KR100371161B1 - Fabricating method of field emission device - Google Patents
Fabricating method of field emission device Download PDFInfo
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- KR100371161B1 KR100371161B1 KR10-1999-0058952A KR19990058952A KR100371161B1 KR 100371161 B1 KR100371161 B1 KR 100371161B1 KR 19990058952 A KR19990058952 A KR 19990058952A KR 100371161 B1 KR100371161 B1 KR 100371161B1
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- transition metal
- field emission
- metal layer
- emission device
- carbon nanotubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
Abstract
본 발명은 전계방출소자의 제조방법에 관한 것으로, 종래 탄소 나노튜브를 이용한 전계방출소자의 제조방법은 탄소 나노튜브의 성장온도인600[℃] 이상으로 기판전체를 가열하기때문에 열변형 온도가 510[℃] 이하인 통상의 소다라임 유리기판을 적용하지 못하는 문제점이 있었다. 따라서, 본 발명은 유리기판 상에 하부전극, 저항층, 절연막 및 게이트층을 순차적으로 형성하고, 사진식각을 통해 게이트층 및 절연막의 일부를 식각하여 홀을 형성한 다음 홀 바닥의 저항층 상부에 촉매전이금속층을 형성하는 공정과; 상기 유리기판을 100∼500[℃]의 낮은 온도로 유지하고, 선택적으로 상기 촉매전이금속층만을 외부 에너지원을 통해탄소 나노튜브 성장온도 600[℃]이상으로가열함으로써, 그 촉매전이금속층 상부에 선택적으로 탄소 나노튜브를 형성하는 공정으로 이루어지는 전계방출소자의 제조방법을 통해 기판을 낮은 온도로 유지하면서,촉매전이금속층의높은 온도로 양질의 탄소 나노튜브를 성장시킬 수 있게 되어 전계방출형 표시소자에 보편적으로 사용되는 유리기판을 적용할 수 있는 효과가 있으며, 낮은 온도에서 탄소 나노튜브의 성장을 제어할 수 있게 되어 구조재료나 수소저장재료 또는 반도체소자의 응용에 있어 다양한 효과를 기대할 수 있다.The present invention relates to a method for manufacturing a field emission device, the conventional method for manufacturing a field emission device using carbon nanotubes because the heat distortion temperature is 510 because the entire substrate is heated to 600 [° C] or more , the growth temperature of the carbon nanotubes. There was a problem that the conventional soda-lime glass substrate which is [° C] or less cannot be applied. Therefore, the present invention sequentially forms a lower electrode, a resistive layer, an insulating film and a gate layer on the glass substrate, and forms a hole by etching a portion of the gate layer and the insulating film through photolithography, and then on the upper resistive layer of the hole bottom. Forming a catalyst transition metal layer; The glass substrate is maintained at a low temperature of 100 to 500 [deg.] C., and optionally, only the catalyst transition metal layer is heated to a carbon nanotube growth temperature of 600 [deg.] C. or higher through an external energy source, thereby overlying the catalyst transition metal layer. Through the method of manufacturing a field emission device, which selectively forms carbon nanotubes, it is possible to grow high quality carbon nanotubes at a high temperature of the catalyst transition metal layer while maintaining the substrate at a low temperature. There is an effect that can be applied to the glass substrate commonly used in the, and can control the growth of the carbon nanotubes at low temperature can be expected a variety of effects in the application of structural materials, hydrogen storage materials or semiconductor devices.
Description
본 발명은 전계방출소자의 제조방법에 관한 것으로, 특히 전계방출 팁(tip)으로 적용되는 탄소 나노튜브를기판의 온도를저온으로 유지시킨 상태에서 성장시키기에 적당하도록 한 전계방출소자의 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a method of manufacturing a field emission device, and more particularly, to a method of manufacturing a field emission device in which carbon nanotubes applied as field emission tips are suitable for growing under a state in which a temperature of a substrate is kept at a low temperature . It is about.
