JPWO2004051724A1 - Silica glass jig used in the process of manufacturing a semiconductor and its manufacturing method - Google Patents
Silica glass jig used in the process of manufacturing a semiconductor and its manufacturing method Download PDFInfo
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 41
- 239000002344 surface layer Substances 0.000 claims abstract description 40
- 239000000126 substance Substances 0.000 claims abstract description 20
- 239000002245 particle Substances 0.000 claims abstract description 19
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 54
- 239000006061 abrasive grain Substances 0.000 claims description 18
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 12
- 230000003746 surface roughness Effects 0.000 claims description 9
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 241001422033 Thestylus Species 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 239000010419 fine particle Substances 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 230000001154 acute effect Effects 0.000 claims description 3
- 238000007517 polishing process Methods 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 239000000243 solution Substances 0.000 claims 3
- 239000007864 aqueous solution Substances 0.000 claims 1
- 238000005422 blasting Methods 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 16
- 239000006227 byproduct Substances 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 13
- 239000010410 layer Substances 0.000 description 13
- 238000012360 testing method Methods 0.000 description 10
- 238000001312 dry etching Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- 238000001947 vapour-phase growth Methods 0.000 description 7
- 238000005488 sandblasting Methods 0.000 description 5
- 238000004380 ashing Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000012634 fragment Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000007524 flame polishing Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Surface Treatment Of Glass (AREA)
- Glass Melting And Manufacturing (AREA)
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
半導体を製造する工程で使用するシリカガラス治具において、その表面の一部又は全部に中心線平均粗さＲａで０．１〜２０μｍの凹凸が存在し、かつ軽微な表層エッチング処理に対しても表面状態の変化が小さいことを特徴とするシリカガラス治具であって、使用時に半導体素子を汚染するパーティクルの発生がなく、しかも使用を重ねても処理条件の変動の少ない。また、本発明のシリカガラス治具は、シリカガラスの表面に物理的表層除去手段と化学的表層除去手段による処理を交互に２回以上繰り返し適用すことで容易に製造できる。In a silica glass jig used in the process of manufacturing a semiconductor, a part or all of its surface has an unevenness of 0.1 to 20 μm in centerline average roughness Ra, and also for a slight surface etching process. It is a silica glass jig characterized by a small change in the surface state, and does not generate particles that contaminate the semiconductor element during use, and the processing conditions hardly change even when used repeatedly. In addition, the silica glass jig of the present invention can be easily manufactured by repeatedly applying the treatment by the physical surface layer removing means and the chemical surface layer removing means to the surface of the silica glass two or more times alternately.
Description
本発明は、半導体の製造工程で使用されるシリカガラス治具、さらに詳しくは表面に細な凹凸があるとともに軽微な表層エッチングに対して表面状態の変化が小さいシリカガラス治具およびその製造方法に関する。 The present invention relates to a silica glass jig used in a semiconductor manufacturing process, and more particularly, to a silica glass jig having a fine unevenness on the surface and a small change in surface state with respect to light surface etching, and a method of manufacturing the same .
シリカガラス治具は半導体素子の製造における拡散工程、気相成長工程、エッチング・アッシング工程などの様々な工程で使用されている。このシリカガラス治具の表面はサンドブラストや研削加工といった処理が施され凹凸をもった不透明に仕上げられたり、或は鏡面研摩や焼き仕上げと呼ばれる火炎研摩等で平滑で透明に仕上げられたものなど、用途などにより適宜選択されているが、洗浄などが容易で汚れにくい透明に仕上げられた表面を有する治具が多く使用されている。中でも、拡散工程、気相成長工程、特に気相成長工程ではＣＶＤ（Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ）法などで半導体素子に例えばポリシリコン膜を成長させるが、その際透明仕上げされたシリカガラス治具にもポリシリコン膜が副生成物として堆積し、それが剥離しパーティクルとなって半導体素子を汚染することが起こる。そのため、副生成物を定期的に除去する必要があった。その除去にはフッ化水素酸及び硝酸を含む溶液が一般的に用いられているが、平滑な治具の表面も同時にエッチングされて表面が粗れ、表面積等の表面状態の変化が起こり、急に副生成物の付着量が変動し、消費する気相反応ガスの消費量も変動し半導体素子へのポリシリコン膜の成長量の制御が困難となるなどの問題があった。そこで、治具表面にサンドブラスト加工で微細な凹凸を形成し、そこに積極的に副生成物を捕捉しパーティクルの発生を防止することが図られたが、今度は微細な凹凸の加工時に発生した加工塑性層やマイクロクラック等のダメージ部分からシリカガラスの微細な破片が使用時に飛散し半導体素子を汚染するパーティクルの発生が起こった。また、副生成物が厚くなるとシリカガラスとポリシリコンとの熱膨張差による破損が発生し、その防止のため、治具の使用前にガスエッチングやウエットエッチングによる洗浄を行なっているが、透明な表面を有する治具の場合と同様に定期的に副生成物を除去する必要があり、微細な凹凸面が同時にエッチングされ表面状態が変わるなどの問題があった。
上記問題点は半導体素子への拡散や気相成長工程にとどまらず、エッチング処理においても同様であった。すなわち、処理ガスを流しながらプラズマなどを利用しエッチングやアッシングを行う工程においても副生成物がシリカガラス治具に堆積し剥離しパーティクルを発生することがあり、ＣＶＤ等と同様にサンドブラストや研削加工により表面に微細な凹凸を形成し、積極的に副生成物を捕捉しパーティクルの発生を防止することが図られた。しかし、凹凸の加工時に発生した加工塑性層やマイクロクラック等のダメージ部分からプラズマによりシリカガラスの微細な破片が使用時に飛散し半導体素子を汚染するパーティクルになるなどの問題があった。特に、ドライエッチングでは、シリカガラス治具の表面もフッ化水素含有溶液処理と酷似したエッチングがなされ、表面の状態が大きく変わり、半導体素子のエッチング処理自体の制御を困難とするなどの問題があった。
上記問題を解決するため、機械加工した治具を、フッ化水素含有溶液でエッチングしマイクロクラックを開放させ、マイクロクラックフリーの面としたシリカガラス治具（特開平１０−５９７４４号公報）やシリカガラス治具表面を機械加工で凹凸にしたのち、フッ化水素とフッ化アンモニウムを含有する溶液で処理し、表面に２０〜３００μｍのエクボ状凹部と２０〜３０μｍの間隔で幅が０．５〜５０μｍの溝を形成し、かつ溝間及び溝内に幅１〜５０μｍ、高さ０．１〜１０μｍの小突起を均一に分散させたシリカガラス治具（特開平２００２−１０４８４３号公報）が提案された。しかしながら、実際の使用では前記治具はいずれも、使用により凹部が大きなすり鉢状になり急に副生成物の付着量が変わったり、凹凸が減少し、ある程度使用を続けると、剥離パーティクルが発生するなの欠点があった。
こうした現状に鑑み、本発明者等は鋭意研究を重ねた結果、シリカガラス治具の表面粗さを中心線平均粗さＲａで０．１〜２０μｍとし、かつ軽微な表層エッチング処理に対しても表面状態の変化が小さい面とすることで、副生成物の剥離やシリカガラスの微細な破片の飛散がなく、かつ処理ガスの消費の変化が少なく各工程での処理の制御が容易となることを見出した。そして前記シリカガラス治具が特定の物理的表層除去手段と特定の化学的表層除去手段とを交互に複数回繰り返すことで容易に製造できることをも見出して、本発明を完成したものである。すなわち
本発明は、使用時に半導体素子を汚染するパーティクルの発生がなく、かつ使用を重ねても処理条件を変動することがないシリカガラス治具を提供することを目的とする。
