JPWO2019054101A1 - 固体撮像装置、及びそれを備える撮像装置 - Google Patents
固体撮像装置、及びそれを備える撮像装置 Download PDFInfo
- Publication number
- JPWO2019054101A1 JPWO2019054101A1 JP2018561738A JP2018561738A JPWO2019054101A1 JP WO2019054101 A1 JPWO2019054101 A1 JP WO2019054101A1 JP 2018561738 A JP2018561738 A JP 2018561738A JP 2018561738 A JP2018561738 A JP 2018561738A JP WO2019054101 A1 JPWO2019054101 A1 JP WO2019054101A1
- Authority
- JP
- Japan
- Prior art keywords
- imaging device
- solid
- state imaging
- transfer
- pixels
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 150
- 238000009792 diffusion process Methods 0.000 claims abstract description 63
- 238000006243 chemical reaction Methods 0.000 claims abstract description 48
- 239000011159 matrix material Substances 0.000 claims abstract description 15
- 238000007599 discharging Methods 0.000 description 18
- 230000035945 sensitivity Effects 0.000 description 9
- 230000007704 transition Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002366 time-of-flight method Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
- G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
- G01S7/4863—Detector arrays, e.g. charge-transfer gates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
- H04N23/21—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only from near infrared [NIR] radiation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/74—Circuitry for compensating brightness variation in the scene by influencing the scene brightness using illuminating means
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/33—Transforming infrared radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- General Physics & Mathematics (AREA)
- Computer Networks & Wireless Communication (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Toxicology (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Optical Radar Systems And Details Thereof (AREA)
Abstract
Description
近年、スマートフォン、ゲーム機等に、例えば、赤外光を撮影対象空間に照射して、被写体(人物)の体や手の動きを検出する測距カメラが搭載されている。測距カメラで被写体の距離を検知する動作原理の1つとして、TOF(Time Of Flight)方式が知られている。
図1は、本発明の実施の形態1に係る撮像装置1000の概略構成の一例を示す機能ブロック図である。
本発明の実施の形態2に係る固体撮像装置について、実施の形態1との相違点を中心に説明する。
本発明の実施の形態3に係る固体撮像装置について、実施の形態1との相違点を中心に説明する。
本発明の実施の形態4に係る固体撮像装置について、実施の形態3との相違点を中心に説明する。
2、2a、2b 読み出し電極
3、3a、3b、3c、3d、3e、3f 第1の転送電極
4 浮遊拡散層
5 読み出し回路
6、6a、6b 露光制御電極
7、7a、7b 電荷排出部
8、8a、8b 転送チャネル
9 第2の転送電極
10 出力制御電極
12、12a、12b、12c、12d、12e、12f、12g、12h 制御線
13、13A、13B 画素
13a、13Aa、13Ba 第1画素
13b、13Ab、13Bb 第2画素
100 固体撮像装置
101 撮像部
102 AD変換部
103 タイミング生成部
104 シャッタドライバ
200 光源ドライバ
300 プロセッサ
400 光学レンズ
500 光源部
1000 撮像装置
Claims (13)
- 受光した光を信号電荷に変換する光電変換部と、当該光電変換部から読み出される前記信号電荷の蓄積と転送とを行う第1の転送電極と、を有する画素と、
行方向に並ぶ前記画素の前記第1の転送電極に共通して接続する制御線と、を備え、
行列状に配置される複数の前記画素の一部は、転送される前記信号電荷を蓄積する浮遊拡散層を有する浮遊拡散層保有画素であり、
前記制御線は、前記浮遊拡散層保有画素と、当該浮遊拡散層保有画素と列方向に並び、かつ前記浮遊拡散層を共用する前記画素と、にそれぞれ有する前記第1の転送電極に共通して接続する
固体撮像装置。 - 前記画素は、前記第1の転送電極を複数備え、
前記固体撮像装置は、複数の前記第1の転送電極のそれぞれに接続する複数の前記制御線を備える
請求項1に記載の固体撮像装置。 - 前記画素は、赤外光を受光する
請求項1または2に記載の固体撮像装置。 - 前記列方向に並ぶ、前記浮遊拡散層を共用する2以上の前記画素の、前記列方向における一端又は他端の前記画素は、前記浮遊拡散層保有画素である
請求項1〜3のいずれか1項に記載の固体撮像装置。 - 前記列方向に並ぶ、少なくとも1つの前記浮遊拡散層を共用する2以上の画素において、前記光電変換部から読み出される前記信号電荷のそれぞれは、当該2以上の画素が有する複数の前記第1の転送電極のうちの少なくとも1つの下で加算される
