KR0139735B1 - Thin film field emitting device and the fabrication method thereof - Google Patents
Thin film field emitting device and the fabrication method thereofInfo
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- KR0139735B1 KR0139735B1 KR1019940017890A KR19940017890A KR0139735B1 KR 0139735 B1 KR0139735 B1 KR 0139735B1 KR 1019940017890 A KR1019940017890 A KR 1019940017890A KR 19940017890 A KR19940017890 A KR 19940017890A KR 0139735 B1 KR0139735 B1 KR 0139735B1
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- light emitting
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- srs
- electroluminescent device
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/06—Electrode terminals
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/20—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
Abstract
본 발명은 박막 전계발광소자 및 그의 제조방법에 관한 것으로, 종래의 박막 전계발광소자에서는 백색광 전계발광소자를 SrS:Ce와 ZnS:Mn의 형광체를 적층으로 형성하여 구성하는 경우에는 파장영역이 비록 청색에서 적색까지의 광이 나오지만 적색의 휘도가 상대적으로 높기 때문에 휘도밸런스를 맞추기가 곤란하며, 또한 휘도를 높이기 위해 발광층의 두께를 증가시키게 되면 구동전압이 높아지는 문제점이 있었다.The present invention relates to a thin film electroluminescent device and a method of manufacturing the same. In the conventional thin film electroluminescent device, when the white light electroluminescent device is formed by stacking phosphors of SrS: Ce and ZnS: Mn, the wavelength region is blue. Although the light is emitted from the red to the red, the luminance of the red is relatively high, so it is difficult to match the luminance balance, and when the thickness of the light emitting layer is increased to increase the luminance, the driving voltage increases.
따라서 본 발명은 이러한 문제점을 해결하기 위하여 SrS:Ce, k와 ZnS:Mn, Tb형광체를 일정비율로 혼합한 단층의 발광층을 형성하거나 SrS:Ce, k와 ZnS:Mn, Tb형광체를 다층으로 적층한 발광층을 형성하여 발광휘도의 균형을 맞출 수 있도록 한 박막 전계발광소자를 제공하는 것을 목적으로 한다.Therefore, in order to solve this problem, the present invention forms a single emission layer in which SrS: Ce, k and ZnS: Mn and Tb phosphors are mixed at a constant ratio, or SrS: Ce, k and ZnS: Mn and Tb phosphors are laminated in multiple layers. It is an object of the present invention to provide a thin film electroluminescent device capable of forming a light emitting layer to balance light emission luminance.
Description
제 1 도는 종래 박막 전계발광소자의 단면구조도.1 is a cross-sectional structure diagram of a conventional thin film electroluminescent device.
제 2 도는 종래 박막 전계발광소자의 스펙트럼.2 is a spectrum of a conventional thin film electroluminescent device.
제 3 도는 본 발명 박막 전계발광소자의 단면구조도.3 is a cross-sectional structure diagram of the thin film electroluminescent device of the present invention.
제 4 도는 본 발명 박막 전계발광소자의 다른 실시예도.4 is another embodiment of the thin film electroluminescent device of the present invention.
제 5 도는 본 발명 박막 전계발광소자의 또다른 실시예도.5 is another embodiment of the thin film electroluminescent device of the present invention.
*도면의 주요부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *
11 : 유리기판12 : 투명전극11 glass substrate 12 transparent electrode
13,15 : 절연층14 : 발광층13,15 insulation layer 14 light emitting layer
16 : 금속전극16: metal electrode
본 발명은 백색광 박막 전계발광소자 및 그의 제조방법에 관한 것으로, 특히 SrS:Ce,k와 ZnS:Mn, Tb의 비를 조절하여 발광층을 제작하여 백색발광을 얻는 박막 전계발광소자 및 그의 제조방법에 관한 것이다.The present invention relates to a white light thin film electroluminescent device and a method of manufacturing the same, in particular to a thin film electroluminescent device to obtain a white light emission by producing a light emitting layer by adjusting the ratio of SrS: Ce, k and ZnS: Mn, Tb It is about.