また、本発明は、上記シリカガラス治具の製造方法を提供することを目的とする。Silica glass jigs are used in various processes such as a diffusion process, a vapor phase growth process, and an etching / ashing process in the manufacture of semiconductor elements. The surface of this silica glass jig is treated with sand blasting or grinding to make it opaque with irregularities, or finished with a smooth and transparent finish such as flame polishing called mirror polishing or baking finish, etc. Although it is appropriately selected depending on the application and the like, many jigs having a transparent finished surface that is easy to clean and difficult to get dirty are used. In particular, in a diffusion process, a vapor phase growth process, particularly a vapor phase growth process, for example, a polysilicon film is grown on a semiconductor element by a CVD (Chemical Vapor Deposition) method. A silicon film is deposited as a by-product, which peels off and becomes particles, which contaminates the semiconductor element. Therefore, it was necessary to remove by-products regularly. For the removal, a solution containing hydrofluoric acid and nitric acid is generally used, but the surface of the smooth jig is also etched at the same time to roughen the surface, resulting in a change in surface condition such as surface area. In addition, the amount of attached by-products fluctuates, and the amount of gas phase reaction gas consumed also fluctuates, which makes it difficult to control the growth amount of the polysilicon film on the semiconductor element. Therefore, it was attempted to form fine irregularities on the jig surface by sandblasting and actively capture by-products there to prevent the generation of particles, but this time it occurred during the machining of fine irregularities. Fine particles of silica glass were scattered from damaged parts such as processed plastic layers and microcracks during use, generating particles that contaminated semiconductor elements. In addition, when the by-product becomes thick, damage due to the difference in thermal expansion between silica glass and polysilicon occurs. To prevent this, cleaning by gas etching or wet etching is performed before using the jig. As in the case of a jig having a surface, it is necessary to periodically remove by-products, and there is a problem that a fine uneven surface is etched at the same time to change the surface state.
The above problems are not limited to the diffusion to the semiconductor element and the vapor phase growth process, but the same is true in the etching process. That is, in the process of etching and ashing using plasma etc. while flowing process gas, by-products may accumulate on the silica glass jig and peel off to generate particles. As a result, fine irregularities were formed on the surface, and byproducts were actively captured to prevent generation of particles. However, there has been a problem that fine fragments of silica glass are scattered by using plasma from damaged portions such as processed plastic layers and microcracks generated during processing of irregularities and become particles that contaminate the semiconductor element during use. In particular, in dry etching, the surface of a silica glass jig is etched very similar to the treatment with a hydrogen fluoride-containing solution, the surface state changes greatly, and it is difficult to control the etching process of the semiconductor element itself. It was.
In order to solve the above problem, a machined jig is etched with a hydrogen fluoride-containing solution to release microcracks, and a silica glass jig (Japanese Patent Laid-Open No. 10-59744) or silica having a microcrack-free surface is used. After making the surface of the glass jig uneven by machining, the glass jig is treated with a solution containing hydrogen fluoride and ammonium fluoride, and the surface is 20-300 μm indentations and 20-30 μm apart at a width of 0.5- A silica glass jig (Japanese Patent Laid-Open No. 2002-104843) in which grooves of 50 μm are formed and small protrusions having a width of 1 to 50 μm and a height of 0.1 to 10 μm are uniformly dispersed between and within the grooves is proposed. It was done. However, in actual use, any of the above jigs has a large mortar shape due to use, and the amount of attached by-product suddenly changes or the unevenness is reduced. There was a drawback.
In view of such a current situation, the present inventors have conducted extensive research, and as a result, the surface roughness of the silica glass jig is set to 0.1 to 20 μm in the centerline average roughness Ra, and even for a slight surface etching process. By using a surface with a small change in surface condition, there is no separation of by-products or scattering of fine fragments of silica glass, and there is little change in processing gas consumption, making it easy to control processing in each process. I found. The present inventors have also found that the silica glass jig can be easily manufactured by alternately repeating a specific physical surface layer removing unit and a specific chemical surface layer removing unit a plurality of times, thereby completing the present invention. That is, an object of the present invention is to provide a silica glass jig that does not generate particles that contaminate a semiconductor element during use, and that does not change processing conditions even after repeated use.
