JPWO2006054686A1 - 有機薄膜トランジスタの製造方法及び有機薄膜トランジスタ - Google Patents
有機薄膜トランジスタの製造方法及び有機薄膜トランジスタ Download PDFInfo
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- JPWO2006054686A1 JPWO2006054686A1 JP2006545158A JP2006545158A JPWO2006054686A1 JP WO2006054686 A1 JPWO2006054686 A1 JP WO2006054686A1 JP 2006545158 A JP2006545158 A JP 2006545158A JP 2006545158 A JP2006545158 A JP 2006545158A JP WO2006054686 A1 JPWO2006054686 A1 JP WO2006054686A1
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- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 125000005447 octyloxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- MSRJTTSHWYDFIU-UHFFFAOYSA-N octyltriethoxysilane Chemical compound CCCCCCCC[Si](OCC)(OCC)OCC MSRJTTSHWYDFIU-UHFFFAOYSA-N 0.000 description 1
- 229960003493 octyltriethoxysilane Drugs 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- QRMPKOFEUHIBNM-UHFFFAOYSA-N p-dimethylcyclohexane Natural products CC1CCC(C)CC1 QRMPKOFEUHIBNM-UHFFFAOYSA-N 0.000 description 1
- 229930004008 p-menthane Natural products 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000006340 pentafluoro ethyl group Chemical group FC(F)(F)C(F)(F)* 0.000 description 1
- 125000000538 pentafluorophenyl group Chemical group FC1=C(F)C(F)=C(*)C(F)=C1F 0.000 description 1
- 125000004115 pentoxy group Chemical group [*]OC([H])([H])C([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 125000004675 pentylcarbonyl group Chemical group C(CCCC)C(=O)* 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
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- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 125000003356 phenylsulfanyl group Chemical group [*]SC1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 125000003170 phenylsulfonyl group Chemical group C1(=CC=CC=C1)S(=O)(=O)* 0.000 description 1
- 239000005054 phenyltrichlorosilane Substances 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 125000005542 phthalazyl group Chemical group 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
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- 229920000058 polyacrylate Polymers 0.000 description 1
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- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
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- 239000011112 polyethylene naphthalate Substances 0.000 description 1
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- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 125000004673 propylcarbonyl group Chemical group 0.000 description 1
