JPS649617A - Exposure method - Google Patents

Exposure method

Info

Publication number
JPS649617A
JPS649617A JP62164005A JP16400587A JPS649617A JP S649617 A JPS649617 A JP S649617A JP 62164005 A JP62164005 A JP 62164005A JP 16400587 A JP16400587 A JP 16400587A JP S649617 A JPS649617 A JP S649617A
Authority
JP
Japan
Prior art keywords
wafer
blinded
region
reticle
direct drawing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62164005A
Other languages
Japanese (ja)
Inventor
Toshiyuki Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62164005A priority Critical patent/JPS649617A/en
Publication of JPS649617A publication Critical patent/JPS649617A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To increase the number of device chips, which can be provided from one sheet of a wafer, by blinding either region of a device pattern, which is formed on A reticle, or a wafer alignment mark region for direct drawing, of a charged beam, exposing only the pattern of the other region, and performing said operations in the predetermined sequence. CONSTITUTION:In an exposure sequence A, a wafer alignment mark 103 for direct drawing of a charge is blinded as shown by a shaded area. The blinding position is blinded by specifying the positions of a-a'-d-d' with the distances from the center of a reticle. Thus the outer parts from the center are blinded. Only a device pattern region 102 is exposed on a wafer 201 in the predetermined sequence by using the reticle 101, which is blinded in this way. In an exposure sequence B, the device pattern region 102 is blinded, and only the four water alignment marks 103 for direct drawing of the charged beam are exposed on the wafer 201 in the predetermined sequence. Thus the exposure can be performed at the desired positions of the wafer 201.
JP62164005A 1987-07-02 1987-07-02 Exposure method Pending JPS649617A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62164005A JPS649617A (en) 1987-07-02 1987-07-02 Exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62164005A JPS649617A (en) 1987-07-02 1987-07-02 Exposure method

Publications (1)

Publication Number Publication Date
JPS649617A true JPS649617A (en) 1989-01-12

Family

ID=15784952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62164005A Pending JPS649617A (en) 1987-07-02 1987-07-02 Exposure method

Country Status (1)

Country Link
JP (1) JPS649617A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03155612A (en) * 1989-11-14 1991-07-03 Matsushita Electric Ind Co Ltd Forming method for alignment mark
JPH04297016A (en) * 1991-03-26 1992-10-21 Soltec:Kk Preparing method of x-ray mask

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03155612A (en) * 1989-11-14 1991-07-03 Matsushita Electric Ind Co Ltd Forming method for alignment mark
JPH04297016A (en) * 1991-03-26 1992-10-21 Soltec:Kk Preparing method of x-ray mask

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