Moreover, an object of this invention is to provide the manufacturing method of the said silica glass jig | tool.
本発明は、半導体を製造する工程で使用するシリカガラス治具において、その表面の一部又は全部に中心線平均粗さＲａで０．１〜２０μｍの凹凸が存在し、かつ軽微な表層エッチング処理に対しても表面状態の変化が小さいことを特徴とするシリカガラス治具およびその製造方法に係る。
本発明のシリカガラス治具は、例えば炉芯管、ウェーハ載置用ボート、エッチング・アッシング用チャンバー等、半導体素子を製造する工程で使用される治具であり、その表面にはその一部又は全部に中心線平均粗さＲａで０．１〜２０μｍの凹凸が存在し、かつ軽微な表層エッチング処理に対して表面状態の変化が小さい治具である。前記表面状態の変化の小ささは濃度３．０〜４．０％で液温が１７〜２３℃のフッ化水素酸溶液にて１５〜１７時間エッチング処理したものと、エッチング前との該表面のＪＩＳＢ０６０１に基づく中心線平均粗さを、触針部先端のＲが２〜１０μｍの範囲である触針式の表面粗さ測定装置にて測定し、その中心線平均粗さの変化率を５０％以下とするのがよい。つまり、実際のエッチング、例えばプラズマガスによるエッチングでシリカガラス治具の表面が変化するが、具体的には初期の段階でＲａが大きくなるが、その変化の大きさは前記表面状態の変化の小ささを示す中心線平均粗さの変化率と関係し、その変化率が５０％以下であると実使用においてもＲａの変化は小さいままである。前記フッ化水素酸溶液の濃度が前記範囲未満では変化に時間がかかり過ぎて効率的でなく、前記範囲を超えると初期の変化の速度が速く判定時間が短くなるものの、測定物を溶液から取り出して、表面を水で置換しエッチングを停止するまでに誤差が生じる。また、フッ化水素酸溶液の温度１７〜２３℃は、その温度が最も一般的であることから採用する。
さらに、エッチング処理時間１５〜１７時間は、判定のための精度の高い変化率を得るための時間である。前記変化率の測定にはＪＩＳＢ０６０１に基づく触針部先端のＲが２〜１０μｍである触針式の表面測定装置を使用することが重要である。前記触針部先端のＲが２〜１０μｍである触針式表面測定装置を使用する理由は、実使用時におけるシリカガラス治具の表面状態の変化が、その初期状態面に存在するマイクロクラックがエッチング処理により拡大したり、或はその表面のギザギザの凹凸がエッチング処理により形状変化を起したりして大きく変わる。それを非接触型の測定装置、例えばレーザーの反射光を使用する測定装置では、測定形状から算出される中心線平均粗さは正しいものの、使用中に副生成物により直に埋まってしまうような狭い谷部などをも検出し、使用時に処理条件が変わるような大きな状態変化が解りずらいことによる。この触針式表面測定装置を使用する測定法を用いることで、凸部の変化は勿論、特に副生成物の付着状況に敏感な谷部の変化が捕らえ易くなる。前記触針部先のＲが２〜１０μｍであるのは、細い谷を検出しない範囲である２μｍから、実質的な凹凸が判定できる１０μｍの範囲とするもので、実際の使用時に即した表面状態の変化が容易に測定できる。
シリカガラス治具の実際の使用において、使用プロセスに応じた副生成物の適正捕捉量があり、例えばＣＶＤプロセスの場合には、ウエハー上の膜成長の余剰ガスが、プラズマ等によるドライエッチング工程の場合には、エッチングされた反応ガスが、シリカガラス治具の表面を粗くすることにより、より多く副生成物として治具上に捕捉堆積させることになる。副生成物の堆積があまり大量であるとウエハー上に膜を形成するガスが必要以上に減少し膜の成長やエッチングが阻害される。その一方、捕捉が少ないと剥離等によりパーティクルが発生し、また、使用時におけるエッチングによるシリカガラス治具の粗さや状態が初期状態から変化し前述と同様な問題を提起する。シリカガラス治具の表面の凹凸は、鋸状の凹凸や不規則で鋭角な山谷が連続するギザギザや台形状の凸部が並ぶものがあるが、いずれも、実使用時のエッチング処理により縁部が尖った大きなお椀状の凹凸となり、副生成物の捕捉能力等、初期状態から大きく変化する。また、初期の状態からお椀状の凹凸を形成した場合、表面積が小さいため、副生成物の捕捉能力が実用に耐えられず、さらにお椀状の縁部の尖った部分が脱落し、パーティクルを発生する。そのため、本発明のシリカガラス治具にあっては、その表面の一部又は全部に中心線平均粗さＲａで０．１〜２０μｍの凹凸を存在させている。この凹凸の存在により副生成物の捕捉が確となり膜の剥離を抑制できる。好ましくは前記凹凸を大柄な凹凸とその表面に微細な浅いお椀状の凹部を形成した多重構造とするのがよい。この多重構造を有することで、軽微なエッチングでは変化しづらい大柄な波状の凹凸により必要な厚みの副生成物を捕捉できる凹凸を確保できる。
さらにその大柄な波状の凹凸に微細な浅いお椀状の凹凸を存在させることで捕捉した副生成物を剥離させることなく固定でき、安定した表面を有する治具が得られる。特に望ましくは、浅いお椀状の凹部が、凹部の縁径より底の深さが小で、かつ隣り合った凹部間の境界の縁部が鋭角な凸でないことである。これにより凹部が使用時にエッチングされても、縁部付近も均等に減損し、隣り合った凹部との間に鋭角で脱落しやすい突起状の縁取りが発生するのを防止できる。
本発明のシリカガラス治具は、物理的表層除去手段と化学的表層除去手段とを交互に２回以上繰り返し適用することで製造できる。好ましくは物理的表層除去手段で形成する表面粗さが順次小さくなるような処理条件を選択するのがよい。