- 235000019423 pullulan Nutrition 0.000 description 1
- 125000003226 pyrazolyl group Chemical group 0.000 description 1
- 125000005412 pyrazyl group Chemical group 0.000 description 1
- 150000003220 pyrenes Chemical class 0.000 description 1
- 125000005495 pyridazyl group Chemical group 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 125000005400 pyridylcarbonyl group Chemical group N1=C(C=CC=C1)C(=O)* 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 125000002294 quinazolinyl group Chemical group N1=C(N=CC2=CC=CC=C12)* 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000002094 self assembled monolayer Substances 0.000 description 1
- 239000013545 self-assembled monolayer Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000000475 sulfinyl group Chemical group [*:2]S([*:1])=O 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- NLDYACGHTUPAQU-UHFFFAOYSA-N tetracyanoethylene Chemical group N#CC(C#N)=C(C#N)C#N NLDYACGHTUPAQU-UHFFFAOYSA-N 0.000 description 1
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical group N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- FHCPAXDKURNIOZ-UHFFFAOYSA-N tetrathiafulvalene Chemical compound S1C=CSC1=C1SC=CS1 FHCPAXDKURNIOZ-UHFFFAOYSA-N 0.000 description 1
- 125000000335 thiazolyl group Chemical group 0.000 description 1
- CRUIOQJBPNKOJG-UHFFFAOYSA-N thieno[3,2-e][1]benzothiole Chemical compound C1=C2SC=CC2=C2C=CSC2=C1 CRUIOQJBPNKOJG-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- GBXOGFTVYQSOID-UHFFFAOYSA-N trichloro(2-methylpropyl)silane Chemical compound CC(C)C[Si](Cl)(Cl)Cl GBXOGFTVYQSOID-UHFFFAOYSA-N 0.000 description 1
- BGSBEWOQSOBCCU-UHFFFAOYSA-N trichloro(3-phenoxypropyl)silane Chemical compound Cl[Si](Cl)(Cl)CCCOC1=CC=CC=C1 BGSBEWOQSOBCCU-UHFFFAOYSA-N 0.000 description 1
- IRSHKGIWUBHUIQ-UHFFFAOYSA-N trichloro(4-phenylbutyl)silane Chemical compound Cl[Si](Cl)(Cl)CCCCC1=CC=CC=C1 IRSHKGIWUBHUIQ-UHFFFAOYSA-N 0.000 description 1
- SIPHWXREAZVVNS-UHFFFAOYSA-N trichloro(cyclohexyl)silane Chemical compound Cl[Si](Cl)(Cl)C1CCCCC1 SIPHWXREAZVVNS-UHFFFAOYSA-N 0.000 description 1
- ZOYFEXPFPVDYIS-UHFFFAOYSA-N trichloro(ethyl)silane Chemical compound CC[Si](Cl)(Cl)Cl ZOYFEXPFPVDYIS-UHFFFAOYSA-N 0.000 description 1
- SSBOTKQTCWQWMG-UHFFFAOYSA-N trichloro(nonyl)silane Chemical compound CCCCCCCCC[Si](Cl)(Cl)Cl SSBOTKQTCWQWMG-UHFFFAOYSA-N 0.000 description 1
- RCHUVCPBWWSUMC-UHFFFAOYSA-N trichloro(octyl)silane Chemical compound CCCCCCCC[Si](Cl)(Cl)Cl RCHUVCPBWWSUMC-UHFFFAOYSA-N 0.000 description 1
