JPWO2014080834A1 - 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法 - Google Patents
感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法 Download PDFInfo
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- JPWO2014080834A1 JPWO2014080834A1 JP2014548540A JP2014548540A JPWO2014080834A1 JP WO2014080834 A1 JPWO2014080834 A1 JP WO2014080834A1 JP 2014548540 A JP2014548540 A JP 2014548540A JP 2014548540 A JP2014548540 A JP 2014548540A JP WO2014080834 A1 JPWO2014080834 A1 JP WO2014080834A1
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- 238000007756 gravure coating Methods 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- LNMQRPPRQDGUDR-UHFFFAOYSA-N hexyl prop-2-enoate Chemical compound CCCCCCOC(=O)C=C LNMQRPPRQDGUDR-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000012216 imaging agent Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
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- 239000006115 industrial coating Substances 0.000 description 1
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- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- PBOSTUDLECTMNL-UHFFFAOYSA-N lauryl acrylate Chemical compound CCCCCCCCCCCCOC(=O)C=C PBOSTUDLECTMNL-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- DCUFMVPCXCSVNP-UHFFFAOYSA-N methacrylic anhydride Chemical compound CC(=C)C(=O)OC(=O)C(C)=C DCUFMVPCXCSVNP-UHFFFAOYSA-N 0.000 description 1
- NKHAVTQWNUWKEO-IHWYPQMZSA-N methyl hydrogen fumarate Chemical compound COC(=O)\C=C/C(O)=O NKHAVTQWNUWKEO-IHWYPQMZSA-N 0.000 description 1
- WBYWAXJHAXSJNI-UHFFFAOYSA-N methyl p-hydroxycinnamate Natural products OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 125000002816 methylsulfanyl group Chemical group [H]C([H])([H])S[*] 0.000 description 1
- OMNKZBIFPJNNIO-UHFFFAOYSA-N n-(2-methyl-4-oxopentan-2-yl)prop-2-enamide Chemical compound CC(=O)CC(C)(C)NC(=O)C=C OMNKZBIFPJNNIO-UHFFFAOYSA-N 0.000 description 1