上記物理的表層除去手段とは、固定砥粒砥石による研削処理、遊離砥粒による研摩処理、遊離砥粒によるブラスト処理、液体ホーニングによる処理又はそれらの組合せをいう。そして、固定砥粒砥石はとしては、具体的にレジンボンド型ダイヤモンド砥石などが挙げられ、遊離砥粒としてはシリカやＳｉＣが挙げられ、液体ホーニングによる処理としては、遊離砥粒を液体に分散し吹き付ける処理などが挙げられる。この物理的表層除去手段では、シリカガラス表面に加工塑性層やマイクロクラック等のダメージ層が形成され治具の使用時にシリカガラスの微細な破片が飛散し、パーティクルの発生源となる。その上、エッチング処理工程時に不均質な侵食が起こり、不完全なマイクロクラックの開放による深い溝ができ、表面状態が大きく変化し、ＣＶＤ工程やエッチング工程などの処理条件を変動させる必要が生じる。しかし、前記物理的表層除去手段に続いて化学的表層除去手段を適用することで加工塑性層の除去やマイクロクラックの開放がなされパーティクルの発生がすくなくなる上に、表面状態の変動も少なくなるが、化学的表層除去手段による表層の除去量が少ないと加工塑性層の除去やマイクロクラックの開放が十分に行なわれない。そこで、物理的表層除去手段で形成した加工塑性層やマイクロクラックのあるダメージ層の除去を十分に行おうとすると、大きな溝やお椀状又はすり鉢状の凹部で外周の縁が尖ったへこみが多くできる。特に外周の縁の尖った部分からは微細なガラスの破片が飛散し易い。前記外周の縁が尖った凹みも発生しない処理法として前記特許文献２に記載の処理法があるが、この方法では物理的表層除去手段で形成した加工塑性層やマイクロクラックなどのダメージ層の除去が十分にできず、エッチング処理時の表面状態の変化が大きくなる。また、実使用時のエッチングが進行すると外周の縁の尖った凹部が多数出現し、パーティクルを発生し易い。
本発明の製造方法にあっては、最初の物理的表層除去手段の後に化学的表層除去手段により表面に有るマイクロクラックが開放された表面、例えばすり鉢やお椀状の凹凸が多数ある表面を形成した後に、再度物理的表層除去手段を適用し、凹凸の鋭角な部分を波状にならし、さらに化学的表層除去手段を適用することにより、比較的平坦な面に残留する加工塑性層や僅かに残ったマイクロクラックを開放するものである。前記物理的表層除去手段および化学的表層除去手段は交互に２回以上繰り返し適用するのがよい。これにより使用中のシリカガラス治具の表面状態の変化が小さい治具が得られる。前記物理的表層除去手段はより好ましくは最初より表面粗さが小さくなるようにつぎの物理的表層除去手段を選択するのがよい。これにより形成した大柄な波状の凹凸の形状が大きく変化しない範囲で次の物理的表層除去手段のダメージやマイクロクラックのみを、容易に次の化学的表層除去手段で開放できるだけでなく、大柄な波状の凹凸の表面にお椀状の凹部を多数有する多重構造とすることができる。例えば最初比較的粒度の大きな砥粒を用い、次の除去手段では比較的粒度の小さい砥粒を用いるなどである。その場合、固定砥粒砥石による研削処理に続いて遊離砥粒による研摩処理などを組合せる物理的表層除去手段の組合せも採用できる。例えば最初＃１２０のダイヤモンド砥粒を含む固定砥粒砥石を用いた後＃６００のＳｉＣ遊離砥粒によるサンドブラスト処理を適用するなどである。
本発明で使用する化学的表層除去手段としては、フッ化水素を含有する溶液による処理が挙げられるが、好ましくは、最後の物理的表層除去手段後の化学的表層除去手段には、前記溶液にさらにフッ化アンモニウムを含有させるのがよい。これにより、仕組みについては明確でないが、例えば化学的表層除去手段により形成されたお椀状やすり鉢状の凹部の外周縁部にできた尖った突起やその他の鋭角な突起が除去され滑らかな凹凸面とすることができる。これは、フッ化水素とフッ化アンモニウム及びシリカガラスが反応してできた結晶が、例えばお椀状の底部に良く発生し、突起部には発生しないか突起部を吸収した結晶が直ぐに離脱し、結果として突起部が選択的にエッチング除去され、鋭角な部分を持たない丸みを帯びた形態になるものと考えられる。さらに好ましくは、前記フッ化水素を含有する溶液に粒径が１０〜２００μｍの樹脂、シリカ又はセラミックのいずれか又はその組合せの微粒子を分散させるのがよい。この微粒子を分散させることで治具表面のダメージ層の除去が容易で、かつ微細な凹凸の形成能が高くなり、製造手順を簡素化できる。さらに超音波振動や攪拌手段を付加することで一段と処理の効率化が図られる。
本発明のシリカガラス治具は、その使用時にパーティクルの発生が少ない上に、使用を重ねても処理条件が変動することがほとんどなく、安定に高品質の半導体素子の処理ができる効果を奏する。しかも、前記シリカガラス治具は特定の物理的表層除去手段と化学的表層除去手段とを２回以上繰り返し適用することにより容易に製造でき、その工業的価値は高いものがある。In the silica glass jig used in the process of manufacturing a semiconductor, the present invention has a slight surface layer etching treatment in which unevenness of 0.1 to 20 μm exists in a part or all of the surface with a centerline average roughness Ra. Further, the present invention relates to a silica glass jig characterized by having a small change in surface state and a method for producing the same.