- ORVMIVQULIKXCP-UHFFFAOYSA-N trichloro(phenyl)silane Chemical compound Cl[Si](Cl)(Cl)C1=CC=CC=C1 ORVMIVQULIKXCP-UHFFFAOYSA-N 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 125000000025 triisopropylsilyl group Chemical group C(C)(C)[Si](C(C)C)(C(C)C)* 0.000 description 1
- NMEPHPOFYLLFTK-UHFFFAOYSA-N trimethoxy(octyl)silane Chemical compound CCCCCCCC[Si](OC)(OC)OC NMEPHPOFYLLFTK-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
1.有機半導体材料および脂肪族炭化水素を含む液状材料を基板に塗布する工程を含むことを特徴とする有機薄膜トランジスタの製造方法。
2.前記液状材料がさらに有機半導体材料溶解成分を含むことを特徴とする1に記載の有機薄膜トランジスタの製造方法。
3.前記基板が表面処理された基板であることを特徴とする1または2に記載の有機薄膜トランジスタの製造方法。
4.前記表面処理された基板の表面の水に対する接触角が70度以上であることを特徴とする3に記載の有機薄膜トランジスタの製造方法。
5.前記表面処理された基板の表面の水に対する接触角が90度以上であることを特徴とする4に記載の有機薄膜トランジスタの製造方法。
6.前記表面処理がシランカップリング剤による処理であることを特徴とする3〜5のいずれか1項に記載の有機薄膜トランジスタの製造方法。
7.前記脂肪族炭化水素が環状脂肪族炭化水素であることを特徴とする1〜6のいずれか1項に記載の有機薄膜トランジスタの製造方法。
8.前記環状脂肪族炭化水素がシクロヘキサンであることを特徴とする7に記載の有機薄膜トランジスタの製造方法。
9.前記有機半導体材料の数平均分子量が5000以下であることを特徴とする1〜8のいずれか1項に記載の有機薄膜トランジスタの製造方法。
10.前記有機半導体材料がヘテロ環を分子中に少なくとも2つ含むことを特徴とする1〜9のいずれか1項に記載の有機薄膜トランジスタの製造方法。
11.前記ヘテロ環がチオフェン環であることを特徴とする10に記載の有機薄膜トランジスタの製造方法。
12.1〜11のいずれか1項に記載の有機薄膜トランジスタの製造方法により作製されたことを特徴とする有機薄膜トランジスタ。
2 ソース電極
3 ドレイン電極
4 ゲート電極
5 絶縁層
6 支持体
7 ゲートバスライン
8 ソースバスライン
9 基板
10 TFTシート
11 有機TFT
12 出力素子
13 蓄積コンデンサ
14 垂直駆動回路
15 水平駆動回路
該チオフェン環はアルキル基などの置換基を有していても、また無置換のものでもよいが、分子内に置換基を有するチオフェン環が含まれることが好ましく、置換基を有するチオフェン環と無置換のチオフェン環の両者が含まれることがより好ましい。更に、前記チオフェン環が2つ以上連結していることが好ましく、連結するチオフェン環の数は2〜10が好ましい。
前記一般式(1)で表されるチオフェンオリゴマーについて説明する。
また、本発明において好ましく用いられるチオフェンオリゴマーに含まれるチオフェン環の環数は4〜40であるものが好ましいが、4〜20の範囲が更に好ましい。
本発明に用いられるチオフェンオリゴマーの末端基について説明する。
本発明に用いられるチオフェンオリゴマーは、構造中に、Head−to−Head構造を持たないことが好ましく、それに加えて、更に好ましくは、前記構造中に、Head−to−Tail構造、または、Tail−to−Tail構造を有することが好ましい。
本発明において、前記有機半導体材料を溶解又は分散し、かつ同時に液状材料の基板への親和性を高めることができる溶媒として、脂肪族炭化水素が必要である。脂肪族炭化水素としては、例えば、オクタン、4−メチルヘプタン、2−メチルヘプタン、3−メチルヘプタン、2,2−ジメチルヘキサン、2,3−ジメチルヘキサン、2,4−ジメチルヘキサン、2,5−ジメチルヘキサン、3,3−ジメチルヘキサン、3,4−ジメチルヘキサン、3−エチルヘキサン、2,2,3−トリメチルペンタン、2,2,4−トリメチルペンタン、2,3,3−トリメチルペンタン、2,3,4−トリメチルペンタン、2−メチル−3−エチルペンタン、3−メチル−3−エチルペンタン、デカン、2,2,3,3-テトラメチルヘキサン、2,2,5,5-テトラメチルヘキサン、3,3,5−トリメチルヘプタン、ノナン、2,2,5−トリメチルヘキサン、4−エチルヘプタン、2,3−ジメチルヘプタン、2−メチルオクタン、ドデカン、ヘキサン、2−メチルペンタン、3−メチルペンタン、2,2−ジメチルブタン、2,3−ジメチルブタン、ヘプタン、2−メチルヘキサン、3−メチルヘキサン、2,2−ジメチルペンタン、2,3−ジメチルペンタン、2,4−ジメチルペンタン、3,3−ジメチルペンタン、3−エチルペンタン、2,2,3−トリメチルブタン等の鎖状脂肪族炭化水素、シクロヘキサン、シクロペンタン、メチルシクロヘキサン、メチルシクロペンタン、p−メンタン、デカリン、シクロヘキシルベンゼン等の環状脂肪族炭化水素などを挙げることができるが、本発明はこれらに限定されるものではない。また、これらの脂肪族炭化水素は1種類あるいは2種類以上混合して用いてもよい。本発明に用いられる脂肪族炭化水素としては、環状脂肪族炭化水素が好ましく、シクロヘキサンがより好ましい。