제 1 도는 종래 박막 전계발광소자의 단면구조도로서, 이에 도시된 바와같이 유리기판(1)상에 투명전극(2)이 형성되고, 그 투명전극(2)위에 제1절연층(3)이 형성되며, 상기 제1절연층(3)위에 발광층(4)이 형성되고, 상기 발광층(4)위에 제2절연층(5)과 금속전극(6)이 차례로 형성되어 구성되는 것으로, 이의 제조방법을 상기한 제 1 도는 참조하여 설명하면 다음과 같다.FIG. 1 is a cross-sectional structure diagram of a conventional thin film electroluminescent device. As shown therein, a transparent electrode 2 is formed on a glass substrate 1, and a first insulating layer 3 is formed on the transparent electrode 2. The light emitting layer 4 is formed on the first insulating layer 3, and the second insulating layer 5 and the metal electrode 6 are sequentially formed on the light emitting layer 4. 1 is described with reference to the following.
먼저, 투명한 유리기판(1)위에 ITO(Indium Tin Oxide)막을 스퍼터링 방법으로 증착한 다음 광식각법에 의해 식각한후, 선 에칭하여 투명전극(2) 패턴을 형성한다.First, an ITO (Indium Tin Oxide) film is deposited on the transparent glass substrate 1 by a sputtering method and then etched by photolithography, followed by line etching to form a transparent electrode 2 pattern.
이후, 상기 투명전극(2)위에 SiON, Y2O3, BaTiO3등의 절연체를 전자빔 증착법 또는 스퍼터링법으로 증착하여 제1절연층(3)을 형성한 다음 그 위에 발광층(4)인 ZnS, SrS, CaS 등에 미량의 천이금속, 희토류원소 등을 첨가한 형광체를 페리트(Pellet) 또는 타켓(Target) 형태로 제조하여 전자빔증착법 또는 스퍼터링방법으로 증착한다.Subsequently, an insulator such as SiON, Y 2 O 3 , BaTiO 3 , or the like is deposited on the transparent electrode 2 by electron beam deposition or sputtering to form a first insulating layer 3, and then ZnS, which is a light emitting layer 4, thereon. Phosphors containing a small amount of transition metals, rare earth elements, etc. added to SrS, CaS, etc. are prepared in the form of pellets or targets and deposited by electron beam deposition or sputtering.
그리고, 상기에서 증착한 발광층(4)의 결정성을 개선하기 위하여 필요에 따라 포스트-어닐링(Post-annealing)를 수행하기도 한다.In order to improve the crystallinity of the light emitting layer 4 deposited above, post-annealing may be performed as necessary.
그후, 상기 발광층(4)위에 제2절연층(5)을 제1절연층(3)과 동일한 방법으로 형성한 다음 그 위에 알루미늄(Al)을 저항가열 또는 스퍼터링방법으로 증착한 후 포토리소그래피(Photolithography)와 습식에칭으로 알루미늄(Al)을 패터닝하여 상기 투명전극(2)과 수직이 되는 금속전극(6)을 형성한다.Thereafter, a second insulating layer 5 is formed on the light emitting layer 4 in the same manner as the first insulating layer 3, and then aluminum (Al) is deposited thereon by resistive heating or sputtering and then photolithography. ) And aluminum (Al) by wet etching to form a metal electrode (6) perpendicular to the transparent electrode (2).
이때, 각층의 막 두께는 투명전극(2)과 금속전극(6)은 각각 2000Å 정도이고, 제1절연층(3)과 제2절연층(5)은 각각 3000Å, 발광층(4)은 6000~12000Å 정도의 두께로 형성한다.In this case, the film thickness of each layer is about 2000 kPa for the transparent electrode 2 and the metal electrode 6, and for each of the first insulating layer 3 and the second insulating layer 5 is 3000 kPa, and the light emitting layer 4 is 6000 to 6000 m. It is formed to a thickness of about 12000Å.