The silica glass jig of the present invention is a jig used in a process of manufacturing a semiconductor element, such as a furnace core tube, a wafer mounting boat, an etching / ashing chamber, etc. It is a jig that has unevenness of 0.1 to 20 μm in center line average roughness Ra in all and has a small change in surface state with respect to a slight surface layer etching process. The change in the surface state is as small as 3.0 to 4.0% in the etching process with a hydrofluoric acid solution having a liquid temperature of 17 to 23 ° C. for 15 to 17 hours and before the etching. The center line average roughness based on JISB0601 was measured with a stylus type surface roughness measuring device in which R at the tip of the stylus part was in the range of 2 to 10 μm, and the change rate of the center line average roughness was 50. % Or less. That is, the surface of the silica glass jig is changed by actual etching, for example, etching by plasma gas. Specifically, Ra increases at an early stage, but the magnitude of the change is small in the change of the surface state. In relation to the change rate of the centerline average roughness indicating the roughness, if the change rate is 50% or less, the change in Ra remains small even in actual use. If the concentration of the hydrofluoric acid solution is less than the above range, the change takes too much time and is not efficient. If the concentration exceeds the above range, the initial change speed is high and the determination time is short, but the measurement object is taken out from the solution. Thus, an error occurs until the surface is replaced with water and etching is stopped. Further, the temperature of 17 to 23 ° C. of the hydrofluoric acid solution is adopted because the temperature is most common.
Furthermore, the etching processing time of 15 to 17 hours is a time for obtaining a highly accurate change rate for determination. For the measurement of the rate of change, it is important to use a stylus type surface measuring device in which R at the tip of the stylus part is 2 to 10 μm based on JISB0601. The reason for using a stylus type surface measuring device in which R at the tip of the stylus part is 2 to 10 μm is that the change in the surface state of the silica glass jig during actual use is caused by microcracks present in the initial state surface. Enlargement is caused by the etching process, or jagged irregularities on the surface thereof change greatly due to a shape change caused by the etching process. In a non-contact type measuring device, for example, a measuring device using reflected light of a laser, the center line average roughness calculated from the measured shape is correct, but it is directly buried by a by-product during use. This is because even a narrow valley portion is detected, and it is difficult to understand a large state change in which processing conditions change during use. By using the measuring method using this stylus type surface measuring device, it is easy to capture not only the change of the convex part but also the change of the valley part particularly sensitive to the adhesion state of the by-product. The R of the tip of the stylus part is 2 to 10 μm from 2 μm, which is a range where thin valleys are not detected, to 10 μm where substantial unevenness can be determined. Can be easily measured.
In the actual use of the silica glass jig, there is an appropriate amount of by-product trapped according to the process used. For example, in the case of a CVD process, excess gas for film growth on the wafer is caused by plasma or the like in a dry etching process. In some cases, the etched reaction gas causes the surface of the silica glass jig to be roughened, and more is trapped and deposited on the jig as a by-product. If the amount of by-product deposited is too large, the gas for forming a film on the wafer is reduced more than necessary, and the growth and etching of the film are hindered. On the other hand, if the amount of trapping is small, particles are generated due to peeling or the like, and the roughness and state of the silica glass jig due to etching during use change from the initial state, thereby raising the same problem as described above. The surface irregularities of the silica glass jig include saw-shaped irregularities, jagged edges with irregular and sharp peaks and valleys, and trapezoidal convex parts, all of which are edged by etching during actual use. It becomes a large bowl-shaped unevenness with sharp points, and the byproduct trapping ability and the like greatly change from the initial state. In addition, when the bowl-shaped irregularities are formed from the initial state, the surface area is small, so the byproduct capture ability cannot be practically used, and the sharp edges of the bowl-shaped edge fall off, generating particles. To do. Therefore, in the silica glass jig of the present invention, unevenness having a centerline average roughness Ra of 0.1 to 20 μm is present on a part or all of the surface thereof. The presence of the unevenness ensures the capture of by-products and suppresses the peeling of the film. Preferably, the unevenness has a multiple structure in which large unevenness and a fine shallow bowl-shaped recess are formed on the surface. By having this multiple structure, it is possible to secure unevenness capable of capturing a by-product having a required thickness due to large wavy unevenness that is difficult to change by light etching.
Further, by making the large wavy irregularities have fine shallow bowl-shaped irregularities, the captured by-products can be fixed without peeling, and a jig having a stable surface can be obtained. It is particularly desirable that the shallow bowl-shaped recess has a bottom depth smaller than the edge diameter of the recess, and that the edge of the boundary between adjacent recesses is not an acute convex. Thus, even if the recess is etched during use, the vicinity of the edge is also uniformly damaged, and it is possible to prevent the occurrence of a protruding edging that is easy to drop off between adjacent recesses.
The silica glass jig of the present invention can be produced by repeatedly applying the physical surface layer removing means and the chemical surface layer removing means alternately twice or more. Preferably, the processing conditions are selected so that the surface roughness formed by the physical surface layer removing means decreases sequentially.
