JPWO2013157508A1 - 押圧力センサ - Google Patents
押圧力センサ Download PDFInfo
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- JPWO2013157508A1 JPWO2013157508A1 JP2014511203A JP2014511203A JPWO2013157508A1 JP WO2013157508 A1 JPWO2013157508 A1 JP WO2013157508A1 JP 2014511203 A JP2014511203 A JP 2014511203A JP 2014511203 A JP2014511203 A JP 2014511203A JP WO2013157508 A1 JPWO2013157508 A1 JP WO2013157508A1
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- 239000012528 membrane Substances 0.000 claims abstract description 11
- 239000011241 protective layer Substances 0.000 claims description 29
- 229920000747 poly(lactic acid) Polymers 0.000 claims description 14
- 239000004626 polylactic acid Substances 0.000 claims description 14
- 239000010408 film Substances 0.000 description 55
- 238000001514 detection method Methods 0.000 description 31
- 238000006073 displacement reaction Methods 0.000 description 30
- JVTAAEKCZFNVCJ-REOHCLBHSA-N L-lactic acid Chemical compound C[C@H](O)C(O)=O JVTAAEKCZFNVCJ-REOHCLBHSA-N 0.000 description 18
- 229920001432 poly(L-lactide) Polymers 0.000 description 18
- 239000000463 material Substances 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000002033 PVDF binder Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000005616 pyroelectricity Effects 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000002042 Silver nanowire Substances 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- RBMHUYBJIYNRLY-UHFFFAOYSA-N 2-[(1-carboxy-1-hydroxyethyl)-hydroxyphosphoryl]-2-hydroxypropanoic acid Chemical compound OC(=O)C(O)(C)P(O)(=O)C(C)(O)C(O)=O RBMHUYBJIYNRLY-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920001434 poly(D-lactide) Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
- H10N30/883—Additional insulation means preventing electrical, physical or chemical damage, e.g. protective coatings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/308—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/857—Macromolecular compositions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/953—Detector using nanostructure
- Y10S977/956—Of mechanical property
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
Abstract
Description
20,20A,20B,20C:平膜型圧電素子、
210,210A,210B,210C:圧電性シート、
220,221,222,223,224,225,226,221B,222B,223B,224B,221C:第1電極、
230,231,232,233,234,235,236,231B,232B,233B,234B,231C:第2電極、
30,30A,30B,30C,30D,30E,30F,30G:支持体、
310,310A,310B,310C,310D,310E,310F,310G:本体、
320,321,322,323,324,325,326,321B,322B,323B,324B,321C,321D,320F:開口部、
321F:貫通孔、
40,40A,40B,40C:保護層、
50:押し込み部材、
60:弾性体、
510:平板部、
520:首部、
530:頭部、
810:筐体、
811:貫通孔、
820:ベース回路基板
Claims (11)
- 対向する第1主面および第2主面を有する平膜の圧電性シートと、前記第1主面に形成された第1電極と、前記第2主面に形成された第2電極とを備える平膜型圧電素子と、
前記平膜型圧電素子の前記第2主面側に当接する第3主面を備える支持体と、を備える押圧力センサであって、
前記支持体は、前記第2電極の少なくとも一部の変形を許容する空間部を、前記第3主面側に備え、
該空間部に亘る圧電性シートへ外力によって生じる歪みが、前記第3主面の略直交する二方向で異なるように、前記平膜型圧電素子と前記支持体が配置されている、押圧力センサ。 - 前記支持体の第3主面から見た前記空間部の平面視形状は、略直交する二方向で長さが異なる形状である、請求項1に記載の押圧力センサ。
- 前記圧電性シートは、ポリ乳酸を含み、前記略直交する二方向とは異なる少なくとも一軸方向に延伸されている、請求項1または請求項2に記載の押圧力センサ。
- 前記圧電性シートの一軸に延伸されている方向は、前記略直交する二方向に対して略45°である、請求項3に記載の押圧力センサ。
- 前記平膜型圧電素子は、前記支持体の前記空間部の長手方向の両端にのみ固定されている、請求項1乃至請求項4のいずれかに記載の押圧力センサ。
- 前記空間部は、前記支持体の前記第3主面側から所定深さを有する凹部である、請求項1乃至請求項5のいずれかに記載の押圧力センサ。
- 前記凹部内には弾性体が配置されている、請求項6に記載の押圧力センサ。
- 前記空間部は、前記支持体における前記第3主面以外の面において開口している、請求項1乃至請求項7のいずれかに記載の押圧力センサ。
- 前記第1電極、前記第2電極および前記空間部の組は、複数である、請求項1乃至請求項8のいずれかに記載の押圧力センサ。
- 前記圧電性シートの前記第1主面側に保護層を備える、請求項1乃至請求項9のいずれかに記載の押圧力センサ。
- 前記圧電性シートの前記第1主面側に、前記圧電性シートの前記空間部に対向する範囲を押し込む押し込み部材を備える、請求項1乃至請求項10のいずれかに記載の押圧力センサ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012093525 | 2012-04-17 | ||
JP2012093525 | 2012-04-17 | ||
PCT/JP2013/061146 WO2013157508A1 (ja) | 2012-04-17 | 2013-04-15 | 押圧力センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2013157508A1 true JPWO2013157508A1 (ja) | 2015-12-21 |