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000006353 oxyethylene group Chemical group 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229940059574 pentaerithrityl Drugs 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 239000002304 perfume Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 150000003022 phthalic acids Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 235000007686 potassium Nutrition 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- UORVCLMRJXCDCP-UHFFFAOYSA-N propynoic acid Chemical compound OC(=O)C#C UORVCLMRJXCDCP-UHFFFAOYSA-N 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 235000015424 sodium Nutrition 0.000 description 1
- FQENQNTWSFEDLI-UHFFFAOYSA-J sodium diphosphate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]P([O-])(=O)OP([O-])([O-])=O FQENQNTWSFEDLI-UHFFFAOYSA-J 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 229940048086 sodium pyrophosphate Drugs 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 239000004334 sorbic acid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 150000003440 styrenes Chemical group 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 1
- 235000019818 tetrasodium diphosphate Nutrition 0.000 description 1
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 description 1
- LMYRWZFENFIFIT-UHFFFAOYSA-N toluene-4-sulfonamide Chemical compound CC1=CC=C(S(N)(=O)=O)C=C1 LMYRWZFENFIFIT-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- ROVRRJSRRSGUOL-UHFFFAOYSA-N victoria blue bo Chemical compound [Cl-].C12=CC=CC=C2C(NCC)=CC=C1C(C=1C=CC(=CC=1)N(CC)CC)=C1C=CC(=[N+](CC)CC)C=C1 ROVRRJSRRSGUOL-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
- C08F20/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F20/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
- C09D4/06—Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09D159/00 - C09D187/00
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
- H05K3/0076—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the composition of the mask
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/188—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by direct electroplating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/064—Photoresists
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/184—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method using masks