The physical surface layer removing means refers to a grinding process using a fixed abrasive wheel, a polishing process using free abrasive grains, a blast process using free abrasive grains, a process using liquid honing, or a combination thereof. As the fixed abrasive grindstone, specifically, a resin bond type diamond grindstone is exemplified. As the free abrasive grain, silica or SiC is exemplified. As the treatment by liquid honing, the free abrasive grain is dispersed in a liquid. For example, a spraying process. In this physical surface layer removing means, a damage layer such as a processed plastic layer or a microcrack is formed on the surface of the silica glass, and fine fragments of the silica glass are scattered when the jig is used, which becomes a generation source of particles. In addition, inhomogeneous erosion occurs during the etching process, deep grooves are formed due to incomplete opening of microcracks, the surface state changes greatly, and it is necessary to change processing conditions such as the CVD process and the etching process. However, by applying a chemical surface layer removing means subsequent to the physical surface layer removing means, the processing plastic layer is removed and the microcracks are released, so that the generation of particles is reduced and the fluctuation of the surface state is reduced. If the removal amount of the surface layer by the chemical surface layer removing means is small, the processed plastic layer and the microcracks are not sufficiently removed. Therefore, if the processing plastic layer formed by the physical surface layer removing means and the damaged layer with microcracks are sufficiently removed, the outer periphery has many sharp dents with large grooves, bowl-shaped or mortar-shaped recesses. . In particular, fine glass fragments are likely to scatter from the sharp edge of the outer periphery. There is a processing method described in Patent Document 2 as a processing method that does not generate a dent with a sharp edge on the outer periphery. In this method, however, a damaged layer such as a processed plastic layer or a microcrack formed by a physical surface layer removing means is removed. Is not sufficient, and the change in the surface state during the etching process becomes large. In addition, when etching during actual use proceeds, a large number of concave portions with sharp edges on the outer periphery appear and particles are easily generated.
In the manufacturing method of the present invention, after the first physical surface layer removing means, a surface where the microcracks on the surface are opened by the chemical surface layer removing means, for example, a surface having many mortars and bowl-shaped irregularities was formed. Later, the physical surface layer removing means is applied again, the sharp portions of the irregularities are waved, and the chemical surface layer removing means is further applied, so that the processed plastic layer remaining on the relatively flat surface or slightly remains. The micro crack is opened. The physical surface layer removing unit and the chemical surface layer removing unit are preferably repeatedly applied two or more times alternately. Thereby, the jig | tool with a small change of the surface state of the silica glass jig | tool in use is obtained. More preferably, the physical surface layer removing means is selected as the next physical surface layer removing means so that the surface roughness is smaller than the first. As long as the shape of the large wavy irregularities formed thereby does not change significantly, not only the next physical surface removal means damage and micro cracks can be easily released by the next chemical surface removal means, but also the large wavy shapes It is possible to obtain a multiple structure having a large number of bowl-shaped recesses on the uneven surface. For example, abrasive grains having a relatively large grain size are used first, and abrasive grains having a relatively small grain size are used in the next removing means. In that case, a combination of physical surface removal means that combines a grinding process with a fixed abrasive grindstone followed by a polishing process with loose abrasive grains can also be employed. For example, after first using a fixed abrasive wheel containing # 120 diamond abrasive grains, sandblasting with # 600 SiC loose abrasive grains is applied.
Examples of the chemical surface layer removing means used in the present invention include treatment with a solution containing hydrogen fluoride. Preferably, the chemical surface layer removing means after the last physical surface layer removing means includes the above solution. Furthermore, it is preferable to contain ammonium fluoride. As a result, the mechanism is not clear, but for example, sharp protrusions and other sharp protrusions formed on the outer peripheral edge of the bowl-shaped mortar-shaped recess formed by the chemical surface layer removing means are removed, and the smooth uneven surface It can be. This is because the crystals formed by the reaction of hydrogen fluoride with ammonium fluoride and silica glass often occur, for example, at the bottom of the bowl, and the crystals that do not occur on the protrusions or absorb the protrusions are released immediately, As a result, it is considered that the protrusion is selectively removed by etching, and a rounded shape having no acute angle portion is obtained. More preferably, fine particles of a resin having a particle diameter of 10 to 200 μm, silica, ceramic, or a combination thereof are dispersed in the hydrogen fluoride-containing solution. Dispersion of the fine particles facilitates removal of the damaged layer on the jig surface, increases the ability to form fine irregularities, and simplifies the manufacturing procedure. Furthermore, the processing efficiency can be further improved by adding ultrasonic vibration and stirring means.
The silica glass jig of the present invention produces less particles during use, and the processing conditions hardly change even after repeated use, and has the effect of stably processing a high-quality semiconductor element. Moreover, the silica glass jig can be easily manufactured by repeatedly applying a specific physical surface layer removing means and a chemical surface layer removing means twice or more, and has a high industrial value.
第１図は、実施例１のドライエッチング用治具表面をマイクロスコープで観察した５００倍の写真である。
第２図は、実施例１のドライエッチング用治具表面を３．５質量％のフッ化水素酸に１６時間浸漬した後でマイクロスコープで観察した５００倍の写真である。
第３図は、実施例１のドライエッチング用治具表面を走査電子顕微鏡で観察した５００倍の写真である。
第４図は、実施例２のウエハーボートを走査電子顕微鏡で観察した２００倍の写真である。
第５図は、実施例２のウエハーボートを走査電子顕微鏡で観察した１，０００倍の写真である。
第６図は、実施例２のウエハーボートを２０℃、３．５％フッ化水素酸溶液で１６時間のエッチングテストを行った後のＳＥＭで観察した２００倍の写真である。
第７図は、実施例２のウエハーボートを２０℃、３．５％フッ化水素酸溶液で１６時間のエッチングテストを行った後のＳＥＭで観察した１０００倍の写真である。
第８図は、比較例２のウエハーボートをＳＥＭで観察した２００倍の写真である。
第９図は、比較例２のウエハーボートをＳＥＭで観察した１０００倍の写真である。
第１０図は、比較例２のウエハーボートを２０℃、３．５％フッ化水素酸溶液で１６時間のエッチングテストを行った後のＳＥＭで観察した２００倍の写真である。
第１１図は、比較例２のウエハーボートを２０℃、３．５％フッ化水素酸溶液で１６時間のエッチングテスト後のウエハーボートをＳＥＭで観察した１，０００倍の写真である。FIG. 1 is a 500 × photograph of the surface of the dry etching jig of Example 1 observed with a microscope.
FIG. 2 is a 500 × photograph observed with a microscope after the surface of the dry etching jig of Example 1 was immersed in 3.5% by mass of hydrofluoric acid for 16 hours.
FIG. 3 is a 500 × photograph of the surface of the dry etching jig of Example 1 observed with a scanning electron microscope.