최근 들어 탄소 나노튜브가 기계적으로 강하고, 화학적으로 상당히 안정하여 비교적 낮은 진공도에서 전자방출특성이 우수한 이유로 인해 이를 이용한 전계방출소자의 중요성이 인식되고 있다. 이와같은 탄소 나노튜브는 작은 직경(약, 1.0∼ 수십[nm])을 갖기 때문에 종래의 spindt형 전계방출 팁에 비해 전계강화효과(field enhancement factor)가 상당히 우수하여 전자방출이 낮은 임계 전계(turn-on field, 약 1∼5[V/㎛])에서 이루어질 수 있게 되므로, 전력손실 및 생산단가를 줄일 수 있는 장점이 있다. 종래 전계방출소자의 제조방법을 첨부한 도면을 참조하여 상세히 설명하면 다음과 같다.Recently, the importance of field emission devices using carbon nanotubes has been recognized because of their strong mechanical and chemical stability and excellent electron emission characteristics at relatively low vacuum. Since such carbon nanotubes have a small diameter (about 1.0 to several tens of nanometers), the field enhancement factor is considerably superior to conventional spindt field emission tips, so that the electron emission has a low critical field (turn). -on field, since it can be made in about 1 to 5 [V / ㎛]), there is an advantage that can reduce the power loss and production cost. Referring to the accompanying drawings, a conventional method for manufacturing a field emission device is as follows.
먼저, 도1은 종래 spindt형 3전극 전계방출소자를 보인 단면도로서, 그 제조방법은 유리기판(1) 상부에 순차적으로 하부전극(2), 저항층(3), 절연층(4) 및 게이트층(5)을 형성하고, 사진식각을 통해 게이트층(5) 및 절연층(4) 일부를 식각하여 홀을 형성한 다음 전자빔증착 방법을 통해 희생층(미도시)과 에미터막을 형성하고, 선택적 식각을 실시하여 예리한 에미터 팁(6)을 형성한다.First, Figure 1 is a cross-sectional view showing a conventional spindt type three-electrode field emission device, the manufacturing method of the lower electrode 2, the resistive layer (3), the insulating layer (4) and the gate sequentially on the glass substrate (1) A layer 5 is formed, and a portion of the gate layer 5 and the insulating layer 4 are etched through photolithography to form a hole, and then a sacrificial layer (not shown) and an emitter layer are formed by an electron beam deposition method. Selective etching is performed to form a sharp emitter tip 6.
그러나, 상기한 바와같은 spindt형 3전극 전계방출소자는 일정한 형태와 크기를 갖는 에미터 팁(6)을 형성시키기에 공정상의 어려움이 있고, 이는 대면적의 소자에 적용되는 경우에는 더욱 심각해진다. 또한, 에미터 팁(6)의 반경이 탄소 나노튜브에 비해 크기 때문에 임계 전계가 약 10[V/㎛] 정도로, 전력손실 및 생산단가 측면에서 탄소 나노튜브에 비해 불리한 단점이 있다.However, the spindt type three-electrode field emission device as described above has a difficulty in forming an emitter tip 6 having a constant shape and size, which becomes more serious when applied to a large-area device. In addition, since the radius of the emitter tip 6 is larger than that of the carbon nanotubes, the critical electric field is about 10 [V / μm], which is disadvantageous compared to the carbon nanotubes in terms of power loss and production cost.
한편, 도2는 종래 탄소 나노튜브를 이용한 3전극 전계방출소자의 단면도로서, 이에 도시한 바와같이 실리콘기판(11) 상부에 순차적으로 하부전극(12), 저항층(13), 절연층(14) 및 게이트층(15)을 형성하고, 사진식각을 통해상기게이트층(15) 및 절연층(14) 일부를 식각하여 홀을 형성한 다음 증착(evaporation)을 통해 홀 바닥의 저항층(13) 상부에 촉매전이금속층(16)을 형성하고,상기실리콘기판(11) 전체를탄소 나노튜브의 성장온도 600[℃] 이상인600∼900[℃] 정도의 온도범위로 가열하고탄화수소(hydrocarbon) 가스를 이용한 열(thermal) 화학기상증착 또는 플라즈마(plasma) 화학기상증착 방법을 통해상기촉매전이금속층(16) 상부에만 선택적으로 탄소 나노튜브(17)를 형성한다.2 is a cross-sectional view of a three-electrode field emission device using a conventional carbon nanotube, and as shown therein, the lower electrode 12, the resistance layer 13, and the insulating layer 14 are sequentially disposed on the silicon substrate 11. ) And the gate layer 15, and a portion of the gate layer 15 and the insulating layer 14 are etched through photolithography to form a hole, and then the resist layer 13 at the bottom of the hole through evaporation. A catalyst transition metal layer 16 is formed on the upper portion, and the entire silicon substrate 11 is heated to a temperature range of about 600 to 900 [° C.], which is at least 600 [° C.] to a growth temperature of carbon nanotubes , and a hydrocarbon gas. Carbon nanotubes 17 are selectively formed only on the catalyst transition metal layer 16 through thermal chemical vapor deposition or plasma chemical vapor deposition.