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Polymerisation Methods In General (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
本発明の一実施形態の感光性樹脂組成物は、(A)成分:(メタ)アクリル酸に由来する構造単位、スチレンに由来する構造単位及び(メタ)アクリル酸ベンジルに由来する構造単位を有するバインダーポリマーと、(B)成分:エチレンオキシ基及びプロピレンオキシ基を有し、上記エチレンオキシ基の構造単位数が1〜20であり、上記プロピレンオキシ基の構造単位数が2〜7であり、上記エチレンオキシ基及び上記プロピレンオキシ基の総構造単位数が10を超える第一のビスフェノール型ジ(メタ)アクリレートを含む光重合性化合物と、(C)成分:光重合開始剤と、を含有する。上記感光性樹脂組成物は、必要に応じて更にその他の成分を含んでいてもよい。
上記感光性樹脂組成物は、(A)成分として、下記一般式(1)で表される(メタ)アクリル酸に由来する構造単位、下記一般式(2)で表されるスチレン又はα−メチルスチレンに由来する構造単位、及び下記一般式(3)で表される(メタ)アクリル酸ベンジルに由来する構造単位を有するバインダーポリマーの少なくとも1種を含む。
次に、光重合性化合物(以下「(B)成分」ともいう。)について説明する。(B)成分である光重合性化合物は、エチレンオキシ基及びプロピレンオキシ基を有し、上記エチレンオキシ基の構造単位数が1〜20であり、上記プロピレンオキシ基の構造単位数が2〜7であり、上記エチレンオキシ基及び上記プロピレンオキシ基の総構造単位数が10を超える第一のビスフェノール型ジ(メタ)アクリレート(以下、「特定重合性化合物」ともいう)の少なくとも1種を必須成分として含む。(B)成分は、必要に応じて第一のビスフェノール型ジ(メタ)アクリレート以外の光重合性化合物を更に含んでいてもよい。
上記感光性樹脂組成物は、(C)成分として光重合開始剤の少なくとも1種を含む。(C)成分である光重合開始剤としては、特に制限はなく、通常用いられる光重合開始剤から適宜選択することができる。光重合開始剤の例としては、ベンゾフェノン、2−ベンジル−2−ジメチルアミノ−1−(4−モルホリノフェニル)−ブタノン−1,2−メチル−1−[4−(メチルチオ)フェニル]−2−モルホリノ−プロパノン−1等の芳香族ケトン;アルキルアントラキノン等のキノン類;ベンゾインアルキルエーテル等のベンゾインエーテル化合物;ベンゾイン、アルキルベンゾイン等のベンゾイン化合物;ベンジルジメチルケタール等のベンジル誘導体;2−(2−クロロフェニル)−4,5−ジフェニルイミダゾール二量体、2−(2−フルオロフェニル)−4,5−ジフェニルイミダゾール二量体等の2,4,5−トリアリールイミダゾール二量体;9−フェニルアクリジン、1,7−(9,9’−アクリジニル)ヘプタン等のアクリジン誘導体が挙げられる。これらは1種単独で又は2種類以上を組み合わせて用いることができる。
本実施形態の感光性樹脂組成物は、(D)成分として、ピラゾリン誘導体及びビスアルコキシアントラセンからなる群より選ばれる少なくとも1種の増感色素を含有することが好ましい。(D)成分である増感色素は1種単独で、又は2種以上を組み合わせて用いることができる。
上記感光性樹脂組成物は、(E)成分としてアミン系化合物の少なくとも1種を含むことが好ましい。アミン系化合物の例としては、ビス[4−(ジメチルアミノ)フェニル]メタン、ビス[4−(ジエチルアミノ)フェニル]メタン、ロイコクリスタルバイオレット等が挙げられる。これらは1種単独で又は2種以上を組み合わせて用いることができる。
上記感光性樹脂組成物は、必要に応じて、分子内に少なくとも1つのカチオン重合可能な環状エーテル基を有する光重合性化合物(オキセタン化合物等)、カチオン重合開始剤、マラカイトグリーン、ビクトリアピュアブルー、ブリリアントグリーン、メチルバイオレット等の染料、トリブロモフェニルスルホン、ジフェニルアミン、ベンジルアミン、トリフェニルアミン、ジエチルアニリン、2−クロロアニリン等の光発色剤、熱発色防止剤、4−トルエンスルホンアミド等の可塑剤、顔料、充填剤、消泡剤、難燃剤、安定剤、密着性付与剤、レベリング剤、剥離促進剤、酸化防止剤、香料、イメージング剤、熱架橋剤などを含有してもよい。これらは、1種単独で又は2種類以上を組み合わせて使用される。感光性樹脂組成物がその他の成分を含む場合、これらの含有量(複数種含む場合には、総含有量)は、(A)成分及び(B)成分の総量100質量部に対して、それぞれ0.01質量部〜20質量部程度とすることが好ましい。
