JPS5669843A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5669843A JPS5669843A JP14523579A JP14523579A JPS5669843A JP S5669843 A JPS5669843 A JP S5669843A JP 14523579 A JP14523579 A JP 14523579A JP 14523579 A JP14523579 A JP 14523579A JP S5669843 A JPS5669843 A JP S5669843A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- window
- deposited
- electrode wiring
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To flatten the surface of the electrode wiring layer, by forming an insulation layer having an electrode contacting window on a semiconductor substrate, depositing a metal layer on all the surface, performing ion etching with the substrate being rotated, and remaining the metal layer only in the window. CONSTITUTION:The first insulating film 2 is deposited on the semiconductor substrate 1, the electrode contacting window is provided, and the first metal electrode wiring layer 3 is deposited on all the surface including said window. Then, the ion beam is irradiated from the oblique direction with the substrate 1 being rotated, and the layer 3 is etched. The layer 3 is remained only in the part of the contact window, and the other part of the layer 3 is removed. Then, the second insulating film 4 is deposited on all the surface, a resist mask 5 having an opening hole is provided on the region corresponding to the layer 3, and an electrode contacting window 4A is provided by etching. Thereafter the second metal electrode wiring layer 6 is deposited on all the surface, the same etching is performed, the layer 6 is remained only on the layer 3, the third electrode wiring 7 is formed, so that it is contacted with the layer 6, extended over the film 4, and contacted with the layer 3 via the layer 6.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14523579A JPS5669843A (en) | 1979-11-09 | 1979-11-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14523579A JPS5669843A (en) | 1979-11-09 | 1979-11-09 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5669843A true JPS5669843A (en) | 1981-06-11 |
Family
ID=15380453
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14523579A Pending JPS5669843A (en) | 1979-11-09 | 1979-11-09 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5669843A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5717148A (en) * | 1980-07-04 | 1982-01-28 | Sony Corp | Manufacture of semiconductor device |
JPS5882536A (en) * | 1981-11-10 | 1983-05-18 | Fujitsu Ltd | Preparation of semiconductor device |
US4592802A (en) * | 1984-04-13 | 1986-06-03 | Societe Pour L'etude et la Fabrication des Circuits Integres Speciaux E.F.C.I.S. | Method of fabrication of aluminum contacts through a thick insulating layer in an integrated circuit |
JPH01225122A (en) * | 1988-03-04 | 1989-09-08 | Toshiba Corp | Manufacture of semiconductor device |
JPH0774146A (en) * | 1990-02-09 | 1995-03-17 | Applied Materials Inc | Improved flattening method of integrated circuit structure using low-melting point inorganic material |
US6350676B1 (en) | 1991-11-22 | 2002-02-26 | Sgs-Thomson Microelectronics, S.R.L. | Method of forming high-stability metallic contacts in an integrated circuit with one or more metallized layers |
-
1979
- 1979-11-09 JP JP14523579A patent/JPS5669843A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5717148A (en) * | 1980-07-04 | 1982-01-28 | Sony Corp | Manufacture of semiconductor device |
JPS5882536A (en) * | 1981-11-10 | 1983-05-18 | Fujitsu Ltd | Preparation of semiconductor device |
JPH0118582B2 (en) * | 1981-11-10 | 1989-04-06 | Fujitsu Ltd | |
US4592802A (en) * | 1984-04-13 | 1986-06-03 | Societe Pour L'etude et la Fabrication des Circuits Integres Speciaux E.F.C.I.S. | Method of fabrication of aluminum contacts through a thick insulating layer in an integrated circuit |
JPH01225122A (en) * | 1988-03-04 | 1989-09-08 | Toshiba Corp | Manufacture of semiconductor device |
JPH0774146A (en) * | 1990-02-09 | 1995-03-17 | Applied Materials Inc | Improved flattening method of integrated circuit structure using low-melting point inorganic material |
US6350676B1 (en) | 1991-11-22 | 2002-02-26 | Sgs-Thomson Microelectronics, S.R.L. | Method of forming high-stability metallic contacts in an integrated circuit with one or more metallized layers |
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