JPWO2015152411A1 - 窒化物半導体装置およびその製造方法、ならびにダイオードおよび電界効果トランジスタ - Google Patents
窒化物半導体装置およびその製造方法、ならびにダイオードおよび電界効果トランジスタ Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 325
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 159
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 238000000034 method Methods 0.000 title claims description 13
- 230000005669 field effect Effects 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims abstract description 91
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 83
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 83
- 239000000203 mixture Substances 0.000 claims description 61
- 229910002601 GaN Inorganic materials 0.000 claims description 42
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 42
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 25
- 239000004094 surface-active agent Substances 0.000 claims description 19
- 230000007423 decrease Effects 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 598
- 230000015556 catabolic process Effects 0.000 description 57
- 238000005530 etching Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 18
- 230000007547 defect Effects 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 230000002159 abnormal effect Effects 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- 125000004429 atom Chemical group 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 229910052715 tantalum Inorganic materials 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000012467 final product Substances 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000005476 size effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- -1 nitride compound Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 101100041757 Caenorhabditis elegans sbds-1 gene Proteins 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
Description
図1は、本発明の第1の実施形態による窒化物半導体装置を製造するための半導体積層基板の構成を示す模式的な断面図である。すなわち、この第1の実施形態における半導体積層基板10は、基板11上に、介在層12、第3半導体層としての平坦化層13、高抵抗のバッファ層14、電子走行層15、電子供給層16、および半導体層17が順次積層されて構成されている。また、基板11上や介在層12の上層の部分には、パーティクルなどの異物20が存在している場合がある。図1は、異物20が介在層12上に存在している部分の断面図である。
次に、この第1の実施形態における半導体積層基板10の製造方法について説明する。この第1の実施形態による半導体積層基板10の製造方法においては、基板11上に、MOCVD法により各層を成長させる。表3は、半導体積層基板10を製造する際の成長条件を示す表である。表3においては、第1の実施形態における、介在層12、平坦化層13、バッファ層14、電子走行層15、電子供給層16、および半導体層17のそれぞれの成長条件を示す。具体的には、成長温度、成長圧力、V族(窒素:N)とIII族(AlおよびGaの少なくとも一方の元素)との比(V/III比)、および、これらの成長条件によって成長させた層の炭素濃度および膜厚を示す。なお、表3に記載した各種成長条件はあくまで一例であり、必ずしもこれらの条件に限定されるものではない。
次に、以上のように構成された第1の実施形態による半導体積層基板から製造される平坦化層を有する窒化物半導体装置としてのショットキーバリアダイオード(SBD)について説明する。図3は、第1の実施形態による窒化物半導体装置としてのSBDの模式的な断面図である。
Dmin≒2000x+500 … (1)
なお、(1)式はあくまで平坦化層13として必要な膜厚DminのAl組成比依存性の傾向を示す一例であり、数値はこれらに限定されるものではない。
次に、本発明の第2の実施形態による窒化物半導体装置としてのHEMT型電界効果トランジスタについて説明する。図6は、この第2の実施形態による窒化物半導体装置としてのHEMTを示す模式的な断面図である。