請求項2〜4のいずれか1項に記載の固体撮像装置。 - 前記画素は、更に、前記第1の転送電極の下に連なる、前記信号電荷を蓄積するk(kは2以上の整数)本の転送チャネルが、前記複数の画素の前記配置における行方向に並んで配置されるように、当該k本の転送チャネルを有する
請求項1〜5のいずれか1項に記載の固体撮像装置。 - 前記浮遊拡散層保有画素は、更に、前記複数の第1の転送電極のうちの1つに、前記列方向において隣接して配置される第2の転送電極と、当該第2の転送電極に、前記複数の画素の前記配置における行方向において隣接して配置される、前記信号電荷を前記浮遊拡散層に転送する出力制御電極と、を備え、
前記第2の転送電極は、前記信号電荷を前記列方向及び前記行方向に転送する
請求項2〜6のいずれか1項に記載の固体撮像装置。 - 前記行方向に隣接する前記浮遊拡散層保有画素の前記第2の転送電極のそれぞれは、前記行方向への前記信号電荷の転送を、前記行方向において互いに反対向きに行う
請求項7に記載の固体撮像装置。 - 前記浮遊拡散層保有画素に備えられた、前記出力制御電極、前記浮遊拡散層、及び前記浮遊拡散層に蓄積される前記信号電荷を読み出す読み出し回路の、前記行方向における配置順は、前記列毎且つ前記行毎に反転している
請求項7又は8に記載の固体撮像装置。 - 前記第2の転送電極の、前記行方向における両端のそれぞれに隣接して、同電位となる前記出力制御電極が配置される
請求項7に記載の固体撮像装置。 - 前記列方向に並ぶ、前記浮遊拡散層を共用する画素において、前記複数の第1の転送電極の電位は、それぞれ互いに等しく変化する
請求項1〜10のいずれか1項に記載の固体撮像装置。 - 前記浮遊拡散層保有画素は、前記複数の画素の前記配置における複数の浮遊拡散層配置行に並んで配置され、
1フレーム期間内における露光期間には、前記複数の画素の全てにおいて、互いに対応する前記複数の第1の転送電極のそれぞれの電位は、互いに等しく変化し、
前記1フレーム期間内における転送期間には、一の前記浮遊拡散層配置行に配置される前記浮遊拡散層保有画素と、当該浮遊拡散層保有画素が備える前記浮遊拡散層を共用する画素とからなる画素群単位で、互いに対応する前記複数の第1の転送電極のそれぞれの電位は、互いに等しく変化し、
一の前記画素群における前記第1の転送電極が変化している期間には、他の画素群における前記転送電極の電位は変化しない
請求項1〜11のいずれか1項に記載の固体撮像装置。 - 請求項1〜12のいずれか1項に記載の固体撮像装置と、
1フレーム期間内における露光期間毎に、複数のタイミングで赤外光をパルス状に発光する光源部と、
前記固体撮像装置の出力信号に基づいて、距離画像を生成するプロセッサとを備える
撮像装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017176781 | 2017-09-14 | ||
JP2017176781 | 2017-09-14 | ||
PCT/JP2018/029874 WO2019054101A1 (ja) | 2017-09-14 | 2018-08-09 | 固体撮像装置、及びそれを備える撮像装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019019163A Division JP2019106714A (ja) | 2017-09-14 | 2019-02-05 | 固体撮像装置、及びそれを備える撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6485676B1 JP6485676B1 (ja) | 2019-03-20 |
JPWO2019054101A1 true JPWO2019054101A1 (ja) | 2019-11-07 |
Family
ID=65723516
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018561738A Active JP6485676B1 (ja) | 2017-09-14 | 2018-08-09 | 固体撮像装置、及びそれを備える撮像装置 |
JP2019019163A Pending JP2019106714A (ja) | 2017-09-14 | 2019-02-05 | 固体撮像装置、及びそれを備える撮像装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019019163A Pending JP2019106714A (ja) | 2017-09-14 | 2019-02-05 | 固体撮像装置、及びそれを備える撮像装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11460549B2 (ja) |
EP (1) | EP3684053A4 (ja) |
JP (2) | JP6485676B1 (ja) |
CN (1) | CN111034178B (ja) |
WO (1) | WO2019054101A1 (ja) |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100387050C (zh) * | 2002-06-12 | 2008-05-07 | 索尼株式会社 | 固态成像装置、用于固态成像装置的方法、成像方法和成像器 |
US7916195B2 (en) * | 2006-10-13 | 2011-03-29 | Sony Corporation | Solid-state imaging device, imaging apparatus and camera |
JP2008268112A (ja) * | 2007-04-24 | 2008-11-06 | Sanyo Electric Co Ltd | センサ |
JP2009038309A (ja) * | 2007-08-03 | 2009-02-19 | Sharp Corp | 固体撮像素子およびその製造方法、電子情報機器 |
JP4900190B2 (ja) * | 2007-10-19 | 2012-03-21 | ソニー株式会社 | 固体撮像装置 |
JP4720813B2 (ja) * | 2007-10-19 | 2011-07-13 | ソニー株式会社 | 固体撮像装置 |
US7960768B2 (en) * | 2008-01-17 | 2011-06-14 | Aptina Imaging Corporation | 3D backside illuminated image sensor with multiplexed pixel structure |
JP5404112B2 (ja) * | 2009-03-12 | 2014-01-29 | キヤノン株式会社 | 固体撮像素子、その駆動方法及び撮像システム |