FIG. 4 is a 200 × photograph of the wafer boat of Example 2 observed with a scanning electron microscope.
FIG. 5 is a 1,000 times photograph of the wafer boat of Example 2 observed with a scanning electron microscope.
FIG. 6 is a 200 × photograph of the wafer boat of Example 2 observed by SEM after performing an etching test for 16 hours with a 3.5% hydrofluoric acid solution at 20 ° C.
FIG. 7 is a 1000 × photograph of the wafer boat of Example 2 observed by SEM after performing an etching test for 16 hours with a 3.5% hydrofluoric acid solution at 20 ° C.
FIG. 8 is a 200 × photograph of the wafer boat of Comparative Example 2 observed with an SEM.
FIG. 9 is a 1000 × photograph of the wafer boat of Comparative Example 2 observed with an SEM.
FIG. 10 is a 200 × photograph of the wafer boat of Comparative Example 2 observed by SEM after performing an etching test for 16 hours with a 3.5% hydrofluoric acid solution at 20 ° C.
FIG. 11 is a 1,000 times photograph of the wafer boat of Comparative Example 2 observed with an SEM after an etching test for 16 hours with a 3.5% hydrofluoric acid solution at 20 ° C.
次に本発明の実施例について述べるがこれによって本発明はなんら限定されるものではない。なお、以下の実施例１及び比較例１の中心線平均粗さＲａは、表面粗さ計（東京精密（株）製Ｓｕｒｆｃｏｍ３００Ｂ）により測定した。それ以外の実施例等では、（株）ミツトヨ製の表面粗さ計（ＳＪ−４００）を使用した。 Next, examples of the present invention will be described, but the present invention is not limited thereto. In addition, the centerline average roughness Ra of Example 1 and Comparative Example 1 below was measured with a surface roughness meter (Surfcom 300B manufactured by Tokyo Seimitsu Co., Ltd.). In other examples, etc., a surface roughness meter (SJ-400) manufactured by Mitutoyo Corporation was used.
直径３００ｍｍの石英ガラス表面を＃３００のダイヤモンド砥粒を含むレジンボンド砥石で研削し円板状のドライエッチング用治具を作成した。得られた治具の中心線平均粗さＲａは１．２μｍであった。この治具を５０％のフッ化水素酸溶液に１０分間浸漬した。得られた治具の中心線平均粗さＲａは２．８μｍであった。続いて該治具を＃１０００のＳｉＣ砥粒のレジンボンド砥石で表面除去を行い、中心線平均粗さＲａを０．５μｍとし、さらに、フッ化水素１５質量％、フッ化アンモニウム１５質量％、酢酸５０質量％及び水とからなる処理液で１時間処理した。その時の中心線平均粗さＲａは１．４μｍであった。前記治具を２０℃、３．５質量％のフッ化水素酸溶液に浸漬しＲａの変化を調べたところ、表１のとおりであった。前記０時間時のマイクロスコープで観察した表面写真を図１に、１６時間エッチング処理した後のマイクロスコープで観察した表面写真を図２に示す。さらに、０時間時の走査電子顕微鏡で観察した写真を図３に示す。
比較例１
実施例１と同様の石英ガラス治具を＃３００のダイヤモンド砥粒を含むレジンボド砥石で研削し円板状のドライエッチング用治具を作成した。得られた治具の中心線平均粗さＲａは１．２μｍであった。この治具を次いで１０％のフッ化水素酸溶液に１０分間浸漬した。その時のＲａは１．３μｍであった。この治具について実施例１と同様に３．５質量％のフッ化水素酸による表面粗さの変化を調べたところ、表１のとおりであった。
Comparative Example 1
A quartz glass jig similar to that in Example 1 was ground with a resin-bodied grindstone containing # 300 diamond abrasive grains to produce a disk-shaped dry etching jig. The center line average roughness Ra of the obtained jig was 1.2 μm. This jig was then immersed in a 10% hydrofluoric acid solution for 10 minutes. Ra at that time was 1.3 μm. When the jig was examined for changes in surface roughness caused by 3.5% by mass of hydrofluoric acid in the same manner as in Example 1, it was as shown in Table 1.