次に、本発明の第3の実施形態について説明する。すなわち、上述した第1および第2の実施形態においては、図1および図3に示す平坦化層13として、炭素が低濃度にドープされた単層または積層構造のAlXGa1-XN層(0≦X≦1)が用いられている。この第3の実施形態においては、この平坦化層13にさらにサーファクタント原子からなる不純物をドーピングする。ここで、サーファクタント原子としては、マグネシウム(Mg)、インジウム(In)、亜鉛(Zn)、シリコン(Si)、ゲルマニウム(Ge)、酸素(O)、およびアンチモン(Sb)などを挙げることができる。
2 HEMT
10 半導体積層基板
11 基板
12 介在層
13 平坦化層
14 バッファ層
15 電子走行層
16 電子供給層
17 半導体層
17a,17b フィールドプレート層
18A アノード電極
18C カソード電極
19,22 絶縁膜
20 異物
21D ドレイン電極
21G ゲート電極
21S ソース電極
Claims (15)
- 基板と、
前記基板の上層に設けられ炭素がドープされたバッファ層と、
前記バッファ層の上層に設けられた窒化物半導体からなる第1半導体層、および前記第1半導体層の上層に設けられ前記第1半導体層よりも平均的にバンドギャップが広い第2半導体層を有する半導体積層体と、
前記半導体積層体を構成する層のうちの少なくとも一部の層の上に設けられる第1電極と、
前記半導体積層体を構成する層のうちの少なくとも一部の層の上に、前記第1電極と離間して設けられる第2電極と、を備え、
前記基板と前記バッファ層との間に、炭素が1.0×1018cm-3以下の濃度で含有した第3半導体層が設けられ、
前記第3半導体層の膜厚が500nm以上3000nm未満である
ことを特徴とする窒化物半導体装置。 - 前記第3半導体層は、Al組成比XのAlXGa1-XN層(0≦X≦1)からなることを特徴とする請求項1に記載の窒化物半導体装置。
- 前記第3半導体層の膜厚が1000nm以上3000nm未満であることを特徴とする請求項1または2に記載の窒化物半導体装置。
- 前記バッファ層の平均の炭素濃度が、5.0×1018cm-3以上5.0×1019cm-3以下であることを特徴とする請求項1〜3のいずれか1項に記載の窒化物半導体装置。
- 前記第3半導体層は、Al組成比xが異なる複数のAlxGa1-xN層(0≦x≦1)から構成されていることを特徴とする請求項1〜4のいずれか1項に記載の窒化物半導体装置。
- 前記AlxGa1-xN層のAl組成比xが積層方向の上方に向かって減少していることを特徴とする請求項5に記載の窒化物半導体装置。
- 前記第3半導体層は、窒化アルミニウム層と窒化ガリウム層とが複数積層されたものであることを特徴とする請求項1〜4のいずれか1項に記載の窒化物半導体装置。
- 前記第3半導体層は、膜厚が100nm以上700nm以下の窒化ガリウム層と膜厚が20nm以上60nm以下の窒化アルミニウム層とを複数回繰り返し積層して構成されていることを特徴とする請求項7に記載の窒化物半導体装置。
- 前記第2半導体層の上層に、前記第2半導体層よりも平均的にバンドギャップが狭い窒化物半導体からなる第4半導体層が選択的に設けられていることを特徴とする請求項1〜8のいずれか1項に記載の窒化物半導体装置。
- 前記第3半導体層は、サーファクタント原子を不純物として含有し、前記サーファクタント原子の濃度が、1.0×1016cm-3以上1.0×1018cm-3以下であることを特徴とする請求項1〜9のいずれか1項に記載の窒化物半導体装置。
- 基板と、
前記基板の上層に設けられ炭素がドープされたバッファ層と、
前記バッファ層の上層に設けられた窒化物半導体からなる第1半導体層、および前記第1半導体層の上層に設けられ前記第1半導体層よりも平均的にバンドギャップが広い第2半導体層を有する半導体積層体と、
前記半導体積層体を構成する層のうちの少なくとも一部の層の上に設けられる第1電極と、
前記半導体積層体を構成する層のうちの少なくとも一部の層の上に、前記第1電極と離間して設けられる第2電極と、を備え、
前記基板と前記バッファ層との間に、サーファクタント原子を不純物として含有するとともに炭素を5.0×1018cm-3以下の濃度で含有し、膜厚が500nm以上3000nm未満の第3半導体層が設けられ、
前記サーファクタント原子の不純物濃度が1.0×1016cm-3以上1.0×1018cm-3以下である
ことを特徴とする窒化物半導体装置。 - 前記半導体積層体を構成する層のうちの少なくとも一部の層の上に、前記第1電極および前記第2電極と離間して設けられた第3電極をさらに備えることを特徴とする請求項1〜11のいずれか1項に記載の窒化物半導体装置。
- 請求項12に記載の窒化物半導体装置の構成を有し、
前記第1電極がゲート電極、前記第2電極がドレイン電極、および前記第3電極がソース電極である
ことを特徴とする電界効果トランジスタ。 - 請求項1〜11のいずれか1項に記載の窒化物半導体装置の構成を有し、
前記第1電極がアノード電極、および前記第2電極がカソード電極である
ことを特徴とするダイオード。 - 基板と、
前記基板の上層に設けられ炭素がドープされたバッファ層と、
前記バッファ層の上層に設けられた窒化物半導体からなる第1半導体層、および前記第1半導体層の上層に設けられ前記第1半導体層よりも平均的にバンドギャップが広い第2半導体層を有する半導体積層体と、
前記半導体積層体を構成する層のうちの少なくとも一部の層の上に設けられる第1電極と、
前記半導体積層体を構成する層のうちの少なくとも一部の層の上に、前記第1電極と離間して設けられる第2電極と、
を備える窒化物半導体装置の製造方法において、
前記基板の上層に、1.0×1018cm-3以下の濃度で炭素がドープされる成長条件によって、窒化物半導体からなる第3半導体層を500nm以上3000nm未満の膜厚に成長させた後、前記第3半導体層の上層に前記バッファ層を成長させる
ことを特徴とする窒化物半導体装置の製造方法。
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