이때, 상기 탄소 나노튜브(17)를 형성하기 위한 다른 방법으로는 600[℃] 이상의 온도에서 아크 방전법이나 레이저 박리(ablation) 방법을 적용할 수 있으며, 탄소 나노튜브(17)는 촉매전이금속층(16) 상부에만 선택적으로 형성되므로, 촉매전이금속층(16)의 면적이 클수록 탄소 나노튜브(17)의 면적도 커진다.In this case, as another method for forming the carbon nanotubes 17, an arc discharge method or a laser ablation method may be applied at a temperature of 600 [° C] or higher, and the carbon nanotubes 17 may be a catalyst transition metal layer. (16) Since it is selectively formed only in the upper portion, the larger the area of the catalyst transition metal layer 16, the larger the area of the carbon nanotubes (17).
그러나, 상기한 바와같은 종래 전계방출소자의 제조방법은 탄소 나노튜브의 성장온도인600[℃] 이상으로 기판전체를 가열하기때문에 열변형 온도가 510[℃] 이하인 통상의 소다라임(soda lime) 유리기판을 적용하지 못하는 문제점이 있었다.However, the conventional method of manufacturing a field emission device as described above is a conventional soda lime having a heat distortion temperature of 510 [° C. or less] because the entire substrate is heated to 600 [° C.] or more , which is the growth temperature of carbon nanotubes. There was a problem that the glass substrate can not be applied.
본 발명은 상기한 바와같은 종래의 문제점을 해결하기 위하여 창안한 것으로, 본 발명의 목적은 평판표시소자(flat panel display)에서 통상적으로 적용되는 소다라임 유리기판을 그의 열변형온도 이하인 저온으로 유지시킨 상태에서 촉매전이 금속층만을 탄소 나노튜브 성장온도 이상으로 가열하여탄소 나노튜브를 성장시킬 수 있는 전계방출소자의 제조방법을 제공하는데 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the conventional problems as described above, and an object of the present invention is to maintain a soda-lime glass substrate which is commonly applied in a flat panel display at a low temperature below its thermal deformation temperature. The present invention provides a method of manufacturing a field emission device capable of growing carbon nanotubes by heating only a catalyst transition metal layer at a carbon nanotube growth temperature or higher in a state.
도1은 종래 spindt형 3전극 전계방출소자를 보인 단면도.1 is a cross-sectional view showing a conventional spindt type three-electrode field emission device.
도2는 종래 탄소 나노튜브를 이용한 3전극 전계방출소자를 보인 단면도.Figure 2 is a cross-sectional view showing a three-electrode field emission device using conventional carbon nanotubes.
도3은 본 발명의 일 실시예를 보인 단면도.Figure 3 is a cross-sectional view showing an embodiment of the present invention.
도4는 본 발명의 다른 실시예를 보인 단면도.Figure 4 is a cross-sectional view showing another embodiment of the present invention.
도5는 본 발명의 또 다른 실시예를 보인 단면도.Figure 5 is a cross-sectional view showing another embodiment of the present invention.
***도면의 주요부분에 대한 부호의 설명****** Explanation of symbols for main parts of drawing ***
21:유리기판 22:하부전극21: glass substrate 22: lower electrode
23:저항층 24:절연막23: resistive layer 24: insulating film
25:게이트층 26:촉매전이금속층25: gate layer 26: catalyst transition metal layer
27:세라믹절연체 28:전도성코일27: ceramic insulator 28: conductive coil
29:탄소 나노튜브29: carbon nanotube
상기한 바와같은 본 발명의 목적을 달성하기 위한 전계방출소자의 제조방법은 유리기판 상에 하부전극, 저항층, 절연막 및 게이트층을 순차적으로 형성하고, 사진식각을 통해 상기 게이트층 및 절연막 일부를 식각하여 홀을 형성한 다음 그 홀 바닥의 저항층 상부에 촉매전이금속층을 형성하는 공정과; 상기 유리기판을그의 열변형온도 이하인100∼500[℃]의 낮은 온도로 유지하고, 선택적으로 상기 촉매전이금속층만을 외부 에너지원을 통해탄소나노튜브 성장온도 600[℃] 이상으로가열함으로써, 그 촉매전이금속층 상부에 선택적으로 탄소 나노튜브를 형성하는 공정을 구비하여 이루어지는 것을 특징으로 한다.The method of manufacturing a field emission device for achieving the object of the present invention as described above is to sequentially form a lower electrode, a resistive layer, an insulating film and a gate layer on a glass substrate, and to form a portion of the gate layer and insulating film through photolithography. Etching to form a hole, and then forming a catalyst transition metal layer on top of the resistive layer at the bottom of the hole; The glass substrate is kept at a low temperature of 100 to 500 [deg.] C. below its heat distortion temperature , and optionally by heating only the catalyst transition metal layer to a carbon nanotube growth temperature of 600 [deg.] C. or higher through an external energy source. And a step of selectively forming carbon nanotubes on the catalyst transition metal layer.
상기한 바와같은 본 발명에 의한 전계방출소자 제조방법의 실시예들을 첨부한 도3 내지 도5의 단면도를 참조하여 상세히 설명하면 다음과 같다.When described in detail with reference to the cross-sectional view of Figures 3 to 5 attached to the embodiments of the field emission device manufacturing method according to the present invention as described above.
먼저, 도3은 본 발명의 일 실시예를 보인 단면도로서, 이에 도시한 바와같이 유리기판(21) 상에 하부전극(22), 저항층(23), 절연막(24) 및 게이트층(25)을 순차적으로 형성하고, 사진식각을 통해 상기 게이트층(25) 및 절연막(24) 일부를 식각하여 홀을 형성한 다음 그 홀 바닥의 저항층(23) 상부에 촉매전이금속층(26)을 형성한다.First, Figure 3 is a cross-sectional view showing an embodiment of the present invention, as shown in the lower electrode 22, the resistive layer 23, the insulating film 24 and the gate layer 25 on the glass substrate 21 Are sequentially formed, and a portion of the gate layer 25 and the insulating layer 24 are etched through photolithography to form holes, and then a catalyst transition metal layer 26 is formed on the resistance layer 23 at the bottom of the hole. .
상기와 같이 만들어진 소자를 세라믹절연체(27) 위에 위치시키고, 그 세라믹절연체(27)의 하부면에는 나선형으로 감긴 전도성코일(28)을 위치시킨다.The device made as described above is positioned on the ceramic insulator 27, and the conductive coil 28 wound in a spiral is placed on the lower surface of the ceramic insulator 27.
그리고, CXHY, C2H2, C2H4, CH4및 C2H6, 또는 COX등과 같은 탄소 함유가스와 Ar 또는 He 등과 같은 불활성가스 또는 질소가스를 혼합하여 열 화학기상증착법이나 플라즈마 화학기상증착법을 통해상기 촉매전이 금속층(26)의 상부에탄소 나노튜브(29)를 형성하되, 유리기판(21)은그의 열변형 온도 510[℃] 보다 낮은100∼500[℃] 정도의온도를 유지하면서, 상기 전도성코일(28)에 고주파(radio frequency : RF) 또는 마이크로파(microwave)의 주파수를 수메가[MHz]∼수기가[GHz] 정도 인가하여 상기 촉매전이금속층(26)에만와전류(eddy current)에 의한 발열이 선택적으로 일어나도록 함으로써,그 촉매전이 금속층(26)은 탄소나노튜브(29)의 성장온도 600[℃] 이상인 600~900[℃]의 온도로 가열되고, 이에따라 그국부적으로 가열된 촉매전이금속층(26)의상부에상기와 같은 증착법에 의해 탄소나노튜브(29)가 성장 형성된다. 이때 상기 유리기판(21)은 그의 열변형 온도보다 낮은 온도를 유지하게 되어, 열변형이 일어나지 않으므로, 상기 촉매 전이 금속층(26)의 상부에는 탄소나노튜브(29)가 정상적으로 균일하게 성장된다. In addition, by mixing a carbon-containing gas such as C X H Y , C 2 H 2 , C 2 H 4 , CH 4 and C 2 H 6 , or CO X and an inert gas or nitrogen gas such as Ar or He, Carbon nanotubes 29 are formed on the catalyst transfer metal layer 26 by vapor deposition or plasma chemical vapor deposition. The glass substrate 21 has a temperature of 100 to 500 [° C.] lower than its thermal deformation temperature of 510 [° C.]. while maintaining the temperature of the high-frequency to the conductive coil (28) (radio frequency: RF) or microwave (microwave) frequencies to be Mega [MHz] ~ number group [GHz] is the catalyst transition metal layer 26 to the degree of only by making the heating is optional up to by the eddy current (eddy current) to, the catalytic transition metal layer 26 is heated to a temperature of the growth temperature of carbon nanotubes (29) 600 [℃] less than 600 ~ 900 [℃] , yiettara equal to the the upper part of the catalytic transition metal layer 26 is heated by the local The carbon nanotubes 29 are formed by vapor deposition growth. In this case, since the glass substrate 21 maintains a temperature lower than its thermal deformation temperature, and thermal deformation does not occur, the carbon nanotubes 29 are normally uniformly grown on the catalyst transition metal layer 26.
