JPS648675A - Formation of schottky gate - Google Patents

Formation of schottky gate

Info

Publication number
JPS648675A
JPS648675A JP16430887A JP16430887A JPS648675A JP S648675 A JPS648675 A JP S648675A JP 16430887 A JP16430887 A JP 16430887A JP 16430887 A JP16430887 A JP 16430887A JP S648675 A JPS648675 A JP S648675A
Authority
JP
Japan
Prior art keywords
gate
layer
metal
diameter
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16430887A
Other languages
Japanese (ja)
Inventor
Masaru Osawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16430887A priority Critical patent/JPS648675A/en
Publication of JPS648675A publication Critical patent/JPS648675A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To compose a gate structure in a trapezoidal shape, to prevent a gate metal of a second layer and succeeding layers from getting into contact with a substrate, and to form a Schottky gate having high reliability by sequentially reducing the diameter of an evaporation source of the gate metal according to the sequence of depositing the metal. CONSTITUTION:After a gate forming photoresist pattern 3 is formed by a photocomposing technique on an S.I.GaAs substrate 1 having an active layer 2, the thickness of the layer 2 is regulated by etching the exposed GaAs section to form an etching face 4. Then, when a first layer gate metal 5 is deposited, a depositing flow 9 is formed by a deposition source 11 having a maximum diameter. Thereafter, a second layer gate metal 6 is deposited by a deposition source 12 in which the irradiation region of an electron beam is narrowed as compared with the metal 5. Subsequently, the electron beam diameter is sequentially narrowed to narrow the width of the deposition flow, and a gate of trapezoidal shape which is sequentially increased in its diameter from the substrate 1 is formed.
JP16430887A 1987-06-30 1987-06-30 Formation of schottky gate Pending JPS648675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16430887A JPS648675A (en) 1987-06-30 1987-06-30 Formation of schottky gate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16430887A JPS648675A (en) 1987-06-30 1987-06-30 Formation of schottky gate

Publications (1)

Publication Number Publication Date
JPS648675A true JPS648675A (en) 1989-01-12

Family

ID=15790662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16430887A Pending JPS648675A (en) 1987-06-30 1987-06-30 Formation of schottky gate

Country Status (1)

Country Link
JP (1) JPS648675A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9629831B2 (en) 2000-02-29 2017-04-25 Millennium Pharmaceuticals, Inc. Benzamides and related inhibitors of factor XA

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9629831B2 (en) 2000-02-29 2017-04-25 Millennium Pharmaceuticals, Inc. Benzamides and related inhibitors of factor XA

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