KR100434615B1 - 복합 산화물 박막의 제조 방법 및 제조 장치 - Google Patents
복합 산화물 박막의 제조 방법 및 제조 장치 Download PDFInfo
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- KR100434615B1 KR100434615B1 KR10-2001-0045476A KR20010045476A KR100434615B1 KR 100434615 B1 KR100434615 B1 KR 100434615B1 KR 20010045476 A KR20010045476 A KR 20010045476A KR 100434615 B1 KR100434615 B1 KR 100434615B1
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- thin film
- oxide thin
- film
- composite oxide
- pressure
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- 239000010409 thin film Substances 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 title claims description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 239000010408 film Substances 0.000 claims abstract description 92
- 239000002131 composite material Substances 0.000 claims abstract description 67
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 50
- 239000012530 fluid Substances 0.000 claims abstract description 31
- 239000002904 solvent Substances 0.000 claims abstract description 27
- 238000009835 boiling Methods 0.000 claims abstract description 16
- 230000001590 oxidative effect Effects 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 33
- 230000015572 biosynthetic process Effects 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 23
- 230000008021 deposition Effects 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000005507 spraying Methods 0.000 claims description 9
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 8
- 125000005595 acetylacetonate group Chemical group 0.000 claims description 8
- 150000004703 alkoxides Chemical class 0.000 claims description 8
- 229910001882 dioxygen Inorganic materials 0.000 claims description 8
- 230000007246 mechanism Effects 0.000 claims description 7
- 239000002994 raw material Substances 0.000 description 108
- 239000000203 mixture Substances 0.000 description 22
- 238000000151 deposition Methods 0.000 description 17
- 239000007788 liquid Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 12
- 229910004356 Ti Raw Inorganic materials 0.000 description 10
- 238000000354 decomposition reaction Methods 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000008016 vaporization Effects 0.000 description 7
- 239000003985 ceramic capacitor Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 5
- 238000009834 vaporization Methods 0.000 description 5
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 4
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000002003 electrode paste Substances 0.000 description 3
- 239000003446 ligand Substances 0.000 description 3
- 206010021143 Hypoxia Diseases 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 230000000452 restraining effect Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000006199 nebulizer Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- OGHBATFHNDZKSO-UHFFFAOYSA-N propan-2-olate Chemical compound CC(C)[O-] OGHBATFHNDZKSO-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
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- H01G4/002—Details
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Abstract
Description
Ba 원료 | Ba(DPM)2 |
Sr 원료 | Sr(DPM)2 |
Ti 원료 | Ti(O-i-C3H7)2(DPM)2 |
용매 | butoxyethanol |
Ba : Sr : Ti의 원료 몰비 | 70 : 30 : 100 |
용액 농도 | 0.03 mol/l |
O2가스 유량 | 5LM |
성막 온도 | 550℃ |
성막 체임버 압력 | 12 Torr |
성막 시간 | 20분 |
정전 용량 | tanδ | 1V에서의 누설 전류 | 파괴 전압 |
3490 pF | 1.9 % | 350 pA | 9.2 V |
정전 용량 | tanδ | 1V에서의 누설 전류 | 파괴 전압 |
4220 pF | 2.3 % | 5.0 pA | 11.7 V |
Ba 원료 | Ba(acac)2ㆍ2H2O |
Sr 원료 | Sr(acac)2ㆍ2H2O |
Ti 원료 | TiO(acac)2 |
용매 | methoxyethanol |
Ba : Sr : Ti의 원료 몰비 | 85 : 30 : 100 |
용액 농도 | 0.005 mol/l |
O2가스 유량 | 10 LM |
성막 온도 | 550℃ |
성막 체임버 압력 | 22 Torr |
성막 시간 | 3분 ×6 |
정전 용량 | tanδ | 1V에서의 누설 전류 | 파괴 전압 |
6600 pF | 2.0 % | 11 pA | 9.9 V |
Ba 원료 | Ba(i-OC3H7)2 |
Sr 원료 | Sr(i-OC3H7)2 |
Ti 원료 | Ti(i-OC3H7)4 |
용매 | methoxyethanol+ 0.01mol% acetylacetone |
Ba : Sr : Ti의 원료 몰비 | 80 : 30 : 100 |
용액 농도 | 0.005 mol/l |
O2가스 유량 | 10 LM |
성막 온도 | 550℃ |
성막 체임버 압력 | 22 Torr |
성막 시간 | 3분 ×5 |
정전 용량 | tanδ | 1V에서의 누설 전류 | 파괴 전압 |
6120 pF | 1.5 % | 8.5 pA | 11.3 V |
Claims (21)
- 복합 산화물 박막의 제조 방법에 있어서,(a) 적어도 두가지의 금속 화합물을 용매에 용해하여 금속 화합물 용액을 준비하는 단계;(b) 압력이 100Torr 이하인 성막 체임버의 내부에 배치된 기판을 성막 온도까지 가열하는 단계; 및(c) 상기 기판을 가열한 다음, 상기 금속 화합물 용액을 상기 성막 체임버 안에 분무하는 단계를 포함하는 복합 산화물 박막의 제조 방법.