本実施形態の感光性樹脂組成物は、有機溶剤の少なくとも1種を更に含んでいてもよい。有機溶剤の例としては、メタノール、エタノール等のアルコール溶剤;アセトン、メチルエチルケトン等のケトン溶剤;メチルセロソルブ、エチルセロソルブ、プロピレングリコールモノメチルエーテル等のグリコールエーテル溶剤;トルエン等の芳香族炭化水素溶剤;N,N−ジメチルホルムアミド等の非プロトン性極性溶剤などが挙げられる。これらは1種単独でも、2種以上を混合して用いてもよい。上記感光性樹脂組成物に含まれる有機溶剤の含有量は目的等に応じて適宜選択することができる。例えば、固形分が30質量%〜60質量%程度となる溶液として用いることができる。以下、有機溶剤を含む感光性樹脂組成物を「塗布液」ともいう。
本発明の感光性エレメントは、支持フィルムと、該支持フィルム上に設けられる上記感光性樹脂組成物の塗膜である感光性樹脂組成物層とを備える。なお、上記塗膜は上記感光性樹脂組成物が未硬化状態のものである。上記感光性エレメントは、必要に応じて保護フィルム等のその他の層を有していてもよい。
UV分光計としては、228A型Wビーム分光光度計((株)日立製作所)を使用できる。
上記感光性樹脂組成物を用いて、レジストパターンを形成することができる。本発明の一実施形態のレジストパターンの形成方法は、(i)上記感光性樹脂組成物の塗膜である感光性樹脂組成物層を基板上に形成する工程(感光層形成工程)と、(ii)上記感光性樹脂組成物層の少なくとも一部の領域に活性光線を照射する工程(露光工程)と、(iii)上記感光性樹脂組成物層の上記活性光線を照射した領域以外の領域を上記基板上から除去する工程(現像工程)と、を有する。上記レジストパターンの形成方法は必要に応じて更にその他の工程を有していてもよい。
まず、上記感光性樹脂組成物の塗膜である感光性樹脂組成物層を基板上に形成する。基板としては、絶縁層と該絶縁層上に形成された導体層とを備える基板(回路形成用基板)を用いることができる。
露光工程では、上記のようにして基板上に形成された感光性樹脂組成物層の少なくとも一部の領域に活性光線を照射することで、活性光線が照射された露光部が光硬化して、潜像が形成される。この際、感光性樹脂組成物層上に存在する支持フィルムが活性光線に対して透明である場合には、支持フィルムを通して活性光線を照射することが出来る。一方、支持フィルムが活性光線に対して遮光性を示す場合には、支持フィルムを除去した後に感光性樹脂組成物層に活性光線を照射する。
現像工程では、上記感光性樹脂組成物層の未硬化部分が回路形成用基板上から現像処理により除去されることで、感光性樹脂組成物層が光硬化した硬化物であるレジストパターンが基板上に形成される。感光性樹脂組成物層上に支持フィルムが存在している場合には、支持フィルムを除去してから、未露光部分の除去(現像)を行う。現像処理には、ウェット現像とドライ現像とがあるが、ウェット現像が広く用いられている。
本発明のプリント配線板の製造方法は、絶縁層と該絶縁層上に形成された導体層とを備える基板(回路形成用基板)の該導体層上に、上記レジストパターンの形成方法によりレジストパターンが形成された基板をエッチング処理又はめっき処理して、導体パターンを形成する工程を含む。プリント配線板の製造方法は、必要に応じてレジスト除去工程等のその他の工程を含んでいてもよい。基板のエッチング処理又はめっき処理は、形成されたレジストパターンをマスクとして、基板の導体層等に対して行われる。
(感光性樹脂組成物の溶液の調製)
表2及び表3に示す(A)〜(E)成分及び染料を同表に示す配合量(g単位)で、アセトン9g、トルエン5g及びメタノール5gとともに混合することにより、実施例1〜7及び比較例1〜5の感光性樹脂組成物の溶液をそれぞれ調製した。表2及び表3に示す(A)成分の配合量は不揮発分の質量(固形分量)である。表2及び表3に示す各成分の詳細については、以下のとおりである。なお、表2及び表3における「−」は未配合を意味する。
[バインダーポリマ(A−1)の合成]
重合性単量体(モノマ)であるメタクリル酸90g、メタクリル酸メチル6g、スチレン150g及びメタクリル酸ベンジル54g(質量比30/2/50/18)と、アゾビスイソブチロニトリル1.5gとを混合して得た溶液を「溶液a」とした。
ポンプ:日立 L−6000型((株)日立製作所)
カラム:以下の計3本、カラム仕様:10.7mmφ×300mm
Gelpack GL−R440
Gelpack GL−R450
Gelpack GL−R400M(以上、日立化成(株))
溶離液:テトラヒドロフラン(THF)
試料濃度:固形分が47.4質量%のバインダーポリマ溶液を120mg採取し、5mLのTHFに溶解して試料を調製した。
測定温度:40℃
注入量:200μL
圧力:49Kgf/cm2(4.8MPa)
流量:2.05mL/分
検出器:日立 L−3300型RI((株)日立製作所)
重合性単量体(モノマ)であるメタクリル酸90g、メタクリル酸メチル6g、スチレン150g及びメタクリル酸ベンジル54g(質量比30/2/50/18)と、アゾビスイソブチロニトリル0.72gとを混合して得た溶液を「溶液a’」とした。
重合性単量体(モノマ)として、表1に示す材料を同表に示す質量比で用いたほかは、バインダーポリマ(A−1)の溶液を得るのと同様にしてバインダーポリマ(A−3)〜(A−4)の溶液を得た。
