Substances 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims description 16
- 239000002904 solvent Substances 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 238000005192 partition Methods 0.000 claims description 3
- 230000002940 repellent Effects 0.000 claims description 3
- 239000005871 repellent Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims 2
- 239000010408 film Substances 0.000 description 29
- 239000000758 substrate Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000009832 plasma treatment Methods 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 150000002220 fluorenes Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229920000285 Polydioctylfluorene Polymers 0.000 description 1
- 125000002490 anilino group Chemical class [H]N(*)C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- -1 polyparaphenylene vinylene Chemical class 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (10)
- 양극과, 적어도 정공주입/수송층 및 발광층이 양극으로부터 이 순서로 적층되어 이루어지는 적층막과, 상기 적층막 위에 형성된 음극을 갖는 화소를 구비하고, 상기 화소 끼리를 격리되도록 개구되어 격벽을 구비하여 이루어지는 유기 EL소자에 있어서,상기 정공 주입/수송층 및 발광층은, 정공주입/수송재료 및 발광재료를 각각 용매로 용해 또는 분산시킨 잉크 조성물로부터 형성되고,상기 격벽은, 적어도 제 1층 및 상기 제 1층 위에 형성된 제 2층을 포함하여 이루어지고,상기 제 2층의 개구 지름이 상기 제 1층의 개구 지름보다 크게 이루어지도록 상기 제 2층과 상기 제 1층과의 사이에 단차가 형성되며,상기 정공주입/수송층과 상기 음극이 접하지 않도록 상기 발광층의 성막영역이 상기 정공주입/수송층의 성막 영역보다 크게 형성되고,상기 정공주입/수송층은, 상기 제 1층의 단부를 덮도록 형성되어 이루어지는 것을 특징으로 하는 유기 이엘 소자.
- 잉크젯방식에 의해 적어도 2층 이상의 적층막을 형성하여 이루어지고, 정공주입/수송층 및 발광층을 포함하는 구조를 갖는 유기 이엘 소자의 제조방법에 있어서,해당 정공주입/수송층을 형성할 때의 잉크 조성물의 토출량을 A, 해당 발광층을 형성할 때의 잉크 조성물의 토출량을 B로 한 경우, A≤B가 되는 관계를 만족시키는 것을 특징으로 하는 유기 이엘 소자의 제조방법.
- 제 2항에 기재된 방법에 의해 제조되는 것을 특징으로 하는 유기 이엘 소자.
- 잉크젯방식에 의해 적어도 2층 이상의 적층막을 형성하여 이루어지고, 정공주입/수송층 및 발광층을 포함하는 구조를 갖는 유기 이엘 소자의 제조방법에 있어서,해당 정공주입/수송층을 형성할 때의 잉크 조성물의 토출량의 합계를 A, 해당 발광층을 형성할 때의 잉크 조성물의 토출량의 합계를 B로 한 경우, A≤B가 되는 관계를 만족시키는 것을 특징으로 하는 유기 이엘 소자의 제조방법.
- 제 4항에 기재된 방법에 의해 제조되는 것을 특징으로 하는 유기 이엘 소자.
- 제 1항에 있어서,상기 제 1층이 SiO2로 이루어지며, 상기 제 2층이 유기막으로 이루어지는 것을 특징으로 하는 유기 이엘 소자.
- 제 6항에 있어서,상기 유기막이 발 잉크성을 갖거나, 또는 상기 유기막에 발 잉크 처리가 시행되어 있는 것을 특징으로 하는 유기 이엘 소자.
- 제 1항에 있어서,상기 적층막은 전자 주입/수송층을 더 포함하는 것을 특징으로 하는 유기 이엘 소자.
- 제 1항에 있어서,상기 양극이 ITO를 포함하며, 상기 음극이 Ca, Mg, Ag, Al 및 Li로부터 선택되는 금속을 포함하는 것을 특징으로 하는 유기 이엘 소자.
- 제 1항에 있어서,상기 양극이 반사성의 금속을 포함하고, 상기 음극이 Ag, Mg의 공증착 재료인 것을 특징으로 하는 유기 이엘 소자.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2000-00098160 | 2000-03-31 | ||
JP2000098160 | 2000-03-31 | ||
PCT/JP2001/002794 WO2001074121A1 (fr) | 2000-03-31 | 2001-03-30 | Dispositif electroluminescent organique et procede de fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020025859A KR20020025859A (ko) | 2002-04-04 |
KR100436303B1 true KR100436303B1 (ko) | 2004-06-19 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR10-2001-7011632A KR100436303B1 (ko) | 2000-03-31 | 2001-03-30 | 유기 이엘소자 및 유기 이엘소자의 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (2) | US6852994B2 (ko) |
KR (1) | KR100436303B1 (ko) |
CN (1) | CN100444698C (ko) |
TW (1) | TW512646B (ko) |
WO (1) | WO2001074121A1 (ko) |
Families Citing this family (37)
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JP3705264B2 (ja) | 2001-12-18 | 2005-10-12 | セイコーエプソン株式会社 | 表示装置及び電子機器 |
JP5304417B2 (ja) * | 2001-12-18 | 2013-10-02 | セイコーエプソン株式会社 | 表示装置 |
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JP4170700B2 (ja) * | 2002-07-31 | 2008-10-22 | 大日本印刷株式会社 | エレクトロルミネッセンス表示装置および製造方法 |
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JP3649125B2 (ja) | 1998-09-17 | 2005-05-18 | セイコーエプソン株式会社 | エレクトロルミネッセンス素子の製造方法、及びエレクトロルミネッセンス素子 |
US6384529B2 (en) * | 1998-11-18 | 2002-05-07 | Eastman Kodak Company | Full color active matrix organic electroluminescent display panel having an integrated shadow mask |
US6114088A (en) * | 1999-01-15 | 2000-09-05 | 3M Innovative Properties Company | Thermal transfer element for forming multilayer devices |
US6372154B1 (en) * | 1999-12-30 | 2002-04-16 | Canon Kabushiki Kaisha | Luminescent ink for printing of organic luminescent devices |
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2001
- 2001-03-30 KR KR10-2001-7011632A patent/KR100436303B1/ko active IP Right Grant
- 2001-03-30 TW TW090107774A patent/TW512646B/zh not_active IP Right Cessation
- 2001-03-30 WO PCT/JP2001/002794 patent/WO2001074121A1/ja active IP Right Grant
- 2001-03-30 CN CNB018007406A patent/CN100444698C/zh not_active Expired - Lifetime
- 2001-03-30 US US09/820,728 patent/US6852994B2/en not_active Expired - Lifetime
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2005
- 2005-01-06 US US11/029,359 patent/US7390693B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1174083A (ja) * | 1997-09-01 | 1999-03-16 | Seiko Epson Corp | 電界発光素子およびその製造方法 |
Also Published As
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WO2001074121A1 (fr) | 2001-10-04 |
US20020067123A1 (en) | 2002-06-06 |
KR20020025859A (ko) | 2002-04-04 |
US20050118328A1 (en) | 2005-06-02 |
CN100444698C (zh) | 2008-12-17 |
US7390693B2 (en) | 2008-06-24 |
CN1366789A (zh) | 2002-08-28 |
TW512646B (en) | 2002-12-01 |
US6852994B2 (en) | 2005-02-08 |
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