JP5924405B2 JP5924405B2 (ja) | 2016-05-25 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014511203A Active JP5924405B2 (ja) | 2012-04-17 | 2013-04-15 | 押圧力センサ |
Country Status (4)
Country | Link |
---|---|
US (1) | US10024739B2 (ja) |
JP (1) | JP5924405B2 (ja) |
CN (1) | CN104246460B (ja) |
WO (1) | WO2013157508A1 (ja) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107742670B (zh) | 2011-04-08 | 2020-06-23 | 株式会社村田制作所 | 操作设备 |
JPWO2015041195A1 (ja) * | 2013-09-17 | 2017-03-02 | 株式会社村田製作所 | 押圧センサ |
JP6015867B2 (ja) * | 2013-12-06 | 2016-10-26 | 株式会社村田製作所 | 押圧センサ |
WO2015093357A1 (ja) * | 2013-12-19 | 2015-06-25 | 株式会社村田製作所 | 操作入力装置 |
JP6287166B2 (ja) * | 2013-12-19 | 2018-03-07 | 株式会社村田製作所 | 圧電センサの検査方法 |
WO2015093358A1 (ja) * | 2013-12-19 | 2015-06-25 | 株式会社村田製作所 | 押圧センサ |
WO2015093383A1 (ja) * | 2013-12-20 | 2015-06-25 | 株式会社村田製作所 | 圧電センサ |
JPWO2016132581A1 (ja) * | 2015-02-18 | 2017-08-24 | 株式会社村田製作所 | 圧電素子および圧電センサ |
TWI708168B (zh) * | 2015-03-09 | 2020-10-21 | 日商新力股份有限公司 | 輸入裝置及電氣機器 |
JP6465211B2 (ja) * | 2015-06-24 | 2019-02-06 | 株式会社村田製作所 | 押圧センサ、入力装置 |
DE112016000917B4 (de) * | 2015-07-16 | 2020-12-31 | Sumitomo Riko Company Limited | Piezoelektrischer Sensor |
CN105487703A (zh) * | 2015-07-22 | 2016-04-13 | 敦泰电子有限公司 | 压力检测器及其相关的显示模组 |
US10353503B2 (en) * | 2015-10-29 | 2019-07-16 | Texas Instruments Incorporated | Integrated force sensing element |
CN105824468B (zh) * | 2016-03-15 | 2018-12-25 | 京东方科技集团股份有限公司 | 一种压力触控面板及其制备方法和显示装置 |
CN107421661A (zh) * | 2016-05-23 | 2017-12-01 | 凌纬科技股份有限公司 | 压力感测装置及包含此压力感测装置的智能压力感测垫 |
JP2017211773A (ja) * | 2016-05-24 | 2017-11-30 | オリンパス株式会社 | 操作装置および操作システム |
WO2018084155A1 (ja) * | 2016-11-01 | 2018-05-11 | 株式会社村田製作所 | 変形検知装置及び把持部品 |
WO2018180288A1 (ja) * | 2017-03-29 | 2018-10-04 | Tdk株式会社 | 流体圧力検出装置 |
CN107192485B (zh) * | 2017-05-11 | 2019-04-26 | 中原工学院 | 一种柔性可拉伸的多功能纳米纤维传感器及其制备方法 |
JP6996143B2 (ja) * | 2017-07-19 | 2022-01-17 | 株式会社村田製作所 | 圧電センサ、タッチパネル、タッチ式入力装置および表示装置 |
US10952642B2 (en) * | 2017-11-09 | 2021-03-23 | Amorepacific Corporation | Strain sensor unit and skin sensor module comprising the same |
KR102449450B1 (ko) * | 2018-02-08 | 2022-09-30 | 삼성디스플레이 주식회사 | 압력 센서 부재 및 이를 포함하는 표시 장치 |
CN214748552U (zh) * | 2018-06-20 | 2021-11-16 | 株式会社村田制作所 | 按压传感器和按压检测装置 |
JP2021039480A (ja) * | 2019-09-02 | 2021-03-11 | キヤノン株式会社 | 操作入力装置および電子機器 |
KR20210059849A (ko) * | 2019-11-15 | 2021-05-26 | 삼성디스플레이 주식회사 | 표시 패널을 포함하는 전자 장치 |
CN115135980A (zh) * | 2019-12-24 | 2022-09-30 | 麻省理工学院 | 全向软质电容触觉传感器及其使用方法 |
US20230292524A1 (en) * | 2022-02-02 | 2023-09-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ferroelectric memory device with relaxation layers |
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2013
- 2013-04-15 CN CN201380020400.2A patent/CN104246460B/zh active Active
- 2013-04-15 JP JP2014511203A patent/JP5924405B2/ja active Active
- 2013-04-15 WO PCT/JP2013/061146 patent/WO2013157508A1/ja active Application Filing
-
2014
- 2014-10-16 US US14/515,881 patent/US10024739B2/en active Active
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JPH11295161A (ja) * | 1998-04-06 | 1999-10-29 | Hosiden Corp | 感圧センサユニット |
JP2001004656A (ja) * | 1999-04-22 | 2001-01-12 | Ngk Insulators Ltd | 力センサ及びその感度調整方法 |
JP2001352111A (ja) * | 2000-06-05 | 2001-12-21 | Matsushita Electric Ind Co Ltd | 膜型圧電セラミック素子およびその製造方法 |
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JP2011253517A (ja) * | 2010-05-06 | 2011-12-15 | Murata Mfg Co Ltd | タッチパネル、ならびにタッチ式入力装置およびその制御方法 |
Also Published As
Publication number | Publication date |
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WO2013157508A1 (ja) | 2013-10-24 |
CN104246460B (zh) | 2017-05-10 |
JP5924405B2 (ja) | 2016-05-25 |
CN104246460A (zh) | 2014-12-24 |
US10024739B2 (en) | 2018-07-17 |
US20150035411A1 (en) | 2015-02-05 |
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