・FA−321M:2,2−ビス(4−(メタクリロキシペンタエトキシ)フェニル)プロパン(日立化成(株)、「FA−321M」)
・FA−324M:2,2−ビス(4−(メタクリロキシジエトキシ)フェニル)プロパン(日立化成(株)、「FA−324M」)
・FA−3200MY:2,2−ビス(4−(メタクリロキシエトキシプロポキシ)フェニル)プロパン(エチレンオキサイド平均12mol及びプロピレンオキサイド平均4mol付加物)(日立化成(株)、「FA−3200MY」)
・BA−4PO10EO−DM:2,2−ビス(4−(メタクリロキシエトキシプロポキシ)フェニル)プロパン(エチレンオキサイド平均10mol及びプロピレンオキサイド平均4mol付加物)(日立化成(株)、「BA−4PO10EO−DM」)
・BA−4PO8EO−DM:2,2−ビス(4−(メタクリロキシエトキシプロポキシ)フェニル)プロパン(エチレンオキサイド平均8mol及びプロピレンオキサイド平均4mol付加物)(日立化成(株)、「BA−4PO8EO−DM」)
・BA−4PO6EO−DM:2,2−ビス(4−(メタクリロキシエトキシプロポキシ)フェニル)プロパン(エチレンオキサイド平均6mol及びプロピレンオキサイド平均4mol付加物)(日立化成(株)、「BA−4PO6EO−DM」)
・BA−2PO8EO−DM:2,2−ビス(4−(メタクリロキシエトキシプロポキシ)フェニル)プロパン(エチレンオキサイド平均8mol及びプロピレンオキサイド平均2mol付加物)(日立化成(株)、「BA−2PO8EO−DM」)
・B−CIM:2,2’−ビス(2−クロロフェニル)−4,4’,5,5’−テトラフェニルビスイミダゾール[2−(2−クロロフェニル)−4,5−ジフェニルイミダゾール二量体](Hampford社、「B−CIM」)
・PYR−1:1−フェニル−3−(4−メトキシスチリル)−5−(4−メトキシフェニル)ピラゾリン((株)日本化学工業所)
・LCV:ロイコクリスタルバイオレット(山田化学(株)、「LCV」)
・MKG:マラカイトグリーン(大阪有機化学工業(株)、「MKG」)
上記で得られた感光性樹脂組成物の溶液を、それぞれ厚さ16μmのポリエチレンテレフタレートフィルム(東レ(株)、「FB−40」)上に塗布し、70℃及び110℃の熱風対流式乾燥器で順次乾燥処理して、乾燥後の膜厚が25μmである感光性樹脂組成物層を形成した。この感光性樹脂組成物層上に保護フィルム(王子製紙(株)、「E−200K」)を貼り合わせ、ポリエチレンテレフタレートフィルム(支持フィルム)と、感光性樹脂組成物層と、保護フィルムとが順に積層された感光性エレメントをそれぞれ得た。
ガラスエポキシ材と、その両面に形成された銅箔(厚さ16μm)とからなる銅張積層板(日立化成(株)、「MCL−E−679F」)(以下、「基板」という。)を加熱して80℃に昇温させた後、実施例1〜7及び比較例1〜5に係る感光性エレメントを用いて、各々、基板の銅表面上に感光層を形成(ラミネート)した。ラミネートは、保護フィルムを除去しながら、各感光性エレメントの感光性樹脂組成物層が基板の銅表面に密着するようにして、温度120℃、ラミネート圧力4kgf/cm2(0.4MPa)の条件下で行った。このようにして、基板の銅表面上に感光性樹脂組成物層及びポリエチレンテレフタレートフィルムが積層された積層基板を得た。
露光後、積層基板からポリエチレンテレフタレートフィルムを剥離し、感光性樹脂組成物層を露出させ、30℃の1質量%炭酸ナトリウム水溶液を60秒間スプレーすることにより、未露光部分を除去した。このようにして、基板の銅表面上に感光性樹脂組成物の硬化物からなるレジストパターンを形成した。レジストパターン(硬化膜)として得られたステップタブレットの残存段数(ステップ段数)を測定することにより、感光性樹脂組成物の感度を評価した。感度は、上記ステップ段数により示され、この段数が高いほど感度が良好であることを意味する。結果を表4及び表5に示す。
ライン幅(L)/スペース幅(S)(以下、「L/S」と記す。)が3/3〜30/30(単位:μm)である描画パターンを用いて、41段ステップタブレットの残存段数が16段となるエネルギー量で上記積層基板の感光性樹脂組成物層に対して露光(描画)した。露光後、上記感度の評価と同様の現像処理を行った。
レジストパターンの屈曲性を以下のようにして評価した。FPC(Flexible Printed Circuit)基板(ニッカン工業(株)、「F−30VC1」、基板厚:25μm、銅厚:18μm)を80℃に加温し、その銅表面上に実施例1〜7及び比較例1〜5に係る感光性エレメントの感光性樹脂組成物層及び支持フィルムを、感光性樹脂組成物層がFPC基板側に対向するように、保護フィルムを剥がしながら110℃のヒートロールを用い1.5m/分の速度でラミネートした。この感光性樹脂組成物層及び支持体が積層されたFPC基板を、屈曲性を評価するための試験片とした。上記試験片には、405nmの青紫色レーザダイオードを光源とする直描露光機(日立ビアメカニクス(株)、「DE−1UH」)を使用して、41段ステップタブレットの現像後の残存ステップ段数で16段となるエネルギー量で露光を行い、感光性樹脂組成物層を光硬化させた。その後、支持フィルムを剥離、現像してFPC基板上にレジストパターンが積層された屈曲性評価用基板を得た。