直径１５０ｍｍのシリコンウエハーに対応する縦型の気相成長用ウエハボートを作成した。前記ウエハボートを＃１５０の炭化珪素砥粒でサンドブラスト処理を行い、その後１５％のフッ化水素酸溶液にて２０分処理した後にさらに、＃６００の炭化珪素砥粒でサンドブラスト処理を行い、続けてフッ化水素１４質量％、フッ化アンモニウム１２質量％及び水からなる処理液にて１時間処理した。得られたウエハボートの表面を走査電子顕微鏡（ＳＥＭ）で撮影した。その結果を第４、５図に示す。該ウエハボート表面の粗さは中心線平均粗さＲａで２．１μｍであった。第４、５図にみるように大柄な波状の凹凸の表面に浅い凹部が形成された多重構造であった。前記ウエハーボートを２０℃、３．５％フッ化水素酸溶液で１６時間のエッチングテストを行った。テスト後のウエハーボートの表面をＳＥＭで撮影した写真を第６、７図に示す。前より大柄な波状の凹部が若干広くなって数を減少させているものの多重構造であった。この時のＲａは２．１μｍであった。さらに、前記ウエハーボートを、実際の窒化珪素の気相成長工程に使用し、２μｍの膜を堆積させた。前記成長工程での積算成長毎に、４％のフッ化水素酸溶液で１時間の洗浄を５回繰り返した。使用後の表面のＲａは２．５μｍであった。
比較例２
実施例２と同様のウエハーボートに、＃１５０の炭化珪素砥粒でサンドブラスト処理を行い、さらに、＃６００の炭化珪素砥粒でサンドブラスト処理を行った。次に、１０％のフッ化水素酸溶液で１時間の処理を行った。得られたウエハボートの表面を走査電子顕微鏡（ＳＥＭ）で撮影した。その結果を図８、９に示す。ウエハボートの粗さは中心線平均粗さＲａで２．２μｍであった。このウエハーボートについて、実施例２と同様に２０℃、３．５％フッ化水素酸溶液で１６時間のエッチングテストを行った。テスト後のウエハーボートの表面をＳＥＭで撮影した写真を１０、１１図に示すが、大きな凹状で縁部が鋭角な凹みが連続する図６の表面とは大きく異なり、Ｒａは４．８μｍであった。さらに、前記ウエハーボートを、実際の窒化珪素の気相成長工程に使用し、２μｍの膜の積算成長毎に、４％のフッ化水素酸溶液で１時間の洗浄を５回繰り返した。使用後の表面のＲａは５．１μｍであった。また、３回目から急激なウエハー上に成長する膜厚が減少し、また、処理ウエハーの上のパーティクルの増加がみられた。A vertical type vapor phase growth wafer boat corresponding to a silicon wafer having a diameter of 150 mm was prepared. The wafer boat was sandblasted with # 150 silicon carbide abrasive grains, then treated with a 15% hydrofluoric acid solution for 20 minutes, and further sandblasted with # 600 silicon carbide abrasive grains. It was treated for 1 hour with a treatment solution consisting of 14% by mass of hydrogen fluoride, 12% by mass of ammonium fluoride and water. The surface of the obtained wafer boat was photographed with a scanning electron microscope (SEM). The results are shown in FIGS. The surface roughness of the wafer boat was 2.1 μm in terms of centerline average roughness Ra. As shown in FIGS. 4 and 5, it was a multiple structure in which shallow concave portions were formed on the surface of large wavy irregularities. The wafer boat was subjected to an etching test with a 3.5% hydrofluoric acid solution at 20 ° C. for 16 hours. FIGS. 6 and 7 show photographs taken by SEM of the surface of the wafer boat after the test. It was a multi-layer structure although the number of wave-like concave portions larger than before was slightly widened to reduce the number. At this time, Ra was 2.1 μm. Further, the wafer boat was used in an actual silicon nitride vapor phase growth process to deposit a 2 μm film. For each cumulative growth in the growth step, washing for 1 hour with a 4% hydrofluoric acid solution was repeated 5 times. The surface Ra after use was 2.5 μm.
Comparative Example 2
The same wafer boat as in Example 2 was subjected to sand blasting treatment with # 150 silicon carbide abrasive grains, and further subjected to sand blasting treatment with # 600 silicon carbide abrasive grains. Next, treatment was performed for 1 hour with a 10% hydrofluoric acid solution. The surface of the obtained wafer boat was photographed with a scanning electron microscope (SEM). The results are shown in FIGS. The roughness of the wafer boat was 2.2 μm in terms of centerline average roughness Ra. This wafer boat was subjected to an etching test for 16 hours with a 3.5% hydrofluoric acid solution at 20 ° C. in the same manner as in Example 2. 10 and 11 show photographs of the surface of the wafer boat after the test taken with an SEM, which differs greatly from the surface of FIG. 6 in which the concaves having large concave shapes and sharp edges are continuous, and Ra is 4.8 μm. It was. Further, the wafer boat was used in an actual silicon nitride vapor phase growth process, and for each cumulative growth of a film having a thickness of 2 μm, washing with a 4% hydrofluoric acid solution for 1 hour was repeated five times. The surface Ra after use was 5.1 μm. Further, the film thickness growing on the wafer abruptly decreased from the third time, and the increase of particles on the treated wafer was observed.
本発明のシリカガラス治具は、使用時に半導体素子を汚染するパーティクルの発生がなく、かつ使用を重ねても処理条件が変動することがないので、炉芯管、ウェーハ載置用ボート、エッチング・アッシング用チャンバー、リング、プレートとして有用に使用できる。 Since the silica glass jig of the present invention does not generate particles that contaminate semiconductor elements during use, and the processing conditions do not change even after repeated use, the furnace core tube, wafer mounting boat, etching It can be usefully used as an ashing chamber, ring, or plate.
Claims (11)
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| JP2002351439 | 2002-12-03 | ||
| PCT/JP2003/015420 WO2004051724A1 (en) | 2002-12-03 | 2003-12-02 | Silica glass jig used in process for manufacturing semiconductor and method of manufacturing silica glass jig |
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| JP5026816B2 (en) * | 2007-02-26 | 2012-09-19 | 東ソー・クォーツ株式会社 | Quartz glass jig and manufacturing method thereof |
| JP6326210B2 (en) * | 2013-09-30 | 2018-05-16 | テクノクオーツ株式会社 | Quartz glass part and method for producing quartz glass part |
| CN108594342B (en) * | 2013-12-19 | 2020-09-25 | 康宁股份有限公司 | Textured surfaces for display applications |
| WO2016060165A1 (en) * | 2014-10-17 | 2016-04-21 | 旭硝子株式会社 | Transparent member, method for manufacturing transparent member and method for evaluating degree of soiling of surface of transparent member |
| KR102581501B1 (en) | 2021-04-20 | 2023-09-26 | 주식회사 금강쿼츠 | Quartz glass surface treatment method and quartz glass prepared thereof |
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| JPH11130451A (en) * | 1997-10-31 | 1999-05-18 | Shinetsu Quartz Prod Co Ltd | Quartz glass jig for semiconductor heat treatment apparatus |
| JP2001089198A (en) * | 1999-09-22 | 2001-04-03 | Asahi Glass Co Ltd | Silica glass jig for semiconductor device and method for producing the same jig |
| KR100547743B1 (en) * | 2000-09-28 | 2006-01-31 | 신에쯔 세끼에이 가부시키가이샤 | Silica Glass Jig for Semiconductor Industry and Manufacturing Method Thereof |
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