液状材料中における有機半導体材料の含有量は、用いる脂肪族炭化水素の種類、また、後述する有機半導体材料溶解成分等の具体的選択によって変わってくるが、塗布によりこれ等液状材料を基板上に適用して、薄膜を形成させるためには、該材料中において有機半導体材料は、塗布の均一性の面から0.01〜10.0質量%、好ましくは0.1〜5.0質量%の範囲で溶解していることが好ましい。
本発明に係る基板とは、有機半導体を担持し得るものをいい、支持体または必要に応じ支持体上に電極もしくは絶縁膜を設けた支持体などが含まれる。
また、シランカップリング剤による処理を行う前に、基板(例えば、シリコン基板上に形成された熱酸化膜などの絶縁膜)表面に対して酸素プラズマ処理、UVオゾン処理などの親水化処理(表面に水酸基−OHを形成する処理)を行うことが、緻密で強固な自己組織化単分子膜を形成する上で好ましいことが一般的に知られており、前述した特許文献等にも記載されている。更に、一般的によく知られたラビング等の配向処理を施してもかまわない。
同図(a)は、支持体6上に、マスクを用いて金等を蒸着によりパターン形成することにより、あるいは、金属微粒子を含む層のパターンを形成した後、金属微粒子を含む層を加熱加圧して融着させるなどして、ソース電極2、ドレイン電極3を形成し、ソース、ドレイン電極間に有機半導体材料層1を形成し、その上にゲート絶縁層5を形成し、更にその上にゲート電極4を形成して有機TFTを形成したものである。
実施例1、3、4、10、19、21、比較例1、3
比抵抗0.02Ω・cmのn型Siウエハーに厚さ200nmの熱酸化膜を形成したものをゲート絶縁膜とし、基板を作製した。
比抵抗0.02Ω・cmのn型Siウエハーに厚さ200nmの熱酸化膜を形成した後、酸素プラズマ処理により表面の洗浄を行った。この熱酸化膜を形成したSiウエハーを表1に記載の表面処理材料(シランカップリング剤)のトルエン溶液(1%質量)に10分間浸漬後、トルエン洗浄、乾燥させることで、熱酸化膜の表面処理を行い、ゲート絶縁膜とし、基板を作製した。
(塗布性の評価)
実施例1〜22
次に、表1に記載の半導体材料、脂肪族炭化水素、必要に応じて有機半導体材料溶解成分を各々用いることで、有機半導体材料を含む液状材料(0.5質量%)を調製し、前記工程で得られた基板上にスピンコーターを用いて半導体材料を塗布した後、室温で乾燥させて、基板上に半導体層を形成した。このとき形成した半導体層の塗布性を評価した結果について表1に示した。
表1における有機半導体材料P−1には、US2003―164495号公報明細書に記載の例示化合物(3)を用いた。
塗布性は、基板上に基板に対する面積比で80〜100%の連続した塗布膜領域が形成され、目視で塗布欠陥がほとんど認められないものを◎、基板上に基板に対する面積比で80〜100%の連続した塗布膜領域が形成されているが、目視で塗布欠陥が認められるものを○、基板に対する面積比で塗布膜領域が80%以下のもの、あるいは、目視で全面的に明らかな塗布欠陥が認められるものを△、液状材料がはじかれて基板上に全く残らず、膜を形成できないものを×として評価した。
(有機薄膜トランジスタの作製)
実施例1〜22
更に、この膜の表面にマスクを用いて金を蒸着し、ソース電極およびドレイン電極を作製した。
実施例1〜22の脂肪族炭化水素の代わりに表1に記載の有機溶媒を用いた以外は、実施例1〜22と同様にして半導体層及び有機薄膜トランジスタを作製し、実施例1〜22と同様の評価をし、その結果についても表1に示した。
Claims (12)
- 有機半導体材料および脂肪族炭化水素を含む液状材料を基板に塗布する工程を含むことを特徴とする有機薄膜トランジスタの製造方法。
- 前記液状材料がさらに有機半導体材料溶解成分を含むことを特徴とする請求の範囲第1項に記載の有機薄膜トランジスタの製造方法。
- 前記基板が表面処理された基板であることを特徴とする請求の範囲第1または2項に記載の有機薄膜トランジスタの製造方法。
- 前記表面処理された基板の表面の水に対する接触角が70度以上であることを特徴とする請求の範囲第3項に記載の有機薄膜トランジスタの製造方法。
- 前記表面処理された基板の表面の水に対する接触角が90度以上であることを特徴とする請求の範囲第4項に記載の有機薄膜トランジスタの製造方法。
- 前記表面処理がシランカップリング剤による処理であることを特徴とする請求の範囲第3〜5項のいずれか1項に記載の有機薄膜トランジスタの製造方法。
- 前記脂肪族炭化水素が環状脂肪族炭化水素であることを特徴とする請求の範囲1〜6項のいずれか1項に記載の有機薄膜トランジスタの製造方法。
- 前記環状脂肪族炭化水素がシクロヘキサンであることを特徴とする請求の範囲第7項に記載の有機薄膜トランジスタの製造方法。
- 前記有機半導体材料の数平均分子量が5000以下であることを特徴とする請求の範囲第1〜8項のいずれか1項に記載の有機薄膜トランジスタの製造方法。
- 前記有機半導体材料がヘテロ環を分子中に少なくとも2つ含むことを特徴とする請求の範囲第1〜9項のいずれか1項に記載の有機薄膜トランジスタの製造方法。
- 前記ヘテロ環がチオフェン環であることを特徴とする請求の範囲第10項に記載の有機薄膜トランジスタの製造方法。
- 請求の範囲第1〜11項のいずれか1項に記載の有機薄膜トランジスタの製造方法により作製されたことを特徴とする有機薄膜トランジスタ。
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