感光性樹脂組成物層の現像性の評価を、以下のようにして最小現像時間(秒)を測定することで評価した。
上記積層基板を5cm四方に切断して評価用の積層基板とした。得られた評価用の積層基板を露光せずに現像した場合に、基板上に感光性樹脂組成物層が残らなくなるのに要する最小の現像時間(秒)を測定した。
<1> (メタ)アクリル酸に由来する構造単位、スチレン又はα−メチルスチレンに由来する構造単位及び(メタ)アクリル酸ベンジルに由来する構造単位を有するバインダーポリマーと、
エチレンオキシ基及びプロピレンオキシ基を有し、前記エチレンオキシ基の構造単位数が1〜20であり、前記プロピレンオキシ基の構造単位数が2〜7であり、前記エチレンオキシ基及び前記プロピレンオキシ基の総構造単位数が10を超える第一のビスフェノール型ジ(メタ)アクリレートを含む光重合性化合物と、
光重合開始剤と、
を含有する感光性樹脂組成物。
<2> ピラゾリン誘導体及びビスアルコキシアントラセンからなる群より選ばれる少なくとも1種の増感色素を更に含有する<1>に記載の感光性樹脂組成物。
<3> エチレンオキシ基を有し、前記エチレンオキシ基の構造単位数が8以下であり、前記第一のビスフェノール型ジ(メタ)アクリレートとは異なる第二のビスフェノール型ジ(メタ)アクリレートを更に含む<1>又は<2>に記載の感光性樹脂組成物。
<4> 支持フィルムと、
前記支持フィルム上に設けられた<1>〜<3>のいずれか1に記載の感光性樹脂組成物の塗膜である感光性樹脂組成物層と、
を備える感光性エレメント。
<5> 基板上に、<1>〜<3>のいずれか1項に記載の感光性樹脂組成物の塗膜である感光性樹脂組成物層を形成する感光層形成工程と、
前記感光性樹脂組成物層の少なくとも一部の領域に活性光線を照射する工程と、
前記感光性樹脂組成物層の前記活性光線を照射した領域以外の領域を前記基板上から除去する工程と、
を有するレジストパターンの形成方法。
<6> 前記活性光線の波長が340nm〜430nmの範囲内である<5>に記載のレジストパターンの形成方法。
<7> <5>又は<6>に記載のレジストパターンの形成方法によりレジストパターンが形成された基板をエッチング処理又はめっき処理する工程を含むプリント配線板の製造方法。
本明細書に記載された全ての文献、特許出願、および技術規格は、個々の文献、特許出願、および技術規格が参照により取り込まれることが具体的かつ個々に記された場合と同程度に、本明細書中に参照により取り込まれる。
Claims (7)
- (メタ)アクリル酸に由来する構造単位、スチレン又はα−メチルスチレンに由来する構造単位及び(メタ)アクリル酸ベンジルに由来する構造単位を有するバインダーポリマーと、
エチレンオキシ基及びプロピレンオキシ基を有し、前記エチレンオキシ基の構造単位数が1〜20であり、前記プロピレンオキシ基の構造単位数が2〜7であり、前記エチレンオキシ基及び前記プロピレンオキシ基の総構造単位数が10を超える第一のビスフェノール型ジ(メタ)アクリレートを含む光重合性化合物と、
光重合開始剤と、
を含有する感光性樹脂組成物。 - ピラゾリン誘導体及びビスアルコキシアントラセンからなる群より選ばれる少なくとも1種の増感色素を更に含有する請求項1に記載の感光性樹脂組成物。
- エチレンオキシ基を有し、前記エチレンオキシ基の構造単位数が8以下であり、前記第一のビスフェノール型ジ(メタ)アクリレートとは異なる第二のビスフェノール型ジ(メタ)アクリレートを更に含む請求項1又は請求項2に記載の感光性樹脂組成物。
- 支持フィルムと、
前記支持フィルム上に設けられる請求項1〜請求項3のいずれか1項に記載の感光性樹脂組成物の塗膜である感光性樹脂組成物層と、
を備える感光性エレメント。 - 基板上に、請求項1〜請求項3のいずれか1項に記載の感光性樹脂組成物の塗膜である感光性樹脂組成物層を形成する感光層形成工程と、
前記感光性樹脂組成物層の少なくとも一部の領域に活性光線を照射する工程と、
前記感光性樹脂組成物層の前記活性光線を照射した領域以外の領域を前記基板上から除去する工程と、
を有するレジストパターンの形成方法。 - 前記活性光線の波長が340nm〜430nmの範囲内である請求項5に記載のレジストパターンの形成方法。
- 請求項5又は請求項6に記載のレジストパターンの形成方法によりレジストパターンが形成された基板をエッチング処理又はめっき処理する工程を含むプリント配線板の製造方法。
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