한편, 도4는 본 발명의 다른 실시예를 보인 단면도로서, 이에 도시한 바와같이 상기 도3의 공정진행을 통해 촉매전이금속층(26)을 형성한 다음 유리기판(21)은그의 열변형 온도 510[℃]보다 낮은100∼500[℃] 정도의온도를 유지하면서, 상기 세라믹절연체(27)와 전도성코일(28) 대신에 외부 에너지원으로 자외선 램프(ultraviolet : UV lamp, 31) 또는 레이저(laser)등과 같은 광에너지를 조사하여 상기 촉매전이금속층(26) 뿐만 아니라 탄소원자에도 에너지를 전달함으로써,그 촉매 전이 금속층(26)이 탄소 나노튜브(29)의 성장온도 이상으로 가열됨과 아울러탄소의 이동을 원할하게 하여 탄소 나노튜브(32)를형성한다.이때 상기 유리기판(21)은 그의 열변형 온도보다 낮은 온도를 유지하게 되어, 열변형이 일어나지 않으므로, 상기 촉매전이 금속층(26)의 상부에는 탄소 나노튜브(29)가 정상적으로 균일하게 성장된다. Meanwhile, FIG. 4 is a cross-sectional view showing another embodiment of the present invention. As shown in FIG. 3, the catalyst transition metal layer 26 is formed through the process of FIG. 3, and then the glass substrate 21 has a heat deflection temperature of 510. An ultraviolet lamp (UV lamp, 31) or a laser (laser) as an external energy source instead of the ceramic insulator 27 and the conductive coil 28, while maintaining a temperature of about 100 to 500 [° C] lower than [° C]. By irradiating light energy such as) to transfer energy not only to the catalyst transition metal layer 26 but also to carbon atoms, the catalyst transition metal layer 26 is heated above the growth temperature of the carbon nanotubes 29 and the carbon moves. The carbon nanotubes 32 are formed by smoothing them. In this case, since the glass substrate 21 maintains a temperature lower than its thermal deformation temperature, and thermal deformation does not occur, the carbon nanotubes 29 are normally uniformly grown on the catalyst transition metal layer 26.
그리고, 도5는 본 발명의 또 다른 실시예를 보인 단면도로서, 이에 도시한 바와같이 유리기판(41) 상에 하부전극(42), 저항층(43), 금속층(44), 절연막(45) 및 게이트층(46)을 순차적으로 형성하고, 사진식각을 통해 상기 게이트층(46), 절연막(45) 및 금속층(44) 일부를 식각하여 홀을 형성한 다음 그 홀 바닥의 저항층(43) 상부에 촉매전이금속층(47)을 형성한다.5 is a cross-sectional view showing still another embodiment of the present invention. As shown therein, the lower electrode 42, the resistive layer 43, the metal layer 44, and the insulating film 45 are formed on the glass substrate 41. As shown in FIG. And sequentially forming the gate layer 46, etching a portion of the gate layer 46, the insulating layer 45, and the metal layer 44 through photolithography to form holes, and then forming a resistance layer 43 at the bottom of the hole. The catalyst transition metal layer 47 is formed thereon.
이때, 상기 하부전극(42)의 양 측면에는 전도콘택(48)이 형성되며, 상기 금속층(44)의 두께 또는 저항값 조절을 통해상기촉매전이금속층(47) 형성영역의 저항값을 증가시킨다.In this case, conductive contacts 48 are formed on both side surfaces of the lower electrode 42, and the resistance value of the catalyst transition metal layer 47 formation region is increased by controlling the thickness or resistance value of the metal layer 44.