- 제1항에 있어서, 상기 용액은 산화성 기체와 함께 2-유체 노즐에서 분무화되는 것을 특징으로 하는 복합 산화물 박막의 제조 방법.
- 제2항에 있어서, 상기 용매는 상압에서 적어도 약 100℃ 이상의 끓는점을 가지는 것을 특징으로 하는 복합 산화물 박막의 제조 방법.
- 제3항에 있어서, 상기 금속 화합물 중 적어도 하나는 디피발로일메타나토 착체인 것을 특징으로 하는 복합 산화물 박막의 제조 방법.
- 제4항에 있어서, 상기 금속 화합물 중 적어도 하나는 아세틸아세토나토 착체인 것을 특징으로 하는 복합 산화물 박막의 제조 방법.
- 제5항에 있어서, 상기 용액은 세가지의 금속 화합물을 포함하고, 상기 금속 화합물 중 적어도 하나는 금속 알콕사이드인 것을 특징으로 하는 복합 산화물 박막의 제조 방법.
- 제6항에 있어서, 성막(c)은 적어도 두차례 행해지고, 각각의 성막 후에, 성막에 사용한 압력보다 낮은 압력하에서 상기 막을 열처리하는 것을 특징으로 하는 복합 산화물 박막의 제조 방법.
- 제7항에 있어서, 적어도 최종 성막 후에, 얻어진 상기 막을 성막시의 산소 기체의 분압보다 높은 산소 기체 분압에서 열처리하는 것을 특징으로 하는 복합 산화물 박막의 제조 방법.
- 제1항에 있어서, 상기 용매는 상압에서 적어도 약 100℃ 이상의 끓는점을 가지는 것을 특징으로 하는 복합 산화물 박막의 제조 방법.
- 제1항에 있어서, 상기 금속 화합물 중 적어도 하나는 디피발로일메타나토 착체인 것을 특징으로 하는 복합 산화물 박막의 제조 방법.
- 제1항에 있어서, 상기 금속 화합물 중 적어도 하나는 아세틸아세토나토 착체인 것을 특징으로 하는 복합 산화물 박막의 제조 방법.
- 제1항에 있어서, 상기 금속 화합물 중 적어도 하나는 금속 알콕사이드인 것을 특징으로 하는 복합 산화물 박막의 제조 방법.
- 제1항에 있어서, 성막이 적어도 두차례 행해지고, 각각의 성막 후에, 성막에 사용한 압력보다 낮은 압력하에서 상기 막을 열처리하는 것을 특징으로 하는 복합 산화물 박막의 제조 방법.
- 제1항에 있어서, 적어도 최종 성막 후에, 얻어진 상기 막을 성막시의 산소 기체의 분압보다 높은 산소 기체 분압에서 열처리하는 것을 특징으로 하는 복합 산화물 박막의 제조 방법.
- 제1항의 복합 산화물 박막의 제조 방법의 실시에 사용하는 박막 제조 장치에 있어서,금속 화합물 용액 공급 기구;상기 용액 공급 기구와 연결되고 상기 금속 화합물 용액을 분무 상태로 만들기 위해 사용되는 2-유체 노즐;상기 노즐과 연결된 성막 체임버;상기 체임버에 연결된 기판 가열기; 및상기 체임버에 연결되고, 상기 성막 체임버 내의 압력을 100 Torr 이하로 감압하기 위해 사용되는 감압 펌프를 포함하는 복합 산화물 박막의 제조 장치.
