JPWO2021157051A1 - - Google Patents

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Publication number
JPWO2021157051A1
JPWO2021157051A1 JP2020571731A JP2020571731A JPWO2021157051A1 JP WO2021157051 A1 JPWO2021157051 A1 JP WO2021157051A1 JP 2020571731 A JP2020571731 A JP 2020571731A JP 2020571731 A JP2020571731 A JP 2020571731A JP WO2021157051 A1 JPWO2021157051 A1 JP WO2021157051A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2020571731A
Other versions
JP7085031B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021157051A1 publication Critical patent/JPWO2021157051A1/ja
Application granted granted Critical
Publication of JP7085031B2 publication Critical patent/JP7085031B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32201—Generating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Treatment Of Fiber Materials (AREA)
JP2020571731A 2020-02-07 2020-02-07 プラズマ処理装置及びプラズマ処理方法 Active JP7085031B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/004764 WO2021157051A1 (ja) 2020-02-07 2020-02-07 プラズマ処理装置及びプラズマ処理方法

Publications (2)

Publication Number Publication Date
JPWO2021157051A1 true JPWO2021157051A1 (ja) 2021-08-12
JP7085031B2 JP7085031B2 (ja) 2022-06-15

Family

ID=77199497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020571731A Active JP7085031B2 (ja) 2020-02-07 2020-02-07 プラズマ処理装置及びプラズマ処理方法

Country Status (6)

Country Link
US (1) US20220367156A1 (ja)
JP (1) JP7085031B2 (ja)
KR (1) KR102501531B1 (ja)
CN (1) CN115004863A (ja)
TW (1) TWI784401B (ja)
WO (1) WO2021157051A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230020280A (ko) 2021-08-03 2023-02-10 주식회사 엘지에너지솔루션 배터리 검사 장치 및 배터리 검사 시스템

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0896992A (ja) * 1994-09-22 1996-04-12 Nissin Electric Co Ltd プラズマ処理装置の運転方法
WO2005116293A1 (ja) * 2004-05-28 2005-12-08 Konica Minolta Holdings, Inc. 薄膜形成装置及び薄膜形成方法
JP2016162795A (ja) * 2015-02-27 2016-09-05 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2016225376A (ja) * 2015-05-28 2016-12-28 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
WO2019229784A1 (ja) * 2018-05-28 2019-12-05 株式会社日立ハイテクノロジーズ プラズマ処理装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4704087B2 (ja) * 2005-03-31 2011-06-15 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP2010238881A (ja) * 2009-03-31 2010-10-21 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
EP3091559A1 (en) * 2015-05-05 2016-11-09 TRUMPF Huettinger Sp. Z o. o. Plasma impedance matching unit, system for supplying rf power to a plasma load, and method of supplying rf power to a plasma load
US10297422B2 (en) * 2015-11-04 2019-05-21 Lam Research Corporation Systems and methods for calibrating conversion models and performing position conversions of variable capacitors in match networks of plasma processing systems
US11929236B2 (en) * 2019-08-28 2024-03-12 Applied Materials, Inc. Methods of tuning to improve plasma stability

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0896992A (ja) * 1994-09-22 1996-04-12 Nissin Electric Co Ltd プラズマ処理装置の運転方法
WO2005116293A1 (ja) * 2004-05-28 2005-12-08 Konica Minolta Holdings, Inc. 薄膜形成装置及び薄膜形成方法
JP2016162795A (ja) * 2015-02-27 2016-09-05 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2016225376A (ja) * 2015-05-28 2016-12-28 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
WO2019229784A1 (ja) * 2018-05-28 2019-12-05 株式会社日立ハイテクノロジーズ プラズマ処理装置

Also Published As

Publication number Publication date
JP7085031B2 (ja) 2022-06-15
KR20210102178A (ko) 2021-08-19
KR102501531B1 (ko) 2023-02-21
TWI784401B (zh) 2022-11-21
TW202131381A (zh) 2021-08-16
CN115004863A (zh) 2022-09-02
WO2021157051A1 (ja) 2021-08-12
US20220367156A1 (en) 2022-11-17

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