이와같이 제조된 박막 전계발광소자는 투명전극(2)과 금속전극(6) 사이에 교류전압을 인가하면 발광층(4)내에 고전장(~106V/㎝)이 형성되고, 발광층(4)과 제1,제2절연층(3)(5)계면에서 발생된 전자가 발광층(4)의 전도대로 터널링하고, 터널링된 전자는 발광층(4)의 고전장에 의해 가속되며, 가속된 전자는 형광체와 발광중심에 충돌하게 된다.In the thin film electroluminescent device manufactured as described above, when an alternating voltage is applied between the transparent electrode 2 and the metal electrode 6, a high field (˜10 6 V / cm) is formed in the light emitting layer 4, and the light emitting layer 4 and the The electrons generated at the first and second insulating layers 3 and 5 tunnel into the conduction layer of the light emitting layer 4, and the tunneled electrons are accelerated by the high field of the light emitting layer 4, and the accelerated electrons emit light with the phosphor. Will collide in the center.
이때 발광중심의 기저상태의 전자가 여기상태로 여기되고 여기된 전자가 다시 기저상태로 떨어질때 그 에너지차 만큼의 고유한 광을 방출하게 된다.At this time, when the electrons in the ground state of the light emitting center are excited to the excited state and the excited electrons fall back to the ground state, the intrinsic light of the energy difference is emitted.
이와같은 박막 전계발광소자의 형광체로서 ZnS에 Mn이 도핑된 경우에는 황동색을 방출하게 되며, SrS에 CeCl3가 도핑된 경우에는 청록색, ZnS에 TbF3가 도핑된 경우에는 녹색광을 방출하게 된다.In this case as such a thin film phosphor of the light emitting element in which Mn is doped to ZnS it is and emits a brass color, and when the CeCl 3 is doped in the SrS when the TbF 3 is doped into the cyan, ZnS has emits green light.
그러므로, 제 1 도와 같이 발광층(4)을 ZnS:Mn과 SrS:Ce 를 적층구조로 형성하게 되는 경우 청색에서 적색까지의 파장영역의 범위에서 누르스름한 백색(Yellowish White)광을 방출하게 된다.Therefore, when the light emitting layer 4 is formed of a stacked structure of ZnS: Mn and SrS: Ce as in the first diagram, yellowish white light is emitted in the wavelength range from blue to red.
따라서, 천연색 디스플레이를 구현하기 위해서는 청색, 녹색, 적색의 광의 3원색의 비를 3 : 6 : 1의 배율로 맞추어야 하는데 적색광이 상대적으로 광의 강도(Intensity)가 높으므로 휘도밸런스를 이룰 수 없게 되고, 적층구조로 발광층(4)을 구성하게 되면 그 발광층(4)의 두께가 증가하게 되므로 구동전압이 증가하게 된다.Therefore, in order to implement a natural color display, the ratio of three primary colors of blue, green, and red light must be adjusted at a magnification of 3: 6: 1, and since red light has a relatively high intensity of light, it is impossible to achieve luminance balance. When the light emitting layer 4 is formed in a stacked structure, the thickness of the light emitting layer 4 is increased, thereby increasing the driving voltage.
이와같은 종래 전계발광소자의 스펙트럼은 제 2 도와 같이 나타난다.The spectrum of such a conventional electroluminescent device is shown as the second degree.
이상에서 설명한 종래의 박막 전계발광소자와 같이 백색광 전계발광소자를 SrS:Ce와 ZnS:Mn의 형광체를 적층으로 형성하여 구성하는 경우에는 파장영역이 비록 청색에서 적색까지의 광이 나오지만 적색의 휘도가 상대적으로 높기 때문에 휘도밸런스를 맞추기가 곤란하며, 또한 휘도를 높이기 위해 발광층의 두께를 증가시키게 되면 구동전압이 높아지는 문제점이 있었다.In the case where the white light electroluminescent device is formed by stacking phosphors of SrS: Ce and ZnS: Mn as in the conventional thin film electroluminescent device described above, although the wavelength is emitted from blue to red, the luminance of red is Since it is relatively high, it is difficult to match the luminance balance, and when the thickness of the light emitting layer is increased to increase the luminance, the driving voltage increases.