JP5471117B2 (ja) * | 2009-07-24 | 2014-04-16 | ソニー株式会社 | 固体撮像装置とその製造方法並びにカメラ |
JP2011091341A (ja) * | 2009-10-26 | 2011-05-06 | Toshiba Corp | 固体撮像装置 |
JP2011159757A (ja) * | 2010-01-29 | 2011-08-18 | Sony Corp | 固体撮像装置とその製造方法、固体撮像装置の駆動方法、及び電子機器 |
KR101452655B1 (ko) * | 2010-07-12 | 2014-10-22 | 샤프 가부시키가이샤 | 표시 장치 및 그 구동 방법 |
JP5934930B2 (ja) * | 2011-02-04 | 2016-06-15 | パナソニックIpマネジメント株式会社 | 固体撮像装置およびその駆動方法 |
JP6145826B2 (ja) * | 2013-02-07 | 2017-06-14 | パナソニックIpマネジメント株式会社 | 撮像装置及びその駆動方法 |
TWI504981B (zh) * | 2013-02-22 | 2015-10-21 | Innolux Corp | 液晶顯示面板 |
JP5701336B2 (ja) | 2013-05-30 | 2015-04-15 | キヤノン株式会社 | 光電変換装置及びそれを用いた撮像システム |
JP6442710B2 (ja) * | 2013-07-23 | 2018-12-26 | パナソニックIpマネジメント株式会社 | 固体撮像装置、撮像装置及びその駆動方法 |
JP6341675B2 (ja) * | 2014-01-29 | 2018-06-13 | キヤノン株式会社 | 固体撮像装置及びその駆動方法並びにそれを用いた撮像システム |
WO2017022220A1 (ja) * | 2015-08-04 | 2017-02-09 | パナソニックIpマネジメント株式会社 | 固体撮像装置 |
JP2017108062A (ja) * | 2015-12-11 | 2017-06-15 | ソニー株式会社 | 固体撮像素子、撮像装置、および、固体撮像素子の製造方法 |
-
2018
- 2018-08-09 CN CN201880050716.9A patent/CN111034178B/zh active Active
- 2018-08-09 WO PCT/JP2018/029874 patent/WO2019054101A1/ja unknown
- 2018-08-09 JP JP2018561738A patent/JP6485676B1/ja active Active
- 2018-08-09 EP EP18856333.2A patent/EP3684053A4/en active Pending
-
2019
- 2019-02-05 JP JP2019019163A patent/JP2019106714A/ja active Pending
-
2020
- 2020-03-10 US US16/814,691 patent/US11460549B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP6485676B1 (ja) | 2019-03-20 |
JP2019106714A (ja) | 2019-06-27 |
US20200213553A1 (en) | 2020-07-02 |
EP3684053A4 (en) | 2020-11-25 |
WO2019054101A1 (ja) | 2019-03-21 |
EP3684053A1 (en) | 2020-07-22 |
US11460549B2 (en) | 2022-10-04 |
CN111034178B (zh) | 2022-09-20 |
CN111034178A (zh) | 2020-04-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5635937B2 (ja) | 固体撮像装置 | |
JP7018022B2 (ja) | 固体撮像装置及び測距撮像装置 | |
JP6485674B1 (ja) | 固体撮像装置、及びそれを備える撮像装置 | |
CN106576146B (zh) | 摄像装置及用于该摄像装置的固体摄像装置 | |
JP6341675B2 (ja) | 固体撮像装置及びその駆動方法並びにそれを用いた撮像システム | |
KR20170141661A (ko) | 고체 촬상 소자, 반도체 장치, 및, 전자 기기 | |
JP5657456B2 (ja) | 固体撮像装置 | |
CN103918253B (zh) | 具有多阶段数字求和的移动图像传感器 | |
JPWO2017056347A1 (ja) | 固体撮像装置 | |
JP6485675B1 (ja) | 固体撮像装置、及びそれを備える撮像装置 | |
JP6485676B1 (ja) | 固体撮像装置、及びそれを備える撮像装置 | |
JP2003110940A (ja) | 固体撮像装置 | |
JP2014216978A (ja) | 固体撮像素子および撮像装置 | |
JP6485725B1 (ja) | 固体撮像装置、及びそれを備える撮像装置 | |
CN109561874B (zh) | 固体摄像装置、放射线摄像***及固体摄像装置控制方法 | |
CN113079330A (zh) | 多线阵图像传感器及图像处理方法 | |
JP2010187279A (ja) | リニアセンサ及び画像読み取り装置 | |
JP2010118777A (ja) | 固体撮像装置及びその駆動方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181122 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20181122 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20181205 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190115 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190205 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6485676 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
SZ03 | Written request for cancellation of trust registration |
Free format text: JAPANESE INTERMEDIATE CODE: R313Z03 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |