JPWO2023012930A1 - - Google Patents

Info

Publication number
JPWO2023012930A1
JPWO2023012930A1 JP2023539447A JP2023539447A JPWO2023012930A1 JP WO2023012930 A1 JPWO2023012930 A1 JP WO2023012930A1 JP 2023539447 A JP2023539447 A JP 2023539447A JP 2023539447 A JP2023539447 A JP 2023539447A JP WO2023012930 A1 JPWO2023012930 A1 JP WO2023012930A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023539447A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023012930A1 publication Critical patent/JPWO2023012930A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
JP2023539447A 2021-08-04 2021-08-04 Pending JPWO2023012930A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/028946 WO2023012930A1 (ja) 2021-08-04 2021-08-04 相変化材料および相変化型メモリ素子

Publications (1)

Publication Number Publication Date
JPWO2023012930A1 true JPWO2023012930A1 (zh) 2023-02-09

Family

ID=85155424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023539447A Pending JPWO2023012930A1 (zh) 2021-08-04 2021-08-04

Country Status (2)

Country Link
JP (1) JPWO2023012930A1 (zh)
WO (1) WO2023012930A1 (zh)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4865248B2 (ja) * 2004-04-02 2012-02-01 株式会社半導体エネルギー研究所 半導体装置
KR100609699B1 (ko) * 2004-07-15 2006-08-08 한국전자통신연구원 급격한 금속-절연체 전이 반도체 물질을 이용한 2단자반도체 소자 및 그 제조 방법
KR100871880B1 (ko) * 2006-05-30 2008-12-03 삼성전자주식회사 상 변화 메모리 장치의 메모리 셀 내의 상 변화 물질의일부를 리셋하기 위한 리셋 전류를 감소시키는 방법 및 상변화 메모리 장치
WO2015072228A1 (ja) * 2013-11-15 2015-05-21 独立行政法人産業技術総合研究所 スピン電子メモリ、情報記録方法及び情報再生方法
JP6086097B2 (ja) * 2014-06-17 2017-03-01 国立大学法人東北大学 多段相変化材料および多値記録相変化メモリ素子
JP7097599B2 (ja) * 2018-02-28 2022-07-08 国立大学法人東北大学 相変化材料および相変化材料を用いた相変化型メモリ素子

Also Published As

Publication number Publication date
WO2023012930A1 (ja) 2023-02-09

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Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240516