따라서 본 발명은 이러한 문제점을 해결하기 위하여 SrS:Ce, k 와 ZnS:Mn, Tb 형광체를 일정비율로 혼합한 단층의 발광층을 형성하거나 SrS:Ce, k 와 ZnS:Mn, Tb 형광체를 다층으로 적층한 발광층을 형성하여 발광휘도의 균형을 맞출 수 있도록 한 박막 전계발광소자를 제공하는 것을 목적으로 한다.Therefore, in order to solve this problem, the present invention forms a single emission layer in which SrS: Ce, k and ZnS: Mn, Tb phosphors are mixed at a constant ratio, or SrS: Ce, k and ZnS: Mn, Tb phosphors are laminated in multiple layers. It is an object of the present invention to provide a thin film electroluminescent device capable of forming a light emitting layer to balance light emission luminance.
이와같은 목적을 수행하기 위하여 본 발명은 기판위에 투명전극, 제1절연층, ZnS:Mn, Tb dhk SrS:Ce, k 이 일정한 비율로 혼합된 발광층, 제2절연층, 금속전극을 차례로 형성하여 구성한다.In order to accomplish the above object, the present invention forms a transparent electrode, a first insulating layer, a light emitting layer in which ZnS: Mn, Tb dhk SrS: Ce, k are mixed in a constant ratio, a second insulating layer, and a metal electrode on a substrate. Configure.
또한, 본 발명은 기판위에 투명전극을 형성하는 공정과, 상기 투명 전극위에 제1절연층을 형성하는 공정과, 상기 제1절연층 위에 발광중심으로 Tb 와 Mn 이 첨가된 ZnS 와 발광중심으로 CeCl3와 KCl 이 첨가된 SrS를 혼합한 발광층을 형성하는 공정과, 상기 발광층 위에 제2절연층을 형성하는 공정과, 상기 제2절연층 위에 금속전극을 형성하는 공정으로 이루어지도록 구성한 것으로, 이를 첨부한 도면을 실시예로 하여 상세히 설명하면 다음과 같다.The present invention also provides a process of forming a transparent electrode on a substrate, a process of forming a first insulating layer on the transparent electrode, ZnS added Tb and Mn as a light emitting center on the first insulating layer and CeCl as a light emitting center. And a step of forming a light emitting layer in which SrS added with 3 and KCl is added, a step of forming a second insulating layer on the light emitting layer, and a step of forming a metal electrode on the second insulating layer. Referring to the drawings in detail as an embodiment as follows.
제 3 도는 본 발명 박막 전계발광소자의 구조도로서, 이에 도시한 바와같이 유리기판(11)상에 투명전극(12)이 형성되고, 투명전극(12)위에 제1절연층(13)이 형성되며, 상기 제1절연층(13)위에 ZnS:Mn, Tb와 SrS:Ce, k가 일정한 비율로 혼합되어진 발광층(14)위에 제2절연층(15)과 금속전극(16)이 차례로 형성되어 구성되는 것으로 이의 제조방법을 상기한 제 3 도를 참조하여 상세히 설명하면 다음과 같다.3 is a structural diagram of the thin film electroluminescent device of the present invention. As shown in FIG. 3, a transparent electrode 12 is formed on a glass substrate 11, and a first insulating layer 13 is formed on the transparent electrode 12. The second insulating layer 15 and the metal electrode 16 are sequentially formed on the light emitting layer 14 in which ZnS: Mn, Tb, SrS: Ce, and k are mixed at a predetermined ratio on the first insulating layer 13. It will be described in detail with reference to Figure 3 described above to be prepared as follows.
먼저, 유리기판(11) 위에 ITO(Indumn Tin Oxide)막을 스퍼터링방법으로 증착한 다음 광식각법에 의해 식각한후,선 에칭하여 투명전극(12) 패턴을 형성한 다음 상기 투명전극(12)위에 Y2O3, Si3N4, Ta2O5, SiON 등의 절연체를 전자빔증착법 또는 스퍼터링방법으로 증착하여 제1절연층(13)을 형성한다.First, an ITO (Indumn Tin Oxide) film is deposited on the glass substrate 11 by sputtering, and then etched by photolithography, followed by line etching to form a transparent electrode 12 pattern, and then Y on the transparent electrode 12. Insulators such as 2 O 3 , Si 3 N 4 , Ta 2 O 5 , and SiON are deposited by electron beam deposition or sputtering to form a first insulating layer 13.
