JPWO2023012930A1 - - Google Patents
Info
- Publication number
- JPWO2023012930A1 JPWO2023012930A1 JP2023539447A JP2023539447A JPWO2023012930A1 JP WO2023012930 A1 JPWO2023012930 A1 JP WO2023012930A1 JP 2023539447 A JP2023539447 A JP 2023539447A JP 2023539447 A JP2023539447 A JP 2023539447A JP WO2023012930 A1 JPWO2023012930 A1 JP WO2023012930A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2021/028946 WO2023012930A1 (ja) | 2021-08-04 | 2021-08-04 | 相変化材料および相変化型メモリ素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2023012930A1 true JPWO2023012930A1 (ja) | 2023-02-09 |
Family
ID=85155424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023539447A Pending JPWO2023012930A1 (ja) | 2021-08-04 | 2021-08-04 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPWO2023012930A1 (ja) |
WO (1) | WO2023012930A1 (ja) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4865248B2 (ja) * | 2004-04-02 | 2012-02-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR100609699B1 (ko) * | 2004-07-15 | 2006-08-08 | 한국전자통신연구원 | 급격한 금속-절연체 전이 반도체 물질을 이용한 2단자반도체 소자 및 그 제조 방법 |
KR100871880B1 (ko) * | 2006-05-30 | 2008-12-03 | 삼성전자주식회사 | 상 변화 메모리 장치의 메모리 셀 내의 상 변화 물질의일부를 리셋하기 위한 리셋 전류를 감소시키는 방법 및 상변화 메모리 장치 |
WO2015072228A1 (ja) * | 2013-11-15 | 2015-05-21 | 独立行政法人産業技術総合研究所 | スピン電子メモリ、情報記録方法及び情報再生方法 |
JP6086097B2 (ja) * | 2014-06-17 | 2017-03-01 | 国立大学法人東北大学 | 多段相変化材料および多値記録相変化メモリ素子 |
JP7097599B2 (ja) * | 2018-02-28 | 2022-07-08 | 国立大学法人東北大学 | 相変化材料および相変化材料を用いた相変化型メモリ素子 |
-
2021
- 2021-08-04 JP JP2023539447A patent/JPWO2023012930A1/ja active Pending
- 2021-08-04 WO PCT/JP2021/028946 patent/WO2023012930A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2023012930A1 (ja) | 2023-02-09 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20240516 |