- 제15항에 있어서, 상기 2-유체 노즐은 중심이 일치되게 배치된 한 쌍의 관(tube)을 포함하는 것을 특징으로 하는 복합 산화물 박막의 제조 장치.
- 제16항에 있어서, 상기 2-유체 노즐에 연결된 가스 공급 기구를 더 포함하는 것을 특징으로 하는 복합 산화물 박막의 제조 장치.
- 제15항에 있어서, 상기 2-유체 노즐에 연결된 가스 공급 기구를 더 포함하는 것을 특징으로 하는 복합 산화물 박막의 제조 장치.
- 삭제
- 제1항에 있어서, 2-유체 노즐로 상기 금속 화합물 용액을 분무하는 것을 특징으로 하는 복합 산화물 박막의 제조 방법.
- 삭제
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JP4110952B2 (ja) | 2002-01-16 | 2008-07-02 | 株式会社村田製作所 | 誘電体薄膜の形成方法 |
KR100984172B1 (ko) | 2008-11-03 | 2010-09-28 | 엘아이지에이디피 주식회사 | 합금분리막 제조장치 및 제조방법 |
JP6618459B2 (ja) * | 2016-12-26 | 2019-12-11 | 東芝三菱電機産業システム株式会社 | 薄膜製造装置及び薄膜製造方法 |
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JPS5711834A (en) * | 1980-06-25 | 1982-01-21 | Matsushita Electric Ind Co Ltd | Preparation of thin oxide magnetic film |
JPH0576838A (ja) * | 1991-09-20 | 1993-03-30 | Nippon Sheet Glass Co Ltd | 二酸化ケイ素膜の形成方法 |
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US5456945A (en) * | 1988-12-27 | 1995-10-10 | Symetrix Corporation | Method and apparatus for material deposition |
JPH02258691A (ja) * | 1989-03-31 | 1990-10-19 | Agency Of Ind Science & Technol | 透明導電膜の製造方法 |
CN1056459C (zh) * | 1995-03-28 | 2000-09-13 | 松下电器产业株式会社 | 金属氧化物薄膜电阻器 |
KR100418164B1 (ko) * | 1995-07-31 | 2004-03-19 | 미쓰비시 마테리알 가부시키가이샤 | 고순도 티탄착체 및 그의 제조방법과 티탄산 바륨 스트론튬막 형성용 액체조성물 |
JP3612839B2 (ja) | 1996-02-13 | 2005-01-19 | 三菱電機株式会社 | 高誘電率薄膜構造、高誘電率薄膜形成方法および高誘電率薄膜形成装置 |
US6143063A (en) * | 1996-03-04 | 2000-11-07 | Symetrix Corporation | Misted precursor deposition apparatus and method with improved mist and mist flow |
US6116184A (en) * | 1996-05-21 | 2000-09-12 | Symetrix Corporation | Method and apparatus for misted liquid source deposition of thin film with reduced mist particle size |
US5741554A (en) * | 1996-07-26 | 1998-04-21 | Bio Dot, Inc. | Method of dispensing a liquid reagent |
US5916640A (en) * | 1996-09-06 | 1999-06-29 | Msp Corporation | Method and apparatus for controlled particle deposition on surfaces |
JP2000036244A (ja) * | 1998-07-16 | 2000-02-02 | Matsushita Electric Ind Co Ltd | プラズマディスプレイパネルの製造方法 |
US6048766A (en) * | 1998-10-14 | 2000-04-11 | Advanced Micro Devices | Flash memory device having high permittivity stacked dielectric and fabrication thereof |
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JPS5711834A (en) * | 1980-06-25 | 1982-01-21 | Matsushita Electric Ind Co Ltd | Preparation of thin oxide magnetic film |
JPH0576838A (ja) * | 1991-09-20 | 1993-03-30 | Nippon Sheet Glass Co Ltd | 二酸化ケイ素膜の形成方法 |
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US20020076485A1 (en) | 2002-06-20 |
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