다음으로, 상기 제1절연층(13)위에 발광층(14)을 형성하는데, 그 발광층(14)은 발광중심으로 Tb 와 Mn 이 첨가된 ZnS 분말과 발광중심으로 CeCl3와 KCl이 첨가된 SrS분말을 일정한 비율로 혼합하여 소결한 후 페리트(Pellet) 또는 타겟(Target)을 만들어 전자빔증착 또는 스퍼터링방법으로 증착하거나 독립적으로 ZnS:Mn, Tb와 SrS:Ce, k의 페리트 또는 타겟을 만들어 동시에 증착하는 방법으로 발광층(14)을 형성한다.Next, a light emitting layer 14 is formed on the first insulating layer 13, which is composed of a ZnS powder containing Tb and Mn as a light emitting center and an SrS powder containing CeCl 3 and KCl as a light emitting center. Is mixed and sintered at a constant rate to make a pellet or target and deposited by electron beam evaporation or sputtering method, or independently make ferrite or target of ZnS: Mn, Tb and SrS: Ce, k The light emitting layer 14 is formed by vapor deposition.
구후, 상기 발광층(14)위에 제2절연층(15)을 제1절연층(14)과 동일한 방법으로 형성한 다음 그 위에 알루미늄(Al)을 저항가열 또는 스퍼터링방법으로 증착한후 포토리소그래피(Photolithography)와 습식에칭으로 알루미늄(Al)을 패터닝하여 상기 투명전극(12)과 수직이 되는 금속전극(16)을 형성함으로써 본 발명 전계발광소자를 제조한다.After that, a second insulating layer 15 is formed on the light emitting layer 14 in the same manner as the first insulating layer 14, and then aluminum (Al) is deposited thereon by resistance heating or sputtering, and then photolithography. And the aluminum (Al) by wet etching to form a metal electrode 16 perpendicular to the transparent electrode 12 to manufacture the electroluminescent device of the present invention.
한편, 제 4 도는 본 발명 박막 전계발광소자의 다른 단면구조도로서, 이에 도시한 바와같이 발광층(14)을 ZnS:Tb, Mn층(14-1)과 SrS:Ce, k층(14-2)을 적층구조로 구성한 것으로, 발광스펙트럼을 개선하고자 하는 구조이다.4 is another cross-sectional structure diagram of the thin film electroluminescent device of the present invention. As shown therein, the light emitting layer 14 is formed of ZnS: Tb, Mn layer 14-1 and SrS: Ce, k layer 14-2. Is a laminated structure, which is intended to improve the emission spectrum.
또한, 제 5 도는 본 발명 박막 전계발광소자의 다른 단면구조도로서, 이에 도시한 바와같이 발광층(14)을 ZnS:Tb,Mn형광체(14-1A)와 SrS:Ce, k형광체(14-2A)를 교번한 다층구조로 구성한 것으로, 발광스펙트럼의 개선 및 휘도를 개선하기 위한 것이다.5 is another cross-sectional structure diagram of the thin film electroluminescent device of the present invention. As shown therein, the light emitting layer 14 is formed of ZnS: Tb, Mn phosphor 14-1A and SrS: Ce, k phosphor 14-2A. It is composed of a multi-layer structure alternately, to improve the light emission spectrum and to improve the brightness.
이상에서 설명한 바와같이 본 발명은 SrS:Ce, k와 ZnS:Mn, Tb 형광체를 이용하여 단층 및 다층으로 발광층을 형성함으로써, 발광파장특성을 개선하는 것은 물론 구동전압을 낮출 수 있는 효과가 있다.As described above, the present invention forms an emission layer in single and multiple layers using SrS: Ce, k and ZnS: Mn, Tb phosphors, thereby improving the emission wavelength characteristics and lowering the driving voltage.
Claims (6)
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