그리고, CXHY, C2H2, C2H4, CH4및 C2H6, 또는 COX등과 같은 탄소 함유가스와 Ar 또는 He 등과 같은 불활성가스 또는 질소가스를 혼합하여 열 화학기상증착법이나 플라즈마 화학기상증착법을 통해상기 촉매전이 금속층(47)의 상부에탄소 나노튜브(49)를 형성하되,상기유리기판(41)은 100∼500[℃] 정도로 낮게 온도를 유지하면서, 상기 전도콘택(48)을 통해 하부전극(42)에 직류전압(direct voltage : DC)을 인가하여 상기 저항값이 증가된 촉매전이금속층(47)에 줄(Joule) 발열이 선택적으로 일어나도록 함으로써,그 촉매전이 금속층(47)은 탄소 나노튜브(49)의 성장온도 600[℃] 이상인 600~900[℃]의 온도로 가열되고, 이에따라 그국부적으로 가열된 촉매전이금속층(47) 상부에상기와 같은 증착법에 의해 탄소 나노튜브(49)가 성장 형성된다. 이때 상기 유리기판(41)은 그의 열변형 온도보다 낮은 온도를 유지하게 되어 열변형이 일어나지 않으므로, 상기 촉매전이 금속층(47)의 상부에는 탄소 나노튜브(49)가 정상적으로 균일하게 성장된다. In addition, by mixing a carbon-containing gas such as C X H Y , C 2 H 2 , C 2 H 4 , CH 4 and C 2 H 6 , or CO X and an inert gas or nitrogen gas such as Ar or He, Carbon nanotubes 49 are formed on the catalyst transition metal layer 47 by vapor deposition or plasma chemical vapor deposition, but the glass substrate 41 maintains the temperature as low as 100 to 500 [° C.]. By applying a direct voltage (DC) to the lower electrode 42 through the contact 48 to selectively generate Joule heat generation in the catalyst transition metal layer 47 having the increased resistance, the catalyst The transition metal layer 47 is heated to a temperature of 600 to 900 [deg.] C., which is at least 600 [deg.] C. of the growth temperature of the carbon nanotubes 49, and accordingly the deposition method as described above on the locally heated catalyst transition metal layer 47. As a result, carbon nanotubes 49 are grown and formed. At this time, since the glass substrate 41 maintains a temperature lower than its thermal deformation temperature, thermal deformation does not occur, and thus the carbon nanotubes 49 are normally uniformly grown on the catalyst transition metal layer 47.
여기서, 상기촉매전이금속층(47)으로는 철(Fe), 니켈(Ni) 또는 코발트(Co)를 적용하는 것이 바람직하다. Here, it is preferable to apply iron (Fe), nickel (Ni) or cobalt (Co) as the catalyst transition metal layer 47.
상기한 바와같은 본 발명에 의한 전계방출소자의 제조방법은 기판을그의 열변형온도보다낮은 온도로 유지하면서,촉매전이금속층의 국부적 가열에 의해탄소 나노튜브의 성장온도 이상으로 그 촉매전이 금속층의 온도를 높여 균일한탄소 나노튜브를 성장시킬 수 있게 되므로,전계방출형 표시소자에 보편적으로 사용되는 유리기판을 적용할 수 있는 효과가 있으며,기판의 온도가낮은상태에서 탄소 나노튜브의 성장을 제어할 수 있게 되어 구조재료나 수소저장재료 또는 반도체소자의 응용에 있어 다양한 효과를 기대할 수 있다.In the method of manufacturing a field emission device according to the present invention as described above, the temperature of the catalyst transition metal layer is higher than the growth temperature of the carbon nanotubes by the local heating of the catalyst transition metal layer, while maintaining the substrate at a temperature lower than its thermal deformation temperature. to increase, so being able to uniform carbon nanotubes can be grown, and the effect that can be applied to the glass substrate which is commonly used in the field emission display device, controlling the growth of carbon nanotubes at a temperature of the substrate is low As a result, various effects can be expected in the application of structural materials, hydrogen storage materials or semiconductor devices.
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| KR20000023347A (en) * | 1998-09-21 | 2000-04-25 | 루센트 테크놀러지스 인크 | Device comprising carbon nanotube field emitter structure and process for forming device |
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